SCTWA30N120
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ
(typ., T
J
= 150 °C), in an HiP247™ long leads package
Datasheet - production data
Features
Very tight variation of on-resistance vs. temperature
Very high operating junction temperature capability (T
J
= 200 °C)
Very fast and robust intrinsic body diode
Low capacitance
Order code
SCTWA30N120
Applications
Solar inverters, UPS
Motor drives
High voltage DC-DC converters
Switch mode power supply
Figure 1: Internal schematic diagram
G(1)
D(2, TAB)
S(3)
Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability.
These features render the device perfectly suitable for high-efficiency and high power density applications.
AM01475v1_noZen
Table 1: Device summary
Marking
SCT30N120
Package
HiP247™ long leads
Packaging
Tube
June 2017 DocID028837 Rev 2
This is information on a product in full production.
1/13 www.st.com
Contents
Contents
SCTWA30N120
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Package information ..................................................................... 10
3.1
HiP247 long leads package information .......................................... 10
4 Revision history ............................................................................ 12
2/13 DocID028837 Rev 2
SCTWA30N120
1 Electrical ratings
Symbol
V
DS
V
GS
I
D
I
D
I
D
I
DM
(1)
P
TOT
T stg
T j
Table 2: Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
(limited by die)
Drain current (continuous) at T
C
= 25 °C
(limited by package)
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Storage temperature range
Operating junction temperature range
Notes:
(1)
Pulse width limited by safe operating area.
Symbol
Table 3: Thermal data
Parameter
R thj-case
R thj-amb
Thermal resistance junction-case
Thermal resistance junction-amb
Electrical ratings
Value
1200
-10 to 25
45
40
34
90
270
-55 to 200
A
A
A
W
°C
Unit
V
V
A
Value
0.65
40
Unit
°C/W
°C/W
DocID028837 Rev 2 3/13
Electrical characteristics
2 Electrical characteristics
SCTWA30N120
(T case
=25 °C unless otherwise specified)
Symbol Parameter
Table 4: On /off states
Test conditions
C iss
C oss
C rss
R
G
Q g
Q gs
Q gd
I
DSS
Symbol
Zero gate voltage drain current
Parameter
V
GS
= 0 V, V
DS
= 1200 V
V
GS
= 0 V, V
DS
= 1200 V,
T
J
=200 °C
I
GSS
Gate-body leakage current V
DS
=0 V, V
GS
= -10 to 22 V
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 1 mA
R
DS(on)
Static drain-source on- resistance
V
GS
= 20 V, I
D
= 20 A
V
GS
= 20 V, I
D
= 20 A
T
J
= 150 °C
V
GS
= 20 V, I
D
= 20 A
T
J
= 200 °C
Table 5: Dynamic
Test conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
GS
=0 V, V
DS
=400 V, f=1 MHz f = 1 MHz, I
D
=0 A
V
DD
= 800 V, I
D
= 20 A
V
GS
=0 to 20 V
Symbol
Min. Typ. Max. Unit
1 25 µA
50 µA
±100 nA
1.8 3.5 V
80 100 mΩ mΩ 90
100 mΩ
Min. Typ. Max. Unit
-
-
-
-
-
-
-
1700
130
25
5
105
16
40
-
-
-
-
-
-
- pF pF pF
Ω nC nC nC
Table 6: Switching energy (inductive load)
Parameter Test conditions Min. Typ. Max Unit
E on
E off
E on
E off
Symbol t d(on)V t f(V t d(off)V t r(V)
Turn-on switching energy V
DD
= 800 V, I
D
= 20 A,
Turn-off switching energy R
G
= 6.8 Ω, V
GS
= -2 to 20 V
Turn-on switching energy V
DD
= 800 V, I
D
= 20 A,
R
G
= 6.8 Ω, V
GS
= -2 to 20 V
