STMicroelectronics STB8N65M5 Datasheet
Reklaam
Reklaam
STB8N65M5, STD8N65M5, STF8N65M5,
STI8N65M5, STP8N65M5, STU8N65M5
N-channel 650 V, 0.56
Ω
typ., 7 A MDmesh™ V Power MOSFET
in D²PAK, I²PAK, TO-220, TO-220FP, DPAK and IPAK packages
Datasheet — production data
Features
Type
V
DSS
@
T
Jmax
R
DS(on) max.
I
D
STB8N65M5
STD8N65M5
STF8N65M5
STI8N65M5
STP8N65M5
STU8N65M5
710 V < 0.6 Ω 7 A
■
■
■
■
■
■
Worldwide best R
DS(on)
* area
Higher V
DSS
rating
High dv/dt capability
Excellent switching performance
Easy to drive
100% avalanche tested
P
TOT
70 W
70 W
25 W
70 W
70 W
70 W
Applications
■ Switching applications
TAB
TO-220FP
1
2
3
I²PAK
1
2
3
TAB
TAB
DPAK
1
3
1
3
D²PAK
TO-220
1
2
3
Figure 1.
Internal schematic diagram
$4!"
TAB
TAB
IPAK
1
2
3
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
'
3
!-V
Table 1.
Device summary
Order codes Marking Package Packaging
STB8N65M5
STD8N65M5
STF8N65M5
STI8N65M5
STP8N65M5
STU8N65M5
8N65M5
D²PAK
DPAK
TO-220FP
I²PAK
TO-220
IPAK
Tape and reel
Tape and reel
Tube
Tube
Tube
Tube
October 2012
This is information on a product in full production.
Doc ID 16531 Rev 5 1/26 www.st.com
26
Contents
Contents
STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2/26 Doc ID 16531 Rev 5
STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol Parameter
V
I
E
I
GS
D
I
D
I
DM
(2)
P
TOT
AR
AS
Gate- source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Max current during repetitive or single pulse avalanche (pulse width limited by T
JMAX
)
Single pulse avalanche energy
(starting T j
= 25°C, I
D
= I
AR
, V
DD
= 50V)
Peak diode recovery voltage slope dv/dt
(3)
V
ISO
Insulation withstand voltage (RMS) from all three leads to external heat sink
(t = 1 s; T C = 25 °C)
T stg
T j
Storage temperature
Max. operating junction temperature
1.
Limited by maximum junction temperature
2.
Pulse width limited by safe operating area.
3.
I
SD
≤ ≤
DD
≤
DS(peak)
< V
(BR)DSS
.
TO-220
D²PAK
I²PAK
IPAK
DPAK,
± 25
7
4.4
28
70
2
120
15
-55 to 150
150
TO-220FP
7
(1)
4.4
(1)
28
(1)
25
2500
Unit mJ
V/ns
V
°C
°C
A
A
W
V
A
A
Table 3.
Thermal data
Value
Symbol Parameter
DPAK IPAK TO-220 I²PAK D²PAK TO-220FP
R thj-case
Thermal resistance junction-case max
R thj-amb
Thermal resistance junction-ambient max
R thj-pcb
(1)
Thermal resistance junction-pcb max
50
1.
When mounted on 1 inch² FR-4 board, 2oz Cu.
100
1.79
62.5
30
5
62.5
Unit
°C/W
°C/W
°C/W
Doc ID 16531 Rev 5 3/26
Electrical characteristics STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5
(T
C
= 25 °C unless otherwise specified)
Table 4.
Symbol
On /off states
Parameter Test conditions
V
(BR)DSS
V
R
I
I
DSS
GSS
GS(th)
DS(on
Drain-source breakdown voltage
I
D
= 1 mA, V
GS
= 0
Zero gate voltage drain current (V
GS
= 0)
Gate-body leakage current (V
DS
= 0)
V
V
V
DS
DS
GS
= 650 V
= 650 V, T
= ± 25 V
C
=125 °C
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on- resistance
V
GS
= 10 V, I
D
= 3.5 A
Min.
Typ.
Max.
Unit
650
3
1
100
V
µA
µA
4
0.56
±100 nA
5
0.60
V
Ω
Table 5.
Symbol
Dynamic
Parameter Test conditions Min.
Typ.
Max.
Unit
C
C
C
C
C oss o(er)
(1) o(tr)
(2)
R iss rss
G
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output capacitance energy related
Equivalent output capacitance time related
Intrinsic gate resistance
V
V
V
V
DS
GS
GS
GS
= 100 V, f = 1 MHz,
= 0
= 0, V
= 0, V
DS
DS
= 0 to 520 V
= 0 to 520 V f = 1 MHz open drain
-
-
-
2
690
18
2
17
52
4
-
-
-
6 pF pF pF pF pF
Ω
Q g
Q gs
Q gd
Total gate charge
Gate-source charge
Gate-drain charge
V
V
DD
GS
= 520 V, I
= 10 V
(see
D
= 3.5 A,
-
15
3.6
6
-
1.
