SCT30N120
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ
(typ., T
J
= 150 °C) in an HiP247™ package
Datasheet - production data
Features
Very tight variation of on-resistance vs. temperature
Very high operating junction temperature capability (T
J
= 200 °C)
Very fast and robust intrinsic body diode
Low capacitance
Applications
Solar inverters, UPS
Motor drives
High voltage DC-DC converters
Switch mode power supply
Figure 1: Internal schematic diagram
G(1)
Order code
D(2, TAB)
SCT30N120
S(3)
Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary
HiP247™ package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for highefficiency and high power density applications.
AM01475v1_noZen
Table 1: Device summary
Marking
SCT30N120
Package
HiP247™
Packaging
Tube
May 2017 DocID023109 Rev 11
This is information on a product in full production.
1/13 www.st.com
Contents
Contents
SCT30N120
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Package information ..................................................................... 10
3.1
HiP247 package information ........................................................... 10
4 Revision history ............................................................................ 12
2/13 DocID023109 Rev 11
SCT30N120
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
I
D
I
D
I
DM
(1)
P
TOT
T stg
T j
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
(limited by die)
Drain current (continuous) at T
C
= 25 °C
(limited by package)
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Storage temperature range
Operating junction temperature range
Notes:
(1)
Pulse width limited by safe operating area.
Symbol
Table 3: Thermal data
Parameter
R thj-case
R thj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
Electrical ratings
Value
1200
-10 to 25
45
40
34
90
270
-55 to 200
Unit
V
V
A
A
A
A
W
°C
°C
Value
0.65
40
Unit
°C/W
°C/W
DocID023109 Rev 11 3/13
Electrical characteristics
2 Electrical characteristics
SCT30N120
(T
CASE
= 25 °C unless otherwise specified).
Symbol Parameter
Table 4: On/off states
Test conditions
I
DSS
I
GSS
Gate-body leakage current
V
GS(th)
Gate threshold voltage
R
DS(on)
Zero gate voltage drain current
Static drain-source on- resistance
V
DS
= 1200 V; V
GS
= 0 V
V
DS
= 1200 V, V
GS
= 0 V,
T
J
= 200 °C
V
DS
= 0 V;
V
GS
= -10 to 22 V
V
DS
= V
GS
, I
D
= 1 mA
V
GS
= 20 V, I
D
= 20 A
V
GS
= 20 V, I
D
= 20 A,
T
J
= 150 °C
V
GS
= 20 V, I
D
= 20 A,
T
J
= 200 °C
Symbol
C iss
C oss
C rss
Q g
Q gs
Q gd
R g
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Table 5: Dynamic
Test conditions
V
V
V
V
DS
GS
DD
GS
= 400 V, f = 1 MHz,
= 0 V
= 800 V, I
D
= 20 A,
= 0 to 20 V f=1 MHz open drain
Min. Typ. Max. Unit
1 25 µA
50 µA
±100 nA
1.8 3.5 V
80 100 mΩ mΩ
90
100 mΩ
Min. Typ. Max. Unit
-
-
-
-
-
-
-
1700
130
25
105
16
40
5
-
-
-
-
-
-
- pF pF pF nC nC nC
Ω
Symbol
Table 6: Switching energy (inductive load)
Parameter Test conditions Min. Typ. Max. Unit
E on
E off
E on
E off
Symbol t d(on) t f t d(off) t r
Turn-on switching energy
Turn-off switching energy
Turn-on switching energy
Turn-off switching energy
Parameter
Turn-on delay time
Fall time
Turn-off delay time
Rise time
V
DD
= 800 V, I
D
= 20 A,
R
G
= 6.8 Ω, V
GS
= -2 to 20 V
V
DD
= 800 V, I
D
= 20 A,
R
G
= 6.8 Ω, V
GS
= -2 to 20 V
T
J
= 150 °C
Table 7: Switching times
Test conditions
V
DD
= 800 V, I
D
= 20 A,
R
G
= 0 Ω, V
GS
= 0 to 20 V
-
-
-
-
500
350
500
400
-
-
-
-
µJ
µJ
µJ
µJ
