datasheet for ATmega8 by Atmel


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datasheet for ATmega8 by Atmel | Manualzz

ATmega8(L)

AVR ATmega8

Memories

This section describes the different memories in the Atmel

®

AVR

®

ATmega8. The AVR architecture has two main memory spaces, the Data memory and the Program Memory space. In addition, the ATmega8 features an EEPROM Memory for data storage. All three memory spaces are linear and regular.

In-System

Reprogrammable

Flash Program

Memory

The ATmega8 contains 8Kbytes On-chip In-System Reprogrammable Flash memory for program storage. Since all AVR instructions are 16-bits or 32-bits wide, the Flash is organized as

4K × 16 bits. For software security, the Flash Program memory space is divided into two sections, Boot Program section and Application Program section.

The Flash memory has an endurance of at least 10,000 write/erase cycles. The ATmega8 Program Counter (PC) is 12 bits wide, thus addressing the 4K Program memory locations. The operation of Boot Program section and associated Boot Lock Bits for software protection are described in detail in

“Boot Loader Support – Read-While-Write Self-Programming” on page

202

.

“Memory Programming” on page 215 contains a detailed description on Flash Program-

ming in SPI- or Parallel Programming mode.

Constant tables can be allocated within the entire Program memory address space (see the

LPM – Load Program memory instruction description).

Timing diagrams for instruction fetch and execution are presented in

“Instruction Execution Timing” on page 13 .

Figure 7. Program Memory Map

$000

Application Flash Section

Boot Flash Section

$FFF

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SRAM Data

Memory

Figure 8

shows how the Atmel

®

AVR

®

SRAM Memory is organized.

The lower 1120 Data memory locations address the Register File, the I/O Memory, and the internal data SRAM. The first 96 locations address the Register File and I/O Memory, and the next

1024 locations address the internal data SRAM.

The five different addressing modes for the Data memory cover: Direct, Indirect with Displacement, Indirect, Indirect with Pre-decrement, and Indirect with Post-increment. In the Register

File, registers R26 to R31 feature the indirect addressing pointer registers.

The direct addressing reaches the entire data space.

The Indirect with Displacement mode reaches 63 address locations from the base address given by the Y-register or Z-register.

When using register indirect addressing modes with automatic pre-decrement and post-increment, the address registers X, Y and Z are decremented or incremented.

The 32 general purpose working registers, 64 I/O Registers, and the 1024 bytes of internal data

SRAM in the ATmega8 are all accessible through all these addressing modes. The Register File

is described in “General Purpose Register File” on page 12

.

Figure 8. Data Memory Map

Register File

R0

R1

R2

...

Data Address Space

$0000

$0001

$0002

...

R29

R30

R31

I/O Registers

$00

$01

$02

...

$3D

$3E

$3F

$001D

$001E

$001F

$0020

$0021

$0022

...

$005D

$005E

$005F

Internal SRAM

$0060

$0061

...

$045E

$045F

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Data Memory

Access Times

ATmega8(L)

This section describes the general access timing concepts for internal memory access. The internal data SRAM access is performed in two clk

CPU

cycles as described in

Figure 9 .

Figure 9. On-chip Data SRAM Access Cycles

T1 T2 T3 clk

CPU

Address

Data

WR

Data

RD

Compute Address

Address Valid

Memory Vccess Instruction Next Instruction

EEPROM Data

Memory

EEPROM Read/Write

Access

The ATmega8 contains 512bytes of data EEPROM memory. It is organized as a separate data space, in which single bytes can be read and written. The EEPROM has an endurance of at least 100,000 write/erase cycles. The access between the EEPROM and the CPU is described below, specifying the EEPROM Address Registers, the EEPROM Data Register, and the

EEPROM Control Register.

“Memory Programming” on page 215 contains a detailed description on EEPROM Programming

in SPI- or Parallel Programming mode.

The EEPROM Access Registers are accessible in the I/O space.

The write access time for the EEPROM is given in Table 1 on page 21

. A self-timing function, however, lets the user software detect when the next byte can be written. If the user code contains instructions that write the EEPROM, some precautions must be taken. In heavily filtered power supplies, V

CC

is likely to rise or fall slowly on Power-up/down. This causes the device for some period of time to run at a voltage lower than specified as minimum for the clock frequency

used. See “Preventing EEPROM Corruption” on page 23.

for details on how to avoid problems in

these situations.

In order to prevent unintentional EEPROM writes, a specific write procedure must be followed.

Refer to “The EEPROM Control Register – EECR” on page 20 for details on this.

When the EEPROM is read, the CPU is halted for four clock cycles before the next instruction is executed. When the EEPROM is written, the CPU is halted for two clock cycles before the next instruction is executed.

