STMicroelectronics VNQ9080AJ Datasheet
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VNQ9080AJ
Datasheet
Quad channel high-side driver with Current Sense analog feedback for automotive applications
PowerSSO-16
Product status link
VNQ9080AJ
Product summary
Order code VNQ9080AJTR
Package
Packing
PowerSSO-16
Tape and reel
Features
Description
Max transient supply voltage
Operating voltage range
Typ. on-state resistance (per Ch)
Current limitation (typ)
Standby current (max)
Parameter
V
CC
V
CC
R
ON
I
LIMH
I
STBY
Value
36 V
4 to 28 V
86 mΩ
13.6 A
0.5 µA
• AEC-Q100 qualified
• Extreme low voltage operation for deep cold cranking applications (compliant with LV124, revision 2013)
• General
– Quad channel smart high-side driver with current sense analog feedback
– Very low standby current
– Compatible with 3 V and 5 V CMOS outputs
• CurrentSense diagnostic functions
– Multiplexed analog feedback of: load current with high precision proportional current mirror
– Overload and short to ground (power limitation) indication
– Thermal shutdown indication
– OFF-state open-load detection (with external pull-up)
– Output short to V
CC
detection
– Sense enable/disable
• Protections
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Configurable latch-off on overtemperature or power limitation with dedicated fault reset pin
– Loss of ground and loss of V
CC
– Reverse battery with external components
– Electrostatic discharge protection
Applications
• Automotive resistive, inductive and capacitive loads
• Protected supply for ADAS systems: radars and sensors
• Automotive signal lamp: R10W and LEDs
DS12654 - Rev 5 - June 2022
For further information contact your local STMicroelectronics sales office.
www.st.com
VNQ9080AJ
Description
The device is a quad channel high-side driver manufactured using ST proprietary VIPower M0-9 technology and housed in PowerSSO-16 package. The device is designed to drive 12 V automotive grounded loads through a 3 V and 5 V CMOS-compatible interface, providing protection and diagnostics.
The device integrates advanced protective functions such as load current limitation, overload active management by power limitation and overtemperature shutdown with configurable latch-off.
A FaultRST pin unlatches the output in case of fault or disables the latch-off functionality.
A dedicated multifunction multiplexed analog output pin delivers diagnostic functions including high precision proportional load current sense, in addition to the detection of overload and short circuit to ground, short to V
CC and OFF-state open-load.
A sense enable pin allows OFF-state diagnosis to be disabled during the module low-power mode as well as external sense resistor sharing among similar devices.
DS12654 - Rev 5 page 2/44
1
VNQ9080AJ
Block diagram and pin description
Block diagram and pin description
Figure 1. Block diagram
VCC
IN0
IN1
IN2
IN3
SEn
SEL0
SEL1
FaultRST
V C C – G clamp
N D
Internal supply
Undervoltage shut- down
Channel 3
Channel 2
Channel 1
Channel 0 control & diagnostic
Gate driver
VCC– OUT
Clamp
Logic
Power limitation
Overtemperature
Open- Load in OFF
Current limitation
CH 0
CH 3
CH 2
CH 1
OUT3
OUT2
OUT1
CS
GND
Current
Sense
OUT0
Name
V
CC
OUTPUT
0,1,2,3
GND
INPUT
0,1,2,3
CS
SEn
SEL
0,1
FaultRST
Table 1. Pin functions
Function
Battery connection.
Power output
Ground connection; must be reverse battery protected by an external diode / resistor network.
Voltage controlled input pin with hysteresis, compatible with 3 V and 5 V CMOS outputs; controls output switch state.
analog current sense output pin; it delivers a current proportional to the selected load current.
Active high compatible with 3 V and 5 V CMOS outputs pin; enables the CS diagnostic pin.
Active high compatible with 3 V and 5 V CMOS outputs pin; it addresses the CS multiplexer.
Active low compatible with 3 V and 5 V CMOS outputs pin; it unlatches the output in case of fault - if kept low, sets the output to auto-restart mode.
DS12654 - Rev 5 page 3/44
VNQ9080AJ
Block diagram and pin description
Figure 2. Configuration diagram (top view)
OUTPUT0
SEn
INPUT0
GND
FaultRST
INPUT1
N.C.
OUTPUT1
1
2
3
4
5
6
7
8
PowerSSO-16
16
15
14
13
12
11
10
9
OUTPUT3
SEL1
INPUT3
CS
SEL0
INPUT2
N.C.
OUTPUT2
TAB = V
CC
GADG010318144RI
Connection/pin
Floating
To ground
1. X: do not care.
Table 2. Suggested connections for unused and not connected pins
CS
Not allowed
Through 1 kΩ resistor
NC Output
X
X Not allowed
Input
X
Through 15 kΩ resistor
SEn, SELx, FaultRST
X
Through 15 kΩ resistor
DS12654 - Rev 5 page 4/44
2
Note:
2.1
VNQ9080AJ
Electrical specification
Electrical specification
Figure 3. Current and voltage conventions
V
FR
V
SEn
V
SEL
V
IN
I
IN
I
FR
I
SEn
I
SEL
I
S
FaultRST
SE n
SEL 0,1
V
CC
OUTPUT
0,1,2,3
CS
I
OUT
I
SENSE
V
Fn
V
SENSE
V
OUT
V
CC
INPUT
0,1,2,3
I
GND
GADG2802181245RI
V
Fn
= V
OUTn
- V
CC
during reverse battery condition.
Absolute maximum ratings
Stressing the device above the rating listed in Table 3. Absolute maximum ratings
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to the conditions in the table below for extended periods may affect the device reliability.
Symbol
V
CC
-V
CC
V
CCJS
-I
GND
I
OUT
-I
OUT
I
IN
I
SEn
I
SEL0,1
I
FR
I
SENSE
E
MAX
V
ESD
Table 3. Absolute maximum ratings
Parameter
DC supply voltage
Reverse DC supply voltage
Maximum jump start voltage for single pulse short circuit protection
DC reverse ground pin current
OUTPUT
0,1,2,3
DC output current
Reverse DC output current
INPUT
0,1,2,3
DC input current
SEn DC input current
SEL
0,1
DC input current
FaultRST DC input current
CS pin DC output current (V
GND
= V
CC
and V
SENSE
< 0 V)
CS pin DC output current in reverse (V
CC
< 0 V)
Maximum switching energy (single pulse); T jstart
= 150 °C)
Electrostatic discharge (JEDEC 22A-114F)
INPUT
0,1,2,3
CS
SEn, SEL
0,1
, FaultRST
OUTPUT
0,1,2,3
V
CC
Value
36
0.3
28
200
Internally limited
2.2
-1 to 10
-1 to 3
-1 to 10
Unit mA
V
V mA
A
10
-20
4 mA mJ
2000
2000
2000
4000
4000
V
DS12654 - Rev 5 page 5/44
2.2
Symbol
V
ESD
T j
T stg
Parameter
Charge device model (CDM-AEC-Q100-011)
Junction operating temperature
Storage temperature
Thermal data
Table 4. Thermal data
Symbol
R thj-board
R thj-amb
R thj-amb
Parameter
Thermal resistance junction-board (JEDEC JESD 51-5 / 51-8)
Thermal resistance junction-ambient (JEDEC JESD 51-5)
Thermal resistance junction-ambient (JEDEC JESD 51-7)
1. One channel ON.
2. Device mounted on four-layer 2s2p PCB.
3. Device mounted on two-layer 2s0p PCB with 2 cm 2 heatsink copper trace.
VNQ9080AJ
Thermal data
Value
750
-40 to 150
-55 to 150
Unit
V
°C
Typ. value
9.5
54.5
22.5
Unit
°C/W
DS12654 - Rev 5 page 6/44
2.3
VNQ9080AJ
Main electrical characteristics
Main electrical characteristics
7 V < V
CC
< 28 V; -40 °C < T j
< 150 °C, unless otherwise specified.
