STMicroelectronics VN5E025AJ-E Datasheet
STMicroelectronics VN5E025AJ-E is a high-side driver with advanced protective functions, diagnostics, and easy 3/5 V CMOS compatible interface. It can drive various loads, including resistive, inductive, and capacitive types, and is suitable for use as an LED driver. The device offers features such as reverse battery protection, very low stand-by current, inrush current management, overload and short to ground indication, and thermal shutdown indication. With its comprehensive capabilities, the VN5E025AJ-E is ideal for a wide range of automotive applications.
広告
広告
VN5E025AJ-E
Single channel high-side driver with analog current sense for automotive applications
Features
Max supply voltage
Operating voltage range
Max On-State resistance
Current limitation (typ)
Off state supply current
V
CC
V
CC
R
ON
I
LIMH
I
S
1.
Typical value with all loads connected.
41 V
4.5 to 28 V
25 m Ω
60 A
2 µA
(1)
■
■
■
General
– Inrush current active management by power limitation
– Very low stand-by current
– 3.0 V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC european directive
– Very low current sense leakage
Diagnostic functions
– Proportional load current sense
– High current sense precision for wide currents range
– Current sense disable
– Off state openload detection
– Output short to V
CC
detection
– Overload and short to ground (power limitation) indication
– Thermal shutdown indication
Protections
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss of V
CC
– Over-temperature shutdown with autorestart (thermal shutdown)
PowerSSO-12
– Reverse battery protected
– Electrostatic discharge protection
Application
■
■
All types of resistive, inductive and capacitive loads
Suitable as LED driver
Description
The VN5E025AJ-E is a single channel high-side driver manufactured in the ST proprietary
VIPower M0-5 technology and housed in the tiny
PowerSSO-12 package. The VN5E025AJ-E is designed to drive 12 V automotive grounded loads delivering protection, diagnostics and easy
3 V and 5 V CMOS compatible interface with any microcontroller.
The device integrates advanced protective functions such as load current limitation, inrush and overload active management by power limitation, over-temperature shut-off with autorestart and over-voltage active clamp. A dedicated analog current sense pin is associated with every output channel in order to provide Ehnanced diagnostic functions including fast detection of overload and short-circuit to ground through power limitation indication, over-temperature indication, short-circuit to V
CC
diagnosis and ONstate and OFF-state open load detection.
The current sensing and diagnostic feedback of the whole device can be disabled by pulling the
CS_DIS pin high to allow sharing of the external sense resistor with other similar devices
September 2013 Doc ID 13106 Rev 5 1/37 www.st.com
1
Contents
Contents
VN5E025AJ-E
Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Absolue maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 24
Solution 1: resistor in the ground line (RGND only) . . . . . . . . . . . . . . . . 24
GND
) in the ground line . . . . . . . . . . . . . . . . . . . . . . 25
Current sense and diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Short to VCC and OFF state open load detection . . . . . . . . . . . . . . . . . 27
Maximum demagnetization energy (VCC = 13.5V) . . . . . . . . . . . . . . . . . 28
Package and PC board thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
PowerSSO-12 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
ECOPACK® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
PowerSSO-12 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
2/37 Doc ID 13106 Rev 5
VN5E025AJ-E
List of tables
List of tables
CC
<18V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
<18V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Doc ID 13106 Rev 5 3/37
List of figures
List of figures
VN5E025AJ-E
/ I
SENSE
vs I
OUT
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
evolution in Overload or Short to GND. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
PowerSSO-12 thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . 30
Thermal fitting model of a single channel HSD in PowerSSO-12
. . . . . . . . . . . . . . . . . . . 30
tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
4/37 Doc ID 13106 Rev 5
VN5E025AJ-E
1
Block diagram and pin description
Block diagram and pin description
Figure 1.
Block diagram
Signal Clamp
Undervoltage
IN
CS_
DIS
CS
LOGIC
Control & Diagnostic
Power
Clamp
DRIVER
V
ON
Limitation
Over temp.
Current
Limitation
OFF State
Open load
V
SENSEH
Current
Sense
OVERLOAD PROTECTION
(ACTIVE POWER LIMITATION)
V
CC
OUT
GND
Table 1.
Name
Pin function
Function
V
CC
OUTPUT
Battery connection.
GND
INPUT
Power output.
Ground connection. Must be reverse battery protected by an external diode / resistor network.
Voltage controlled input pin with hysteresis, CMOS compatible. Controls output switch state.