C o(er) is a constant capacitance value that gives the same stored energy as C oss to 80% V
DSS
while V
DS
is rising from 0
2.
C o(tr) is a constant capacitance value that gives the same charging time as C oss to 80% V
DSS
while V
DS
is rising from 0 nC nC nC
4/26 Doc ID 16531 Rev 5
STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Electrical characteristics
Table 6.
Symbol t d(off) t r(V) t c(off) t f(i)
Switching times
Parameter
Turn-off delay time
Rise time
Cross time
Fall time
Test conditions
V
DD
= 400 V, I
D
= 4A,
R
G
= 4.7
Ω,
V
GS
= 10 V
(see
(see
Min.
Typ.
Max. Unit
-
50
14
20
11
ns ns ns ns
Table 7.
Symbol
Source drain diode
Parameter Test conditions
I
SD
I
SDM
(1)
V
SD
(2) t rr
Q rr
I
RRM t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
I
SD
= 7 A, V
GS
= 0
= 7 A, di/dt = 100 A/µs
V
DD
= 100 V
(see
I
SD
1.
Pulse width limited by safe operating area
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
= 7 A, di/dt = 100 A/µs
V
DD
= 100 V, T j
(see
= 150 °C
Min.
Typ.
Max. Unit
-
-
7
28
1.5
-
-
200
1.6
16
263
1.9
15 ns
µC
A ns
µC
A
A
A
V
Doc ID 16531 Rev 5 5/26
Electrical characteristics STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5
2.1 Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220,
I²PAK, D²PAK
AM0 8 194v1
I
D
(A)
Figure 3.
Thermal impedance for TO-220,
I²PAK, D²PAK
10
1 a tion in thi s a re
D a
i s
S
(on) a x R
Oper
Limited
10 µs
100 µs
1m s
10m s
0.1
0.01
0.1
1 10
Tj=150°C
Tc=25°C
S ingle p u l s e
100 V
D S
(V)
Figure 4.
Safe operating area for DPAK, IPAK Figure 5.
Thermal impedance for DPAK, IPAK
AM0 8 195v1
I
D
(A)
10
1 a tion in thi s a re a
i s
D
S
(on) a x R
Oper
Limited
10 µs
100 µs
1m s
10m s
0.1
0.01
0.1
1 10
Tj=150°C
Tc=25°C
S ingle p u l s e
100 V
D S
(V)
Figure 6.
Safe operating area for TO-220FP Figure 7.
Thermal impedance for TO-220FP
AM0 8 196v1
I
D
(A)
10
1
0.1
0.01
0.1
a tion in thi s a re a
i s
D
S
(on) a x R
Oper
Limited
1 10
Tj=150°C
Tc=25°C
S ingle p u l s e
100 V
D S
(V)
10 µs
100 µs
1m s
10m s
6/26 Doc ID 16531 Rev 5
STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Electrical characteristics
Figure 8.
Output characteristics
I
D
(A)
12
V
G S
=10V
10
8
7V
6.5V
AM0 8 197v1
Figure 9.
Transfer characteristics
7.5V
I
D
(A)
12
V
D S
=20V
10
8
AM0 8 19 8 v1
6 6
6V
4 4
2
1000
100
10
1
0.1
1 10 100
2
0
0 5 10 15
5.5V
5V
V
D S
(V)
0
3 4 5 6 7 8 9 V
G S
(V)
Figure 10.
Gate charge vs gate-source voltage Figure 11.
Static drain-source on-resistance
V
G S
(V)
12
V
D S V
DD
=520V
I
D
= 3 .5A
V
G S
AM0 3 195v1
V
D S
(V)
500
R
D S (on)
(Ohm)
0.5
8
V
G S
=10V
AM0 8 200v1
10
400
0.56
8
3 00
6
0.54
200
4
0.52
2
100
0
0 5 10 15
0
Q g
(nC)
0.50
0 2 4 6 I
D
(A)
Figure 12.
Capacitance variations
C
(pF)
AM0 8 202v1
Figure 13.
Output capacitance stored energy
AM0 8 201v1
E o ss
( µ J)
3 .5
3 .0
Ci ss
2.5
Co ss
Cr ss
V
D S
(V)
2.0
1.5
1.0
0.5
0
0 100 200 3 00 400 500 600 V
D S
(V)
Doc ID 16531 Rev 5 7/26
Electrical characteristics STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5
Figure 14.