All typical values refer to V
CC
= 13 V; T j
= 25 °C, unless otherwise specified.
Table 5. Power section
Symbol Parameter
V
CC
V
USD
Operating supply voltage
Undervoltage shutdown
V
USDReset
Undervoltage shutdown reset
V
USDhyst
Undervoltage shutdown hysteresis
Test conditions t
V
I
R
ON clamp
STBY
D_STBY
I
S(ON)
Clamp voltage
Supply current in standby at
V
CC
= 13 V
Standby mode blanking time
Supply current
I
OUT
= 0.7 A; T j
= 25 °C
I
OUT
= 0.7 A; T j
= 150 °C
I
OUT
= 0.7 A; V
CC
= 4 V; T j
= 25 °C
I
OUT
= 0.07 A; V
CC
= 2.7 V; V
CC
decreasing
I
S
= 20 mA; 25 °C < T j
< 150 °C
I
S
= 20 mA; T j
= -40 °C
V
CC
= 13 V;
V
IN0,1,2,3
V
SEL0,1
= V
OUT0,1,2,3
= 0 V; T j
= V
= 25 °C
FR
= V
SEn
= 0 V;
V
CC
= 13 V;
V
IN0,1,2,3
= V
OUT0,1,2,3
= V
FR
= V
SEn
= 0 V;
V
SEL0,1
= 0; T j
V
CC
= 13 V;
V
IN0,1,2,3
= V
OUT0,1,2,3
= V
FR
= V
SEn
= 0 V;
V
SEL0,1
= 0 V; T j
= 125 °C
V
CC
= 13 V; V
IN
= V
OUT
= V
FR
= V
SEL0,1
= 0 V;
V
SEn
= 5 V to 0 V
V
CC
= 13 V; V
SEn
= V
FR
= V
SEL0,1
= 0 V;
V
IN0,1,2,3
= 5 V; I
OUT0,1,2,3
= 0 A
I
GND(ON)
Control stage current consumption in ON state. All channels active.
V
CC
V
= 13 V; V
SEn
IN0,1,2,3
= 5 V; I
= 5 V; V
FR
= V
SEL0,1
OUT0,1,2,3
= 0.7 A;
= 0 V;
I
L(off)
Off-state output current at
V
CC
= 13 V
V
IN0,1,2,3
= V
OUT0,1,2,3
= 0 V; V
CC
= 13 V;
T j
= 25 °C
V
IN0,1,2,3
= V
OUT0,1,2,3
= 0 V; V
CC
= 13 V;
T j
= 125 °C
V
F
Output - V
CC
diode voltage at
T j
= 150 °C
I
OUT
= -0.7 A; T j
= 150 °C
1. For each channel.
2. Power MOSFET leakage included.
3. Parameter specified by design; not subject to production test.
Min.
Typ.
Max.
Unit
4 13 28 V
2.1
2.7
4.5
V
V
V 0.15
86
36
36
38
190
149
516
45 mΩ
V
V
0.5
0.5
µA
3
60 260 550 µs
5.5
7.5
mA
9 mA
0 0.01
0.5
0 3
0.7
µA
V
DS12654 - Rev 5 page 7/44
VNQ9080AJ
Main electrical characteristics
Table 6. Switching
Symbol t t t d(on)
d(off)
(dV
OUT
/dt) on
(dV
OUT
/dt) off
W
ON
W
OFF
SKEW
V
CC
= 13 V; -40 °C < T j
< 150 °C, unless otherwise specified
Parameter Test conditions Min.
Typ.
Turn-on delay time at T j
= 25 °C
Turn-off delay time at T j
= 25 °C
Turn-on voltage slope at T j
= 25 °C
Turn-off voltage slope at T j
= 25 °C
Switching energy losses at turn-on (t won
)
Switching energy losses at turn-off (t woff
)
Differential pulse skew (t
PHL
- t
PLH
)
R
L
= 18.6 Ω
1. See
Figure 4. Switching time and pulse skew .
2. Specified by design and evaluated by characterization, not tested in production.
10
10
0.2
0.2
-45
26
30
0.42
0.45
0.06
0.06
5
Max.
120
100
0.7
0.7
0.095
0.095
55
Unit
µs
V/µs mJ mJ
µs
DS12654 - Rev 5 page 8/44
DS12654 - Rev 5
VNQ9080AJ
Main electrical characteristics
Symbol
V
IL
I
IL
V
IH
I
IH
V
I(hyst)
V
ICL
V
SELL
I
SELL
V
SELH
I
SELH
V
SEL(hyst)
V
SELCL
V
SEnL
I
SEnL
V
SEnH
I
SEnH
V
SEn(hyst)
V
SEnCL
V
FRL
I
FRL
V
FRH
I
FRH
V
FR(hyst)
V
FRCL
Parameter
Table 7. Logic inputs
7 V < V
CC
< 28 V; -40 °C < T j
< 150 °C
Test conditions
INPUT
0,1,2,3
characteristics
Input low level voltage
Low level input current
Input high level voltage
High level input current
Input hysteresis voltage
V
V
IN
IN
= 0.9 V
= 2.1 V
Input clamp voltage
Input clamp voltage
I
IN
= 1 mA
I
IN
= -1 mA
FaultRST characteristics
Input low level voltage
Low level input current
Input high level voltage
High level input current
Input hysteresis voltage
V
V
IN
IN
= 0.9 V
= 2.1 V
Input clamp voltage
Input low level voltage
Low level input current
Input high level voltage
High level input current
Input hysteresis voltage
I
IN
= 1 mA
I
IN
= -1 mA
SEL
0,1
characteristics (7 V < V
CC
< 18 V)
V
V
IN
IN
= 0.9 V
= 2.1 V
Input clamp voltage
I
IN
= 1 mA
I
IN
= -1 mA
SEn characteristics (7 V < V
CC
< 18 V)
Input low level voltage
Low level input current
Input high level voltage
High level input current
Input hysteresis voltage
V
V
IN
IN
= 0.9 V
= 2.1 V
I
SEN
= 1 mA
I
SEN
= -1 mA
Min.
Typ.
Max.
