STF26N60M2, STFI26N60M2
Nchannel 600 V, 0.14 Ω typ., 20 A MDmesh™ M2
Power MOSFETs in TO-220FP and I²PAKFP packages
Datasheet - production data
TO-220FP
1
2
3
G(1)
Order code
STF26N60M2
STFI26N60M2
1 2
3
I
2
PAKFP (TO-281)
Figure 1: Internal schematic diagram
D(2)
S(3)
Features
Order code
V
DS
@
T
Jmax
R
DS(on) max.
I
D
P
TOT
STF26N60M2
650 V
0.165 Ω
20 A
30
W
STFI26N60M2
•
Extremely low gate charge
•
Excellent output capacitance (C
OSS
) profile
•
100% avalanche tested
•
Zener-protected
Applications
•
Switching applications
•
LCC converters, resonant converters
AM15572v1_no_tab
Description
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
Table 1: Device summary
Marking Package Packing
26N60M2
TO-220FP
I²PAKFP
Tube
July 2015 DocID027600 Rev 2
This is information on a product in full production.
1/15 www.st.com
Contents
Contents
STF26N60M2, STFI26N60M2
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1
4.2
TO-220FP package information ...................................................... 10
I²PAKFP (TO-281) package information ......................................... 12
5 Revision history ............................................................................ 14
2/15 DocID027600 Rev 2
STF26N60M2, STFI26N60M2
1 Electrical ratings
Symbol
V
GS
I
D
(1)
I
DM
(2)
P
TOT
dv/dt
(3) dv/dt
(4)
V
ISO
T stg
T j
Table 2: Absolute maximum ratings
Parameter
Gate-source voltage
Drain current (continuous) at T case
= 25 °C
Drain current (continuous) at T case
= 100 °C
Drain current (pulsed)
Total dissipation at T case
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; T
C
= 25 °C)
Storage temperature
Operating junction temperature
Notes:
(1)
Limited by maximum junction temperature.
(2)
Pulse width is limited by safe operating area.
(3)
I
SD
≤ 20 A, di/dt=400 A/μs; V
DS(peak)
< V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
.
(4)
V
DS
≤ 480 V.
Symbol
Table 3: Thermal data
Parameter
R thj-case
R thj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
Symbol
I
AR
(1)
E
AR
(2)
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive
Single pulse avalanche energy
Notes:
(1)
Pulse width limited by T jmax
.
(2)
starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V.
Electrical ratings
Value
±25
20
13
80
30
15
50
2.5
-55 to 150
Value
4.2
62.5
Value
3.8
250
Unit
V
A
A
W
V/ns kV
°C
Unit
°C/W
Unit
A mJ
DocID027600 Rev 2 3/15
Electrical characteristics
2 Electrical characteristics
(T case
= 25 °C unless otherwise specified)
Symbol Parameter
Table 5: Static
Test conditions
V
(BR)DSS
Drain-source breakdown voltage
V
GS
= 0 V, I
D
= 1 mA
I
DSS
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 600 V
V
GS
= 0 V, V
DS
= 600 V,
T case
= 125 °C
I
GSS
Gate-body leakage current
V
GS(th)
Gate threshold voltage
R
DS(on)
Static drain-source onresistance
Symbol
C iss
C oss
C rss
C
oss eq.
(1)
R
G
Q g
Q gs
Q gd
V
DS
= 0 V, V
GS
= ±25 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 10 A
Parameter
Table 6: Dynamic
Test conditions
Input capacitance
Output capacitance V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
Reverse transfer capacitance
Equivalent output capacitance
V
DS
= 0 to 480 V, V
GS
= 0 V
Intrinsic gate resistance f = 1 MHz, I
D
= 0 A
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 480 V, I
D
= 20 A,
V
GS
= 10 V (see Figure 15:
"Gate charge test circuit" )
STF26N60M2, STFI26N60M2
Min. Typ. Max. Unit
600 V
1
µA
100
±10 µA
3 4 V
0.14 0.165
Ω
2
Min. Typ. Max. Unit
- 1360
- 88
-
- pF
- 2 -
-
-
-
-
-
124
4
34
5.6
16.3
-
-
-
-
- pF
Ω nC
Notes:
(1)
C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss
when V
DS increases from 0 to 80% V
DSS
.
