STF6N60M2, STP6N60M2,
STU6N60M2
N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh™ M2
Power MOSFETs in TO-220FP, TO-220 and IPAK packages
Datasheet - production data
Features
TAB
Order code
3
2
1
1
2
IPAK
3
TO-220FP
VDS @
TJmax
RDS(on)
max
ID
650 V
1.2 Ω
4.5 A
STF6N60M2
STP6N60M2
TAB
STU6N60M2
• Extremely low gate charge
• Excellent output capacitance (Coss) profile
3
1
2
• 100% avalanche tested
TO-220
• Zener-protected
Figure 1. Internal schematic diagram
, TAB
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, the devices exhibit low on-resistance
and optimized switching characteristics, rendering
them suitable for the most demanding high
efficiency converters.
AM15572v1
Table 1. Device summary
Order code
Marking
STF6N60M2
STP6N60M2
Package
TO-220FP
6N60M2
TO-220
STU6N60M2
October 2015
This is information on a product in full production.
Packing
Tube
IPAK
DocID024771 Rev 2
1/18
www.st.com
Contents
STF6N60M2, STP6N60M2, STU6N60M2
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
2/18
.............................................. 9
4.1
TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.2
TO-220 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3
IPAK(TO-251) package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
DocID024771 Rev 2
STF6N60M2, STP6N60M2, STU6N60M2
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220FP
VGS
Gate-source voltage
TO-220, IPAK
± 25
V
(1)
4.5
A
ID
Drain current (continuous) at TC = 25 °C
4.5
ID
Drain current (continuous) at TC = 100 °C
2.9(1)
2.9
A
(1)
18
A
60
W
IDM
(2)
Drain current (pulsed)
18
PTOT
Total dissipation at TC = 25 °C
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s; TC=25 °C)
dv/dt(3)
dv/dt
(4)
Tstg
Tj
20
2500
V
Peak diode recovery voltage slope
15
MOSFET dv/dt ruggedness
50
Storage temperature
V/ns
- 55 to 150
Operating junction temperature
°C
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 4.5 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V
4. VDS ≤ 480 V
Table 3. Thermal data
Value
Symbol
Parameter
Unit
TO-220FP
Rthj-case
Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-ambient max
TO-220
6.25
IPAK
2.08
62.5
°C/W
100
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not
repetitive (pulse width limited by Tjmax)
1
A
EAS
Single pulse avalanche energy (starting
Tj=25°C, ID= IAR; VDD=50)
86
mJ
DocID024771 Rev 2
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18
Electrical characteristics
2
STF6N60M2, STP6N60M2, STU6N60M2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
V(BR)DSS
Parameter
Drain-source
breakdown voltage
Test conditions
ID = 1 mA, VGS = 0
IDSS
VDS = 600 V
Zero gate voltage
drain current (VGS = 0) VDS = 600 V, TC=125 °C
IGSS
Gate-body leakage
current (VDS = 0)
Min.
Typ.
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source
on-resistance
Unit
600
V
1
µA
100
µA
±10
µA
3
4
V
1.06
1.2
Ω
Min.
Typ.
Max.
Unit
-
232
-
pF
-
14
-
pF
-
0.7
-
pF
VGS = ± 25 V
VGS(th)
Max.
2
VGS = 10 V, ID = 2.25 A
Table 6. Dynamic
Symbol
Parameter
Test conditions
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Coss eq.(1)
Equivalent output
capacitance
VDS = 0 to 480 V, VGS = 0
-
71
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
6.5
-
Ω
Qg
Total gate charge
-
8
-
nC
Qgs
Gate-source charge
-
1.7
-
nC
Qgd
Gate-drain charge
VDD = 480 V, ID = 4.5 A,
VGS = 10 V
(see Figure 18)
-
4
-
nC
VDS = 100 V, f = 1 MHz,
VGS = 0
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Table 7. Switching times
Symbol
td(on)
tr
td(off)
tf
4/18
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off delay time
VDD = 300 V, ID = 1.65 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17 and Figure 22)
Fall time
DocID024771 Rev 2
Min.
Typ.
Max.
Unit
-
9.5
-
ns
-
7.4
-
ns
-
24
-
ns
-
22.5
-
ns
STF6N60M2, STP6N60M2, STU6N60M2
Electrical characteristics
Table 8. Source drain diode
Symbol
ISD
Parameter
Test conditions
Min.
Typ.