Unit
1
2.1
0.2
6
0.9
10
8.5
-0.7
1
2.1
0.2
6
-0.7
0.9
10
8.5
V
µA
V
µA
V
V
V
µA
V
µA
V
V
1
2.1
0.2
6
-0.7
0.9
10
8.5
V
µA
V
µA
V
V
1
2.1
0.2
9
-0.7
0.9
10
12
V
µA
V
µA
V
V page 9/44
DS12654 - Rev 5
VNQ9080AJ
Main electrical characteristics
Table 8. Protections
Symbol Parameter
7 V < V
CC
< 18 V; -40 °C < T j
< 150 °C
Test conditions
I
I
LIMH
LIMH2
DC short- circuit current
V
CC
= 16 V; T j
= -40 °C
V
CC
= 16 V; T j
= 150 °C
V
CC
= 19 V; T j
= -40 °C
V
CC
= 19 V; T j
= 150 °C
V
CC
= 22 V; T j
= 25 °C I
LIMH at 22 V
T
TSD
Shutdown temperature
T
T
RS
HYST
Thermal reset of fault diagnostic indication
Thermal hysteresis
(T
TSD
- T
RS
V
FR
= 0 V; V
SEn
= 5 V t
ΔT
J_SD
LATCH_RST
Dynamic temperature
Fault reset time for output
V
CC
= 19 V
V
CC
= 16 V
V
FR
= 5 V to 0 V; V
SEn
= 5 V;
For example Ch
0
:
V
IN0
= 5 V; V
SEL0,1
= 0 V t
D_Restart
Latch-OFF delay time before automatic restart
T j
> 125 °C
V
DEMAG
Turn-off output voltage clamp
I
OUT
= 0.7 A; L = 6 mH; T j
= -40 °C
I
T
OUT
= 0.7 A; L = 6 mH; j
= 25 °C to 150 °C
1. I
LIMH
guaranteed between 7 V and 16 V, -40 °C < T j
< 150 °C.
2. I
LIMH2
guaranteed between 16 V and 19 V, -40 °C < T j
< 150 °C.
3. Specified by design and evaluated by characterization, not tested in production.
Min.
-15%
-15%
-15%
-15%
150
135
3
7
55
80
Typ.
14
10
11.2
8.9
4.2
175
10
Max.
15%
15%
15%
15%
Unit
A
210
20
°C
K
µs
50 75
V
CC
- 36
V
CC
- 36 V
CC
- 38 V
CC
- 45 V ms
V page 10/44
DS12654 - Rev 5
VNQ9080AJ
Main electrical characteristics
Table 9. Current Sense
I
V
Symbol
SENSE_CL dK
OL
V
K
/K
OL
OL
K
0 dK
0
/K
0
K
1 dK
1
/K
1
K
2 dK
2
/K
2
K
850 dK
850
/K
850
K
3 dK
3
/K
3
V
I
SENSE0
OUT_MSD
SENSE_SAT
SENSE_SAT
Parameter
7 V < V
CC
< 18 V; -40 °C < T j
< 150 °C
Test conditions
CurrentSense clamp voltage
V
SEn
= 0 V; I
SENSE
= 1 mA
V
SEn
= 0 V; I
SENSE
= -1 mA
CurrentSense characteristics
I
OUT
/I
SENSE
Current sense ratio drift at calibration point
I
OUT
/I
SENSE
I
OUT
= 0.01 A; V
SENSE
= 0.5 V; V
SEn
= 5 V
I
OUT
= 0.025 A; V
SENSE
= 0.5 V; V
SEn
= 5 V
CurrentSense ratio drift
I
OUT
/I
SENSE
CurrentSense ratio drift
I
OUT
/I
SENSE
CurrentSense ratio drift
I
I
OUT
OUT
= 0.15 A; V
SENSE
= 0.7 A; V
SENSE
= 0.5 V; V
SEn
= 3.5 V; V
SEn
= 5 V
= 5 V
I
OUT
/I
SENSE
CurrentSense ratio drift
I
OUT
/I
SENSE
CurrentSense ratio drift
I
I
OUT
OUT
= 0.85 A; V
SENSE
= 2.1 A; V
SENSE
= 3.5 V; V
SEn
= 3.5 V; V
SEn
= 5 V
= 5 V
CS disabled: V
SEn
= 0 V
CurrentSense leakage current
CS disabled: -1 V < V
SENSE
CS enabled: V
SEn
= 5 V; all channel ON;
I
OUTX
= 0 A; Ch
X
diagnostic selected;
For example Ch
0
:
V
IN0
= 5 V; V
IN1,2,3
= 5 V;
V
SEL0,1
= 0 V; I
OUT0
= 0 A;
I
OUT1,2,3
= 0.7 A
Output voltage for
CurrentSense shutdown
CurrentSense saturation voltage
CS saturation current
CS enabled: V
SEn
= 5 V; Ch
X
OFF;
I
OUTX
= 0 A; Ch
X
diagnostic selected;
For example Ch
0
:
V
IN0
= 0 V; V
IN1,2,3
= 5 V;
V
SEL0,1
= 0 V; I
OUT0
= 0 A; I
OUT1,2,3
= 0.7 A
V
SEn
= 5 V; R
SENSE
= 2.7 kΩ;
For example Ch
0
:
V
IN0
= 5 V; V
SEL0,1
= 0 V; I
OUT0
= 0.7 A
V
CC
= 7 V; R
SENSE
= 10 kΩ;
V
SEn
= 5 V; V
IN0
= 5 V;
V
SEL0,1
= 0 V; I
OUT0
= 6 A; T j
= -40 °C
V
CC
= 7 V; V
SENSE
= 3.5 V;
V
IN0
= 5 V; V
SEn
= 5 V;
V
SEL0,1
= 0 V; T j
= 150 °C
Min.
Typ.
Max.
