STF13NM60N, STI13NM60N
STP13NM60N, STU13NM60N
Datasheet
N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFETs in a TO-220FP, I²PAK, TO-220 and IPAK packages
G(1)
S(3)
TAB
TAB
TO-220FP
1
2
3
I 2 PAK
1
2
3
TO-220
1
2
3
TAB
IPAK
1
2
3
D(2, TAB)
Features
Order codes V
DS
STF13NM60N
STI13NM60N
STP13NM60N
600 V
STU13NM60N
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
R
DS(on)
max.
360 mΩ
Applications
• Switching applications
I
D
11 A
NG1D2TS3
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest onresistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
Product status link
STF13NM60N
STI13NM60N
STP13NM60N
STU13NM60N
DS6112 - Rev 6 - October 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
1
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
V
DS
V
I
GS
D
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current pulsed I
DM
(2)
P
TOT
dv/dt (3)
Total power dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
V
ISO
Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, T
C
= 25 °C)
Operating junction temperature range T
J
T stg
Storage temperature range
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. I
SD
≤ 11 A, di/dt ≤ 400 A/μs, V
DD
= 80% V
(BR)DSS
.
TO-220FP
11
(1)
6.9
(1)
44 (1)
25
2.5
-55 to 150
Value
I²PAK, TO-220, IPAK
600
±25
11
6.9
44
90
15
Symbol
R thj-case
R thj-a
Parameter
Table 2. Thermal data
Thermal resistance junction-case
Thermal resistance junction-ambient
TO-220FP
5
Value
I²PAK, TO-220
1.39
62.5
IPAK
100
Unit
°C/W
°C/W
Unit
V
V
A kV
°C
°C
A
W
V/ns
Symbol
I
AS
E
AS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive
(pulse width limited by T
J
max)
Single-pulse avalanche energy
(starting T
J
= 25 °C, I
D
= I
AS
, V
DD
= 50 V)
Value
3.5
200
Unit
A mJ
DS6112 - Rev 6 page 2/20
2
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
Electrical characteristics
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4. Static
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Parameter Test conditions
Drain-source breakdown voltage V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, V
DS
= 600 V
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 600 V, T
C
= 125 °C (1)
Gate-body leakage current
Gate threshold voltage
V
DS
= 0 V, V
GS
= ±25 V
V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on-resistance V
GS
= 10 V, I
D
= 5.5 A
1. Defined by design, not subject to production test.
Min.
Typ.
Max.
Unit
600 V
1
µA
100
2
±100 nA
3 4
280 360
V mΩ
Table 5. Dynamic
Symbol
C iss
C oss
C rss
C oss eq.
(1)
Q g
Q gs
Q gd
R g
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
V
V
V
DS
DS
DD
= 50 V, f = 1 MHz, V
= 0 to 480 V, V
= 480 V, I
(see
Test conditions
D
Figure 17. Test circuit for gate charge behavior
= 11 A, V
)
GS f = 1 MHz, open drain
GS
= 0 V
GS
= 0 V
= 0 to 10 V
Min.
-
-
-
-
-
-
-
-
Typ.
790
60
3.6
135
27
4
14
4.7
Max.
-
-
-
-
-
-
-
-
Unit pF pF pF pF nC nC nC
Ω
1. C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss
when V
DS
increases from 0 to 80% V
DSS
.
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
= 300 V, I
D
= 5.5 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see
Figure 16. Test circuit for resistive load switching times
and
Figure 21. Switching time waveform )
Min.
Typ.
Max.
Unit
-
3
8
-
ns ns
-
30
10 -
ns ns
DS6112 - Rev 6 page 3/20
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
Electrical characteristics
Table 7. Source-drain diode
Symbol
I
SD
I
SDM
(1)
V
I
I
SD
(2)
t
Q
RRM t
Q rr rr rr rr
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
V
GS
= 0 V, I
SD
= 11 A
I
SD
= 11 A, di/dt = 100 A/µs,
V
DD
= 100 V
(see
Figure 18. Test circuit for inductive load switching and diode recovery times )
I
SD
= 11 A, di/dt = 100 A/µs,
V
DD
= 100 V, T
J
= 150 °C
(see
Figure 18. Test circuit for inductive load switching and diode recovery times )
1. Pulse width is limited by safe operating area.
2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
-
-
-
-
-
-
-
Min.
Typ.
