STMicroelectronics STD9N65M2 Datasheet
Reklama
Reklama
STD9N65M2, STF9N65M2
STP9N65M2, STU9N65M2
Datasheet
N-channel 650 V, 0.79 Ω typ., 5 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages
TAB
TAB
1
DPAK
2
3
IPAK
1
2
3
TAB
G(1)
TO-220
1
2
3
D(2, TAB)
S(3)
TO-220FP
1
2
3
AM01475V1
Features
Order codes V
DS
R
DS(on)
max.
STD9N65M2
STF9N65M2
STP9N65M2
650 V 0.90 Ω
STU9N65M2
• Extremely low gate charge
• Excellent output capacitance (C
OSS
) profile
• 100% avalanche tested
• Zener-protected
I
D
5 A
Package
DPAK
TO-220FP
TO-220
IPAK
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
Product status link
STD9N65M2
STF9N65M2
STP9N65M2
STU9N65M2
DS10197 - Rev 3 - June 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
1
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
Electrical ratings
Electrical ratings
Symbol
Table 1. Absolute maximum ratings
Parameter
V
GS
I
D
I
D
I
DM
P
TOT
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
V
ISO
T stg
T
J
Total power dissipation at T
C
= 25 °C
Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; T
C
= 25 °C)
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
1. Current limited by package.
2. Pulse width is limited by safe operating area.
3. I
SD
≤ 5 A, di/dt = 400 A/μs; V
DS(peak)
< V
(BR)DSS
, V
DD
= 400 V.
4. V
DS
≤ 520 V.
Value
DPAK, TO-220, IPAK
±25
5
3.2
20
60
15
50
-55 to 150
TO-220FP
20
2.5
°C
Symbol Parameter
R thj-case
R thj-pcb
R thj-amb
Thermal resistance junction-case
Thermal resistance junction-pcb
Thermal resistance junction-ambient
1. When mounted on 1 inch 2 FR-4, 2 Oz copper board.
Table 2. Thermal data
DPAK
2.08
50
Value
TO-220FP TO-220
6.25
2.08
IPAK
62.5
100
Unit
°C/W
°C/W
°C/W
Unit
V
A
A
W kV
V/ns
Symbol
I
AR
E
AS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive
(pulse width limited by T
J
max)
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
= I
AR
; V
DD
= 50 V)
Value
1
105
Unit
A mJ
DS10197 - Rev 3 page 2/28
2
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
Electrical characteristics
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Parameter Test conditions
Drain-source breakdown voltage V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, V
DS
= 650 V
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 650 V, T
C
Gate-body leakage current
Gate threshold voltage
V
DS
= 0 V, V
GS
= ±25 V
V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on-resistance V
GS
= 10 V, I
D
= 2.5 A
1. Defined by design, not subject to production test.
Min.
Typ.
Max.
Unit
650
1
V
µA
2
100
±10
3 4
0.79
0.90
µA
µA
V
Ω
Table 5. Dynamic
C
Symbol
C iss
C
C oss rss oss eq.
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent capacitance energy related
Intrinsic gate resistance
V
V
DS
DS
Test conditions
= 100 V, f = 1 MHz, V
= 0 to 520 V, V
GS
GS
= 0 V
= 0 V
Min.
-
-
-
-
Typ.
310
18
0.9
109
Max.
-
-
-
-
Unit pF pF pF pF
R
Q
Q
Q g g gs gd
Total gate charge
Gate-source charge
Gate-drain charge f = 1 MHz open drain
V
DD
= 520 V, I
D
= 5 A
V
GS
= 0 to 10 V
(see
Figure 18. Test circuit for gate charge behavior )
-
-
-
-
6.6
10.3
2.4
4.8
-
-
-
-
Ω nC nC nC
1. C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss
when V
DS
increases from 0 to 80% V
DSS
.
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
= 325 V, I
D
= 2.5 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see
Figure 17. Test circuit for resistive load switching times
and
Figure 22. Switching time waveform )
Min.
Typ.
Max.
Unit
-
7.5
6.6
-
ns ns
-
22.5
18 -
ns ns
DS10197 - Rev 3 page 3/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
Electrical characteristics
Table 7. Source-drain diode
Symbol
I
SD
I
SDM
V
SD
t rr
Q rr
I
RRM
I t
Q rr rr
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1. Pulse width is limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
I
I
SD
SD
Test conditions
= 5 A, V
GS
= 0 V
= 5 A, di/dt = 100 A/µs, V
DD
(see
= 60 V
Figure 19. Test circuit for inductive load switching and diode recovery times
I
SD
= 5 A, di/dt = 100 A/µs,
V
DD
= 60 V, T
J
= 150 °C
(see
Figure 19. Test circuit for inductive load switching and diode recovery times )
-
-
-
-
-
-
Min.
