STGWA30H65FB
Trench gate field-stop IGBT, HB series 650 V, 30 A
high-speed in a TO-247 long leads package
Datasheet - production data
Features
Maximum junction temperature: TJ = 175 °C
High-speed switching series
Minimized tail current
VCE(sat) = 1.55 V(typ) @ IC = 30 A
Safe paralleling
Tight parameter distribution
Low thermal resistance
Applications
Figure 1: Internal schematic diagram
Photovoltaic inverters
High-frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the new HB series
of IGBTs, which represents an optimum
compromise between conduction and switching
loss to maximize the efficiency of any frequency
converter. Furthermore, the slightly positive
VCE(sat) temperature coefficient and very tight
parameter distribution result in safer paralleling
operation.
Table 1: Device summary
Order code
Marking
Package
Packing
STGWA30H65FB
GWA30H65FB
TO-247 long leads
Tube
May 2017
DocID030595 Rev 1
This is information on a product in full production.
1/14
www.st.com
Contents
STGWA30H65FB
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ................................................................................... 10
4
Package information ..................................................................... 11
4.1
5
2/14
TO-247 long leads package information ......................................... 11
Revision history ............................................................................ 13
DocID030595 Rev 1
STGWA30H65FB
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Value
Unit
Collector-emitter voltage (VGE = 0 V)
650
V
Continuous collector current at TC = 25 °C
60
Continuous collector current at TC = 100 °C
30
ICP(1)
Pulsed collector current
120
A
VGE
Gate-emitter voltage
±20
V
PTOT
Total dissipation at TC = 25 °C
260
W
TSTG
Storage temperature range
-55 to 150
Operating junction temperature range
-55 to 175
VCES
IC
TJ
Parameter
A
°C
Notes:
(1)Pulse
width limited by maximum junction temperature
Table 3: Thermal data
Symbol
Parameter
RthJC
Thermal resistance junction-case
RthJA
Thermal resistance junction-ambient
DocID030595 Rev 1
Value
0.58
50
Unit
°C/W
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Electrical characteristics
2
STGWA30H65FB
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4: Static characteristics
Symbol
V(BR)CES
VCE(sat)
Parameter
Test conditions
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
VGE = 0 V, IC = 2 mA
Min.
Typ.
650
1.55
VGE = 15 V, IC = 30 A,
TJ = 125 °C
1.65
VGE = 15 V, IC = 30 A,
TJ = 175 °C
1.75
Gate threshold voltage
VCE = VGE, IC = 1 mA
ICES
Collector cut-off current
IGES
Gate-emitter leakage current
5
Unit
V
VGE = 15 V, IC = 30 A
VGE(th)
Max.
6
2
V
7
V
VGE = 0 V, VCE = 650 V
25
µA
VCE = 0 V, VGE = ±20 V
±250
nA
Unit
Table 5: Dynamic characteristics
Symbol
4/14
Parameter
Test conditions
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
Qg
Total gate charge
Qge
Gate-emitter charge
Qgc
Gate-collector charge
VCE= 25 V, f = 1 MHz,
VGE = 0 V
VCC = 520 V, IC = 30 A,
VGE = 0 to 15 V
(see Figure 23: "Gate
charge test circuit")
DocID030595 Rev 1
Min.
Typ.
Max.
-
3659
-
-
101
-
-
76
-
-
149
-
-
25
-
-
62
-
pF
nC
STGWA30H65FB
Electrical characteristics
Table 6: Switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(off)
tf
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Turn-on delay time
-
37
-
ns
Current rise time
-
14.6
-
ns
-
1643
-
A/µs
-
146
-
ns
-
23
-
ns
-
151
-
mJ
Turn-on current slope
Turn-off-delay time
Current fall time
VCE = 400 V, IC = 30 A,
VGE = 15 V, RG = 10 Ω
(see Figure 22: "Test circuit for
inductive load switching")
Eon(1)
Turn-on switching energy
(2)
Turn-off switching energy
-
293
-
mJ
Total switching energy
-
444
-
mJ
Turn-on delay time
-
35
-
ns
Current rise time
-
16.1
-
ns
-
1496
-
A/µs
-
158
-
ns
-
65
-
ns
-
175
-
mJ
Eoff
Ets
td(on)
tr
(di/dt)on
td(off)
tf
Turn-on current slope
Turn-off-delay time
Current fall time
VCE = 400 V, IC = 30 A,
VGE = 15 V, RG = 10 Ω,
TJ = 175 °C
(see Figure 22: "Test circuit for
inductive load switching")
Eon(1)
Turn-on switching energy
(2)
Turn-off switching energy
-
572
-
mJ
Total switching energy
-
747
-
mJ
Eoff
Ets
Notes:
(1)Including
the reverse recovery of the diode. Turn-on times and energy have been measured applying as
freewheeling an external SiC diode STPSC206W.