Unit
-9 -8
7
-7
V
810
-25 25 %
-35% 1500 +35%
-25 25
-15% 1500 15%
-15 15
-7% 1500 7%
-7 7
-7% 1500 7%
-7 7
-5% 1500 5%
-5 5
0
-0.5
0.5
0.5
%
%
%
%
%
0
0
4.8
2
5
10
1
µA
V
V mA page 11/44
DS12654 - Rev 5
VNQ9080AJ
Main electrical characteristics
Symbol
I
OUT_SAT
t
V
I t t
I
V
OL
L(off2)
DSTKON
D_OL_V
D_VOL
SENSEH
SENSEH
Parameter
7 V < V
CC
< 18 V; -40 °C < T j
< 150 °C
Test conditions
Output saturation current
V
CC
= 7 V; V
SENSE
= 3.5 V;
V
IN0
= 5 V; V
SEn
= 5 V;
V
SEL0,1
= 0 V; T j
= 150 °C
OFF-state diagnostic
OFF-state open-load voltage detection threshold
V
SEn
= 5 V; C hX
OFF;
Ch
X
diagnostic selected;
For example Ch
0
:
V
IN0
= 0 V; V
SEL0,1
= 0 V;
OFF-state output sink current V
IN
= 0 V; V
OUT
= V
OL
; T j
= -40 °C to 125 °C
OFF-state diagnostic delay time from falling edge of
INPUT
(see
)
V
SEn
= 5 V; Ch
X
ON to OFF transition;
Ch
X
diagnostic selected;
For example Ch
0
:
V
IN0
= 5 V to 0 V; V
SEL0,1
= 0 V;
I
OUT0
= 0 A; V
OUT
= 4 V
Settling time for valid OFFstate open load diagnostic indication from rising edge of
SEn
V
V
IN0,1,2,3
SEn
= 0 V; V
= 0 V to 5 V
FR
= 0 V; V
OUT0
= 4 V;
OFF-state diagnostic delay time from rising edge of V
OUT
V
SEn
= 5 V; Ch
X
OFF;
Ch
X
diagnostic selected;
For example Ch
0
:
V
IN0
= 0 V; V
SEL0,1
= 0 V;
V
OUT0
= 0 V to 4 V
CurrentSense output voltage in fault condition
Fault diagnostic feedback (see
•
13 V < V
CC
< 18 V;
For example:
Ch
0
in open load; R
SENSE
= 0.7 kΩ;
V
IN0
= 0 V;
V
SEn
= 5 V; V
SEL0,1
= 0 V;
I
OUT0
= 0 A; V
OUT0
= 4 V
•
V
CC
= 7 V;
For example:
Ch
0
in open load; R
SENSE
= 0.7 kΩ;
V
IN0
= 0 V;
V
SEn
= 5 V; V
SEL0,1
= 0 V;
I
OUT0
= 0 A; V
OUT0
= 4 V
CurrentSense output current in fault condition
•
13 V < V
CC
< 18 V; V
SENSE
= 5 V
For example:
Ch
0
in open load; V
IN0
= 0 V;
V
SEn
= 5 V; V
SEL0,1
= 0 V;
I
OUT0
= 0 A; V
OUT0
= 4 V
Min.
Typ.
Max.
Unit
4
2
100
5
4.3
7
3
-150 -40
170
5
8.6
4
-5
250
60
30
7.5
12
A
V
µA
µs
µs
µs
V mA page 12/44
DS12654 - Rev 5
VNQ9080AJ
Main electrical characteristics t t t
Symbol
DSENSE1H
DSENSE1L
Parameter
7 V < V
CC
< 18 V; -40 °C < T j
< 150 °C
Test conditions
V
R
IN
L
= 5 V; V
= 18.6 Ω
SEn
= 0 V to 5 V; R
SENSE
= 1 kΩ;
Min.
Typ.
Max.
Unit
I
SENSEH
CurrentSense output current in fault condition
•
V
CC
= 7 V; V
SENSE
= 5 V;
For example:
Ch
0
in open load; V
IN0
= 0 V;
V
SEn
= 5 V; V
SEL0,1
= 0 V;
I
OUT0
= 0 A; V
OUT0
= 4 V
4.4
CurrentSense timings (current sense mode - see
Figure 5. Current Sense timings (current sense mode)
Current sense settling time from rising edge of SEn
Current sense disable delay time from falling edge of SEn
5
60
20 mA
µs
µs
DSENSE2H
Current sense settling time from rising edge of INPUT
V
IN
= 0 V to 5 V; V
SEn
= 5 V; R
SENSE
= 1 kΩ;
R
L
= 18.6 Ω
100 200 µs
Δt t t
DSENSE2H
DSENSE2L
DSENSE3H
Current sense settling time from rising edge of I
OUT
(dynamic response to a step change of I
OUT
)
Current sense turn-off delay time from falling edge of
INPUT
Current sense latch-OFF filtering time
V
IN
= 90 % of I
SENSEMAX
; R
L
V
R
IN
L
= 5 V; V
SEn
= 5 V; R
= 5 V to 0 V; V
= 18.6 Ω
SEn
SENSE
= 18.6 Ω
= 5 V; R
= 1 kΩ; I
SENSE
SENSE
= 1 kΩ;
1.4
70
2
100
250
2.6
µs
µs ms t t
D_XtoY
D_CStoVSENSEH
CurrentSense transition delay from Ch
X
to Ch
Y
CurrentSense transition delay from stable current sense on
Ch
X
to V
SENSEH on Ch
Y
CurrentSense timings (Multiplexer transition times) (3)
V
IN0
= 5 V; V
IN1
= 5 V; V
SEn
V to 5 V;
= 5 V; V
SEL0
= 0
I
OUT0
= 0 A; I
OUT1
= 0.7 A;
R
SENSE
= 1 kΩ
V
IN0
= 5 V; V
IN1
= 0 V; V
SEn
= 5 V; V
SEL0
= 0
V to 5 V;
I
OUT0
= 0.7 A; V
OUT1
= 4 V;
R
SENSE
= 1 kΩ
1. Parameter specified by design; not subject to production test.
2. All values refer to V
CC
= 13 V; T j
= 25 °C, unless otherwise specified.
3. Transition delay is measured up to ±10% of final conditions.
30
20
µs page 13/44
DS12654 - Rev 5
VNQ9080AJ
Main electrical characteristics
VOUT
Vcc
Figure 4. Switching time and pulse skew twon twoff dV
OUT
/dt
ON
80% Vcc
OFF dV
OUT
/dt
20% Vcc t
INPUT td(on) tpLH td(off) tpHL t
IN
SEn
High
Low
I
OUT
CURRENT SENSE
Figure 5. Current Sense timings (current sense mode) t
DSENSE2H t
DSENSE1L t
DSENSE1H t
DSENSE2L
GAPG1003141014CFT page 14/44
DS12654 - Rev 5
Figure 6. t
DSTKON
V
OUT
> V
OL
VNQ9080AJ
Main electrical characteristics
V
INPUT
V
OUT
MultiSense t
DSTKON
GAPG2609141140CFT
Table 10. Truth table
Mode
Standby
Normal
Overload
Undervoltage
All logic inputs low
Nominal load connected;
T j
Overload or short to GND causing:
T j
> T
TSD
or ΔT j
V
< 150 °C
CC
< V
USD
Conditions
> ΔT j _SD
(falling)
IN
X
L
FR SEn SEL
L L L
X
OUT
L
X
CS
Hi-Z
Comments
Low quiescent current consumption
L X L
H
H
L
H
H
H
Outputs configured for auto-restart
Outputs configured for
Latch-off
L X L
H
H
X
L
H
X X
See
X
H
L
L
L
Output cycles with temperature hysteresis
Hi-Z
Hi-Z
Output latches-off
Re-start when
V
CC
> V
USD
+
V
USDhyst
(rising)
OFF-state diagnostics
Short to V
CC
Open-load
L X
L X
Negative output voltage
Inductive loads turn-off
1. Refer to Table 11. Current sense multiplexer addressing
.
L X
See
See
H
H
External pull-up page 15/44
VNQ9080AJ
Main electrical characteristics
L X X
Table 11. Current sense multiplexer addressing
SEn SEL
1
SEL
0
MUX channel
Normal mode
CS output
Overload OFF-state diag.
