STL36DN6F7
Dual Nchannel 60 V, 23 mΩ typ., 33 A STripFET™ F7
Power MOSFET in a PowerFLAT™ 5x6 double island package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code V
DS
R
DS(on)
max I
D
STL36DN6F7 60 V 27 mΩ 33 A
Among the lowest R
DS(on)
on the market
Excellent figure of merit (FoM)
Low C rss
/C iss
ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
This dual N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Order code
STL36DN6F7
Marking
36DN6F7
Table 1: Device summary
Package
PowerFLAT™ 5x6 double island
May 2017 DocID028259 Rev 3
This is information on a product in full production.
Packing
Tape and reel
1/15 www.st.com
Contents
Contents
STL36DN6F7
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 5
3 Test circuits ..................................................................................... 7
4 Package information ....................................................................... 8
4.1
4.2
PowerFLAT 5x6 double island type C package information .............. 9
Packing information ......................................................................... 12
5 Revision history ............................................................................ 14
2/15 DocID028259 Rev 3
STL36DN6F7
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
(1)
I
D
(1)
I
D
(2)
I
D
(2)
I
DM
(1)(3)
I
DM
(2)(3)
P
TOT
(1)
P
TOT
(2)
T
J
T stg
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (continuous) at T pcb
= 25 °C
Drain current (continuous) at T pcb
=100°C
Drain current (pulsed)
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Total dissipation at T pcb
= 25°C
Operating junction temperature range
Storage temperature range
Notes:
(1)
This value is rated according to R thj-c
.
(2)
The value is rated according to R thj-pcb
.
(3)
Pulse width limited by safe operating area.
Symbol
Table 3: Thermal data
Parameter
R thj-case
R
thj-pcb
(1)
Thermal resistance junction- case
Thermal resistance junction-pcb
Notes:
(1)
When mounted on FR-4 board of 1 inch
2
, 2oz Cu, t < 10 s.
Electrical ratings
Value
60
±20
33
23
9
6.7
132
36
58
4.8
-55 to 175
Unit
A
A
A
A
A
V
V
A
W
W
°C
Value
2.6
31.3
Unit
°C/W
°C/W
DocID028259 Rev 3 3/15
Electrical characteristics
2 Electrical characteristics
STL36DN6F7
(T
C
= 25 °C unless otherwise specified)
Symbol Parameter
Table 4: On /off states
Test conditions
V
(BR)DSS
R
I
DSS
DS(on)
Drain-source breakdown voltage
Zero gate voltage drain current
I
GSS
Gate-body leakage current
V
GS(th)
Gate threshold voltage
Static drain-source on-resistance
V
GS
= 0 V, I
D
= 1 mA
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 0 V ,V
GS
= 20 V
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= 10 V, I
D
= 4.5 A
Symbol
C iss
C oss
C rss
Q g
Q gs
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Q gd
Gate-drain charge
Table 5: Dynamic
Test conditions
V
V
V
DS
GS
DD
= 30 V, f = 1 MHz,
= 0 V
= 30 V, I
D
= 9 A
V
GS
= 0 to 10 V
(see Figure 14: "Test circuit for gate charge behavior" )
Symbol Parameter
Table 6: Switching times
Test conditions t d(on)
Turn-on delay time t r t d(off)
Turn-off delay time t f
Rise time
Fall time
V
DD
= 30 V, I
D
= 4.5 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 13: "Test circuit for resistive load switching times" and Figure 18:
"Switching time waveform" )
Symbol Parameter
V
SD
(1)
Forward on voltage t rr
Q rr
Reverse recovery time
Reverse recovery charge
I
RRM
Table 7: Source-drain diode
Test conditions
Reverse recovery current
I
SD
= 9 A, V
GS
= 0 V
I
D
= 9 A, di/dt = 100 A/µs
V
DD
= 48 V
(see Figure 15: "Test circuit for inductive load switching and diode recovery times" )
Min. Typ. Max. Unit
60