Normalized gate threshold voltage vs temperature
AM0 8 204v1
V
G S (th)
(norm)
1.10
I
D
=250 µ A
Figure 15.
Normalized on-resistance vs temperature
AM0 8 205v1
R
D S (on)
(norm)
V
G S
=10V
I
D
= 3 .5A
2.0
1.00
1.5
0.90
0.
8 0
1.0
0.70
-50 -25 0 25 50 75 100 T
J
(°C)
0.5
-50 -25 0 25 50 75 100 T
J
(°C)
Figure 16.
Switching losses vs gate resistance
(1)
Figure 17.
Normalized B
VDSS
vs temperature
AM0 8 206v1 AM10 3 99v1
E
(
μ
J)
100
I
D
=4A
V
CL
=400V
V
G S
=10V
Eoff
V
D S
(norm)
1.0
8
1.06
1.04
I
D
= 1mA
Eon
1.02
1.00
10
1
0 10 20 3 0 40
1.
Eon including reverse recovery of a SiC diode
R
G
(
Ω
)
0.9
8
0.96
0.94
0.92
-50 -25 0 25 50 75 100 T
J
(°C)
8/26 Doc ID 16531 Rev 5
STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5
3 Test circuits
Test circuits
Figure 18. Switching times test circuit for resistive load
Figure 19. Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k Ω
V
G S
V
D
R
G
R
L
D.U.T.
2200
μ
F
3 .
3
μ
F
V
DD
V i
=20V=V
GMAX
2200
μ F
I
G
=CON S T
2.7k
Ω
100 Ω
D.U.T.
V
G
P
W
47k
Ω
P
W
1k
Ω
AM0146 8 v1 AM01469v1
Figure 20. Test circuit for inductive load switching and diode recovery times
Figure 21. Unclamped inductive load test circuit
25 Ω
G
A
D
D.U.T.
S
B
R
G
A
FA S T
DIODE
A
B
B
G
D
S
L=100 μ H
3 .
3
μ F
1000
μ F
V
DD
V i
V
D
I
D
L
D.U.T.
2200
μ F
3 .
3
μ F
V
DD
P w
Figure 22. Unclamped inductive waveform
V
(BR)D SS
V
D
AM01470v1 AM01471v1
Figure 23. Switching time waveform
Concept w a veform for Ind u ctive Lo a d T u rn-off
Id
90 % Vd s 90 % Id
Tdel a y-off
I
DM
Vg s
90 % Vg s
I
D
Vg s (I(t))
V
DD
V
DD
10 % Id
Vd s
10 % Vd s
Tri s e Tf a ll
Tcro ss -over
AM01472v1 AM05540v2
Doc ID 16531 Rev 5 9/26
Package mechanical data
4
STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
10/26 Doc ID 16531 Rev 5
STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Package mechanical e e1
H
J1
L
L1
L2
R
V2 c c2
D
D1
E
E1
A
A1 b b2
Table 8.
Dim.
D²PAK (TO-263) mechanical data
Min.
0.45
1.23
8.95
7.50
10
8.50
4.40
0.03
0.70
1.14
4.88
15
2.49
2.29
1.27
1.30
0° mm
Typ.
2.54
0.4
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
15.85
2.69
2.79
1.40
1.75
8°
Doc ID 16531 Rev 5 11/26
Package mechanical data STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5
Figure 24.
D²PAK (TO-263) drawing
0079457_T
Figure 25.
D²PAK footprint
(a)
16.90
12.20
9.75
12/26 a.
All dimension are in millimeters
Doc ID 16531 Rev 5
3 .50
1.60
5.0
8
Footprint
STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Package mechanical
E1 e e1
H
L
L1
L2
L4
R
V2 b4 c c2
D
D1
E
A
A1
A2 b
Table 9.
Dim.
DPAK (TO-252) mechanical data
Min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
1
0.60
0° mm
Typ.
5.10
4.70
2.28
2.80
0.80
0.20
Max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
1
8°
Doc ID 16531 Rev 5 13/26
Package mechanical data STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5
Figure 26.
DPAK (TO-252) drawing
006 8 772_I
Figure 27.
DPAK footprint
(b)
6.7
1.
8 3
1.6
6.7
1.6
2.
3
2.
3
AM0 88 50v1
14/26 b.
All dimensions are in millimeters.
Doc ID 16531 Rev 5
STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Package mechanical
F
F1
F2
G
G1
H
A
B
D
E
L5
L6
L7
Dia
L2
L3
L4
Table 10.
TO-220FP mechanical data
Dim.
Min.
0.75
1.15
1.15
4.95
2.4
10
4.4
2.5
2.5
0.45
28.6
9.8
2.9
15.9
9
3 mm
Typ.
16
Max.