Hi-Z
H
H
H
H
L
L
H
H
L
H
L
H
Channel 0 diagnostic
Channel 1 diagnostic
Channel 2 diagnostic
Channel 3 diagnostic
I
SENSE
= 1/K * I
OUT0
I
SENSE
= 1/K * I
OUT1
I
SENSE
= 1/K * I
OUT2
I
SENSE
= 1/K * I
OUT3
V
SENSE
= V
SENSEH
V
SENSE
= V
SENSEH
Negative output
Hi-Z
DS12654 - Rev 5 page 16/44
2.4
Waveforms
Figure 7. Latch-off mode - Intermittent short circuit
Normal condition
INPUT
Short circuit condition
Unlatch command is stored, but no restart until t
D_Restart is elapsed.
FaultRST
I
LIMH
I
OUT
I
NOM
CS
OTDIFF
(Internal signal)
OT
(Internal signal)
OT_Fault
(Internal signal)
OT_Fault_Diag
(Internal signal)
(*) Not in scale t
D_Restart t > t
DSENSE3H
I
OUT
CS
OTDIFF
(Internal signal)
OT
(Internal signal)
OT_Fault
(Internal signal)
OT_Fault_Diag
(Internal signal)
(*) Not in scale
Figure 8. Auto-restart mode - Intermittent short circuit
Short circuit condition Normal condition
INPUT
FaultRST
I
LIMH
Power Limitation
I
NOM t
D_Restart t > t
DSENSE3H
VNQ9080AJ
Waveforms
DS12654 - Rev 5 page 17/44
Figure 9. Auto-restart mode - Permanent short circuit
INPUT
FaultRST
I
OUT
CS
OTDIFF
(Internal signal)
OT
(Internal signal)
OT_Fault
(Internal signal)
OT_Fault_Diag
(Internal signal)
(*) Not in scale
I
LIMH
Power Limitation t
D_Restart
I
LIMH
Power Limitation t < t
DSENSE3H
Figure 10. Standby mode activation
VNQ9080AJ
Waveforms
DS12654 - Rev 5
Figure 11. Standby state diagram
Normal Operation t > t
D_STBY
INx = Low
AND
FaultRST = Low
AND
SEn = Low
AND
SELx = Low
Stand-by Mode
INx = High
OR
FaultRST = High
OR
SEn = High
OR
SELx = High
GADG2702181047RI page 18/44
VNQ9080AJ
Electrical characteristics (curves)
2.5
Electrical characteristics (curves)
I
Loff
(nA)
Figure 12. OFF-state output current
GADG300520221511OFFSI
120
Off state
V
CC
= 13 V
V
IN
= V
OUT
= 0 V
80
40
0
-50 0 50 100 150 T (°C)
I
GND(ON)
(mA)
6.5
Figure 14. I
GND(ON)
vs I out
GADG300520221516GNDon
V
CC
= 13 V
I
OUT
= 0.7 A
6.0
5.5
5.0
-50 0 50 100 150 T (°C)
Figure 16. Logic input low level voltage
V
IL
, V
(V)
FRL
, V
SELL
, V
SEnL GADG300520221521VIL
1.35
1.30
1.25
1.20
-50 0 50 100 150 T (°C)
I
STBY
(µA)
Figure 13. Standby current
GADG300520221512ISTBY
3
V
CC
= 13 V
2
1
0
-50 0 50 100 150 T (°C)
Figure 15. Logic input high level voltage
V
IH
, V
FRH
, V
SELH
, V
SEnH
(V)
GADG300520221518VIH
1.68
1.66
1.64
1.62
1.60
-50 0 50 100 150 T (°C)
Figure 17. High level logic input current
I
IH
, I
FRH
, I
SELH
, I
(µA)
SEnH GADG300520221522IIH
3.75
3.50
3.25
3.00
-50 0 50 100 150 T (°C)
DS12654 - Rev 5 page 19/44
Figure 18. Low level logic input current
I
IL
, I
FRL
, I
SELL
, I
SEnL
(µA)
GADG300520221523IIL
2.75
2.50
2.25
2.00
-50 0 50 100 150 T (°C)
Figure 20. FaultRST input clamp voltage
V
FRCL
(V)
GADG300520221526VFRCL
I
IN
= 1 mA
6
4
2
0
-2
-50 0
I
IN
= -1 mA
50 100 150 T (°C)
R
ON
(mΩ)
Figure 22. On-state resistance vs T
C
GADG300520221530RonT
140
V
CC
= 4 V
I
OUT
= 0.7 A
110
80
50
-50 0 50 100 150 T (°C)
VNQ9080AJ
Electrical characteristics (curves)
Figure 19. Logic input hysteresis voltage
V i(hyst)
, V
FR(hyst)
(V)
, V
SEL(hyst)
, V
SEn(hyst)
GADG300520221525VI
0.35
0.30
0.25
0.20
-50 0 50 100 150 T (°C)
V
USD
(V)
Figure 21. Undervoltage shutdown
GADG300520221527USD
2.5
110
80
50
0
2.0
1.5
1.0
-50 0 50 100 150 T (°C)
R
ON
(mΩ)
Figure 23. On-state resistance vs V
CC
GADG300520221531RonVcc
T = 150 °C
T = 125 °C
140
10
T = 25 °C
T = -40 °C
20 30 T (°C)
DS12654 - Rev 5 page 20/44
Figure 24. Turn-on voltage slope
(dVout/dt)
(V/µs)
On GADG300520221534dVdton
0.475
0.450
V
CC
= 13 V
R
L
= 18.6 Ω
0.425
0.400
-50 0 50 100 150 T (°C)
Figure 26. W
ON
vs T
C
GADG300520221537Won W
ON
(μJ)
0.6
0.4
0.2
0.0
-50 0 50 100 150 T (°C)
I
LIMH
(A)
14
13
12
11
10
-50
Figure 28. I
LIMH
vs T
C
GADG300520221541IlimH
0
V
CC
= 16 V
50 100 150 T (°C)
VNQ9080AJ
Electrical characteristics (curves)
Figure 25. Turn-off voltage slope
(dVout/dt)
Off
(V/µs)
GADG300520221535dVdtoff
0.45
V
CC
= 13 V
R
L
= 18.6 Ω
0.40
0.35
0.30
-50 0 50 100 150 T (°C)
Figure 27. W
OFF
vs T
C
GADG300520221539Woff W
OFF
(µJ)
0.6
0.4
0.2
0.0
-50 0 50 100 150 T (°C)
Figure 29. OFF-state open-load voltage detection threshold
V
OL
(V)
GADG300520221544VOL
2.75
2.50
2.25
2.00
-50 0 50 100 150 T (°C)
DS12654 - Rev 5 page 21/44
V
SENSE_CL
(V)
Figure 30. V
SENSE
clamp vs T
C
GADG300520221546SenCL
I
IN
= 1 mA
6
4
2
0
-2
-50 0
I
IN
= -1 mA
50 100 150 T (°C)
VNQ9080AJ
Electrical characteristics (curves)
V
SENSEH
(V)
5.75
Figure 31. V
SENSEH
vs T
C
GADG300520221548SenH
5.50
5.25
5.00
-50 0 50 100 150 T (°C)
DS12654 - Rev 5 page 22/44
3
3.1
3.2
3.3
3.4
VNQ9080AJ
Protections
Protections
Power limitation
The basic working principle of this protection consists of an indirect measurement of the junction temperature swing ΔT
J
through the direct measurement of the spatial temperature gradient on the device surface in order to automatically shut off the output MOSFET as soon as ΔT
J
exceeds the safety level of ΔT
J_SD
. According to the voltage level on the FaultRST pin, the output MOSFET switches on and cycles with a thermal hysteresis according to the maximum instantaneous power which can be handled (FaultRST = Low) or remains off
(FaultRST = High). The protection prevents fast thermal transient effects and, consequently, reduces thermomechanical fatigue.
