STP16N60M2, STU16N60M2
Nchannel 600 V, 0.28 Ω typ., 12 A MDmesh™ M2
Power MOSFET in TO-220 and IPAK packages
Datasheet - production data
TAB
IPAK
1
2
3
G(1)
TAB
TO-220 1
2
3
Figure 1: Internal schematic diagram
D(2, TAB)
Features
Order code V
DS
R
DS(on)
max. I
D
STP16N60M2
600 V
0.32 Ω
12 A
STU16N60M2
•
Extremely low gate charge
•
Excellent output capacitance (C
OSS
) profile
•
100% avalanche tested
•
Zener-protected
Applications
•
Switching applications
Description
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
Order code
STP16N60M2
STU16N60M2
S(3) AM15572v1_tab
Table 1: Device summary
Marking Package
16N60M2
TO-220
IPAK
March 2015 DocID027198 Rev 1
This is information on a product in full production.
Packaging
Tube
1/16 www.st.com
Contents
Contents
STP16N60M2, STU16N60M2
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 9
4 Package mechanical data ............................................................. 10
4.1
4.2
TO-220 type A package information ................................................ 11
IPAK (TO-251) Type A package information ................................... 13
5 Revision history ............................................................................ 15
2/16 DocID027198 Rev 1
STP16N60M2, STU16N60M2
1 Electrical ratings
Symbol
V
GS
I
D
I
D
I
DM
(1)
P
TOT
dv/dt
(2) dv/dt
(3)
.
T stg
T j
Symbol
R thj-case
R thj-amb
Symbol
I
AR
E
AS
Table 2: Absolute maximum ratings
Parameter
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature
Max. operating junction temperature
Notes:
(1)
Pulse width limited by safe operating area.
(2)
I
SD
≤ 12 A, di/dt ≤ 400 A/µs; V
DS peak
< V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
.
(3)
V
DS
≤ 480 V
Table 3: Thermal data
Parameter
Thermal resistance junction-case max.
Thermal resistance junction-ambient max.
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetetive or not repetetive
(pulse width limited by T jmax
)
Single pulse avalanche energy (starting
T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Electrical ratings
Value
± 25
12
7.6
48
110
15
50
- 55 to 150
150
Value
TO-220 IPAK
62.5
1.14
100
Value
2.9
130
Unit
V
A
A
A
W
V/ns
V/ns
°C
°C
Unit
°C/W
°C/W
Unit
A mJ
DocID027198 Rev 1 3/16
Electrical characteristics
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified).
Symbol Parameter
Table 5: Static
Test conditions
V
(BR)DSS
I
DSS
I
GSS
Drain-source breakdown voltage
V
GS
= 0 V, I
D
= 1 mA
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 600 V
V
GS
= 0 V, V
DS
= 600 V,
T
C
= 125 °C
Gate-body leakage current V
DS
= 0 V, V
GS
= ±25 V
V
DS
= V
GS
, I
D
= 250 µA V
GS(th)
Gate threshold voltage
R
DS(on)
Static drain-source onresistance
V
GS
= 10 V, I
D
= 6 A
Symbol Parameter
Table 6: Dynamic
Test conditions
C
C
C
R oss
Q iss rss
G g
Q gs
Q gd
C
oss eq.
(1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
STP16N60M2, STU16N60M2
V
DS
= 0 V to 480 V, V
GS
= 0 V - f = 1 MHz open drain
V
DD
= 480 V, I
D
= 12 A,
V
GS
= 10 V (see Figure 17:
"Gate charge test circuit" )
Min. Typ. Max. Unit
600
2 3
1.2
140
5.3
19
3.3
9.5
1
V
µA
100 µA
±10 µA
4 V
0.28 0.32
Ω
Min. Typ. Max. Unit
-
-
700
38
-
- pF pF
-
-
-
-
-
-
-
-
-
-
- pF pF
Ω nC nC nC
Notes:
(1)
C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss
when V
DS increases from 0 to 80% V
DSS
.
