TM8050H-8W
Datasheet
80 A 800 V high temperature thyristor (SCR) in TO-247 package
A
G
K
TAB = A
K
A
G
TO-247 uninsulated
Product status link
TM8050H-8W
Product summary
I
T(RMS)
V
DRM
/V
RRM
I
GT
T j
80 A
800 V
50 mA
150 °C
Features
• High junction temperature: T j
= 150 °C
• Blocking voltage: V
DRM
= V
RRM
= 800 V
• Nominal current: I
T(RMS)
= 80 A
• Gate triggering current: I
GT
max. = 50 mA
• High noise immunity: dV/dt > 1 kV/µs
• Through hole package TO-247
• Increase of thermal margin due to extended T j
up to 150 °C
• Low I
D
and I
R
in blocking state
• Ecopack2 (includes halogen free & RoHS compliance)
Applications
• AC-DC rectifier controlled bridge
• Variable speed motor drive
• Battery charging system
• AC solid state relay
• By pass switch of UPS
• Industrial welding systems
• Motor soft starter systems
Description
Available in through hole package TO-247, the TM8050H-8W is an 800 V SCR thyristor suitable for applications where high power switching (I
T(RMS)
= 80 A) and low power dissipation (V
TM
= 1.55 V at 160 A) are key features. These features make it ideal for motorbike voltage regulator, by-pass AC switch, controlled rectifier bridge, solid state relay, battery charger, welding equipment and motor driver applications.
DS11583 - Rev 2 - August 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
1
DS11583 - Rev 2
TM8050H-8W
Characteristics
Characteristics
Symbol
I
T(RMS)
I
T(AV)
I
TSM
Table 1. Absolute ratings (limiting values)
Parameter
RMS on-state current (180 ° conduction angle)
Average on-state current (180 ° conduction angle)
T
C
= 126 °C
Non repetitive surge peak on-state current, V
R
= 0 V t p
= 8.3 ms
T j
initial = 25 °C t p
= 10 ms
T j
= 25 °C I 2 t
V
RRM
/ V
DRM
P dl/dt
I
GM
G(AV)
V
RGM
T stg
T j
I 2 t value for fusing
Maximum repetitive symmetric blocking voltage
I
Critical rate of rise of on-state current
G
= 2 x I
GT
, tr ≤ 100 ns
Peak gate current
Average gate power dissipation
Maximum peak reverse gate voltage
Storage junction temperature range
Maximum operating junction temperature f = 50 Hz T j
= 25 °C t p
= 20 µs T j
= 150 °C
T j
= 150 °C
Value
80
50
731
670
2245
800
200
8
1
5
-40 to +150
-40 to +150
Unit
A
A
A
A 2 s
V
A/µs
A
W
V
°C
°C
Symbol
I
GT
V
GT
V
GD
I
H
I
L t gt dV/dt t q
Table 2. Electrical characteristics (T j
= 25 °C unless otherwise specified)
Test Conditions
V
D
= 12 V, R
L
= 33 Ω
V
D
= 12 V, R
L
= 33 Ω
V
D
= V
DRM
, R
L
= 3.3 kΩ
I
T
= 500 mA, gate open
I
G
= 1.2 x I
GT
I
T
= 80 A, V
D
= V
DRM
, I
G
= 200 mA, dI
G
/dt = 0.2 A/µs
V
D
= 67 % V
DRM
, gate open
I
T
= 33 A, dI
T
/dt = 10 A/µs, V
R
= 75 V, V
D
= 400 V, dV
D
/dt =
20 V/µs, t
P
= 100 µs
T j
= 150 °C
T j
= 150 °C
T j
= 150 °C
Min.
Max.
Max.
Min.
Max.
Max.
Typ.
Min.
Max.
Value
2.5
50
1.5
0.2
100
125
3
1000
150
Unit mA
V
V mA mA
µs
V/µs
µs
Symbol
V
TM
V
TO
R
D
I
DRM
I
RRM
I
TM
= 160 A, t p
= 380 µs
On state threshold voltage
On state dynamic resistance
Table 3. Static characteristics
Test conditions
V
D
= V
DRM
= V
R
= V
RRM
= 800 V
T j
= 25 °C
T j
= 150 °C
T j
= 150 °C
T j
= 25 °C
T j
= 150 °C
Max.
Max.
Max.
Max.
Max.
Value
1.55
0.85
5.5
20
2.5
Unit
V mΩ
µA mA page 2/10
Symbol
R th(j-c)
R th(j-a)
Junction to case (DC,max.)
Junction to ambient DC (typ.)