Typ.
Max.
Unit
5 A
20 A
1.6
276
1.7
12.5
312
1.9
V ns
µC
A ns
µC
12.4
A
DS10197 - Rev 3 page 4/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area for DPAK and IPAK
AM18058v1 I
D
(A)
10
1
O pe
Li ra tio m ite n in
th is are
R a is
DS
(o n) d by m ax
0.1
0.01
0.1 1 10
Tj=150°C
Tc=25°C
S ingle puls e
100 V
DS
(V)
10 µ s
100 µ s
1ms
10ms
Figure 3. Safe operating area for TO-220FP
AM18056v1 I
D
(A)
10
1
O pe
Li ra tio m ite n in
th is are
R a is
DS
(o n) d by m ax
0.1
0.01
0.1 1 10
Tj=150°C
Tc=25°C
S ingle puls e
100 V
DS
(V)
10 µ s
100 µ s
1ms
10ms
I
D
(A)
Figure 5. Safe operating area for TO-220
AM18057v1
10
1
O pe
Li ra tio m ite n in
th is are
R a is
DS
(o n) d by m ax
0.1
0.01
0.1 1 10
Tj=150°C
Tc=25°C
S ingle puls e
100 V
DS
(V)
10 µ s
100 µ s
1ms
10ms
Figure 2. Thermal impedance for DPAK and IPAK
Figure 4. Thermal impedance for TO-220FP
K GC20940
10 -1
10 -2
10 -3
10 -4 10 -3 10 -2 10 -1 10 0 t p
(s)
Figure 6. Thermal impedance for TO-220
DS10197 - Rev 3 page 5/28
4
2
0
0
8
6
I
D
(A)
10
Figure 7. Output characteristics
GADG160320171044OCH
V
GS
= 8, 9, 10 V
V
GS
= 7 V
4 8
V
GS
= 6 V
V
GS
= 5 V
12 16 20 V
DS
(V)
Figure 9. Gate charge vs gate-source voltage
V
GS
(V)
12
10
8
GADG160320171046QVG V
DS
(V)
V
DD
= 520 V,
I
D
= 5 A
600
500
V
DS
400
6
4
2
0
0 2 4 6 8 10
300
200
100
Q
0 g
(nC)
C
(pF)
Figure 11. Capacitance variations
GADG160320171212CVR
10 3
C
ISS
10 2
10 1
10 0
10 -1
10 -1 f = 1 MHz
10 0 10 1 10 2
C
OSS
C
RSS
V
DS
(V)
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
Electrical characteristics (curves)
4
2
0
0
8
6
I
D
(A)
10
Figure 8. Transfer characteristics
GADG160320171044TCH
2
V
DS
= 20 V
4 6 8 V
GS
(V)
Figure 10. Static drain-source on-resistance
AM18062v1
R
DS (on)
( Ω )
V GS =10V
0.830
0.820
0.810
0.800
0.790
0.780
0.770
0.760
0 1 2 3 4 5 I
D
(A)
Figure 12. Normalized V
(BR)DSS
vs temperature
V
(BR)DSS
(norm.)
1.12
GADG160320171046BDV
1.08
1.04
1.00
0.96
0.92
0.88
-75 -25
I
D
= 1 mA
25 75 125 T j
(°C)
DS10197 - Rev 3 page 6/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
Electrical characteristics (curves)
Figure 13. Normalized gate threshold voltage vs temperature
V
GS(th)
(norm.)
GADG160320171045VTH
1.1
I
D
= 250 µA
1.0
0.9
0.8
0.7
0.6
-75 -25 25 75 125 T j
(°C)
Figure 15. Source-drain diode forward characteristics
AM18068v1
V
S D
(V)
T J =-50°C
1.0
T J
T
J
=150°C
2 I
S D
Figure 14. Normalized on-resistance vs temperature
R
DS(on)
(norm.)
GADG160320171045RON
2.2
1.8
1.4
1.0
0.6
0.2
-75 -25
V
GS
= 10 V
25 75 125 T j
(°C)
Figure 16.
E
OSS
Output capacitance stored energy
GADG160320171046EOS
2.5
2.0
1.5
1.0
0.5
0.0
0 100 200 300 400 500 600 V
DS
(V)
DS10197 - Rev 3 page 7/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
Test circuits
3
Test circuits
Figure 17. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF
D.U.T.