Max. Unit
Source-drain current
-
4.5
A
ISDM
(1)
Source-drain current (pulsed)
-
18
A
VSD
(2)
Forward on voltage
-
1.6
V
ISD = 4.5 A, VGS = 0
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 4.5 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 19)
ISD = 4.5 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 19)
-
274
ns
-
1.47
µC
-
10.7
A
-
376
ns
-
1.96
µC
-
10.5
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID024771 Rev 2
5/18
18
Electrical characteristics
2.1
STF6N60M2, STP6N60M2, STU6N60M2
Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220FP
Figure 3. Thermal impedance for TO-220FP
AM15886v1
ID
(A)
Op
Lim era
ite tion
d
by in t
m his
ax ar
RD ea
S(
is
on
10
)
10µs
1
100µs
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1
10
1
100
VDS(V)
Figure 4. Safe operating area for TO-220
Figure 5. Thermal impedance for TO-220
AM15885v1
ID
(A)
10
)
Op
Lim era
ite tion
d
by in t
m his
ax ar
RD ea
S(
is
on
10µs
1
100µs
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1
10
1
100
VDS(V)
Figure 6. Safe operating area for IPAK
Figure 7. Thermal impedance for IPAK
AM15875v1
ID
(A)
10
)
Op
Lim era
ite tion
d
by in t
m his
ax ar
RD ea
S(
is
on
10µs
1
100µs
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1
6/18
1
10
100
VDS(V)
DocID024771 Rev 2
STF6N60M2, STP6N60M2, STU6N60M2
Electrical characteristics
Figure 8. Output characteristics
Figure 9. Transfer characteristics
AM15876v1
ID
(A)
8
VGS= 8, 9, 10 V
VGS= 7 V
7
AM15877v1
ID
(A)
8
VDS= 20 V
7
6
6
VGS= 6 V
5
5
4
4
3
3
VGS= 5 V
2
2
1
1
VGS= 4 V
0
5
0
10
15
0
20
VDS(V)
0
Figure 10. Gate charge vs gate-source voltage
AM15878v1
VDS
VGS
(V)
12
(V)
VDD=480V
ID=4.5V
VDS
10
4
2
6
8
10 VGS(V)
Figure 11. Static drain-source on-resistance
AM15879v1
RDS(on)
(Ω)
500
1.120
400
1.100
300
1.080
200
1.060
100
1.040
VGS=10V
8
6
4
2
0
0
4
2
6
8
0
Qg(nC)
Figure 12. Capacitance variations
0
1
2
3
4
ID(A)
Figure 13. Normalized VDS vs temperature
AM15880v1
C
(pF)
1.020
AM15883v1
RDS(on)
(norm)
VGS=10 V
2.3
1000
2.1
Ciss
100
1.9
1.7
1.5
10
Coss
1
Crss
1.3
1.1
0.1
0.1
1
10
100
VDS(V)
0.9
0.7
0.5
-50 -25
DocID024771 Rev 2
0
25
50
75
100
TJ(°C)
7/18
18
Electrical characteristics
STF6N60M2, STP6N60M2, STU6N60M2
Figure 14. Normalized gate threshold voltage vs
temperature
AM15882v1
VGS(th)
(norm)
Figure 15. Normalized on-resistance vs
temperature
AM15883v1
RDS(on)
(norm)
VGS=10 V
2.3
1.1
ID=250 µA
2.1
1.9
1.0
1.7
1.5
0.9
1.3
1.1
0.8
0.9
0.7
-50 -25
0.7
0.5
-50 -25
0
25
50
75
100
TJ(°C)
Figure 16. Source-drain diode forward
characteristics
AM15884v1
VSD
(V)
1.4
1.2
TJ=-50°C
1
0.8
0.6
TJ=150°C
TJ=25°C
0.4
0.2
0
0
8/18
1
2
3
4
ISD(A)
DocID024771 Rev 2
0
25
50
75
100
TJ(°C)
STF6N60M2, STP6N60M2, STU6N60M2
3
Test circuits
Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01469v1
AM01468v1
Figure 19. Test circuit for inductive load
switching and diode recovery times
A
A
Figure 20. Unclamped inductive load test circuit
L
A
D
G
FAST
DIODE
D.U.T.
S
3.3
μF
B
B
B
VD
L=100μH
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01471v1
AM01470v1
Figure 21. Unclamped inductive waveform
Figure 22. Switching time waveform
ton
9 %5 '66
tdon
9'
toff
tr
tdoff
tf
90%
90%
,'0
10%
,'
9''
10%
0
9''
VDS
90%
VGS
$0Y
0
DocID024771 Rev 2
10%
AM01473v1
9/18
18
Package information
4
STF6N60M2, STP6N60M2, STU6N60M2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/18
DocID024771 Rev 2
STF6N60M2, STP6N60M2, STU6N60M2
4.1
Package information
TO-220FP package information
Figure 23. TO-220FP package outline
7012510_Rev_K_B
DocID024771 Rev 2
11/18
18
Package information
STF6N60M2, STP6N60M2, STU6N60M2
Table 9. TO-220FP mechanical data
mm
Dim.
Min.
Typ.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
12/18
Max.
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
DocID024771 Rev 2
STF6N60M2, STP6N60M2, STU6N60M2
4.2
Package information
TO-220 package information
Figure 24. TO-220 type A package outline
BW\SH$B5HYB7
DocID024771 Rev 2
13/18
18
Package information
STF6N60M2, STP6N60M2, STU6N60M2
Table 10. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
14/18
Max.
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
DocID024771 Rev 2
STF6N60M2, STP6N60M2, STU6N60M2
4.3
Package information
IPAK(TO-251) package information
Figure 25. IPAK (TO-251) type A package outline
B,.BW\SH$BUHY
DocID024771 Rev 2
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18
Package information
STF6N60M2, STP6N60M2, STU6N60M2
Table 11. IPAK (TO-251) type A mechanical data
mm.
DIM
min.
typ.
A
2.20
2.40
A1
0.90
1.10
b
0.64
0.90
b2
b4
0.95
5.20
B5
5.40
0.30
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
E
6.40
6.60
e
e1
2.28
4.40
H
16/18
max.
4.60
16.10
L
9.00
9.40
L1
0.80
1.20
L2
0.80
V1
10°
DocID024771 Rev 2
1.00
STF6N60M2, STP6N60M2, STU6N60M2
5
Revision history
Revision history
Table 12. Document revision history
Date
Revision
11-Jun-2013
1
First release.
2
Updated title, features and description.
Updated Table 2.: Absolute maximum ratings and Table 8.: Source
drain diode.
Updated 4.3: IPAK(TO-251) package information.
Minor text changes.
01-Oct-2015
Changes
DocID024771 Rev 2
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STF6N60M2, STP6N60M2, STU6N60M2
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