Thermal shutdown
In case the junction temperature of the device exceeds the maximum allowed threshold (typically 175°C), it automatically switches off and the diagnostic indication is triggered. According to the voltage level on the
FaultRST pin, the device switches on again as soon as its junction temperature drops to T
R
(FaultRST = Low) or remains off (FaultRST = High).
Current limitation
The device is equipped with an output current limiter in order to protect the silicon as well as the other components of the system (e.g. bonding wires, wiring harness, connectors, loads, etc.) from excessive current flow. Consequently, in case of short circuit, overload or during load power-up, the output current is clamped to a safety level, I
LIMH
, by operating the output power MOSFET in the active region.
Negative voltage clamp
In case the device drives inductive load, the output voltage reaches a negative value during turn off. A negative voltage clamp structure limits the maximum negative voltage to a certain value, V
DEMAG
, allowing the inductor energy to be dissipated without damaging the device.
DS12654 - Rev 5 page 23/44
4
4.1
VNQ9080AJ
Application information
Application information
Figure 32. Application diagram
+5V
V
DD
OUT
OUT
OUT
OUT
ADC in
OUT
Rprot_SEn
SEn
INPUT
Rprot
Rprot
Rprot
FaultRST
SEL
Rprot
CS
Cext
Rsense
GND GND
Current mirror
Logic
R
GND
GND
GND
GND
GND protection network against reverse battery
Figure 33. Simplified internal structure
5V
Vcc
Rprot
INPUT
V
CC
D
GND
OUTPUT
GND GND
Dld
MCU
Rprot_SEn
SEn
Rprot
Rprot
FaultRST
CS
OUTPUT
Dld
Rsense
R
GND
GND
D
GND
GND
GAPGCFT00830
DS12654 - Rev 5 page 24/44
4.1.1
4.2
VNQ9080AJ
Immunity against transient electrical disturbances
Diode (DGND) in the ground line
A resistor (typ. R
GND
= 4.7 kΩ) should be inserted in parallel to D
GND
if the device drives an inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this case, the presence of the ground network produces a shift (≈600 mV) in the input threshold and in the status output values if the microprocessor ground is not common to the device ground. This shift does not vary if more than one HSD shares the same diode/resistor network.
Immunity against transient electrical disturbances
The immunity of the device against transient electrical emissions, conducted along the supply lines and injected into the V
CC
pin, is tested in accordance with ISO7637-2:2011 (E) and ISO 16750-2:2010.
The related function performance status classification is shown in
Table 12. ISO 7637-2 - electrical transient conduction along supply line
.
Test pulses are applied directly to DUT (device under test) both in ON and OFF-state and in accordance to ISO
7637-2:2011(E), chapter 4.
The DUT is intended as the current device only, with external components as shown in
Figure 34. M0-9 application schematic .
Status II is defined in ISO 7637-1 Function Performance Status Classification (FPSC) as follows: “The function does not perform as designed during the test but returns automatically to normal operation after the test”.
Table 12. ISO 7637-2 - electrical transient conduction along supply line
Test Pulse
2011(E)
Test pulse severity level with Status II functional performance status
1
2a
3a
3b
Level
III
III
IV
IV
IV
U
S
-112 V
+55 V
-220 V
+150 V
-7 V
Load dump according to ISO 16750-2:2010
Test B
35 V
Minimum number of pulses or test time
500 pulses
500 pulses
1h
1h
1 pulse
5 pulse
Burst cycle / pulse repetition time min
0.5 s
0.2 s
90 ms
90 ms
1 min max
5 s
100 ms
100 ms
1. U
S
is the peak amplitude as defined for each test pulse in ISO 7637-2:2011(E), chapter 5.6.
2. Test pulse from ISO 7637-2:2004(E).
3. With 35 V external suppressor referred to ground (-40°C < T j
< 150 °C).
Pulse duration and pulse generator internal impedance
2 ms, 10 Ω
50 µs, 2 Ω
0.1 µs, 50 Ω
0.1 µs, 50 Ω
100 ms, 0.01 Ω
400 ms, 2 Ω
DS12654 - Rev 5 page 25/44
Note:
VNQ9080AJ
Immunity against transient electrical disturbances
Figure 34. M0-9 application schematic
+5V
V
DD
OUT
V
CC
OUT
OUT
OUT
ADC in
OUT
Rprot_SEn
SEn
INPUT
Rprot
Rprot
Rprot
FaultRST
SEL
Rprot
CS
Cext
Rsense
GND GND
Current mirror
Logic
OUTPUT
R
GND
GND
D
GND
Rload_nom
GND GND
GND
GND
In case of multiple channels, each OUTPUT must be connected to the resistive nominal load.
1μF
DS12654 - Rev 5 page 26/44
4.3
4.4
VNQ9080AJ
MCU I/Os protection
MCU I/Os protection
If a ground protection network is used and negative transients are present on the V
CC be pulled negative. ST suggests to insert a resistor (R prot
line, the control pins will
) in line both to prevent the microcontroller I/O pins from latching-up and to protect the HSD inputs.
The value of these resistors is a compromise between the leakage current of microcontroller and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of microcontroller I/Os.
Equation
V
CCpeak
/I latchup
≤ R prot
≤ (V
OHµC
- V
IH
- V
GND
) / I
IHmax
Calculation example:
For V
CCpeak
= -150 V; I latchup
≥ 20 mA; V
OHµC
≥ 4.5 V
7.5 kΩ ≤ R prot
≤ 140 kΩ.
Recommended values: R prot
= 15 kΩ
A different value of the resistor has to be used for SEn pin, Rprot_SEn, as reported in
Figure 32. Application diagram .
CS - analog current sense
Diagnostic information on device and load status is provided by an analog output pin (CS) delivering the following signal:
• Current monitor: current mirror of channel output current
This signal is routed through an analog multiplexer which is configured and controlled by means of SELx and SEn pins, according to the address map in
Table 11. Current sense multiplexer addressing
.