V
DD
AM01468v1
Figure 19. Test circuit for inductive load switching and diode recovery times
Figure 18. Test circuit for gate charge behavior
12 V
V
GS pulse width
2200
μF
+
I
G
= CONST
2.7 kΩ
47 kΩ
1 kΩ
47 kΩ
100 nF
100 Ω
V
DD
1 kΩ
D.U.T.
V
G
AM01469v1
Figure 20. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
+
_
R
G
A A fast diode
B
B
G
100 µH
D
D.U.T.
S
3.3
µF +
1000
µF
V
DD
AM01470v1
Figure 21. Unclamped inductive waveform
V (BR)DSS
V D
I DM
I D
V DD V
DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF
V
DD
D.U.T.
AM01471v1
0
Figure 22. Switching time waveform t d(on) t on t r t d(off) t off t f
90% 90%
10%
V
GS
V
DS
90%
10%
0 10%
AM01473v1
DS10197 - Rev 3 page 8/28
4
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
DS10197 - Rev 3 page 9/28
4.1
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
DPAK (TO-252) type A package information
DPAK (TO-252) type A package information
Figure 23. DPAK (TO-252) type A package outline
DS10197 - Rev 3
0068772_A_26 page 10/28
DS10197 - Rev 3
Dim.
c2
D
D1
E
E1 e e1
A
A1
A2 b b4 c
L2
L4
R
V2
H
L
(L1)
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
DPAK (TO-252) type A package information
Table 8. DPAK (TO-252) type A mechanical data mm
Typ.
9.35
1.00
2.60
0.65
0.60
4.95
6.40
4.60
2.159
4.445
0.64
5.20
0.45
0.48
6.00
Min.
2.20
0.90
0.03
5.10
4.70
2.286
4.572
2.80
0.80
0.20
0°
10.10
1.50
3.00
0.95
1.00
5.25
6.60
4.80
2.413
4.699
0.90
5.40
0.60
0.60
6.20
Max.
2.40
1.10
0.23
8° page 11/28
4.2
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
DPAK (TO-252) type C package information
DPAK (TO-252) type C package information
Figure 24. DPAK (TO-252) type C package outline
DS10197 - Rev 3
0068772_C_26 page 12/28
DS10197 - Rev 3
Dim.
L
L1
L2
L3
L4
L6
θ1
θ2
V2 c2
D
D1
E
E1 e
H
A
A1
A2 b b4 c
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
DPAK (TO-252) type C package information
Table 9. DPAK (TO-252) type C mechanical data
0.72
5.13
0.47
0.47
6.00
Min.
2.20
0.90
0.00
5.25
6.50
4.70
2.186
9.80
1.40
mm
Typ.
2.30
1.01
5.33
6.10
6.60
2.286
10.10
1.50
2.90 REF
0.90
0.60
5°
5°
0°
0.51 BSC
0.80
1.80 BSC
7°
7°
6.70
2.386
10.40
1.70
1.25
0.85
5.46
0.60
0.60
6.20
Max.
2.38
1.10
0.10
1.00
9°
9°
8° page 13/28
DS10197 - Rev 3
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
DPAK (TO-252) type C package information
Figure 25. DPAK (TO-252) recommended footprint (dimensions are in mm)
FP_0068772_26 page 14/28
4.3
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
DPAK (TO-252) packing information
DPAK (TO-252) packing information
Figure 26. DPAK (TO-252) tape outline
T
Top cover tape
10 pitches cumulative tolerance on tape +/- 0.2 mm
P0 D P2
B1
K0
For machine ref. only including draft and radii concentric around B0
B0
A0 P1
User direction of feed
D1
F
E
W
User direction of feed
R
Bending radius
AM08852v1
DS10197 - Rev 3 page 15/28
DS10197 - Rev 3
A
D
B
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
DPAK (TO-252) packing information
Figure 27. DPAK (TO-252) reel outline
T
40mm min. access hole at slot location
C
N
G measured at hub
Full radius
Tape slot in core for tape start
2.5mm min.width
Dim.
E
F
K0
P0
P1
P2
R
T
W
A0
B0
B1
D
D1
AM06038v1
1.5
1.5
1.65
7.4
2.55
3.9
7.9
1.9
40
0.25
15.7
Table 10. DPAK (TO-252) tape and reel mechanical data
Tape Reel mm
Dim.
Min.