CURRENT SENSE Analog current sense pin, delivers a current proportional to the load current.
CS_DIS Active high CMOS compatible pin, to disable the current sense pin.
Doc ID 13106 Rev 5 5/37
Block diagram and pin description
Figure 2.
Configuration diagram (top view)
V cc
GND
INPUT
CURRENT_SENSE
CS_DIS
V cc
1
2
3
4
5
6
12
11
10
9
8
7
TAB = V cc
OUTPUT
OUTPUT
OUTPUT
OUTPUT
OUTPUT
OUTPUT
VN5E025AJ-E
Table 2.
Suggested connections for unused and not connected pins
Connection / pin Current sense N.C.
Output Input
Floating
To ground
Not allowed
Through 1k Ω resistor
X
X
CS_DIS
X
Through 22k Ω resistor
X
Through 10k Ω resistor
X
Through 10k Ω resistor
6/37 Doc ID 13106 Rev 5
VN5E025AJ-E Electrical specifications
Figure 3.
Current and voltage conventions
V
CSD
V
IN
I
CSD
I
IN
V
CC
I
S
V
F
I
OUT
CS_DIS OUTPUT
INPUT
CURRENT SENSE
GND
I
GND
I
SENSE
V
SENSE
V
OUT
V
CC
Note: V
F
= V
OUT
- V
CC
during reverse battery condition.
Stressing the device above the rating listed in the “Absolute maximum ratings” table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to the conditions in table below for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality document.
Table 3.
Symbol
Absolute maximum ratings
Parameter
V
CC
-V
CC
- I
GND
DC supply voltage
Reverse DC supply voltage
DC reverse ground pin current
I
OUT
- I
OUT
I
IN
I
CSD
DC output current
Reverse DC output current
DC input current
DC current sense disable input current
-I
CSENSE
DC reverse CS pin current
V
CSENSE
Current sense maximum voltage
E
MAX
Maximum switching energy (single pulse)
(L=0.8mH; R
L
=0 Ω ; V bat
=13.5V; T jstart
=150ºC; I
OUT
= I limL
(Typ.) )
Value Unit
41
0.3
200
V
V mA
Internally limited A
20 A
-1 to 10 mA
-1 to 10
200
V
CC
-41
+V
CC mA mA
V
V
140 mJ
Doc ID 13106 Rev 5 7/37
Electrical specifications
Table 3.
Symbol
V
ESD
V
ESD
T j
T stg
Absolute maximum ratings (continued)
Parameter
Electrostatic discharge
(Human Body Model: R=1.5K
Ω; C=100pF)
- INPUT
- CURRENT SENSE
- CS_DIS
- OUTPUT
- V
CC
Charge device model (CDM-AEC-Q100-011)
Junction operating temperature
Storage temperature
Table 4.
Symbol
Thermal data
Parameter
R thj-case
R thj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
VN5E025AJ-E
Value Unit
4000
2000
4000
5000
5000
750
-40 to 150
-55 to 150
V
°C
°C
V
V
V
V
V
Max. value
1.4
Unit
°C/W
°C/W
8/37 Doc ID 13106 Rev 5
VN5E025AJ-E Electrical specifications
Values specified in this section are for 8V<V
CC
<28V; -40°C<T j
<150°C, unless otherwise stated.
Table 5.
Symbol
Power section
Parameter
V
CC
V
USD
Operating supply voltage
Undervoltage shutdown
V
USDhyst
Undervoltage shutdown hysteresis
Test conditions Min.
Typ.
Max.
Unit
4.5
13
3.5
28
4.5
V
V
0.5
R
ON
I
S
On state resistance
V clamp
Clamp voltage
Supply current
I
L(off1)
Off state output current
V
F
Output - V
CC
diode voltage
1.
PowerMOS leakage included.
I
OUT
= 3A; T j
=25°C
I
OUT
= 3A; T j
=150°C
I
OUT
= 3A; V
CC
=5V; T j
=25°C
I
S
= 20 mA
Off State; V
CC
=13V; T j
=25°C;
V
IN
=V
OUT
=V
SENSE
=V
CSD
=0V
On State; V
CC
=13V; V
IN
=5V;
I
OUT
= 0A
V
IN
=V
OUT
=0V; V
CC
=13V; T j
=25°C
V
IN
=V
OUT
=0V; V
CC
=13V; T j
=125°C
-I
OUT
= 2A; T j
= 150°C
41
0
0
46
2
(1)
1.5
0.01
3
3
5
25
50
35
52
5
(1)
0.7
V m Ω m
Ω m Ω
V
µA mA
µA
V
Table 6.