Symbol Parameter
Table 7: Switching times
Test conditions Min. Typ. Max. Unit t d(on) t r t d(off) t f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 300 V, I
D
= 10 A
R
G
= 4.7
Ω, V
GS
= 10 V (see
Figure 14: "Switching times test circuit for resistive load" and Figure 19: "Switching time waveform" )
- 20.2
- 8
- 66
- 10
-
-
-
- ns
4/15 DocID027600 Rev 2
STF26N60M2, STFI26N60M2
Symbol Parameter
Table 8: Source-drain diode
Test conditions
I
SD
Source-drain current
I
SDM
(1)
Source-drain current
(pulsed)
V
SD
(2)
Forward on voltage t rr
Q rr
Reverse recovery time
Reverse recovery charge
I
I
RRM t
Q rr rr
RRM
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
V
GS
= 0 V, I
SD
= 20 A
I
SD
= 20 A, di/dt = 100 A/µs,
V
DD
= 60 V (see Figure 16:
"Test circuit for inductive load switching and diode recovery times" )
I
SD
= 20 A, di/dt = 100 A/µs,
V
DD
= 60 V, T j
= 150 °C (see
Figure 16: "Test circuit for inductive load switching and diode recovery times" )
Electrical characteristics
Min. Typ. Max. Unit
- 20 A
- 80 A
-
-
-
360
5
1.6 V ns
µC
- 27
-
-
-
556
8
29
A ns
µC
A
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID027600 Rev 2 5/15
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
STF26N60M2, STFI26N60M2
Figure 3: Thermal impedance
Figure 4: Output characteristics Figure 5: Transfer characteristics
6/15
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
DocID027600 Rev 2
STF26N60M2, STFI26N60M2
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Normalized gate threshold voltage vs temperature
Figure 10: Normalized on-resistance vs temperature
Figure 11: Normalized V(BR)DSS vs temperature
Figure 12: Output capacitance stored energy
Figure 13: Source-drain diode forward characteristics
DocID027600 Rev 2 7/15
Test circuits
3 Test circuits
Figure 14: Switching times test circuit for resistive load
STF26N60M2, STFI26N60M2
Figure 15: Gate charge test circuit
Figure 16: Test circuit for inductive load switching and diode recovery times
Figure 17: Unclamped inductive load test circuit
Figure 18: Unclamped inductive waveform
Figure 19: Switching time waveform
8/15 DocID027600 Rev 2
STF26N60M2, STFI26N60M2
4 Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
DocID027600 Rev 2 9/15
Package information
4.1 TO-220FP package information
STF26N60M2, STFI26N60M2
Figure 20: TO-220FP package outline
10/15 DocID027600 Rev 2
7012510_Rev_K_B
STF26N60M2, STFI26N60M2
Dim.
L4
L5
L6
L7
G1
H
L2
L3
Dia
F
F1
F2
G
A
B
D
E
Table 9: TO-220FP package mechanical data mm
Min. Typ.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
16
28.6
9.8
2.9
15.9
9
3
Package information
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
DocID027600 Rev 2 11/15
Package information
4.2 I²PAKFP (TO-281) package information
STF26N60M2, STFI26N60M2
Figure 21: I²PAKFP (TO-281) package outline
8291506 Re v. C
12/15 DocID027600 Rev 2
STF26N60M2, STFI26N60M2
Dim.
H
L1
L2
L3
L4
L5
L6
E
F
F1
G
A
B
D
D1
Table 10: I²PAKFP (TO-281) mechanical data mm
Min. Typ.
4.40
2.50
2.50
0.65
0.45
0.75
-
4.95
10.00
21.00
13.20
10.55
2.70
0.85
7.50 7.60
Package information
Max.
10.40
23.00
14.10
10.85
3.20
1.25
7.70
4.60
2.70
2.75
0.85
0.70
1.00
1.20
5.20
DocID027600 Rev 2 13/15
Revision history
5
STF26N60M2, STFI26N60M2
Revision history
Date Revision
Table 11: Document revision history
Changes
05-Mar-2015
30-July-2015
1
2
First release.
Text and formatting changes throughout document
Datasheet promoted from preliminary data to production data
In Section Electrical characteristics :
- updated and renamed table Static (was On/off states)
- updated table Dynamic , Switching times and Source-drain diode
- added section Electrical characteristics (curves)
14/15 DocID027600 Rev 2
STF26N60M2, STFI26N60M2
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DocID027600 Rev 2 15/15