6.8
10.4
Max.
7
10.6
12.1
1.6
N
T
D
G
A
B
C
Min.
1.5
12.8
20.2
16.4
50 1.85
7.6
2.75
4.1
8.1
2.1
0.35
16.3
Base qty.
Bulk qty.
mm
Max.
330
13.2
18.4
22.4
2500
2500 page 16/28
4.4
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
TO-220FP package information
TO-220FP package information
Figure 28. TO-220FP package outline
DS10197 - Rev 3
7012510_Rev_13_B page 17/28
DS10197 - Rev 3
Dim.
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
D
E
A
B
F
F1
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
TO-220FP package information
Table 11. TO-220FP package mechanical data mm
Typ.
Min.
4.40
2.50
2.50
0.45
0.75
1.15
1.15
4.95
2.40
10.00
16.00
28.60
9.80
2.90
15.90
9.00
3.00
Max.
4.60
2.70
2.75
0.70
1.00
1.70
1.70
5.20
2.70
10.40
30.60
10.60
3.60
16.40
9.30
3.20
page 18/28
4.5
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
TO-220 type A package information
TO-220 type A package information
Figure 29. TO-220 type A package outline
DS10197 - Rev 3
0015988_typeA_Rev_22 page 19/28
DS10197 - Rev 3
Dim.
E e e1
F
H1
J1
L b1 c
A b
D
D1
L1
L20
L30
øP
Q
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
TO-220 type A package information
Table 12. TO-220 type A package mechanical data mm
Typ.
Min.
4.40
0.61
1.14
0.48
15.25
1.27
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
16.40
28.90
3.75
2.65
3.85
2.95
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
Max.
4.60
0.88
1.55
0.70
15.75
page 20/28
4.6
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
IPAK (TO-251) type A package information
IPAK (TO-251) type A package information
Figure 30. IPAK (TO-251) type A package outline
DS10197 - Rev 3
0068771_IK_typeA_rev14 page 21/28
DS10197 - Rev 3
Dim.
D
E e c c2 e1
H
L
L1
L2
V1
A
A1 b b2 b4
B5
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
IPAK (TO-251) type A package information
Table 13. IPAK (TO-251) type A package mechanical data mm
Typ.
Min.
2.20
0.90
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.00
0.80
0.30
2.28
16.10
0.80
10°
0.60
0.60
6.20
6.60
4.60
Max.
2.40
1.10
0.90
0.95
5.40
9.40
1.20
1.00
page 22/28
4.7
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
IPAK (TO-251) type C package information
IPAK (TO-251) type C package information
Figure 31. IPAK (TO-251) type C package outline
DS10197 - Rev 3
0068771_IK_typeC_rev14 page 23/28
DS10197 - Rev 3
Dim.
c2
D
D1
E
E1 e e1
A
A1 b b2 b4 c
L2
θ1
θ2
H
L
L1
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
IPAK (TO-251) type C package information
Table 14. IPAK (TO-251) type C package mechanical data
Min.
2.20
0.90
0.66
mm
Typ.
2.30
1.00
5.20
6.50
4.60
2.20
4.40
5.23
0.46
0.46
6.00
16.18
9.00
0.80
0.90
3°
1°
5.33
6.10
5.37
6.60
4.78
2.25
4.50
16.48
9.30
1.00
1.08
5°
3°
16.78
9.60
1.20
1.25
7°
5°
5.55
6.70
4.95
2.30
4.60
0.90
5.43
0.59
0.59
6.20
Max.
2.35
1.10
0.79
page 24/28
5
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
Ordering information
Ordering information
Order code
STD9N65M2
STF9N65M2
STP9N65M2
STU9N65M2
Table 15. Order codes
Marking
9N65M2
Package
DPAK
TO-220FP
TO-220
IPAK
Packing
Tape and reel
Tube
DS10197 - Rev 3 page 25/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
Revision history
Date
24-Feb-2014
15-Jul-2014
19-Jun-2019
Version
1
2
3
Table 16. Document revision history
Changes
First release.
– Modified: title, Features and Description
– Modified: Figure 5 and 15
– Updated: Figure 28 and Table 12
– Minor text changes.
Removed maturity status indication from cover page. The document status is production data.
Updated Section 1 Electrical ratings
, Section 2 Electrical characteristics and
2.1 Electrical characteristics (curves)
Minor text changes.
DS10197 - Rev 3 page 26/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
Contents
Contents
DS10197 - Rev 3 page 27/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks . All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
DS10197 - Rev 3 page 28/28
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