(2)Including
the tail of the collector current.
DocID030595 Rev 1
5/14
Electrical characteristics
2.1
STGWA30H65FB
Electrical characteristics (curves)
Figure 2: Output characteristics (TJ = 25 °C)
Figure 3: Output characteristics (TJ = 175 °C)
Figure 4: Transfer characteristics
Figure 5: Collector current vs. case temperature
Figure 6: VCE(sat) vs. junction temperature
Figure 7: Power dissipation vs. case temperature
6/14
DocID030595 Rev 1
STGWA30H65FB
Electrical characteristics
Figure 8: Forward bias safe operating area
Figure 9: Collector current vs. switching frequency
Figure 10: Normalized VGE(th) vs. junction
temperature
Figure 11: Normalized V(BR)CES vs. junction
temperature
Figure 12: Switching energy vs. temperature
Figure 13: Switching energy vs. gate resistance
GIPG280120141531FSR
E (µJ)
VCC= 400V, VGE= 15V
Rg= 10Ω, IC= 30A
GIPG280120141535FSR
E (µJ)
1020
VCC= 400V, VGE= 15V
IC= 30A, TJ= 175 °C
EOFF
EOFF
600
820
EON
620
400
EON
200
420
220
0
20
40
60
80 100 120 140 160 TJ(°C)
DocID030595 Rev 1
20
3
10
17
24
31
38
45 RG(Ω)
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Electrical characteristics
STGWA30H65FB
Figure 14: Switching energy vs. collector current
GIPG280120141605FSR
E (µJ)
1200
Figure 15: Switching energy vs. collector emitter
voltage
VCC= 400V, VGE= 15V
Rg= 10Ω, TJ= 175°C
800
1000
GIPG280120141609FSR
E (µJ)
TJ= 175°C, VGE= 15V
Rg= 10Ω, IC= 30A
EOFF
EOFF
600
800
600
400
EON
400
EON
200
200
0
0
20
Figure 16: Switching times vs. collector current
t
(ns)
0
150
60 IC(A)
40
250
350
VCE(V)
450
Figure 17: Switching times vs. gate resistance
t
(ns)
GIPG100720141533FSR
TJ= 175°C, VGE= 15V,
RG= 10Ω, VCC= 400V
GIPG100720141549FSR
TJ= 175°C, VGE= 15V,
IC= 30A, VCC= 400V
tdoff
tdoff
100
tf
tdon
100
tdon
10
tf
tr
tr
1
0
10
20
30
40
50
Figure 18: Capacitance variations
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10
0
IC(A)
10
20
30
40
Figure 19: VCE(sat) vs. collector current
DocID030595 Rev 1
RG(Ω)
STGWA30H65FB
Electrical characteristics
Figure 20: Gate charge vs. gate-emitter voltage
Figure 21: Thermal impedance
DocID030595 Rev 1
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Test circuits
3
STGWA30H65FB
Test circuits
Figure 22: Test circuit for inductive load
switching
C
A
Figure 23: Gate charge test circuit
A
L=100 µH
G
E
B
B
3.3
µF
C
G
+
RG
1000
µF
VCC
D.U.T
E
-
AM01504v 1
Figure 24: Switching waveform
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DocID030595 Rev 1
STGWA30H65FB
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1
TO-247 long leads package information
Figure 25: TO-247 long leads package outline
DocID030595 Rev 1
11/14
Package information
STGWA30H65FB
Table 7: TO-247 long leads package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.90
5.00
5.10
A1
2.31
2.41
2.51
A2
1.90
2.00
2.10
b
1.16
1.26
b2
3.25
b3
2.25
c
0.59
0.66
D
20.90
21.00
21.10
E
15.70
15.80
15.90
E2
4.90
5.00
5.10
E3
2.40
2.50
2.60
e
5.34
5.44
5.54
L
19.80
19.92
20.10
P
3.50
3.60
Q
5.60
S
6.05
L1
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4.30
DocID030595 Rev 1
3.70
6.00
6.15
6.25
STGWA30H65FB
5
Revision history
Revision history
Table 8: Document revision history
Date
Revision
10-May-2017
1
Changes
Initial release
DocID030595 Rev 1
13/14
STGWA30H65FB
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