STS4DPF30L
DUAL P-CHANNEL 30V - 0.07
Ω
- 4A SO-8
STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE V
DSS
R
DS(on)
I
D
■
STS4DPF30L 30 V
TYPICAL R
DS
(on) = 0.07
Ω
<0.08
Ω
■
4 A
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
■
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
■
■
POWER MANAGEMENT IN CELLULAR
PHONES
DC-DC CONVERTER
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value
April 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Unit
V
DS
V
DGR
V
GS
Drain-source Voltage (V
Drain-gate Voltage (R
GS
Gate- source Voltage
GS
= 0)
= 20 k
Ω
)
30
30
± 16
V
V
V
I
D
I
DM
(
•)
Drain Current (continuous) at T
C
= 25°C Single Operation
Drain Current (continuous) at T
C
= 100°C Single Operation
Drain Current (pulsed)
P tot
Total Dissipation at T
C
= 25°C Dual Operation
Total Dissipation at T
C
= 25°C Single Operation
(
•)
Pulse width limited by safe operating area.
4
2.5
16
2.0
1.6
A
A
A
W
W
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
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STS4DPF30L
THERMAL DATA
Rthj-amb (*)Thermal Resistance Junction-ambient
T j
T stg
Thermal Operating Junction-ambient
Storage Temperature
(*) When Mounted on 1 inch 2 FR-4 board, 2 oz of Cu and t
[
10 sec.
Single Operation
Dual Operating
78
62.5
-55 to150
-55 to 150
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min.
Typ.
Max.
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 µA, V
GS
= 0 30
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125°C
V
GS
= ± 16 V
1
10
±100
°C/W
°C/W
°C
°C
Unit
V
µA
µA nA
ON (*)
Symbol
V
GS(th)
R
DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V
DS
= V
GS
V
GS
= 10 V
V
GS
= 4.5 V I
I
I
D
D
D
= 250 µA
= 2 A
= 2 A
Min.
1
Typ.
Max.
0.070
0.085
0.08
0.10
Unit
V
Ω
Ω
DYNAMIC
Symbol g fs (*)
C iss
C oss
C rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS
= 15V I
D
= 2 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
10
1350
490
130
Max.
Unit
S pF pF pF
2/6
STS4DPF30L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions t d(on) t r
Turn-on Delay Time
Rise Time
V
DD
R
G
= 15 V
= 4.7
Ω
V
I
D
GS
= 2 A
= 4.5 V
(Resistive Load, Figure 1)
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 24 V I
D
= 4 A V
GS
= 5 V
(See test circuit, Figure 2)
Min.
SWITCHING OFF
Symbol t d(off) t f
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
V
DD
= 15 V
R
G
= 4.7
Ω,
I
V
D
GS
= 2 A
= 4.5 V
(Resistive Load, Figure 1)
Min.
SOURCE DRAIN DIODE
Symbol Parameter
I
I
SD
SDM
(
•
)
V
SD
(*)
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage t rr
Q rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)
Pulse width limited by safe operating area.
Test Conditions
I
SD
= 4 A V
GS
= 0
I
SD
= 4 A
V
DD
= 15 V di/dt = 100A/µs
T j
= 150°C
(See test circuit, Figure 3)
Min.
Typ.
25
35
Max.
Unit ns ns
12.5
5
3
16 nC nC nC
Typ.
125
35
Max.
Unit ns ns
Typ.
Max.
4
16
1.2
45
36
1.6
Unit
A
A
V ns nC
A
3/6
STS4DPF30L
Fig. 1: Switching Times Test Circuits For Resistive
Load
Fig. 2: Gate Charge test Circuit
Fig. 3: Test Circuit For Diode Recovery Behaviour
4/6
DIM.
a3 b b1
A a1 a2
C c1
D
E
L
M
S e e3
F
STS4DPF30L
MIN.
0.1
0.65
0.35
0.19
0.25
4.8
5.8
3.8
0.4
SO-8 MECHANICAL DATA
mm
TYP.
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
45 (typ.)
MIN.
0.003
0.025
0.013
0.007
0.010
5.0
6.2
0.188
0.228
1.27
3.81
4.0
1.27
0.6
8 (max.)
0.14
0.015
inch
TYP.
0.050
0.150
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
0.196
0.244
0.157
0.050
0.023
0016023
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STS4DPF30L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
2002 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
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