Figure 35. Current Sense and diagnostic – block diagram
VCC
VCC – GND
Clamp
Internal Supply
Undervoltage shut-down
FaultRST
R
PROT
To µC ADC
INPUT
SEL
1
SEL
0
SE n
I
SENSE
CS
R
SENSE
GND
MUX
Fault
Diagnostic
CURRENT
MONITOR
Fault
V
SENSEH
Control & Diagnostic
Gate Driver
VCC – OUT
Clamp
Current
Limitation
Power Limitation
Overtemperature
Short to VCC
Open-Load in OFF K factor
Current
Sense
T
I
OUT
OUT
DS12654 - Rev 5 page 27/44
VNQ9080AJ
CS - analog current sense
4.4.1
Principle of Current Sense signal generation
Figure 36. Current Sense block diagram
Vcc
Sense MOS
INPUT
Main MOS
OUT
Current sense
Current sense Switch Block
Fault
To uC ADC
CS
R
PROT
R
SENSE
GAPG2307131200CFT
Current sense
The output is capable of providing:
• Current mirror proportional to the load current in normal operation, delivering current proportional to the load according to a known ratio named K
• Diagnostics flag in fault conditions delivering fixed voltage V
SENSEH
The current delivered by the current sense circuit, I
SENSE
, can be easily converted into a voltage V
SENSE
by using an external sense resistor, R
SENSE
, allowing continuous load monitoring and abnormal condition detection.
Normal operation (channel ON, no fault, SEn active)
While the device is operating in normal conditions (no fault intervention), V
SENSE
calculation can be done using simple equations
Current provided by CS output: I
SENSE
= I
OUT
/K
Voltage on R
SENSE
: V
SENSE
= R
SENSE
· I
SENSE
= R
SENSE
· I
OUT
/K
Where:
•
•
•
•
V
SENSE
is the voltage measurable on R
SENSE
resistor
I
SENSE
is the current provided from CS pin in current output mode
I
OUT
is the current flowing through output
K factor represents the ratio between PowerMOS cells and SenseMOS cells; its spread includes geometric factor spread, current sense amplifier offset and process parameters spread of the overall circuitry, specifying the ratio between I
OUT
and I
SENSE
.
Failure flag indication
In case of power limitation/overtemperature, the fault is indicated by the CS pin which is switched to a “current limited” voltage source, V
SENSEH
.
In any case, the current sourced by the CS in this condition is limited to I
SENSEH
.
DS12654 - Rev 5 page 28/44
VNQ9080AJ
CS - analog current sense
+5V
Microcontroller V
DD
GND
100nF
OUT
GND
GND
2.2 k
OUT
15k
OUT
15k
OUT
15k
ADC in
15k
OUT
GND
15k
CEXT
Figure 37. Analog HSD – open-load detection in off-state
Vbat
100nF/50V
GND
V
CC
SEn
INPUT
FaultRST
SEL
CS
GND
Rsense
Cu rrent mirror
Logic
R
GND
4.7k
GND
D
GND
GND
OUTPUT
Vbat
Rpull-up
External
Pull -Up switch
OUTPUT
10nF /100V
GND
GAPG1201151432CFT
Figure 38. Open-load / short to V
CC
condition
V
IN
V
SENSE
Open-load
V
SENSE
Short to V
CC t
DSTKON
V
SENSEH
V
SENSE
= 0
Pull-up connected
Pull-up disconnected
V
SENSEH
DS12654 - Rev 5 page 29/44
4.4.2
VNQ9080AJ
CS - analog current sense
Open-load
Short to V
CC
Nominal
Condition
Table 13. Current Sense pin levels in off-state
Output
V
OUT
> V
OL
V
OUT
< V
OL
V
OUT
> V
OL
V
OUT
< V
OL
Hi-Z
V
SENSEH
Hi-Z
0
Hi-Z
V
SENSEH
Hi-Z
0
CS
L
H
L
L
H
H
L
H
SEn
Short to V
CC
and OFF-state open-load detection
Short to V
CC
A short circuit between V
CC and output is indicated by the relevant current sense pin set to V
SENSEH
during the device off-state. Small or no current is delivered by the current sense during the on-state depending on the nature of the short-circuit.
OFF-state open-load with external circuitry
Detection of an open-load in off mode requires an external pull-up resistor R
PU
connecting the output to a positive supply voltage V
PU
.
It is preferable that V
PU
is switched off during the module standby mode in order to avoid the overall standby current consumption to increase in normal conditions, that is when load is connected.
R
PU must be selected in order to ensure V
OUT
> V
OLmax in accordance with the following equation:
R
PU
<
V
PU
- 4
I
L(off2)min @ 4V
DS12654 - Rev 5 page 30/44
5
VNQ9080AJ
Maximum demagnetization energy (Vcc = 16 V)
Maximum demagnetization energy (Vcc = 16 V)
Figure 39. Maximum turn off current versus inductance
10.00
VNQ9080AJ - Single Pulse
Repetitive pulse Tjstart=100°C
Repetitive pulse Tjstart=125°C
1.00
0.10
0.1
L (mH) 1 10 100
Figure 40. Maximum turn off energy versus inductance
100.00
VNQ9080AJ - Single Pulse
Repetitive pulse Tjstart=100°C
Repetitive pulse Tjstart=125°C
10.00
1000
Note:
1.00
0.1
L (mH)
1 10 100 1000
Values are generated with R
L
= 0 Ω.
In case of repetitive pulses, T jstart
(at the beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves A and B.
DS12654 - Rev 5 page 31/44
6
6.1
VNQ9080AJ
Package and PCB thermal data
Package and PCB thermal data
PowerSSO-16 thermal data
Figure 41. PowerSSO-16 on two-layer PCB (2s0p to JEDEC JESD 51-5)
Figure 42. PowerSSO-16 on four-layer PCB (2s2p to JEDEC JESD 51-7)
DS12654 - Rev 5
Dimension
Board finish thickness
Board dimension
Board Material
Copper thickness (top and bottom layers)
Copper thickness (inner layers)
Thermal vias separation
Thermal via diameter
Copper thickness on vias
Footprint dimension (top layer)
Heatsink copper area dimension (bottom layer)
Table 14. PCB properties
Value
1.6 mm ±10%
77 mm x 86 mm
FR4
0.070 mm
0.035 mm
1.2 mm
0.3 mm ±0.08 mm
0.025 mm
2.2 mm x 3.9 mm
Footprint, 2 cm 2 or 8 cm 2 page 32/44
DS12654 - Rev 5
VNQ9080AJ
PowerSSO-16 thermal data
70
60
50
Figure 43. R thj-amb
vs PCB copper area in open box free air condition (one channel on)
R thj-amb
90
R thj-amb
80
R
TH_J PCB
= 9.5° C/W
40
30
0 2 4 6
PCB Cu heatsink area (cm2 )
8 10
Figure 44. PowerSSO-16 thermal impedance junction ambient single pulse (one channel on)
100
Z
TH_JA
(°C/W)
10
1
0.0001
0.001
0.01
0.1
Time (s)
1
Equation: pulse calculation formula
Z
THδ
= R
TH
· δ + Z
THtp
(1 - δ) where δ = t
P
/T
10
Cu=foot print
Cu=2 cm2
Cu=8 cm2
4 Layer
100 1000 page 33/44
VNQ9080AJ
PowerSSO-16 thermal data
Figure 45. Thermal fitting model of a double-channel HSD in PowerSSO-16
Note: The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded protections
(power limitation or thermal cycling during thermal shutdown) are not triggered.