2
3.95
4
-
-
V
µA
100 nA
V
27 mΩ
Min. Typ. Max. Unit
-
-
-
-
-
420
215
16
8
2.3
-
-
-
-
- pF pF pF nC nC
-
Min. Typ. Max. Unit
-
-
-
-
23
2.1
7.85
3.25
12.1
1
-
-
- nC ns ns ns ns
Min. Typ. Max. Unit
-
-
-
17.1
6.67
1.2 V ns nC
- 0.8 A
Notes:
(1)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
4/15 DocID028259 Rev 3
STL36DN6F7
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
Electrical characteristics
Figure 3: Thermal impedance
Figure 4: Output characteristics Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
5/15 DocID028259 Rev 3
Electrical characteristics
Figure 8: Capacitance variations
STL36DN6F7
Figure 9: Normalized gate threshold voltage vs temperature
Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V
(BR)DSS
vs temperature
Figure 12: Source-drain diode forward characteristics
6/15 DocID028259 Rev 3
STL36DN6F7
3 Test circuits
Figure 13: Test circuit for resistive load switching times
Test circuits
Figure 14: Test circuit for gate charge behavior
Figure 15: Test circuit for inductive load switching and diode recovery times
Figure 16: Unclamped inductive load test circuit
Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform
DocID028259 Rev 3 7/15
Package information
4 Package information
STL36DN6F7
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
8/15 DocID028259 Rev 3
STL36DN6F7
4.1
Package information
PowerFLAT 5x6 double island type C package information
Figure 19
: PowerFLAT™ 5x6 double island type C package outline
DocID028259 Rev 3
8256945_DI_typeC_16
9/15
Package information
Dim.
Table 8: PowerFLAT™ 5x6 double island type C mechanical data
STL36DN6F7 mm
Min. Typ. Max.
D4
D5
D6
D7 e
E
E2
C
D
D2
D3
A
A1
A2 b
E3
E4
E5
E6
E7
E8
K
L
L1
θ
0.80
0.02
5.95
3.50
2.35
0.40
0.08
0.20
0.75
0.55
1.05
0.725
0.05
0°
0.30
5.80
5.00
4.15
4.05
4.80
0.25
0.15
1.68
0.25
6.00
5.20
4.20
5.00
0.40
0.30
1.27
6.15
0.325
0.90
0.15
0.60
0.28
0.45
1.05
1.00
0.05
0.50
6.20
5.40
4.45
4.35
5.20
0.55
0.45
1.98
6.35
3.70
2.55
0.75
1.35
1.025
0.25
12°
10/15 DocID028259 Rev 3
STL36DN6F7 Package information
Figure 20
: PowerFLAT™ 5x6 double island recommended footprint (dimensions are in mm)
8256945_DI_FP_smp_16
DocID028259 Rev 3 11/15
Package information
4.2 Packing information
Figure 21
: PowerFLAT™ 5x6 tape (dimensions are in mm)
STL36DN6F7
(I) Measured from centreline of sprocket hole
to centreline of pocket.
(II) Cumulative tolerance of 10 sprocket
holes is ±0.20.
(III) Measured from centreline of sprocket
hole to centreline of pocket
Base and bulk quantity 3000 pcs
All dimensions are in millimeters
Figure 22
: PowerFLAT™ 5x6 package orientation in carrier tape
8234350_ Tape_rev_C
12/15 DocID028259 Rev 3
STL36DN6F7
Figure 23
: PowerFLAT™ 5x6 reel
Package information
DocID028259 Rev 3 13/15
Revision history
5
STL36DN6F7
Revision history
Date Revision
Table 9: Document revision history
Changes
20-Aug-2015
22-Oct-2015
10-May-2017
1
2
3
First release.
Document status promoted from preliminary to production data.
Updated Section 2: "Electrical ratings" and Section 3: "Electrical characteristics".
Added Section 3.1: "Electrical characteristics (curves)" .
Modified title and features table on cover page.
Modified Table 2: "Absolute maximum ratings" , Table 3: "Thermal data" ,
Table 4: "On /off states"
Modified Figure 4: "Output characteristics" , Figure 5: "Transfer characteristics" , Figure 7: "Static drain-source on-resistance" and
Figure 12: "Source-drain diode forward characteristics" .
Minor text changes.
14/15 DocID028259 Rev 3
STL36DN6F7
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2017 STMicroelectronics
– All rights reserved
DocID028259 Rev 3 15/15
