STH6N95K5-2
N-channel 950 V, 1 Ω typ., 6 A MDmesh™ K5
Power MOSFET in a H²PAK-2 package
Datasheet - production data
Features
Order code
VDS
RDS(on) max.
ID
PTOT
STH6N95K5-2
950 V
1.25 Ω
6A
110 W
Industry’s lowest RDS(on) x area
Industry’s best figure of merit (FoM)
Ultra low gate charge
100% avalanche tested
Zener-protected
Applications
Figure 1: Internal schematic diagram
D(TAB)
Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
G(1)
S(2, 3)
AM15557a.v3
Table 1: Device summary
Order code
Marking
Package
Packaging
STH6N95K5-2
6N95K5
H²PAK-2
Tape and reel
March 2015
DocID027383 Rev 3
This is information on a product in full production.
1/17
www.st.com
Contents
STH6N95K5-2
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ..................................................................................... 9
4
Package mechanical data ............................................................. 10
4.1
Package mechanical data ............................................................... 11
5
Packing information ...................................................................... 14
6
Revision history ............................................................................ 16
2/17
DocID027383 Rev 3
STH6N95K5-2
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
VGS
Gate-source voltage
Value
Unit
± 30
V
ID
Drain current at TC = 25 °C
6
A
ID
Drain current at TC = 100 °C
3.8
A
IDM(1)
Drain current (pulsed)
24
A
PTOT
Total dissipation at TC = 25 °C
110
W
IAR(2)
Max current during repetitive or single pulse avalanche
3
A
EAS(3)
Single pulse avalanche energy
90
mJ
Peak diode recovery voltage slope
4.5
V/ns
MOSFET dv/dt ruggedness
50
V/ns
- 55 to 150
°C
dv/dt
(4)
dv/dt(5)
Tj
Operating junction temperature
Tstg
Storage temperature
Notes:
(1)Pulse
width limited by safe operating area.
(2)Pulse
width limited by Tjmax.
(3)Starting
(4)I
SD
(5)V
Tj = 25 °C, ID = IAS, VDD = 50 V.
≤ 6 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS.
DS
≤ 760 V.
Table 3: Thermal data
Symbol
Rthj-case
Rthj-pcb
(1)
Parameter
Value
Thermal resistance junction-case max
1.14
Thermal resistance junction-pcb max
30
Unit
°C/W
Notes:
(1)When
mounted on 1 inch² FR-4 board, 2 oz Cu.
DocID027383 Rev 3
3/17
Electrical characteristics
2
STH6N95K5-2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4: On/off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown
voltage
Min.
VGS = 0 V, ID = 1 mA
Typ.
Max.
Unit
950
V
VGS = 0 V, VDS = 950 V
1
µA
VGS = 0 V, VDS = 950 V,
Tc = 125 °C
50
µA
Gate body leakage current
VDS = 0 V, VGS = ± 20 V
± 10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100 µA
4
5
V
RDS(on)
Static drain-source onresistance
VCS = 10 V, ID = 3 A
1
1.25
Ω
Min.
Typ.
Max.
Unit
-
450
-
-
30
-
IDSS
Zero gate voltage drain
current
IGSS
3
Table 5: Dynamic
Symbol
Parameter
Test conditions
Ciss
Input capacitance
Coss
Output capacitance
Coss
Output capacitance
-
1.6
-
Co(tr)(1)
Equivalent
capacitance, timerelated
-
45
-
Co(er)(2)
Equivalent
capacitance, energyrelated
RG
Intrinsic gate
resistance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
VGS = 0 V, VDS = 100 V, f = 1 MHz
pF
VGS = 0 V, VDS = 0 to 760 V
pF
-
f = 1 MHz, ID =0 A
-
VDD = 760 V, ID = 6 A, VGS = 10 V
(see Figure 16: "Gate charge test
circuit" )
19
-
7
Ω
-
-
13
-
-
3
-
-
7
-
nC
Notes:
(1)Time-related
is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
(2)Energy-related
is defined as a constant equivalent capacitance giving the same stored energy as C oss when
VDS increases from 0 to 80% VDSS.