Turn-off switching energy
T
J
= 150 °C
Parameter
Turn-on delay time
Fall time
Turn-off-delay time
Rise time
Table 7: Switching times
Test conditions
V
DD
= 800 V, I
D
= 20 A,
R
G
= 0 Ω, V
GS
= 0 to 20 V
-
-
-
-
500
350
500
400
-
-
-
-
µJ
µJ
µJ
µJ
Min. Typ. Max Unit
-
-
-
-
19
28
45
20
-
-
-
- ns ns ns ns
4/13 DocID028837 Rev 2
SCTWA30N120
Symbol
V
SD t rr
Q rr
I
RRM
Electrical characteristics
Table 8: Reverse SiC diode characteristics
Parameter Test conditions Min. Typ. Max Unit
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
F
= 10 A, V
GS
= 0 V
I
SD
= 20 A, di/dt = 100 A/µs
V
DD
= 800 V
-
-
-
-
3.5
140
140
2
-
-
V ns nC
A
DocID028837 Rev 2 5/13
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
SCTWA30N120
Figure 3: Thermal impedance
Figure 4: Output characteristics (T
J
= 25 °C) Figure 5: Output characteristics (T
J
= 150 °C)
Figure 6: Output characteristics (T
J
= 200 °C) Figure 7: Transfer characteristics
6/13 DocID028837 Rev 2
SCTWA30N120
Figure 8: Power dissipation
Electrical characteristics
Figure 9: Gate charge vs gate-source voltage
Figure 10: Capacitance variations Figure 11: Switching energy vs. drain current
Figure 12: Switching energy vs. junction temperature
Figure 13: Normalized V
(BR)DSS
vs. temperature
7/13 DocID028837 Rev 2
Electrical characteristics
Figure 14: Normalized gate threshold voltage vs. temperature
SCTWA30N120
Figure 15: Normalized on-resistance vs. temperature
Figure 16: Body diode characteristics (T
J
= -50 °C) Figure 17: Body diode characteristics (T
J
= 25 °C
Figure 18: Body diode characteristics (T
J
= 150 °C) Figure 19: 3rd quadrant characteristics (T
J
= -50 °C)
8/13 DocID028837 Rev 2
SCTWA30N120
Figure 20: 3rd quadrant characteristics (T
J
= 25 °C)
Electrical characteristics
Figure 21: 3rd quadrant characteristics (T
J
= 150 °C)
V
DS
(V) -6 -5 -4 -3 -2 -1 0 1
0
5V
-10
V
GS
=0V
10V
-20
20V
-30
180220151648
15V
-40
I
D
(A)
DocID028837 Rev 2 9/13
Package information
3
3.1
Package information
SCTWA30N120
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
HiP247 long leads package information
Figure 22
: HiP247™ long leads package outline
10/13 DocID028837 Rev 2
7395426_7.0
SCTWA30N120
Dim.
L
L1
L2
L3
L4
L5
M
V
V1
V3
DIA
F1
F2
G
H
A
D
E
F
Package information
Table 9: HiP247™ long leads package mechanical data mm
Min. Typ. Max.
4.90
1.85
0.55
1.07
1.90
2.87
10.90 BSC
5.15
2.10
0.67
1.32
2.38
3.38
15.77
20.82
4.16
5.49
20.05
3.68
6.04
2.25
3.55
10°
3°
20°
16.02
21.07
4.47
5.74
20.30
3.93
6.29
2.55
3.66
DocID028837 Rev 2 11/13
Revision history
4
SCTWA30N120
Revision history
Date Revision
Table 10: Document revision history
Changes
11-Jan-2016
19-Jun-2017
1
2
First release.
Updated title, features in cover page.
Minor text edit in Section 1: "Electrical ratings"
and Section 2:
"Electrical characteristics" .
Updated Figure 2: "Safe operating area" , Figure 3: "Thermal impedance" ,
Figure 13: "Normalized V(BR)DSS vs. temperature" ,
Figure 14: "Normalized gate threshold voltage vs. temperature" and
Figure 15: "Normalized on-resistance vs. temperature" .
Document status promoted from preliminary to production data.
12/13 DocID028837 Rev 2
SCTWA30N120
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DocID028837 Rev 2 13/13
