STD90NS3LLH7
Nchannel 30 V, 2.8 mΩ typ., 80 A STripFET™ H7
Power MOSFET plus monolithic Schottky in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code V
DS
R
DS(on)
max. I
D
P
TOT
STD90NS3LLH7 30 V 3.4 mΩ
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Embedded Schottky diode
80 A 57 W
Applications
Switching applications
Description
This device exhibits low on-state resistance and capacitance for improved conduction and switching performance.
Order code
STD90NS3LLH7
S(3)
NG1D2TS3Sch
Table 1: Device summary
Marking Package
90NS3LLH7 DPAK
Packing
Tape and reel
February 2016 DocID025367 Rev 4
This is information on a product in full production.
1/14 www.st.com
Contents
Contents
STD90NS3LLH7
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 5
3 Test circuits ..................................................................................... 7
4 Package information ....................................................................... 8
4.1
4.2
DPAK (TO-252) type A package information..................................... 8
DPAK (TO-252) packing information ............................................... 11
5 Revision history ............................................................................ 13
2/14 DocID025367 Rev 4
STD90NS3LLH7
1 Electrical ratings
Symbol
V
DS
V
GS
I
D
(1)
I
DM
(1)(2)
P
TOT
(1)
T stg
T j
Table 2: Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Storage temperature
Operating junction temperature
Notes:
(1)
This value is rated according to R thj-c
and limited by wire bonding
(2)
Pulse width limited by safe operating area.
Table 3: Thermal data
Parameter Symbol
R
thj-pcb
(1)
R thj-case
Thermal resistance junction-pcb max
Thermal resistance junction-case max
Notes:
(1)
When mounted on a 1 inch², FR-4 board, 2oz Cu
Electrical ratings
Value
30
±20
80
65
320
57
-55 to 150
Unit
V
V
A
A
A
W
°C
Value
50
2.2
Unit
°C/W
DocID025367 Rev 4 3/14
Electrical characteristics
2 Electrical characteristics
STD90NS3LLH7
(T
C
= 25 °C unless otherwise specified)
Symbol Parameter
Table 4: Static
Test conditions
V
(BR)DSS
Drain-source breakdown voltage I
D
= 1 mA, V
GS
= 0 V
I
DSS
Zero gate voltage drain current V
GS
= 0 V, V
DS
= 24 V
I
GSS
Gate-body leakage current
V
GS(th)
Gate threshold voltage
V
V
GS
DS
= ±20 V, V
= V
GS
, I
D
DS
= 0 V
= 1 mA
R
DS(on)
Static drain-source on-resistance
V
GS
= 10 V, I
D
= 40 A
V
GS
= 4.5 V, I
D
= 40 A
Symbol Parameter
Table 5: Dynamic
Test conditions
Min. Typ. Max. Unit
30
1.2
V
500 µA
±100 nA
V
2.8 3.4 mΩ
4.1 5.3 mΩ
C iss
C oss
C rss
Q g
Q gs
Q gd
R g
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0 V
V
DD
= 15 V, I
D
= 80 A,
V
GS
= 4.5 V (see Figure 13:
"Test circuit for gate charge behavior"
f = 1 MHz, gate DC;
Bias = 0, test signal level = 20 mV, I
D
= 0 A
Symbol Parameter t d(on)
Turn-on delay time t r
Rise time t d(off)
Turn-off delay time t f
Fall time
Table 6: Switching times
Test conditions
V
DD
= 15 V, I
D
= 40 A, R
G
= 4.7
Ω,
V
GS
= 4.5 V (see Figure 12: "Test circuit for resistive load switching times" and Figure 17: "Switching time waveform" )
Symbol Parameter
V
SD
(1)
Forward on voltage t rr
Reverse recovery time
I
Q rr
RRM
Reverse recovery charge
Reverse recovery current
Table 7: Source drain diode
Test conditions
I
I
SD
D
V
= 2 A, V
GS
= 0 V
= 40 A, di/dt = 100 A/µs,
DD
= 20 V (see switching and diode recovery times" )
Figure 14: "Test circuit for inductive load
Min. Typ. Max. Unit
-
-
-
-
-
-
2110
640
42
13.7
7.5
3.3
-
-
-
-
-
- pF nC