Symbol Parameter
Table 7: Switching times
Test conditions Min. Typ. Max. Unit t d(on) t r t d(off) t f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
V
DD
= 300 V, I
R
G
= 4.7
Ω, V
D
= 6 A
GS
= 10 V (see
Figure 16: "Switching times test circuit for resistive load" and Figure 21: "Switching time waveform" )
- 10.5
-
-
9.5
58
- 18.5
-
-
-
- ns ns ns ns
4/16 DocID027198 Rev 1
STP16N60M2, STU16N60M2
Symbol Parameter
I
SD
Source-drain current
I
SDM
(1)
Source-drain current
(pulsed)
V
SD
(2)
Forward on voltage t rr
Q rr
Reverse recovery time
Reverse recovery charge
I
I
RRM t
Q rr rr
RRM
Reverse recovery current
Reverse recovery time
Table 8: Source-drain diode
Test conditions
Reverse recovery charge
Reverse recovery current
V
GS
= 0 V, I
SD
= 12 A
I
SD
= 12 A, di/dt = 100 A/µs,
V
DD
= 60 V (see Figure 18:
"Test circuit for inductive load switching and diode recovery times" )
I
SD
= 12 A, di/dt = 100 A/µs,
V
DD
= 60 V, T j
= 150 °C (see
Figure 18: "Test circuit for inductive load switching and diode recovery times" )
Electrical characteristics
Min. Typ. Max. Unit
-
-
-
- 316
- 3.25
12
48
1.6
A
A
V ns
µC
- 20.5
-
-
-
454
4.8
21
A ns
µC
A
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID027198 Rev 1 5/16
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: TO-220 safe operating area
STP16N60M2, STU16N60M2
Figure 3: TO-220 thermal impedance
CG20930
K
δ = 0.5
δ = 0.2
10 -1
δ = 0.1
10 -2
10 -5
δ = 0.05
δ = 0.02
δ = 0.01
SINGLE PULSE
10 -4 10 -3 10 -2
Z = k R
δ = t p p
/
/
Ƭ t t
Ƭ Ƭ
10 -1 t p
(s)
Figure 4: IPAK safe operating area
Figure 5: IPAK thermal impedance
GC20460
K
Figure 6: Output characteristics
10 0
δ = 0.5
10 -1
δ = 0.2
δ = 0.1
δ = 0.05
δ = 0.02
δ = 0.01
SINGLE PULSE
10 -2
10 -5 10 -4 10 -3 10 2
Z th
= KR
δ = t p thj-c
/ Ƭ t p Ƭ
10 1 T p
(s)
Figure 7: Transfer characteristics
6/16 DocID027198 Rev 1
STP16N60M2, STU16N60M2
Figure 8: Normalized gate threshold voltage vs. temperature
Electrical characteristics
Figure 9: Normalized V(BR)DSS vs. temperature
Figure 10: Static drain-source on-resistance
Figure 11: Normalized on-resistance vs. temperature
Figure 12: Gate charge vs. gate-source voltage
Figure 13: Capacitance variations
DocID027198 Rev 1 7/16
Electrical characteristics
Figure 14: Output capacitance stored energy
STP16N60M2, STU16N60M2
Figure 15: Source- drain diode forward characteristics
8/16 DocID027198 Rev 1
STP16N60M2, STU16N60M2
3 Test circuits
Figure 16: Switching times test circuit for resistive load
Test circuits
Figure 17: Gate charge test circuit
12 V
47 k
Ω
100 nF
1 k
Ω
V
DD
I
G
= CONST
V i
≤ V
GS
100 Ω
D.U.T.
2.7 k
Ω V
G
2200 μ F
47 k
Ω
1 k
Ω
P
W
AM01469v 1
Figure 18: Test circuit for inductive load switching and diode recovery times Figure 19: Unclamped inductive load test circuit
25
Ω
G
A
D
D.U.T.
S
B
R
G
A
FAST
DIODE
A
B
B
L=100 µH
G
D
D.U.T.
S
3.3
µF
1000
µF
V
DD
AM01470v1
Figure 20: Unclamped inductive waveform
V
(BR)DSS
V
D
V
DD
I
D
I
DM
V
DD
AM01472v 1
0
Figure 21: Switching time waveform t d(on) t on t r t d(off) t off t f
90% 90%
10%
10% V
DS
V
GS
90%
0
10% AM01473v 1
DocID027198 Rev 1 9/16
Package mechanical data
4 Package mechanical data
STP16N60M2, STU16N60M2
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
10/16 DocID027198 Rev 1
STP16N60M2, STU16N60M2
4.1 TO-220 type A package information
Package mechanical data
Figure 22: TO-220 type A package outline
DocID027198 Rev 1 11/16
Package mechanical data
Dim. e e1
F
H1
J1
L
L1
L20
L30
øP
Q
A b b1 c
D
D1
E 10
2.40
4.95
1.23
6.20
2.40
13
3.50
STP16N60M2, STU16N60M2
Table 9: TO-220 type A mechanical data mm
Typ. Min.
4.40
0.61
1.14
0.48
15.25
Max.
4.60
0.88
1.70
0.70
15.75
1.27
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
16.40
28.90
3.75
2.65
3.85
2.95
12/16 DocID027198 Rev 1
STP16N60M2, STU16N60M2
4.2
Package mechanical data
IPAK (TO-251) Type A package information
Figure 23: IPAK (TO-251) type A drawing
DocID027198 Rev 1 13/16
Package mechanical data
Dim.
L1
L2
V1 e1
H
L c2
D
E e
A
A1 b b2 b4
B5 c
STP16N60M2, STU16N60M2
Table 10: IPAK (TO-251) type A mechanical data mm
Typ. Min.
2.20
0.90
0.64
5.20
Max.
2.40
1.10
0.90
0.95
5.40
0.30
0.45
0.48
6.00
6.40
0.60
0.60
6.20
6.60
2.28
4.40
4.60
16.10
9.00
0.80
0.80
10°
9.40
1.20
1.00
14/16 DocID027198 Rev 1
STP16N60M2, STU16N60M2
5
Revision history
Revision history
Date
11-Mar-2015
Table 11: Document revision history
Revision
1
Changes
Initial release.
DocID027198 Rev 1 15/16
STP16N60M2, STU16N60M2
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