Table 6: Switching times
Symbol
td(on)
tr
td(off)
tf
4/17
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off-delay time
VDD = 475 V, ID = 3 A,
RG = 4.7 Ω, VGS = 10 V
Fall time
DocID027383 Rev 3
Min.
Typ.
Max.
Unit
-
12
-
ns
-
12
-
ns
-
33
-
ns
-
21
-
ns
STH6N95K5-2
Electrical characteristics
Table 7: Source drain diode
Symbol
ISD
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Source-drain current
-
6
A
ISDM(1)
Source-drain current (pulsed)
-
24
A
VSD(2)
Forward on voltage
ISD = 6 A, VGS = 0
-
1.6
V
trr
Reverse recovery time
-
372
ns
Qrr
Reverse recovery charge
-
4
µC
IRRM
Reverse recovery current
ISD = 6 A,
di/dt = 100 A/µs
VDD = 60 V
-
22
A
ISD = 6 A,
di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
-
522
ns
-
5
µC
-
20
A
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
Notes:
(1)Pulse
width limited by safe operating area
(2)Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
Table 8: Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)GSO
Gate-source breakdown voltage
IGS = ± 1mA, ID=0
30
-
-
V
The built-in back-to-back Zener diodes have specifically been designed to enhance the
device's ESD capability. In this respect the Zener voltage is appropriate to achieve an
efficient and cost-effective intervention to protect the device's integrity. These integrated
Zener diodes thus avoid the usage of external components.
DocID027383 Rev 3
5/17
Electrical characteristics
2.1
STH6N95K5-2
Electrical characteristics (curves)
Figure 2: Safe operating area
ID
(A)
Figure 3: Thermal impedance
GIPG220120151710ALS
CG20930
K
δ = 0.5
10
n)
100µs
D
S(
o
O
p
lim era
ite tion
d
by in t
m his
ax a
R rea
δ = 0.2
δ = 0.1
10-1
1ms
δ = 0.05
δ = 0.02
δ = 0.01
0.1
Tj=150°C
TC=25°C
Single pulse
0.01
0.1
Z
Zthth == kk R
Rthj-C
thj-C
δδ == ttp // Ƭ
Ƭ
p
10ms
is
1
1
10
10-5
Figure 4: Output characteristics
ID
(A)
ƬƬ
10
VDS(V)
100
tp
SINGLE PULSE
-2
10-4
10-3
10-2
10-1
tp(s)
Figure 5: Transfer characteristics
AM07108v1
AM07109v1
ID
(A)
VGS=10V
12
8
10
6
8
VDS=15V
7V
6
4
4
2
6V
2
5V
0
0
5
10
15
20
25
Figure 6: Gate charge vs gate-source voltage
VGS
(V)
12
AM07110v1
VDS
0
VDS(V)
0
VDD=760V
ID=6A
8
500
400
6/17
300
0.95
0.93
0.91
0.89
0
0
14 Qg(nC)
10
VGS=10V
0.99
100
8
AM07111v1
1.01
2
6
VGS(V)
1.03
200
4
8
RDS(on)
(Ohm)
4
2
6
0.97
6
0
4
Figure 7: Static drain-source on-resistance
VDS
(V)
700
600
10
2
12
DocID027383 Rev 3
0.87
0.5
1.0
1.5
2.0
2.5
3.0
ID(A)
STH6N95K5-2
Electrical characteristics
Figure 8: Capacitance variations
C
(pF)
Figure 9: Output capacitance stored energy
AM07112v1
AM07113v1
Eoss
(µJ)
20
1000
Ciss
100
16
12
Coss
8
Crss
4
VDS(V)
0
10
1
0.1
1
10
100
Figure 10: Normalized gate threshold voltage
vs temperature
VGS(th)
(norm)
1.2
AM07114v1
0
200
400
600
800
VDS(V)
Figure 11: Normalized on-resistance vs
temperature
RDS(on)
(norm)
AM07115v1
2.5
1.1