0.4 0.7
Min. Typ. Max. Unit
-
-
-
-
26.4
10.4
31.8
12.5
-
-
-
- ns
Min. Typ. Max. Unit
-
-
-
- 1.5
2
0.4 0.7
35.2
26.4
Ω
V ns nC
A
Notes:
(1)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
4/14 DocID025367 Rev 4
STD90NS3LLH7
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
Electrical characteristics
Figure 3: Thermal impedance
Figure 4: Output characteristics Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
DocID025367 Rev 4 5/14
Electrical characteristics
Figure 8: Capacitance variations
STD90NS3LLH7
Figure 9: Normalized gate threshold voltage vs temperature
Figure 10: Normalized on-resistance vs temperature
Figure 11: Normalized V(BR)DSS vs temperature
6/14 DocID025367 Rev 4
STD90NS3LLH7
3 Test circuits
Figure 12: Test circuit for resistive load switching times
Test circuits
Figure 13: Test circuit for gate charge behavior
Figure 14: Test circuit for inductive load switching and diode recovery times
Figure 15: Unclamped inductive load test circuit
Figure 16: Unclamped inductive waveform
Figure 17: Switching time waveform
DocID025367 Rev 4 7/14
Package information
4
4.1
Package information
STD90NS3LLH7
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
DPAK (TO-252) type A package information
Figure 18: DPAK (TO-252) type A package outline
8/14 DocID025367 Rev 4
0068772_A_21
STD90NS3LLH7
Dim.
D1
E
E1 e e1
H
L
(L1)
L2
L4
R
V2 b4 c c2
D
A
A1
A2 b
Table 8: DPAK (TO-252) type A mechanical data
Package information mm
Min. Typ. Max.
4.95
6.40
4.60
2.16
4.40
9.35
1.00
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
2.60
0.65
0.60
0°
5.10
4.70
2.28
2.80
0.80
0.20
5.25
6.60
4.80
2.40
4.60
10.10
1.50
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
3.00
0.95
1.00
8°
DocID025367 Rev 4 9/14
Package information STD90NS3LLH7
Figure 19: DPAK (TO-252) recommended footprint (dimensions are in mm)
FP_0068772_21
10/14 DocID025367 Rev 4
STD90NS3LLH7
4.2 DPAK (TO-252) packing information
Figure 20: DPAK (TO-252) tape outline
Package information
DocID025367 Rev 4 11/14
Package information
Figure 21: DPAK (TO-252) reel outline
STD90NS3LLH7
12/14
Dim.
F
K0
P0
P1
P2
R
T
W
A0
B0
B1
D
D1
E
7.9
1.9
40
0.25
15.7
1.5
1.5
1.65
7.4
2.55
3.9
Table 9: DPAK (TO-252) tape and reel mechanical data
Tape Reel mm
Dim.
Min.
6.8
10.4
Max.
7
10.6
12.1
1.6
1.85
7.6
2.75
4.1
8.1
2.1
A
B
C
D
G
N
T
Base qty.
Bulk qty.
Min.
1.5
12.8
20.2
16.4
50
0.35
16.3 mm
Max.
330
13.2
18.4
22.4
2500
2500
DocID025367 Rev 4
STD90NS3LLH7
5 Revision history
Date
17-Apr-2014
07-Sep-2015
29-Oct-2015
10-Feb-2016
Revision
Table 10: Document revision history
Changes
1
2
3
4
Revision history
First release.
Text and formatting changes throughout document
Removed all TO-220 (STP90NS3LLH7) package references and data
On cover page:
- updated title and Features
In section Electrical ratings updated table Absolute maximum ratings
In section Electrical characteristics
- updated and renamed table Static (was On /off states)
- updated tables Dynamic and Source drain diode
Added section Electrical characteristics (curves)
Updated and renamed section Package information (was Package mechanical data)
Updated title and features in cover page.
Updated Table 2: "Absolute maximum ratings", Table 5: "Dynamic" and Figure 2: "Safe operating area".
Minor text changes.
Document status promoted from preliminary to production data.
DocID025367 Rev 4 13/14
STD90NS3LLH7
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– All rights reserved
14/14 DocID025367 Rev 4
