STD3N80K5, STF3N80K5,
STP3N80K5, STU3N80K5
Nchannel 800 V, 2.8 Ω typ., 2.5 A MDmesh™ K5
Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK
Datasheet - production data
Figure 1: Internal schematic diagram
Order code
STD3N80K5
STF3N80K5
STP3N80K5
STU3N80K5
Features
Order code
STD3N80K5
V
DS
R
DS(on)
max. I
D
P
TOT
60 W
20 W STF3N80K5
800 V 3.5 Ω 2.5 A
STP3N80K5
STU3N80K5
Industry’s lowest R
DS(on)
x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
60 W
Applications
Switching applications
Description
These very high voltage N-channel Power
MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Table 1: Device summary
Marking Package
3N80K5
DPAK
TO-220FP
TO-220
IPAK
Packing
Tape and reel
Tube
July 2017 DocID025000 Rev 4
This is information on a product in full production.
1/24 www.st.com
Contents STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 9
4 Package information ..................................................................... 10
4.1
4.2
4.3
4.4
4.5
4.6
DPAK (TO-252) type A package information................................... 10
DPAK (TO-252) type E package information................................... 13
DPAK (TO-252) packing information ............................................... 15
TO-220FP package information ...................................................... 17
TO-220 type A package information ................................................ 19
IPAK (TO-251) type A package information .................................... 21
5 Revision history ............................................................................ 23
2/24 DocID025000 Rev 4
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
1
Electrical ratings
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Value
Parameter
DPAK TO-220FP TO-220 IPAK
±30
Unit
V V
I
I
GS
D
D
Gate-source voltage
Drain current (continuous) at
T
C
= 25 °C
Drain current (continuous) at
T
C
= 100 °C
Drain current (pulsed) I
D
(1)
P
TOT
Total dissipation at T
C
= 25 °C
V
ISO
Insulation withstand voltage (RMS) from all three leads to external heat-sink (t = 1 s, T
C
= 25 °C)
dv/dt (2)
Peak diode recovery voltage slope
dv/dt (3)
MOSFET dv/dt ruggedness
T j
T stg
Operating junction temperature range
Storage temperature range
60 20
2.5
2.5
1.6
10
4.5
50
-55 to 150
60 60
A
A
A
W kV
V/ns
°C
Notes:
(1)
Pulse width limited by safe operating area.
(2)
I
SD
≤ 2.5 A, di/dt =100 A/μs; V
DS
peak < V
(BR)DSS
.
(3)
V
DS
≤ 640 V.
Table 3: Thermal data
Symbol Parameter
Value
DPAK TO-220FP TO-220 IPAK
Unit
R thj-case
Thermal resistance junction-case
R thj-amb
Thermal resistance junction-ambient
R
thj-pcb
(1)
Thermal resistance junction-pcb
2.08
50
6.25
62.5 62.5
2.08 °C/W
100 °C/W
°C/W
Notes:
(1)
When mounted on FR-4 board of 1 inch², 2 oz Cu.
Symbol
Table 4: Avalanche characteristics
Parameter
I
AR
E
AS
Avalanche current, repetitive or not repetitive (pulse width limited by T jmax
)
Single pulse avalanche energy (starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Value Unit
1
65
A mJ
DocID025000 Rev 4 3/24
Electrical characteristics
2
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Symbol Parameter
Table 5: On/off-state
Test conditions
V
(BR)DSS
Drain-source breakdown voltage
V
GS
= 0 V, I
D
= 1 mA
I
DSS
Zero gate voltage drain current
I
GSS
Gate body leakage current
V
GS(th)
Gate threshold voltage
R
DS(on)
Static drain-source on-resistance
V
GS
= 0 V, V
DS
= 800 V
V
GS
= 0 V, V
DS
= 800 V,
T
C
= 125 ° C (1)
V
DS
= 0 V, V
GS
= ±20 V
V
DD
= V
GS
, I
D
= 100 µA
V
GS
= 10 V, I
D
= 1 A
Notes:
(1)
Defined by design, not subject to production test.
Symbol Parameter
Table 6: Dynamic
Test conditions
C iss
C oss
C rss
C
o(tr)
(1)
C
o(er)
(2)
R g
Q g
Q gs
Q gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent capacitance time related
Equivalent capacitance energy related
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
V
GS
= 0 V, V
DS
= 0 to 640 V f = 1 MHz, I
D
= 0 A
V
DD
= 640 V, I
D
= 2.5 A
V
GS
= 0 to 10 V
(see Figure 19: "Test circuit for gate charge behavior" )
Min. Typ. Max. Unit
800 V
1 µA
50 µA
4
2.8
±10 µA
5 V
3.5
Ω
3
Min. Typ. Max. Unit
-
-
130
14
-
- pF pF
- 0.6 - pF
-
-
-
-
-
-
20
9
15.5
9.5
1.5
7.5
-
-
-
-
-
- pF pF
Ω nC nC nC
Notes:
(1)
C o(tr)
is a constant capacitance value that gives the same charging time as C oss
while V
DS
is rising from 0 to
80% V
DSS
.