Max.
Unit
11 A
44 A
1.5
230
2
V ns
µC
18
290
2.5
17
A ns
µC
A
DS6112 - Rev 6 page 4/20
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area for I²PAK and TO-220
AM03258v1
Figure 2. Thermal impedance for I²PAK and TO-220
Figure 3. Safe operating area for TO-220FP
AM03259v1
I D
(A)
10
1
Oper
Limited s are a is
DS
(on) ax R
0.1
Tj=150°C
Tc=25°C
Single pulse
10µs
100µs
1ms
10ms
0.01
0.1 1 10 100 V
DS
(V)
Figure 5. Safe operating area for IPAK
AM03260v1
I D
(A)
10
1
0.1
0.1
1
is
DS(on)
10µs
100µs
Tj=150°C
Tc=25°C
Single pulse
10
1ms
10ms
100 V DS (V)
DS6112 - Rev 6
Figure 4. Thermal impedance for TO-220FP
K GC20940
10 -1
10 -2
10 -3
10 -4 10 -3 10 -2 10 -1 10 0 t p
(s)
Figure 6. Thermal impedance for IPAK
K
GC20460
10 0
10 -1
10 -2
10 -5 10 -4 10 -3 10 -2 10 -1 t p
(s) page 5/20
12
8
4
0
0
Figure 7. Output characteristics
AM03300v1 I D
(A)
V
GS
=10V
6V
20
16
5 10 15 20
5V
25
4V
V
DS
(V)
Figure 9. Normalized V
DS
vs temperature
V
DS
(norm)
I
D
= 1 mA
AM03258v1
1.08
1.04
1.00
0.96
0.92
-50 0 50 100 T
J
(°C)
Figure 11. Gate charge vs gate-source voltage
V
GS
(V)
12
10
8
6
4
2
0
0
V
DS
10
V
DD
=480V
I D =11A
20
AM03305v1
V
DS (V)
500
400
300
30
200
100
0
Q g
(nC)
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
Electrical characteristics (curves)
16
12
8
4
0
0
I
D
(A)
Figure 8. Transfer characteristics
AM03301v1
V
DS
=20V
20
2 4 6 8 10 V
GS
(V)
Figure 10. Static drain-source on-resistance
AM03302v1 R
DS(on)
Ω
30
V
GS
=10V
8
8 10
D
C
(pF)
Figure 12. Capacitance variations
AM03304v1
1000
Ciss
100
Coss
10
1
0.1
1 10 100
Crss
V
DS
(V)
DS6112 - Rev 6 page 6/20
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
Electrical characteristics (curves)
Figure 13. Normalized gate threshold voltage vs temperature
V
GS(th)
AM03306v1
1.1
I D =250µA
1.0
0.9
0.70
-50 0
Figure 14. Normalized on resistance vs temperature
R
DS(on)
(norm)
2.1
I
AM03307v1
1.5
1.1
0.7
0.5
-50 -25 0 25 50 75 100 T
J
(°C)
T
J
Figure 15. Source-drain diode forward characteristics
V SD
(V)
AM09290v1
T
J
=-50°C
1.2
T
J
=25°C
1.0
0.8
T
J
=150°C
0.6
0.4
0 2 4 6 8 10 I
SD
(A)
DS6112 - Rev 6 page 7/20
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
Test circuits
3
Test circuits
Figure 16. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF
D.U.T.
V
DD
AM01468v1
Figure 18. Test circuit for inductive load switching and diode recovery times
Figure 17. Test circuit for gate charge behavior
12 V
V
GS pulse width
2200
μF
+
I
G
= CONST
2.7 kΩ
47 kΩ
1 kΩ
47 kΩ
100 nF
100 Ω
V
DD
1 kΩ
D.U.T.
V
G
AM01469v1
Figure 19. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
+
_
R
G
A A fast diode
B
B
G
100 µH
D
D.U.T.
S
3.3
µF +
1000
µF
V
DD
AM01470v1
Figure 20. Unclamped inductive waveform
V
(BR)DSS
V
D
I
DM
I
D
V
DD
V
DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF
V
DD
D.U.T.
AM01471v1
0
Figure 21. Switching time waveform t d(on) t on t r t d(off) t off t f
90% 90%
10%
V
GS
V
DS
90%
10%
0 10%
AM01473v1
DS6112 - Rev 6 page 8/20
4
4.1
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
TO-220FP package information
Figure 22. TO-220FP package outline
DS6112 - Rev 6
7012510_Rev_13_B page 9/20
DS6112 - Rev 6
Dim.
