Electrical characteristics STGD6NC60HD
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
Static
Parameter Test conditions Min.
Typ.
Max.
Unit
V
BR(CES)
Collector-emitter breakdown voltage
V
V
I
CE(sat)
I
GE(th)
CES
GES g fs
I
C
= 1mA, V
GE
= 0
Collector-emitter saturation voltage
V
GE
= 15V, I
C
= 3A
V
GE
= 15V, I
C
= 3A, Tc= 125°C
Gate threshold voltage
Collector cut-off current
(V
GE
= 0)
V
CE
= V
GE
, I
C
= 250 µA
V
CE
= Max rating,T
C
= 25°C
V
CE
=Max rating,T
C
= 125°C
Gate-emitter leakage current (V
CE
= 0)
V
GE
= ±20V, V
CE
= 0
Forward transconductance V
CE
= 15V
,
I
C
= 3A
600
3.75
1.9
1.7
3
2.5
5.75
10
1
±100
V
V
V
V
µA mA nA
S
Table 4.
Symbol
C ies
C oes
C res
Q g
Q ge
Q gc
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
I
CL
Turn-off SOA minimum current
Test conditions
V
CE
= 25V, f = 1MHz,
V
GE
= 0
V
CE
= 390V, I
C
= 3A,
V
GE
= 15V,
(see Figure 17)
V clamp
=390V, Tj=150°C,
R
G
=10 Ω , V
GE
=15V
Min.
Typ.
Max.
Unit
205
32
5.5
pF pF pF
13.6
3.4
5.1
nC nC nC
19 A
Obsolete Product(s) - Obsolete Product(s)
4/15
STGD6NC60HD Electrical characteristics
Table 5.
Symbol t d(on) t r
(di/dt) on
Turn-on delay time
Current rise time
Turn-on current slope t r
(V off
) t d
( off
) t f t r
(V off
) t d
( off
) t f
Switching on/off (inductive load)
Parameter Test conditions t d(on) t r
(di/dt) on
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
V
CC
= 390V, I
C
= 3A
R
G
= 10 Ω , V
GE
= 15V,
Tj= 25°C
(see Figure 18)
V
CC
= 390V, I
C
= 3A
R
G
= 10 Ω , V
GE
= 15V,
Tj=125°C
(see Figure 18)
V
CC
= 390V, I
C
= 3A,
R
GE
= 10 Ω , V
GE
=
15V,T
J
=25°C
(see Figure 18)
V
CC
= 390V, I
C
= 3A,
R
GE
=10 Ω , V
GE
=15V,
Tj=125°C
(see Figure 18)
Min.
Typ.
Max.
Unit
12
5
612 ns ns
A/µs
13
4.3
560
40
76
100 ns ns
A/µs ns ns ns
60
98
124 ns ns ns
Table 6.
Symbol
Switching energy (inductive load)
Parameter Test conditions Min.
Typ.
Max.
Unit
E on
(1)
E off
(2)
E ts
E on
(1)
E off
(2)
E ts
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
= 390V, I
C
= 3A
R
G
= 10 Ω , V
GE
=15V,
Tj=25°C
(see Figure 18)
V
CC
= 390V, I
C
= 3A
R
G
= 10 Ω , V
GE
= 15V,
Tj= 125°C
(see Figure 18)
20
68
88
37
93
130
1.
Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C)
2.
Turn-off losses include also the tail of the collector current Obsolete Product(s) - Obsolete Product(s)
µJ
µJ
µJ
µJ
µJ
µJ
5/15
Electrical characteristics STGD6NC60HD
Table 7.
Symbol
V f t rr
Q rr
I rrm t rr
Q rr
I rrm
Collector-emitter diode
Parameter
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
I f
= 1.5A
I f
= 1.5A, Tj = 125°C
I f
= 3A,V
R
= 40V,
Tj = 25°C, di/dt = 100 A/ µ s
(see Figure 19)
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I f
= 3A,V
R
= 40V,
Tj =125°C, di/dt = 100A/ µ s
(see Figure 19)
Min.
Typ.
Max.
Unit
1.6
1.3
2.1
V
V
21
14
1.36
ns nC
A
34
32
1.88
ns nC
A
Obsolete Product(s) - Obsolete Product(s)
6/15