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The EEPROM Address

Register – EEARH and

EEARL

Bit

Read/Write

Initial Value

15

EEAR7

7

R

R/W

0

X

14

EEAR6

6

R

R/W

0

X

13

EEAR5

5

R

R/W

0

X

12

EEAR4

4

R

R/W

0

X

11

EEAR3

3

R

R/W

0

X

10

EEAR2

2

R

R/W

0

X

9

EEAR1

1

R

R/W

0

X

8

EEAR8

EEAR0

0

R/W

R/W

X

X

EEARH

EEARL

• Bits 15..9 – Res: Reserved Bits

These bits are reserved bits in the ATmega8 and will always read as zero.

• Bits 8..0 – EEAR8..0: EEPROM Address

The EEPROM Address Registers – EEARH and EEARL – specify the EEPROM address in the

512bytes EEPROM space. The EEPROM data bytes are addressed linearly between 0 and 511.

The initial value of EEAR is undefined. A proper value must be written before the EEPROM may be accessed.

The EEPROM Data

Register – EEDR

Bit

Read/Write

Initial Value

7

MSB

R/W

0

6

R/W

0

5

R/W

0

4

R/W

0

3

R/W

0

2

R/W

0

1

R/W

0

0

LSB

R/W

0

EEDR

• Bits 7..0 – EEDR7..0: EEPROM Data

For the EEPROM write operation, the EEDR Register contains the data to be written to the

EEPROM in the address given by the EEAR Register. For the EEPROM read operation, the

EEDR contains the data read out from the EEPROM at the address given by EEAR.

The EEPROM Control

Register – EECR

Bit

Read/Write

Initial Value

R

0

7

R

0

6

R

0

5

R

0

4

3

EERIE

R/W

0

2

EEMWE

R/W

0

1

EEWE

R/W

X

0

EERE

R/W

0

EECR

• Bits 7..4 – Res: Reserved Bits

These bits are reserved bits in the Atmel

®

AVR

®

ATmega8 and will always read as zero.

• Bit 3 – EERIE: EEPROM Ready Interrupt Enable

Writing EERIE to one enables the EEPROM Ready Interrupt if the I bit in SREG is set. Writing

EERIE to zero disables the interrupt. The EEPROM Ready interrupt generates a constant interrupt when EEWE is cleared.

• Bit 2 – EEMWE: EEPROM Master Write Enable

The EEMWE bit determines whether setting EEWE to one causes the EEPROM to be written.

When EEMWE is set, setting EEWE within four clock cycles will write data to the EEPROM at the selected address If EEMWE is zero, setting EEWE will have no effect. When EEMWE has been written to one by software, hardware clears the bit to zero after four clock cycles. See the description of the

“Bit 1 – EEWE: EEPROM Write Enable”

for an EEPROM write procedure.

• Bit 1 – EEWE: EEPROM Write Enable

The EEPROM Write Enable Signal EEWE is the write strobe to the EEPROM. When address and data are correctly set up, the EEWE bit must be written to one to write the value into the

EEPROM. The EEMWE bit must be written to one before a logical one is written to EEWE, oth-

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ATmega8(L)

erwise no EEPROM write takes place. The following procedure should be followed when writing the EEPROM (the order of steps 3 and 4 is not essential):

1.

Wait until EEWE becomes zero

2.

Wait until SPMEN in SPMCR becomes zero

3.

Write new EEPROM address to EEAR (optional)

4.

Write new EEPROM data to EEDR (optional)

5.

Write a logical one to the EEMWE bit while writing a zero to EEWE in EECR

6.

Within four clock cycles after setting EEMWE, write a logical one to EEWE

The EEPROM can not be programmed during a CPU write to the Flash memory. The software must check that the Flash programming is completed before initiating a new EEPROM write.

Step 2 is only relevant if the software contains a boot loader allowing the CPU to program the

Flash. If the Flash is never being updated by the CPU, step 2 can be omitted. See “Boot Loader

Support – Read-While-Write Self-Programming” on page 202 for details about boot

programming.

Caution: An interrupt between step 5 and step 6 will make the write cycle fail, since the

EEPROM Master Write Enable will time-out. If an interrupt routine accessing the EEPROM is interrupting another EEPROM access, the EEAR or EEDR Register will be modified, causing the interrupted EEPROM access to fail. It is recommended to have the Global Interrupt Flag cleared during all the steps to avoid these problems.

When the write access time has elapsed, the EEWE bit is cleared by hardware. The user software can poll this bit and wait for a zero before writing the next byte. When EEWE has been set, the CPU is halted for two cycles before the next instruction is executed.

• Bit 0 – EERE: EEPROM Read Enable

The EEPROM Read Enable Signal EERE is the read strobe to the EEPROM. When the correct address is set up in the EEAR Register, the EERE bit must be written to a logic one to trigger the

EEPROM read. The EEPROM read access takes one instruction, and the requested data is available immediately. When the EEPROM is read, the CPU is halted for four cycles before the next instruction is executed.

The user should poll the EEWE bit before starting the read operation. If a write operation is in progress, it is neither possible to read the EEPROM, nor to change the EEAR Register.