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
D
E
A
B
F
F1
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
TO-220FP package information
Table 8. TO-220FP package mechanical data mm
Typ.
Min.
4.40
2.50
2.50
0.45
0.75
1.15
1.15
4.95
2.40
10.00
16.00
28.60
9.80
2.90
15.90
9.00
3.00
Max.
4.60
2.70
2.75
0.70
1.00
1.70
1.70
5.20
2.70
10.40
30.60
10.60
3.60
16.40
9.30
3.20
page 10/20
4.2
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
I²PAK package information
I²PAK package information
Figure 23. I²PAK package outline
DS6112 - Rev 6
0004982_Rev_9 page 11/20
Dim.
e1
E
L
D e
L1
L2
A
A1 b b1 c c2
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
I²PAK package information
1.14
0.49
1.23
8.95
2.40
Min.
4.40
2.40
0.61
4.95
10.00
13.00
3.50
1.27
Table 9. I²PAK package mechanical data
-
-
-
mm
Typ.
-
-
-
-
-
-
-
-
-
1.70
0.70
1.32
9.35
2.70
Max.
4.60
2.72
0.88
5.15
10.40
14.00
3.93
1.40
DS6112 - Rev 6 page 12/20
4.3
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
TO-220 type A package information
TO-220 type A package information
Figure 24. TO-220 type A package outline
DS6112 - Rev 6
0015988_typeA_Rev_23 page 13/20
DS6112 - Rev 6
Dim.
e1
F
H1
E e
J1
L b1 c
A b
D
D1
L1
L20
L30
øP
Q
Slug flatness
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
TO-220 type A package information
Table 10. TO-220 type A package mechanical data mm
Typ.
Min.
4.40
0.61
1.14
0.48
15.25
1.27
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
16.40
28.90
3.75
2.65
0.03
3.85
2.95
0.10
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
Max.
4.60
0.88
1.55
0.70
15.75
page 14/20
4.4
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
IPAK (TO-251) type A package information
IPAK (TO-251) type A package information
Figure 25. IPAK (TO-251) type A package outline
DS6112 - Rev 6
0068771_IK_typeA_rev15 page 15/20
DS6112 - Rev 6
Dim.
D
E e c c2 e1
H
L
L1
L2
V1
A
A1 b b2 b4
B5
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
IPAK (TO-251) type A package information
Table 11. IPAK (TO-251) type A package mechanical data mm
Typ.
Min.
2.20
0.90
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.00
0.80
0.30
2.28
16.10
0.80
10°
0.60
0.60
6.20
6.60
4.60
Max.
2.40
1.10
0.90
0.95
5.40
9.40
1.20
1.00
page 16/20
5
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
Ordering information
Ordering information
Order codes
STF13NM60N
STI13NM60N
STP13NM60N
STU13NM60N
Table 12. Order codes
Marking
13NM60N
Package
TO-220FP
I²PAK
TO-220
IPAK
Packing
Tube
DS6112 - Rev 6 page 17/20
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
Revision history
Date
29-Feb-2009
13-Jan-2010
08-Nov-2010
18-Jan-2012
14-Nov-2012
26-Oct-2020
Revision
1
2
3
4
5
6
Table 13. Document revision history
Changes
First release
– Added new package, mechanical data: TO-247
– Added new package, mechanical data: D²PAK
– Modified Figure 4
– Added new package, mechanical data: I²PAK
– Added new package, mechanical data: IPAK
– Minor text changes
The part numbers STB13NM60N and STD13NM60N have been moved to a separate datasheet.
Section 4: Package mechanical data has been updated.
The part number STW13NM60N have been moved to a separate datasheet and the document has been updated accordingly.
Updated cover page.
Updated Section 1 Electrical ratings
.
Updated Table 4. Static and
Table 7. Source-drain diode
.
Updated Section 4 Package information .
Added
Section 5 Ordering information
.
Minor text changes.
DS6112 - Rev 6 page 18/20
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
4.1
TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.2
I²PAK package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.3
TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.4
IPAK (TO-251) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
DS6112 - Rev 6 page 19/20
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2020 STMicroelectronics – All rights reserved
DS6112 - Rev 6 page 20/20