(2)
C o(er)
is a constant capacitance value that gives the same stored energy as Coss while V
DS
is rising from 0 to
80% V
DSS.
4/24 DocID025000 Rev 4
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
Table 7: Switching times
Symbol Parameter Test conditions t t d(on)
Turn-on delay time V
DD
= 400 V, I
D
= 1.25 A, R
G
= 4.7 Ω t r
Rise time
V
GS
= 10 V d(off) t f
Turn-off delay time
Fall time
(see Figure 18: "Test circuit for resistive load switching times" and
Figure 23: "Switching time waveform" )
Electrical characteristics
Min. Typ. Max. Unit
-
-
-
-
8.5
10.5
20.5
25
-
-
-
- ns ns ns ns
Symbol Parameter
Table 8: Source-drain diode
Test conditions Min. Typ. Max. Unit
I
SD
Source-drain current
I
SDM
(1)
Source-drain current (pulsed)
V
SD
(2)
Forward on voltage I
SD
= 2.5 A, V
GS
= 0 V
-
-
-
2.5
10
1.5
A
A
V t rr
Q rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 2.5 A, di/dt = 100 A/μs,
V
DD
= 60 V (see Figure 20: "Test circuit for inductive load switching and diode recovery times" )
-
-
-
265
1.2
9.2 ns
μC
A t rr
Q rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 2.5 A, di/dt = 100 A/μs,
V
DD
= 60 V, T j
= 150 °C ( see Figure
20: "Test circuit for inductive load switching and diode recovery times" )
-
-
-
430
1.9
8.8 ns
μC
A
Notes:
(1)
Pulse width limited by safe operating area
(2) Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Symbol Parameter
Table 9: Gate-source Zener diode
Test conditions Min. Typ. Max. Unit
V
(BR)GSO
Gate-source breakdown voltage
I
GS
= ±1 mA, I
D
= 0 A ±30 - - V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry.
DocID025000 Rev 4 5/24
Electrical characteristics STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area for DPAK and IPAK
Figure 3: Thermal impedance for DPAK and IPAK
Figure 4: Safe operating area for TO-220FP Figure 5: Thermal impedance for TO-220FP
Figure 6: Safe operating area for TO-220 Figure 7: Thermal impedance for TO-220
6/24 DocID025000 Rev 4
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
Figure 8: Output characteristics
Electrical characteristics
Figure 9: Transfer characteristics
Figure 10: Gate charge vs gate-source voltage Figure 11: Static drain-source on-resistance
Figure 12: Capacitance variations Figure 13: Output capacitance stored energy
DocID025000 Rev 4 7/24
Electrical characteristics
Figure 14: Normalized gate threshold voltage vs temperature
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
Figure 15: Normalized on-resistance vs temperature
Figure 16: Normalized VDS vs temperature
Figure 17: Source-drain diode forward characteristics
8/24 DocID025000 Rev 4
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
3 Test circuits
Figure 18: Test circuit for resistive load switching times
Test circuits
Figure 19: Test circuit for gate charge behavior
V
DD
RL
V
GS pulse width
2200
μF
+
I
G
= CONST
2.7 kΩ
47 kΩ
1 kΩ
100 Ω D.U.T.
V
G
AM01469v10
Figure 20: Test circuit for inductive load switching and diode recovery times
Figure 21: Unclamped inductive load test circuit
Figure 22: Unclamped inductive waveform
Figure 23: Switching time waveform
DocID025000 Rev 4 9/24
Package information
4
4.1
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
DPAK (TO-252) type A package information
Figure 24: DPAK (TO-252) type A package outline
10/24 DocID025000 Rev 4
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
Package information
Table 10: DPAK (TO-252) type A mechanical data mm
Dim.
Min. Typ. Max.