1
1.70
1.70
5.2
2.7
10.4
4.6
2.7
2.75
0.7
30.6
10.6
3.6
16.4
9.3
3.2
Doc ID 16531 Rev 5 15/26
Package mechanical data STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5
Figure 28.
TO-220FP drawing
16/26 Doc ID 16531 Rev 5
7012510_Rev_K_B
STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Package mechanical
Table 11.
I²PAK (TO-262) mechanical data
DIM.
E
L
L1
L2
D e e1
A
A1 b b1 c c2
Figure 29.
I²PAK (TO-262) drawing min.
8.95
2.40
4.95
10
13
3.50
1.27
4.40
2.40
0.61
1.14
0.49
1.23
mm.
typ max.
9.35
2.70
5.15
10.40
14
3.93
1.40
4.60
2.72
0.88
1.70
0.70
1.32
Doc ID 16531 Rev 5
00049 8 2_Rev_H
17/26
Package mechanical data STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5
D
D1
E e e1
F
H1
J1
L
A b b1 c
Table 12.
TO-220 type A mechanical data
Dim.
Min.
4.40
0.61
1.14
0.48
15.25
L1
L20
L30
∅
P
Q
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
mm
Typ.
1.27
16.40
28.90
3.85
2.95
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
18/26 Doc ID 16531 Rev 5
STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Package mechanical
Figure 30.
TO-220 type A drawing
00159 88 _typeA_Rev_ S
Doc ID 16531 Rev 5 19/26
Package mechanical data STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5
Table 13.
IPAK (TO-251) mechanical data mm.
DIM min.
typ.
max.
A 2.20 2.40
A1 0.90 b 0.64
1.10
0.90 b2 0.95 b4 5.20 5.40
B5 0.30 c 0.45 0.60 c2 0.48
D 6.00
E 6.40
0.60
6.20
6.60
e 2.28 e1 4.40 4.60
H 16.10
L 9.00
L1 0.80
9.40
1.20
V1 10°
20/26 Doc ID 16531 Rev 5
STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Package mechanical
Figure 31.
IPAK (TO-251) drawing
006 8 771_J
Doc ID 16531 Rev 5 21/26
Packaging mechanical data STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5
A0
B0
D
D1
E
F
K0
P0
P1
P2
R
T
W
Table 14.
D²PAK (TO-263) tape and reel mechanical data
Tape mm
Dim.
Dim.
Min.
10.5
15.7
1.5
1.59
1.65
11.4
4.8
3.9
11.9
1.9
50
0.25
23.7
Max.
11.6
5.0
4.1
12.1
2.1
10.7
15.9
1.6
1.61
1.85
0.35
24.3
C
D
G
A
B
N
T
Min.
1.5
12.8
20.2
24.4
100
Base qty
Bulk qty
Reel mm
Max.
330
13.2
26.4
30.4
1000
1000
22/26 Doc ID 16531 Rev 5
STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Packaging mechanical
Table 15.
DPAK (TO-252) tape and reel mechanical data
Tape mm
Dim.
Dim.
A0
B0
B1
D
D1
E
F
K0
P0
P1
P2
R
T
W
Min.
6.8
10.4
1.5
1.5
1.65
7.4
2.55
3.9
7.9
1.9
40
0.25
15.7
1.85
7.6
2.75
4.1
8.1
2.1
Max.
7
10.6
12.1
1.6
0.35
16.3
G
N
T
C
D
A
B
Min.
1.5
12.8
20.2
16.4
50
Base qty.
Bulk qty.
Reel mm
Max.
330
13.2
18.4
22.4
2500
2500
Doc ID 16531 Rev 5 23/26
Packaging mechanical data STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5
Figure 32.
Tape for DPAK and D²PAK
T
Top cover t a pe
10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm
P0 D P2
K0
F
E
W
B0
A0 P1
U s er direction of feed
D1
R
24/26
U s er direction of feed
Figure 33.
Reel for DPAK and D²PAK
REEL DIMEN S ION S
40mm min.
Acce ss hole
At s l ot loc a tion
B
D
C
A
Bending r a di us
AM0 88 52v2
T
N
F u ll r a di us
Doc ID 16531 Rev 5
T a pe s lot in core for t a pe s t a rt 25 mm min.
width
G me asu red a t h ub
AM0 88 51v2
STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Revision history
Table 16.
Document revision history
Date Revision
23-Oct-2009
14-Oct-2010
05-Jul-2011
04-Oct-2012
29-Oct-2012
1
2
3
4
5
Changes
First release
Document status promoted from preliminary data to datasheet.
has been updated.
– Updated:
and
.
– Updated:
below the
– Updated the entire Section 4: Package mechanical data
.
– Updated title and description on the cover page.
– Updated R
G values in
.
Doc ID 16531 Rev 5 25/26
STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5
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