Table 15. Thermal parameters
Area/island (cm 2 )
R1 = R7 = R9 = R11 (°C/W)
R2 = R8 = R10 = R12 (°C/W)
R3 (°C/W)
R4 (°C/W)
R5 (°C/W)
R6 (°C/W)
C1 = C7 = C9 = C11 (W·s/°C)
C2 = C8 = C10 =C12 (W·s/°C)
C3 (W·s/°C)
C4 (W·s/°C)
C5 (W·s/°C)
C6 (W·s/°C)
FP
2
2.5
6
8.5
33
29
0.00008
0.0008
0.08
0.004
0.4
3
2
19
18
-
-
-
-
-
5.5
7.5
0.004
0.5
5
8
9
18
-
-
-
5.5
7.5
-
-
0.004
0.7
7
4L
0.004
3.5
18
3
6
-
-
-
5
6
-
-
DS12654 - Rev 5 page 34/44
7
7.1
VNQ9080AJ
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
PowerSSO-16 package information
Bottom view
Figure 46. PowerSSO-16 package dimensions ggg C A-B D D2
D3 ggg C A-B D minimum solderable area
E3 E2
Section A-A
θ 2 h
A A2
A1 e for dual gauge only eee C b ddd C D
N
A
D
A ccc C
SEATING PLANE
C
2x f f f C A-B
D
θ 3
Section B-B
b
H
S h
B
θ 1
R1
R
GAUGE PLANE
θ
L1
B
L
WITH PLATING
1.2
for dual gauge only c c1
E1 E index area
(0.25D x 0.75E1)
2x aaa C D
Top view
1 2 3
B
8017965_Rev_9
A N/2
2x N/2 TIPS bbb C b1
BASE METAL
GAPG1605141159CFT
DS12654 - Rev 5 page 35/44
DS12654 - Rev 5
Symbol
E2
E3 h
L
L1
N
R
R1
S c1
D
D2
D3 e
E
E1
A
A1
A2 b b1 c
Θ
Θ1
Θ2
Θ3 aaa bbb ccc ddd eee fff ggg
Table 16. PowerSSO-16 mechanical data
Millimeters
Typ.
Min.
0°
0°
5°
5°
0.00
1.10
0.20
0.20
0.19
0.19
0.25
0.20
4.90 BSC
3.31
2.61
0.50 BSC
6.00 BSC
3.90 BSC
2.20
1.49
0.25
0.40
0.60
1.00 REF
16
0.07
0.07
0.20
Tolerance of form and position
0.10
0.10
0.08
0.08
0.10
0.10
0.15
VNQ9080AJ
PowerSSO-16 package information
2.80
0.50
0.85
Max.
8°
1.60
0.30
0.28
0.25
0.23
15°
15°
1.70
0.10
3.91
page 36/44
7.2
VNQ9080AJ
PowerSSO-16 packing information
PowerSSO-16 packing information
Figure 47. PowerSSO-16 reel 13"
Access Hole at
Slot Location
( 40 mm min.)
A D
Description
Base quantity
Bulk quantity
A (max)
B (min)
C (+0.5, -0.2)
D (min)
N
W1 (+2 /-0)
W2 (max)
1. All dimensions are in mm.
C
If present, tape slot in core for tape start:
2.5 mm min. width x
10.0 mm min. depth
B
Table 17. Reel dimensions
Value
2500
2500
330
1.5
13
20.2
100
12.4
18.4
W2
W1
N
TAPG2004151655CFT
DS12654 - Rev 5 page 37/44
DS12654 - Rev 5
VNQ9080AJ
PowerSSO-16 packing information
0.30 ±0.05
Figure 48. PowerSSO-16 carrier tape
P
2
2.0 ±0.1
P
0
4.0 ±0.1
1.55 ±0.05
X
1.75 ±0.1
1.6 ±0.1
F
W
B
0
K
1
K
0
SECTION X - X
R 0.5
Typical
Y
X
Y
P
1
REF 4.18
REF 0.6
SECTION Y - Y
REF 0.5
A
0
GAPG2204151242CFT
Table 18. PowerSSO-16 carrier tape dimensions
Description
A
0
B
0
K
0
K
1
F
P
1
W
1. All dimensions are in mm.
Value
6.50 ± 0.1
5.25 ± 0.1
2.10 ± 0.1
1.80 ± 0.1
5.50 ± 0.1
8.00 ± 0.1
12.00 ± 0.3
Figure 49. PowerSSO-16 schematic drawing of leader and trailer tape
Embossed carrier
Punched carrier
8 mm & 12 mm only
END
Carrier tape
Round sprocket holes
START
Top cover tape
Elongated sprocket holes
(32 mm tape and wider)
Trailer
160 mm minimum
Top cover tape
Components
User direction feed
100 mm min.
Leader
400 mm minimum
GAPG2004151511CFT page 38/44
7.3
PowerSSO-16 marking information
Figure 50. PowerSSO-16 marking information
VNQ9080AJ
PowerSSO-16 marking information
Special function digit
&: Engineering sample
<blank>: Commercial sample
PowerSSO-16 TOP VIEW
(not to scale)
GADG0310161234SMD
Parts marked as ‘&’ are not yet qualified and therefore not approved for use in production. ST is not responsible for any consequences resulting from such use. In no event will ST be liable for the customer using any of these engineering samples in production. ST’s Quality department must be contacted prior to any decision to use these engineering samples to run a qualification activity.
DS12654 - Rev 5 page 39/44
VNQ9080AJ
Revision history
Date
11-Sep-2018
24-Sep-2020
17-Sep-2021
26-Jan-2022
16-Jun-2022
Revision
1
2
3
4
5
Table 19. Document revision history
Changes
Initial release.
Updated cover page, Figure 1. Block diagram , Table 3. Absolute maximum ratings.
Updated Main electrical characteristics, Section 2.4 Waveforms and Section 3 Protections .
Added Application information .
•
•
Added:
Section 5 Maximum demagnetization energy (Vcc = 16 V) ;
Section 6 Package and PCB thermal data .
•
•
•
•
•
•
Updated:
Figure 12. Application diagram;
Figure 16. Analog HSD – open-load detection in off-state;
Table 4. Thermal data;
Table 6. Switching;
Table 9. Current Sense;
Section 7.1 PowerSSO-16 package information.
•
•
Minor text changes in:
Table 3. Absolute maximum ratings;
Table 5. Power section.
Updated features list in cover page.
Updated Table 8. Protections and Table 9. Current Sense .
Updated Figure 12. Application diagram , Figure 13. Simplified internal structure , Section 4.2
Immunity against transient electrical disturbances and Section 4.3 MCU I/Os protection .
Added
Section 2.5 Electrical characteristics (curves) .
Minor text changes.
DS12654 - Rev 5 page 40/44
VNQ9080AJ
Contents
Contents
and OFF-state open-load detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
DS12654 - Rev 5 page 41/44
VNQ9080AJ
List of tables
List of tables
DS12654 - Rev 5 page 42/44
VNQ9080AJ
List of figures
List of figures
Figure 22. On-state resistance vs T
Figure 23. On-state resistance vs V
Figure 38. Open-load / short to V
DS12654 - Rev 5 page 43/44
VNQ9080AJ
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DS12654 - Rev 5 page 44/44
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