STP140N6F7
Nchannel 60 V, 0.0031 Ω typ., 80 A STripFET™ F7
Power MOSFET in a TO-220 package
Datasheet - production data
Features
Order code V
DS
R
DS(on)
max. I
D
STP140N6F7 60 V
0.0035 Ω
80 A
P
TOT
158 W
•
Among the lowest R
DS(on)
on the market
•
Excellent figure of merit (FoM)
•
Low C rss
/C iss
ratio for EMI immunity
•
High avalanche ruggedness
Applications
•
Switching applications
Figure 1: Internal schematic diagram
Order code
STP140N6F7
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Table 1: Device summary
Marking Package
140N6F7 TO-220
Packing
Tube
May 2015 DocID027726 Rev 2
This is information on a product in full production.
1/12 www.st.com
Contents
Contents
STP140N6F7
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 5
3 Test circuits ..................................................................................... 7
4 Package information ....................................................................... 8
4.1
TO-220 type A package information .................................................. 9
5 Revision history ............................................................................ 11
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STP140N6F7
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
(1)
I
DM
(2)
P
TOT
E
AS
(3)
T stg
T j
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T case
= 25 °C
Drain current (continuous) at T case
= 100 °C
Drain current (pulsed)
Total dissipation at T case
= 25 °C
Single pulse avalanche energy
Storage temperature
Maximum junction temperature
Notes:
(1)
Current is limited by package.
(2)
Pulse width is limited by safe operating area.
(3)
Starting T j
= 25°C, I
D
= 40 A, V
DD
= 30 V.
Symbol
Table 3: Thermal data
Parameter
R thj-case
R thj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
Electrical ratings
Value
60
±20
80
80
320
158
160
-55 to 175
175
Unit
V
V
A
A
W mJ
°C
Value
0.95
62.5
Unit
°C/W
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Electrical characteristics
2
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STP140N6F7
Electrical characteristics
(T case
= 25 °C unless otherwise specified)
Symbol Parameter
Table 4: Static
Test conditions
V
(BR)DSS
Drain-source breakdown voltage
V
GS
= 0 V, I
D
= 1 mA
I
DSS
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 60 V
V
GS
= 0 V, V
DS
= 60 V,
T case
= 125 °C
I
GSS
Gate-body leakage current
V
GS(th)
Gate threshold voltage
R
DS(on)
Static drain-source onresistance
V
DS
= 0 V, V
GS
= +20 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 40 A
Symbol Parameter
Table 5: Dynamic
Test conditions
C
C
C iss oss rss
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
V
V
DS
GS
= 25 V, f = 1 MHz,
= 0 V
Q g
Q gs
Q gd
Gate-drain charge
V
DD
V
GS
= 30 V, I
D
= 80 A,
= 10 V (see Figure 14:
"Gate charge test circuit" )
Symbol t d(on) t t r f t d(off)
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6: Switching times
Test conditions
V
DD
= 30 V, I
D
= 40 A
R
G
= 4.7
Ω, V
GS
= 10 V (see
Figure 13: "Switching times test circuit for resistive load" and Figure 18: "Switching time waveform" )
Symbol Parameter
V
SD
(1)
Forward on voltage
Table 7: Source-drain diode
Test conditions
V
GS
= 0 V, I
SD
= 80 A
I t
Q rr rr
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
V
SD
DD
= 80 A, di/dt = 100 A/µs,
= 48 V (see
Notes:
(1)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Figure 15:
"Test circuit for inductive load switching and diode recovery times" )
Min. Typ.
60 V
1
µA
100
100 nA
4 V
0.0031 0.0035
Ω
2
Min. Typ.
-
-
3100
1520
-
-
-
-
-
-
193
55
19
18
Min. Typ.
- 24
-
-
68
39
- 20
Min. Typ.
-
- 42.4
38.2
1.8
Max. Unit
Max. Unit
-
- pF
-
-
-
- nC
Max. Unit
-
-
- ns
-
Max. Unit
1.2 V ns nC
A
DocID027726 Rev 2
STP140N6F7
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
Electrical characteristics
Figure 3: Thermal impedance
Figure 4: Output characteristics Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
DocID027726 Rev 2 5/12
Electrical characteristics
Figure 8: Capacitance variations
STP140N6F7
Figure 9: Normalized gate threshold voltage vs temperature
Figure 10: Normalized on-resistance vs temperature
Figure 11: Normalized V
(BR)DSS
vs temperature
Figure 12: Source-drain diode forward characteristics
6/12 DocID027726 Rev 2
STP140N6F7
3 Test circuits
Figure 13: Switching times test circuit for resistive load
Test circuits
Figure 14: Gate charge test circuit
12 V
47 k
Ω
100 nF
1 k
Ω
V
DD
I
G
= CONST
V i
≤ V
GS
100 Ω
D.U.T.
2.7 k
Ω V
G
2200 μ F
47 k
Ω
1 k
Ω
P
W
AM01469v 1
Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit
25 Ω
G
A
D
D.U.T.
S
B
R
G
A
FAST
DIODE
A
B
B
L=100 µH
G
D
D.U.T.
S
3.3
µF
1000
µF
V
DD
AM01470v1
Figure 17: Unclamped inductive waveform
V
(BR)DSS
V
D
V
DD
I
D
I
DM
V
DD
AM01472v 1
0
Figure 18: Switching time waveform t d(on) t on t r t d(off) t off t f
90% 90%
10%
10% V
DS
V
GS
90%
0
10% AM01473v 1
DocID027726 Rev 2 7/12
Package information
4 Package information
STP140N6F7
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
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STP140N6F7
4.1 TO-220 type A package information
Figure 19: TO-220 type A package outline
Package information
DocID027726 Rev 2 9/12
Package information
Dim.
L
L1
L20
L30 e1
F
H1
J1
øP
Q
D
D1
E e
A b b1 c
Table 8: TO-220 type A mechanical data mm
Min. Typ.
4.40
0.61
1.14
0.48
15.25
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
16.40
28.90
3.75
2.65
STP140N6F7
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
Max.
4.60
0.88
1.70
0.70
15.75
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STP140N6F7
5
Revision history
Revision history
Date
Table 9: Document revision history
Revision Changes
07-Apr-2015
19-May-2015
1
2
First release.
In section 2.1 Electrical characteristics (curves):
- updated Figure 8: Capacitance variations
DocID027726 Rev 2 11/12
STP140N6F7
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