Symbol t d(on) t d(off)
Switching characteristics (V
CC
=13V, T j
=25°C)
Parameter Test conditions Min.
Turn-On delay time
Turn-Off delay time
R
L
= 4.3
Ω
(see
)
R
L
= 4.3
Ω (see
(dV
OUT
/dt) on
Turn-On voltage slope
(dV
OUT
/dt) off
Turn-Off voltage slope
R
L
= 4.3
Ω
R
L
= 4.3
Ω
Typ.
15
40
See
See
Max.
Unit
µs
µs
V / µs
V / µs
W
ON
W
OFF
Switching energy losses during t won
R
L
= 4.3
Ω (see
Switching energy losses during t woff
R
L
= 4.3
Ω (see
0.4
0.5
mJ mJ
Doc ID 13106 Rev 5 9/37
Electrical specifications VN5E025AJ-E
Table 7.
Symbol
Logic inputs
Parameter Test conditions
V
V
I
V
I
V
I
I
V
IL
IL
IH
IH
I(hyst)
V
ICL
CSDL
CSDL
CSDH
CSDH
Input low level voltage
Low level input current V
IN
= 0.9V
Input high level voltage
High level input current V
IN
= 2.1V
Input hysteresis voltage
Input clamp voltage
I
IN
= 1mA
I
IN
= -1mA
CS_DIS low level voltage
Low level CS_DIS current
CS_DIS high level voltage
High level CS_DIS current
V
V
CSD
CSD
= 0.9V
= 2.1V
V
CSD(hyst)
CS_DIS hysteresis voltage
V
CSCL
CS_DIS clamp voltage
I
CSD
=1mA
I
CSD
= -1mA
Min.
Typ.
Max.
Unit
0.9
1
2.1
10
V
µA
V
µA
0.25
5.5
7
-0.7
0.9
V
V
V
V
1
2.1
0.25
5.5
-0.7
10
7
µA
V
µA
V
V
V
Table 8.
Symbol
Protection and diagnostics
(1)
Parameter Test conditions Min.
Typ.
Max.
Unit
I limH
DC short circuit current
V
CC
= 13V
5V<V
CC
<28V
43 60 85
85
A
A
I limL
Short circuit current during thermal cycling
T
TSD
T
R
T
RS
Shutdown temperature
Reset temperature
Thermal reset of status
T
HYST
V
DEMAG
Thermal hysteresis
(T
TSD
-T
R
)
Turn-Off output voltage clamp
I
V
CC
OUT
= 13V; T
R
= 2A; V
IN
<T j
<T
TSD
=0; L= 6mH V
150 175
T
RS
+ 1 T
RS
+ 5
135
CC
-41 V
15
7
CC
-46 V
200
CC
-52
A
°C
V
V
ON
Output voltage drop limitation
I
OUT
= 0.1A
T j
= -40°C...150°C
(see
25
1.
To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used together with a proper software strategy. If the device operates under abnormal conditions this software must limit the duration and number of activation cycles.
mV
°C
°C
°C
10/37 Doc ID 13106 Rev 5
VN5E025AJ-E Electrical specifications
Table 9.
Current sense (8V<V
CC
<18V)
Symbol Parameter Test conditions Min.
Typ.
Max.
