STMicroelectronics STTH3L06 Datasheet
Advertisement
Advertisement
STTH3L06
Turbo 2 ultrafast high voltage rectifier
Datasheet - production data
K
SMB
A
A K
A
K
SMC
DO-201AD
Features
Ultrafast switching
Low forward voltage drop
Low thermal resistance
Low leakage current (platinum doping)
Description
This device uses ST Turbo 2 600 V technology, and is particularly suited as boost diode in discontinuous or critical mode power factor corrections.
It is also intended for use as a freewheeling diode in power supplies and other power switching applications.
Table 1: Device summary
Symbol Value
I
F(AV)
3 A
V
RRM
I
R
(max.)
T j
(max.)
V
F
(typ.) t rr
(typ.)
600 V
100 µA
175 °C
0.85 V
60 ns
Table 2: Order codes
Part number Marking
STTH3L06
STTH3L06U
STTH3L06S
STTH3L06
3L6U
S06
April 2016 DocID8322 Rev 4
This is information on a product in full production.
1/11 www.st.com
Characteristics
1 Characteristics
STTH3L06
Table 3: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol Parameter Value
V
RRM
I
F(RMS)
I
I
F(AV)
FSM
T stg
T j
Repetitive peak reverse voltage
Forward rms current
Average forward current δ =
0.5, square wave
DO-201AD/SMC TI = 100 °C
SMB TI = 80 °C
DO-201AD
Surge non repetitive forward current, t p
= 10 ms sinusoidal
SMB/SMC
Storage temperature range
Maximum operating junction temperature
600
10
3
70
60
-65 to +175
+175
Unit
V
A
A
A
A
°C
°C
Symbol
R th(j-l)
R th(j-a)
Junction to lead
Junction to ambient
Table 4: Thermal parameters
Parameter
DO-201AD L = 10 mm
SMB
SMC
DO-201AD L = 10 mm
Maximum Unit
20
25
20
75
°C/W
Symbol
I
R
V
F
Table 5: Static electrical characteristics
Parameter Test conditions Min. Typ. Max. Unit
Reverse leakage current
Forward voltage drop
T
T
T
T j j j j
= 25 °C
= 150 °C
= 25 °C
= 150 °C
I
V
F
R
= V
RRM
= 3 A
-
-
-
-
3
15 100
1.3
0.85 1.05
µA
V
To evaluate the conduction losses use the following equation:
P = 0.89 x I
F(AV)
+ 0.055 I
F
2
(RMS)
Symbol t rr t fr
V
FP
Parameters
Reverse recovery time
Forward recovery time
Forward recovery voltage
Table 6: Dynamic characteristics
T j
= 25 °C
Test conditions
I
F
= 1 A; dI
F
/dt = -
50 A/μs;
V
R
= 30 V
I
F
= 3 A; dI
F
/dt = 100
A/μs; V
FR
= 1.1 x V
Fmax
T j
= 25 °C
I
F
= 3 A; dl
F
/dt = 100 A/µs
Min. Typ. Max. Unit
-
-
-
60 85
100
7.5 ns
V
2/11 DocID8322 Rev 4
STTH3L06
1.1 Characteristics (curves)
Characteristics
Figure 1: Conduction losses versus average current
Figure 2: Forward voltage drop versus forward current
IFM(A)
1.E+02
4.5
P(W)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.5
1.0
δ = 0.05
1.5
δ = 0.1
2.0
δ = 0.2
IF(AV)(A)
2.5
δ = 0.5
3.0
δ
= tp /T
T
3.5
δ = 1 tp
4.0
1.E+01
1.E+00
1.E-01
T j
= 150 °C
(Maximum values)
T j
= 150 °C
(Typical values)
T j
= 25 °C
(Maximum values)
VFM(V)
1.E-02
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Figure 3: Relative variation of thermal impedance junction ambient versus pulse duration
(epoxy printed circuit FR4, e
CU
= 35 µm)
1.0
0.9
0.8
0.7
0.6
Zth(j-a)/Rth(j-a)
DO-201AD
L leads
=10mm
0.5
0.4
0.3
0.2
0.1
0.0
1.E-01
Single pulse
1.E+00 1.E+01 1.E+02 tP(s)
1.E+03
6
4
2
0
0
20
Figure 4: Peak reverse recovery current versus dI
F
/dt (typical values)
IRM(A)
18
V
R
= 400 V
T j
= 125° C
I
F
= 2 x I
F(AV)
16
14
I
F
= I
F(AV)
12
I
F
= 0.5 x I
F(AV)
10
I
F
= 0.25 x I
F(AV)
8
50 100 150 200 250 300 350 dIF/dt(A/µs)
400 450 500
700
Figure 5: Reverse recovery time versus dI
F
/dt
(typical values) tRR(ns)
V
R
= 400 V
T j
= 125 °C
600
500
400
300
200
100
0
0 20
I
F
= 2 x I
F(AV)
40 60
I
F
= I
F(AV)
80
I
F
= 0.5 x I
F(AV) dIF/dt(A/µs)
100 120 140 160 180 200
Figure 6: Reverse recovery charges versus dI
F
/ dt
(typical values)
QRR(nC)
500
450
V
R
T j
= 400 V
= 125 °C I
F
= 2 x I
F(AV)
400
350
300
250
200
150
100
50
0
0 20 40 60 80
I
F
= I
F(AV)
I
F
= 0.5 x I
F(AV) dIF/dt(A/µs)
100 120 140 160 180 200
DocID8322 Rev 4 3/11
Characteristics
2.0
Figure 7: Softness factor versus dIF/dt (typical values)
Sfactor
1.8
V
I
F
R
= I
F(AV)
= 400 V
T j
= 125 °C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 dI
F
/dt(A/µs)
140 160 180 200
5
4
3
7
6
2
1
0
0
10
Figure 9: Transient peak forward voltage versus dIF/dt (typical values)
VFP(V)
9
T j
I
F
= I
F(AV)
= 125 °C
8
20 40 60 80 100 120 140 dIF/dt(A/µs)
160 180 200
Figure 11: Thermal resistance junction to ambient versus copper surface under lead
(epoxy FR4, e
CU
= 35 μm) (SMB / SMC)
Rth(j-a)(C°/W)
100
90
80
70
60
50
40
30
20
10
0
0.0
0.5
1.0
SMB
1.5
SMC
2.0
2.5
3.0
SCu(cm²)
3.5
4.0
4.5
5.0
STTH3L06
Figure 8: Relative variations of dynamic parameters versus junction temperature
120
100
80
60
40
20
0
0
200
Figure 10: Forward recovery time versus dIF/dt
(typical values) tfr(ns)
180
160
I
F
= I
F(AV)
V
FR
T j
= 1.1 x V
= 125 °C
F max.