ID=100 µA
1.0
2.0
VGS=10V
0.9
1.5
0.8
0.7
1.0
0.6
0.5
0.5
0.4
-75
-25
25
75
125
TJ(°C)
Figure 12: Source-drain diode forward
characteristics
0
-75
-25
25
75
Tj(°C)
Figure 13: Normalized V(BR)DSS vs
temperature
V(BR)DSS
(norm)
VSD
(V)
125
AM07116v1
1.2
0.95
ID=1 mA
1.1
0.85
1.0
0.75
0.9
0.65
0.55
2.0
0.8
3.0
4.0
5.0
6.0
ISD(A)
DocID027383 Rev 3
0.7
-75
-25
25
75
125
Tj(°C)
7/17
Electrical characteristics
STH6N95K5-2
Figure 14: Maximum avalanche energy vs starting Tj
EAS
(mJ)
100
AM07117v1
80
ID=3 A
VDD=50 V
60
40
20
0
0
8/17
20
40
60
80
DocID027383 Rev 3
100 120 140 Tj(°C)
STH6N95K5-2
3
Test circuits
Test circuits
Figure 15: Switching times test circuit for resistive
load
Figure 16: Gate charge test circuit
VDD
47 k Ω
12 V
1 kΩ
100 nF
I G = CONST
Vi ≤ V GS
100 Ω
D.U.T.
VG
2.7 k Ω
2200 μ F
47 k Ω
1 kΩ
PW
AM01469v 1
Figure 17: Test circuit for inductive load switching
and diode recovery times
A
A
D.U.T.
FAST
DIODE
B
B
Figure 18: Unclamped inductive load test circuit
A
D
G
S
L=100 µH
3.3
µF
B
25 Ω
1000
µF
D
G
RG
VDD
D.U.T.
S
AM01470v1
Figure 19: Unclamped inductive waveform
Figure 20: Switching time waveform
t on
V(BR)DSS
t d(on)
VD
t off
tr
t d(off)
tf
90%
90%
I DM
10%
ID
VDD
10%
0
VDD
VGS
AM01472v 1
0
DocID027383 Rev 3
10%
VDS
90%
AM01473v 1
9/17
Package mechanical data
4
STH6N95K5-2
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/17
DocID027383 Rev 3
STH6N95K5-2
4.1
Package mechanical data
Package mechanical data
Figure 21: H²PAK-2 outline
8159712_D
DocID027383 Rev 3
11/17
Package mechanical data
STH6N95K5-2
Table 9: H²PAK-2 mechanical data
mm
Dim.
Min.
12/17
Typ.
Max.
A
4.30
4.80
A1
0.03
0.20
C
1.17
1.37
e
4.98
5.18
E
0.50
0.90
F
0.78
0.85
H
10.00
10.40
H1
7.40
L
15.30
L1
1.27
1.40
L2
4.93
5.23
L3
6.85
7.25
L4
1.5
1.7
-
7.80
15.80
M
2.6
2.9
R
0.20
0.60
V
0°
8°
DocID027383 Rev 3
STH6N95K5-2
Package mechanical data
Figure 22: H²PAK-2 recommended footprint
8159712_D
DocID027383 Rev 3
13/17
Packing information
5
STH6N95K5-2
Packing information
Figure 23: Tape outline
14/17
DocID027383 Rev 3
STH6N95K5-2
Packing information
Figure 24: Reel outline
T
REE L DIMENS IONS
40 mm min.
Acc ess hole
At slot location
B
D
C
N
A
G measured
Tape slot
In core for
Full radius
At hub
Tape start
Table 10: Tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000
R
50
T
0.25
0.35
W
23.7
24.3
DocID027383 Rev 3
Min.
Max.
330
13.2
26.4
30.4
15/17
Revision history
6
STH6N95K5-2
Revision history
Table 11: Document revision history
16/17
Date
Revision
Changes
23-Jan-2015
1
First release.
04-Feb-2015
2
Updated Section 2: "Electrical characteristics"
12-Mar-2015
3
Document status changed from preliminary to producion data.
DocID027383 Rev 3
STH6N95K5-2
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DocID027383 Rev 3
17/17
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