D
D1
E
E1 e e1
H
L
A
A1
A2 b b4 c c2
(L1)
L2
L4
R
V2
6.00
4.95
6.40
4.60
2.16
4.40
9.35
1.00
2.20
0.90
0.03
0.64
5.20
0.45
0.48
2.60
0.65
0.60
0°
5.10
4.70
2.28
2.80
0.80
0.20
6.20
5.25
6.60
4.80
2.40
4.60
10.10
1.50
2.40
1.10
0.23
0.90
5.40
0.60
0.60
3.00
0.95
1.00
8°
DocID025000 Rev 4 11/24
Package information STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
Figure 25: DPAK (TO-252) type A recommended footprint (dimensions are in mm)
12/24 DocID025000 Rev 4
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
4.2 DPAK (TO-252) type E package information
Figure 26: DPAK (TO-252) type E package outline
Package information
DocID025000 Rev 4 13/24
Package information
D1
E
E1 e e1
H
L
L1
L2
L4
A
A2 b b4 c c2
D
Dim.
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
Table 11: DPAK (TO-252) type E mechanical data mm
Min.
2.18
Typ.
0.65
4.95
0.46
0.46
5.97
5.21
6.35
4.32
9.94
1.50
0.89
2.286
4.572
2.74
Max.
2.39
0.13
0.884
5.46
0.61
0.60
6.22
6.73
10.34
1.78
1.27
1.02
Figure 27: DPAK (TO-252) type E recommended footprint (dimensions are in mm)
14/24 DocID025000 Rev 4
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
4.3 DPAK (TO-252) packing information
Figure 28: DPAK (TO-252) tape outline
Package information
DocID025000 Rev 4 15/24
Package information STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
Figure 29: DPAK (TO-252) reel outline
16/24
Dim.
P0
P1
P2
R
T
D1
E
F
K0
W
A0
B0
B1
D
3.9
7.9
1.9
40
0.25
15.7
1.5
1.5
1.65
7.4
2.55
Table 12: DPAK (TO-252) tape and reel mechanical data
Tape Reel mm
Dim.
Min. Max. Min.
6.8
10.4
7
10.6
12.1
1.6
1.85
7.6
2.75
4.1
8.1
2.1
A
B
C
D
G
N
T
Base qty.
Bulk qty.
1.5
12.8
20.2
16.4
50
0.35
16.3 mm
Max.
330
13.2
18.4
22.4
2500
2500
DocID025000 Rev 4
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
4.4 TO-220FP package information
Figure 30: TO-220FP package outline
Package information
DocID025000 Rev 4
7012510_Rev_12_B
17/24
Package information
Dim.
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
E
F
F1
F2
A
B
D
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
Table 13: TO-220FP package mechanical data mm
Typ. Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
16
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
28.6
9.8
2.9
15.9
9
3
30.6
10.6
3.6
16.4
9.3
3.2
18/24 DocID025000 Rev 4
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
4.5 TO-220 type A package information
Figure 31: TO-220 type A package outline
Package information
DocID025000 Rev 4 19/24
Package information
Dim. e e1
F
H1
J1
L
L1
L20
A b b1 c
D
D1
E
L30
øP
Q
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
Table 14: TO-220 type A package mechanical data mm
Typ. Min.
4.40
0.61
1.14
0.48
15.25
1.27
Max.
4.60
0.88
1.55
0.70
15.75
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
3.75
2.65
16.40
28.90
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
3.85
2.95
20/24 DocID025000 Rev 4
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
4.6 IPAK (TO-251) type A package information
Figure 32: IPAK (TO-251) type A package outline
Package information
DocID025000 Rev 4 21/24
Package information
Dim. c2
D
E e e1
H
L
L1
L2
V1
A
A1 b b2 b4
B5 c
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
Table 15: IPAK (TO-251) type A package mechanical data mm
Typ. Min.
2.20
0.90
0.64
5.20
0.30
Max.
2.40
1.10
0.90
0.95
5.40
0.45
0.48
6.00
6.40
2.28
0.60
0.60
6.20
6.60
4.40 4.60
16.10
9.00
0.80
9.40
1.20
1.00 0.80
10°
22/24 DocID025000 Rev 4
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
5
Revision history
Revision history
Date Revision
Table 16: Document revision history
Changes
12-Jul-2013
15-Jan-2014
17-Jan-2014
17-Jul-2017
1
2
3
4
First release.
– Modified: PTOT and EAS values in Table 2
– Modified: Rthj-case values in Table 3
– Modified: the entire typical values in Table 5 and 6
– Modified: ISD and ISDM max values and typical values in Table 7
– Updated: Table 24 and Table 9
– Added: Section 2.1: Electrical characteristics (curves)
– Minor text changes
– Modified: Figure 8 and 9
– Minor text changes
Updated Table 7: "Switching times"
and Section 4: "Package information" .
Minor text changes.
DocID025000 Rev 4 23/24
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
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24/24 DocID025000 Rev 4
