STP180N4F6
Nchannel 40 V, 2.1 mΩ typ., 120 A STripFET™ F6
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code V
DS
R
DS(on)
max.
STP180N4F6 40 V 2.7 mΩ
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
I
D
P
TOT
120 A 190 W
Applications
Switching applications
Power tools
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting
Power MOSFET exhibits very low R
DS(on)
in all packages.
Order code
STP180N4F6
Table 1: Device summary
Marking Package
180N4F6 TO-220
Packing
Tube
October 2016 DocID028221 Rev 2
This is information on a product in full production.
1/13 www.st.com
Contents
Contents
STP180N4F6
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1
TO-220 type A package information ................................................ 10
5 Revision history ............................................................................ 12
2/13 DocID028221 Rev 2
STP180N4F6
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
(1)
I
DM
(1)(2)
P
TOT
T stg
T j
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T case
= 25 °C
Drain current (continuous) at T case
= 100 °C
Drain current (pulsed)
Total dissipation at T case
= 25 °C
Storage temperature range
Operating junction temperature range
Notes:
(1)
Limited by package.
(2)
Pulse width limited by safe operating area.
Symbol
Table 3: Thermal data
Parameter
R thj-case
R thj-amb
Thermal resistance junction-case
Thermal resistance junction-amb
Electrical ratings
Value
40
±20
120
120
480
190
-55 to 175
Unit
V
V
A
A
W
°C
Value
0.78
62.5
Unit
°C/W
DocID028221 Rev 2 3/13
Electrical characteristics
2 Electrical characteristics
(T case
= 25 °C unless otherwise specified)
Symbol Parameter
Table 4: Static
Test conditions
V
(BR)DSS
Drain-source breakdown voltage
V
GS
= 0 V, I
D
= 250 µA
I
DSS
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 40 V
V
GS
= 0 V, V
DS
= 40 V,
T case
= 125 °C (1)
I
GSS
Gate-body leakage current
V
GS(th)
Gate threshold voltage
R
DS(on)
Static drain-source onresistance
V
DS
= 0 V, V
GS
= ±20 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 60 A
STP180N4F6
Min. Typ. Max. Unit
40
3
V
1
µA
100
±100 nA
4.5 V
2.1 2.7 mΩ
Notes:
(1)
Defined by design, not subject to production test.
Symbol Parameter
Table 5: Dynamic
Test conditions
C iss
C oss
C rss
Q g
Q gs
Q gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 25 V, f = 1 MHz, V
GS
= 0 V
Min. Typ. Max. Unit
-
-
7735
745
-
- pF
- 560 -
V
DD
= 20 V, I
D
= 120 A,
V
GS
= 10 V (see Figure 14: "Test circuit for gate charge behavior" )
-
-
-
130
36
42
-
-
- nC
Symbol Parameter t d(on)
Turn-on delay time t r
Rise time t d(off)
Turn-off delay time t f
Fall time
Table 6: Switching times
Test conditions
V
DD
= 20 V, I
D
= 60 A R
G
= 4.7 Ω,
V
GS
= 10 V (see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform" )
Min. Typ. Max. Unit
-
-
-
-
24
150
106
57
-
-
-
- ns
4/13 DocID028221 Rev 2
STP180N4F6
Symbol Parameter
I
SD
(1)
Source-drain current
I
SDM
(2)
Source-drain current
(pulsed)
V
SD
(2)
Forward on voltage t rr
Q rr
Reverse recovery time
Reverse recovery charge
I
RRM
Reverse recovery current
Table 7: Source-drain diode
Test conditions
I
V
V
GS
SD
= 0 V, I
SD
= 120 A
= 120 A, di/dt = 100 A/µs,
DD
= 32 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times" )
Electrical characteristics
Min. Typ. Max. Unit
-
-
-
-
-
-
36
40
2.3
120
480
1.3
A
A
V ns nC
A
Notes:
(1)
Limited by package.
(2)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID028221 Rev 2 5/13
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
STP180N4F6
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
6/13 DocID028221 Rev 2
STP180N4F6
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Normalized gate threshold voltage vs temperature
Figure 10: Normalized on-resistance vs temperature
Figure 11: Normalized V
(BR)DSS
vs temperature
Figure 12: Source-drain diode forward characteristics
DocID028221 Rev 2 7/13
Test circuits
3 Test circuits
Figure 13: Test circuit for resistive load switching times
STP180N4F6
Figure 14: Test circuit for gate charge behavior
8/13
Figure 15: Test circuit for inductive load switching and diode recovery times
Figure 16: Unclamped inductive load test circuit
Figure 17: Unclamped inductive waveform
Figure 18: Switching time waveform
DocID028221 Rev 2
STP180N4F6
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
DocID028221 Rev 2 9/13
Package information
4.1 TO-220 type A package information
Figure 19: TO-220 type A package outline
STP180N4F6
10/13 DocID028221 Rev 2
STP180N4F6
Dim. e1
F
H1
J1
L
L1
L20
D
D1
E e
A b b1 c
L30
øP
Q
Table 8: TO-220 type A mechanical data mm
Min. Typ.
4.40
0.61
1.14
0.48
15.25
1.27
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
16.40
28.90
3.75
2.65
Package information
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
3.85
2.95
Max.
4.60
0.88
1.55
0.70
15.75
DocID028221 Rev 2 11/13
Revision history
5
STP180N4F6
Revision history
Date Revision
Table 9: Document revision history
Changes
07-Aug-2015
11-Oct-2016
1
2
First release.
Datasheet promoted from preliminary to production data.
Changed Figure 5: "Transfer characteristics" .
Minor text changes.
12/13 DocID028221 Rev 2
STP180N4F6
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