The calibrated Oscillator is used to time the EEPROM accesses.

Table 1

lists the typical programming time for EEPROM access from the CPU.

Table 1. EEPROM Programming Time

Symbol

Number of Calibrated RC

Oscillator Cycles

(1)

EEPROM Write (from CPU) 8448

Note: 1. Uses 1MHz clock, independent of CKSEL Fuse settings

Typ Programming Time

8.5ms

21

The following code examples show one assembly and one C function for writing to the

EEPROM. The examples assume that interrupts are controlled (for example by disabling interrupts globally) so that no interrupts will occur during execution of these functions. The examples also assume that no Flash boot loader is present in the software. If such code is present, the

EEPROM write function must also wait for any ongoing SPM command to finish.

Assembly Code Example

EEPROM_write:

; Wait for completion of previous write

sbic

EECR,EEWE

rjmp

EEPROM_write

; Set up address (r18:r17) in address register

out

EEARH, r18

out

EEARL, r17

; Write data (r16) to data register

out

EEDR,r16

; Write logical one to EEMWE

sbi

EECR,EEMWE

; Start eeprom write by setting EEWE

sbi

EECR,EEWE

ret

C Code Example

void

EEPROM_write(unsigned int uiAddress, unsigned char ucData)

{

/* Wait for completion of previous write */ while(EECR & (1<<EEWE))

;

/* Set up address and data registers */

EEAR = uiAddress;

EEDR = ucData;

/* Write logical one to EEMWE */

EECR |= (1<<EEMWE);

/* Start eeprom write by setting EEWE */

EECR |= (1<<EEWE);

}

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ATmega8(L)

The next code examples show assembly and C functions for reading the EEPROM. The examples assume that interrupts are controlled so that no interrupts will occur during execution of these functions.

Assembly Code Example

EEPROM_read:

; Wait for completion of previous write

sbic

EECR,EEWE

rjmp

EEPROM_read

; Set up address (r18:r17) in address register

out

EEARH, r18

out

EEARL, r17

; Start eeprom read by writing EERE

sbi

EECR,EERE

; Read data from data register

in

r16,EEDR

ret

C Code Example

unsigned char

EEPROM_read(unsigned int uiAddress)

{

/* Wait for completion of previous write */

while(EECR & (1<<EEWE))

;

/* Set up address register */

EEAR = uiAddress;

/* Start eeprom read by writing EERE */

EECR |= (1<<EERE);

/* Return data from data register */

return EEDR;

}

EEPROM Write during

Power-down Sleep

Mode

When entering Power-down sleep mode while an EEPROM write operation is active, the

EEPROM write operation will continue, and will complete before the Write Access time has passed. However, when the write operation is completed, the Oscillator continues running, and as a consequence, the device does not enter Power-down entirely. It is therefore recommended to verify that the EEPROM write operation is completed before entering Power-down.

Preventing EEPROM

Corruption

During periods of low V

CC, the EEPROM data can be corrupted because the supply voltage is too low for the CPU and the EEPROM to operate properly. These issues are the same as for board level systems using EEPROM, and the same design solutions should be applied.

An EEPROM data corruption can be caused by two situations when the voltage is too low. First, a regular write sequence to the EEPROM requires a minimum voltage to operate correctly. Second, the CPU itself can execute instructions incorrectly, if the supply voltage is too low.

EEPROM data corruption can easily be avoided by following this design recommendation:

Keep the AVR RESET active (low) during periods of insufficient power supply voltage. This can be done by enabling the internal Brown-out Detector (BOD). If the detection level of the internal BOD does not match the needed detection level, an external low V

CC

Reset Protec-

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I/O Memory

tion circuit can be used. If a reset occurs while a write operation is in progress, the write operation will be completed provided that the power supply voltage is sufficient.

The I/O space definition of the ATmega8 is shown in “Register Summary” on page 280 .

All Atmel

®

AVR

®

ATmega8 I/Os and peripherals are placed in the I/O space. The I/O locations are accessed by the IN and OUT instructions, transferring data between the 32 general purpose working registers and the I/O space. I/O Registers within the address range 0x00 - 0x1F are directly bit-accessible using the SBI and CBI instructions. In these registers, the value of single

bits can be checked by using the SBIS and SBIC instructions. Refer to the “Instruction Set Summary” on page 282 for more details. When using the I/O specific commands IN and OUT, the I/O

addresses 0x00 - 0x3F must be used. When addressing I/O Registers as data space using LD and ST instructions, 0x20 must be added to these addresses.

For compatibility with future devices, reserved bits should be written to zero if accessed.

Reserved I/O memory addresses should never be written.

Some of the Status Flags are cleared by writing a logical one to them. Note that the CBI and SBI instructions will operate on all bits in the I/O Register, writing a one back into any flag read as set, thus clearing the flag. The CBI and SBI instructions work with registers 0x00 to 0x1F only.

The I/O and Peripherals Control Registers are explained in later sections.

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ATmega8(L)

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