Min. Typ. Max. Unit
-
-
-
-
19
28
45
20
-
-
-
- ns ns ns ns
4/13 DocID023109 Rev 11
SCT30N120 Electrical characteristics
Symbol
V
SD t rr
Q rr
I
RRM
Table 8: Reverse SiC diode characteristics
Parameter Test conditions Min Typ. Max Unit
I
F
= 10 A, V
GS
= 0 V - Diode forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
V
= 20 A, di/dt = 100 A/µs
DD
= 800 V
-
-
-
-
3.5
140
140
2
-
-
V ns nC
A
DocID023109 Rev 11 5/13
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
SCT30N120
Figure 3: Thermal impedance
Figure 6: Output characteristics (T
J
= 200 °C) Figure 7: Transfer characteristics
6/13
Figure 4: Output characteristics (T
J
= 25 °C) Figure 5: Output characteristics (T
J
= 150 °C)
DocID023109 Rev 11
SCT30N120
Figure 8: Power dissipation
Electrical characteristics
Figure 9: Gate charge vs gate-source voltage
Figure 10: Capacitance variations Figure 11: Switching energy vs. drain current
Figure 12: Switching energy vs. junction temperature
Figure 13: Normalized V
(BR)DSS
vs. temperature
7/13 DocID023109 Rev 11
Electrical characteristics
Figure 14: Normalized gate threshold voltage vs. temperature
SCT30N120
Figure 15: Normalized on-resistance vs. temperature
Figure 16: Body diode characteristics (T
J
= -50 °C) Figure 17: Body diode characteristics (T
J
= 25 °C)
Figure 18: Body diode characteristics (T
J
= 150 °C) Figure 19: 3rd quadrant characteristics (T
J
= -50 °C)
8/13 DocID023109 Rev 11
SCT30N120
Figure 20: 3rd quadrant characteristics (T
J
= 25 °C)
Electrical characteristics
Figure 21: 3rd quadrant characteristics (T
J
= 150 °C)
V
DS
(V) -6 -5 -4 -3 -2 -1 0 1
0
5V
-10
V
GS
=0V
10V
-20
20V
-30
180220151648
15V
-40
I
D
(A)
DocID023109 Rev 11 9/13
Package information
3
3.1
Package information
SCT30N120
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
HiP247 package information
Figure 22
: HiP247™ package outline
10/13 DocID023109 Rev 11
SCT30N120
Dim. e
L
L1
L2
ØP
ØR
S b2 c
D
E
A
A1 b b1
Table 9: HiP247™ package mechanical data mm
Min. Typ.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
3.55
4.50
5.30
5.45
18.50
5.50
Package information
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
3.65
5.50
5.70
DocID023109 Rev 11 11/13
Revision history
4
SCT30N120
Revision history
Date
Table 10: Document revision history
Revision Changes
10-May-2012
21-May-2013
24-Jun-2013
11-Jul-2013
18-Dec-2013
27-May-2014
25-Sep-2014
17-Feb-2015
20-Feb-2015
24-Jul-2016
11-May-2017
1
2
3
4
5
6
7
8
9
10
11
First release
Updated trr value in Table8.
Updated dynamic parameters in Table5, VGS(th) in Table4 and
Eon in Table6.
Document status promoted from target to preliminary data.
Added: Section2.1: Electrical characteristics (curves)
Updated Figure6: Output characteristics (TJ=200°C) and
Figure7: Transfer characteristics.
Updated parameters in Table2: Absolute maximum ratings and
Table4: On/off states.
Added Table7: Switching times.
Updated Section3: Package mechanical data.
Minor text changes.
Document status promoted from preliminary to production data.
Updated title in cover page.
Updated Section2.1: Electrical characteristics (curves)
.
Updated title and features in cover page.
Updated Figure 2: "Safe operating area" and Figure 3: "Thermal impedance" .
Minor text changes.
Updated Table 4: "On/off states"
and Section 2.1: "Electrical characteristics (curves)" .
Minor text changes.
12/13 DocID023109 Rev 11
SCT30N120
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DocID023109 Rev 11 13/13