Table 4. Thermal parameters
Parameter
TM8050H-8W
Characteristics
Value
0.30
50
Unit
°C/W
DS11583 - Rev 2 page 3/10
TM8050H-8W
Characteristics (curves)
1.1
Characteristics curves
Figure 1. Maximum average power dissipation versus average on-state current
50
40
30
20
10
0
0
90
80
70
60
P(W)
5 10 15
α = 30 °
α = 60°
α = 90°
α = 120 °
α = 180 °
20 25 30
IT(AV)(A)
35 40 45 50
D.C
55 60 65
Figure 2. Average and DC on-state current versus case temperature
80
70
60
50
40
30
20
10
0
0
IT(AV)(A)
α = 30 °
25
α = 60 °
α = 90 °
α = 120 °
50 75
α = 180 °
Tc (°C)
100 125
D.C
150
Figure 3. Average and D.C. on state current versus ambient temperature
4.5
IT(AV)(A)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
α = 180 °
25
D.C
50
TA (°C)
75 100 125 150
Figure 4. On-state characteristics (maximum values)
1000
ITM(A)
100
10
1
0.0
T j
= 150 °C
1.0
T j
= 25 °C
2.0
VTM (V)
3.0
T j
V
TO max :
= 0.85 V
Rd= 5.5m Ω
4.0
Figure 5. Relative variation of thermal impedance junction to case and junction to ambient versus pulse duration
Figure 6. Relative variation of gate trigger current and gate voltage versus junction temperature
1.0E+00
K = [Zth/Rth]
Zth(j -c)
Zth(j -a)
2.0
IGT, VGT[Tj] / IGT, VGT[Tj = 25 °C]
IGT
1.5
1.0E-01
1.0
VGT
0.5
1.0E-02
1.0E-03 1.0E-02 1.0E-01 1.0E+00 tp(s)
1.0E+01 1.0E+02 1.0E+03
0.0
-50 -25 0 25 50
Tj(°C)
75 100 125 150
DS11583 - Rev 2 page 4/10
TM8050H-8W
Characteristics (curves)
Figure 7. Relative variation of holding current and latching current versus junction temperature (typical values)
2.0
IH, IL[Tj]/ IH, IL[Tj = 25 °C]
1.8
1.5
1.3
1.0
0.8
IL
IH
0.5
0.3
0.0
-50 -25 0 25 50
Tj(°C)
75 100 125 150
Figure 8. Surge peak on state current versus number of cycles
750
700
650
600
550
500
450
400
350
300
250
200
150
100
50
0
ITSM(A)
Repetitive
Tc= 126 °C
1
Non repetitive
Tj initial = 25 °C
10
Number of cycles
100
V
R
= 0 V
1000
Figure 9. Non repetitive surge peak on state current for a half cycle sine pulse versus pulse width t p
< 10 ms
Figure 10. Relative variation of leakage current versus junction temperature for different values of blocking voltage
10000
ITSM(A) dI/dt limitation: 200 A/µs
T j initial = 25 °C
V
R
= 0 V
1000
100
10
0.01
0.10
ITSM tP(ms)
1.00
10.00
1.0E+00
IDRM, IRRM[Tj; VDRM, VRRM]/ IDRM, IRRM[150°C; 800 V]
V
DRM
(
= V
RRM
= 800 V maximum values)
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25 50 75
V
DRM
= V
RRM
= 800 V
(typical values)
V
DRM
= V
RRM
= 600 V
(typical values)
100
Tj(°C)
125 150
Figure 11. Relative variation of static dV/dt immunity versus junction temperature (typical values)
1
0
10
4
3
2
5 dV/dt[Tj]/dV/dt[Tj = 150 °C]
30 50 70
V
D
= 0.67 x V
DRM
Tj(°C)
90 110 130 150
DS11583 - Rev 2 page 5/10
2
2.1
TM8050H-8W
Package information
Package information
•
•
•
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
TO-247 package information
Epoxy meets UL 94,V0
Recommended torque value: 0.8 N·m
Maximum torque value: 1 N·m
Figure 12. TO-247 package outline
DS11583 - Rev 2
0075325_9 page 6/10
DS11583 - Rev 2
TM8050H-8W
TO-247 package information
Table 5. TO-247 package mechanical data
Dimensions
Dim.
L1
L2 e
L
ØP
(3)
ØR
S b2 c
D
(2)
E
A
A1 b b1
Min.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
3.55
4.50
5.30
Millimeters
Typ.
5.45
18.50
3.65
5.50
5.70
5.50
1. Inch dimensions given only for reference
2. Dimension D plus gate protrusion does not exceed 20.5 mm
3. Resin thickness around the mounting hole is not less than 0.9 mm
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
Min.
0.1909
0.0866
0.0394
0.0787
0.1181
0.0157
0.7815
0.6083
0.2087
0.5591
0.1457
0.1398
0.1772
0.2087
Inches (1)
Typ.
0.2146
0.7283
0.2165
Max.
0.2028
0.1024
0.0551
0.0945
0.1339
0.0315
0.7933
0.6201
0.2205
0.5827
0.1693
0.1437
0.2165
0.2244
page 7/10
TM8050H-8W
Ordering information
3
Ordering information
Figure 13. Ordering information scheme
TM 80 50 H - 8 W
Series
Thyristor
RMS current
80 = 80 A
IGT current
50 = 50 mA
Maximum junction temperature
H = 150 °C
Voltage
8 = 800 V
Package
W = TO-247
Order code
TM8050H-8W
Marking
TM8050H8
Table 6. Ordering information
Package
TO-247
Weight
4.43 g
Base qty.
30
Delivery mode
Tube
DS11583 - Rev 2 page 8/10
Revision history
Date
03-May-2016
08-Aug-2019
Revision
1
2
Table 7. Document revision history
Changes
Initial release.
Updated Table 1 ,
Figure 8 and Figure 9
. Minor text change.
TM8050H-8W
DS11583 - Rev 2 page 9/10
TM8050H-8W
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© 2019 STMicroelectronics – All rights reserved
DS11583 - Rev 2 page 10/10