140
20 40 60 80 dlF/dt(A/µs)
100 120 140 160 180 200
90
80
70
60
50
40
30
20
10
0
5
Figure 12: Thermal resistance versus lead length
100
Rth(°C/W)
DO-201AD
10
R th(j-a)
R th(j-l)
15
Lleads(mm)
20 25
4/11 DocID8322 Rev 4
STTH3L06
2
2.1
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
Epoxy meets UL94, V0
Band indicated cathode (DO-201AD)
Bending method: see application note AN1471 (DO-201AD)
DO-201AD package information
Figure 13: DO-201AD package outline
Ref.
A
B
C
D
E
Table 7: DO-201AD package mechanical data
Dimensions
Millimeters Inches
Min. Max.
9.5
Min.
25.4 1.000
5.3
1.3
1.25
Max.
0.3740
0.2087
0.0512
0.0492
DocID8322 Rev 4 5/11
Package information
2.2 SMC package information
Figure 14: SMC package outline
STTH3L06
6/11
Ref.
D
E
E1
E2
A1
A2 b c
L
Min.
1.90
0.05
2.90
0.15
5.55
7.75
6.60
4.40
0.75
Table 8: SMC package mechanical data
Dimensions
Millimeters
Max.
2.45
0.20
3.20
0.40
6.25
8.15
7.15
4.70
1.50
Min.
0.0748
0.0020
0.1142
0.0059
0.2185
0.3051
0.2598
0.1732
0.0295
Inches
Max.
0.0965
0.0079
0.1260
0.0157
0.2461
0.3209
0.2815
0.1850
0.0591
DocID8322 Rev 4
STTH3L06
Figure 15: SMC recommended footprint
1.54
(0.061)
5.11
(0.201)
Package information
1.54
(0.061)
3.14
(0.124)
8.19
(0.323) millimeters
(inches)
DocID8322 Rev 4 7/11
Package information
2.3 SMB package information
Figure 16: SMB package outline
STTH3L06
8/11
Ref. c
D
E
A1
A2 b
E1
L
Min.
1.90
0.05
1.95
0.15
3.30
5.10
4.05
0.75
Table 9: SMB package mechanical data
Dimensions
Millimeters
Max.
2.45
0.20
2.20
0.40
3.95
5.60
4.60
1.50
Min.
0.0748
0.0020
0.0768
0.0059
0.1299
0.2008
0.1594
0.0295
Inches
Max.
0.0965
0.0079
0.0867
0.0157
0.1556
0.2205
0.1811
0.0591
DocID8322 Rev 4
STTH3L06
Figure 17: SMB recommended footprint
1.62
0.064
2.60
(0.102)
Package information
1.62
0.064
2.18
(0.086)
5.84
(0.230)
millimeters
(inches)
DocID8322 Rev 4 9/11
Ordering information
3 Ordering information
Order code
STTH3L06
STTH3L06-RL
STTH3L06U
STTH3L06S
Marking
Table 10: Ordering information
Package Weight Base qty.
STTH3L06 600
DO-201AD 1.12 g
STTH3L06
3L6U
S06
SMB
SMC
0.11 g
0.243 g
1900
2500
2500
STTH3L06
Delivery mode
Ammopack
Tape and reel
Tape and reel
Tape and reel
4 Revision history
Date Revision
Table 11: Document revision history
Changes
October-2001
07-Sep-2004
14-Oct-2005
29-Apr-2016
1
2
3
4
First issue
SMB, SMC and DPAK packages added.
Changed marking of STTH3L06U from 3L06U to 3L6U.
Added ECOPACK statement.
Removed DPAK package information.
Minor text changes
10/11 DocID8322 Rev 4
STTH3L06
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2016 STMicroelectronics
– All rights reserved
DocID8322 Rev 4 11/11
Download
Advertisement