Unit dK dK dK
I
K
1
2
3
/K
/K
/K
1
(1)
2
(1)
3
(1)
SENSE0
I
LED
K
K
K
K
0
1
2
3
OL
I
I
I
OUT
OUT
OUT
Current sense ratio drift
/I
/I
/I
SENSE
SENSE
SENSE
I
OUT
= 0.05A, V
SENSE
=0.5V,
V
CSD
=0V
T j
= -40°C...150°C
I
OUT
= 0.5A; V
SENSE
=0.5V;
V
CSD
=0V;
T j
= -40°C...150°C
I
OUT
= 2A; V
SENSE
=4V; V
CSD
=0V;
T j
= -40°C...150°C
T j
= 25°C...150°C
I
OUT
=2A; V
SENSE
= 4V;
V
CSD
=0V;
T
J
= -40 °C to 150 °C
I
I
OUT
Current sense ratio drift
OUT
Current sense ratio drift
/I
/I
SENSE
SENSE
I
OUT
= 3A; V
SENSE
=4V; V
CSD
=0V;
T j
= -40°C...150°C
T j
=25°C...150°C
I
OUT
=3 A; V
SENSE
= 4 V;
V
CSD
=0V;
T
J
= -40 °C to 150 °C
I
OUT
= 10A; V
SENSE
=4V; V
CSD
=0V;
T j
= -40°C...150°C
T j
=25°C...150°C
I
OUT
= 10 A; V
SENSE
= 4 V;
V
CSD
=0V;
T
J
= -40 °C to 150 °C
I
OUT
=0A; V
SENSE
=0V;
V
CSD
=5V; V
IN
=0V; T j
=-40°C...150°C
V
CSD
=0V; V
IN
=5V; T j
=-40°C...150°C Analog sense leakage current
I
OUT
=2A; V
SENSE
=0V;
V
CSD
=5V; V
IN
=5V; T j
=-40°C...150°C
Open load ON state current detection threshold
V
IN
= 5V, 8V<V
CC
<18V
I
SENSE
= 5 µA
1370 3180 4930
1990 3050 4120
2100
2220
-10
2300
2420
-7
2690
2700
-4
0
0
0
5
2860
2860
2850
2850
2830
2830
3840
3500
10
3520
3300
7
3060
3020
4
1
2
1
30
%
%
%
µA
µA
µA mA
I
V
SENSE
SENSEH
(2)
Max analog sense output voltage
I
OUT
= 3A; V
CSD
= 0V
V
SENSEH
(2)
Analog sense output voltage in fault condition
V
CC
= 13V; R
SENSE
= 3.9K
Ω
Analog sense output current in fault condition
V
CC
= 13V; V
SENSE
= 5V
5
8
9
V mA
Doc ID 13106 Rev 5 11/37
Electrical specifications VN5E025AJ-E
Table 9.
Current sense (8V<V
CC
<18V) (continued)
Symbol Parameter Test conditions Min.
Typ.
Max.
Unit t
DSENSE1H
Delay response time from falling edge of
CS_DIS pin
V
SENSE
<4V, 0.5<Iout<10A
I
SENSE
=90% of I
SENSE max
t
DSENSE1L
Delay response time from rising edge of
CS_DIS pin
V
SENSE
<4V, 0.5<Iout<10A
I
SENSE
=10% of I
SENSE max
40
5
100
20 t
DSENSE2H
Delay response time from rising edge of
INPUT pin
V
SENSE
<4V, 0.5<Iout<10A
I
SENSE
=90% of I
SENSE max
Δ t
DSENSE2H
Delay response time between rising edge of output current and rising edge of current sense
V
SENSE
< 4V,
I
SENSE
= 90% of I
SENSEMAX,
I
OUT
= 90% of I
OUTMAX
I
OUTMAX
= 3A (see
) t
DSENSE2L
Delay response time from falling edge of
INPUT pin
V
SENSE
<4V, 0.5<Iout<10A
I
SENSE
=10% of I
SENSE max
80
80
1.
Parameter guaranteed by design, it is not tested.
2.
Fault condition includes: power limitation, overtemperature and open load OFF state detection.
300
110
250
µs
Table 10.
Openload detection (8V<V
CC
<18V)
Symbol Parameter Test conditions
V
OL t
DSTKON
I
L(off2)r
I
L(off2)f td_vol
Min.
Typ.
Max.
Unit
Openload Off state voltage detection threshold
V
IN
= 0V
Output short circuit to
V
CC detection delay at turn off
Off state output current at
V
OUT
= 4V
V
IN
=0V; V
SENSE
=0V
V
OUT rising from 0V to 4V
Off state output current at
V
OUT
= 2V
V
IN
=0V; V
SENSE
=V
SENSEH
V
OUT falling from V
CC
to 2V
Delay response from output rising edge to
V
SENSE rising edge in open load
V
OUT
= 4 V; V
V
SENSE
IN
= 0V
= 90% of V
SENSEH
2
180
-120
-50
4
1200
0
90
20
V
µs
µA
µA
µs
12/37 Doc ID 13106 Rev 5
VN5E025AJ-E
Figure 4.
Current sense delay characteristics
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT t
DSENSE2H t
DSENSE1L
Electrical specifications t
DSENSE1H t
DSENSE2L
Figure 5.
Openload Off-state delay timing
OUTPUT STUCK TO V
CC
V
IN
V
OUT
> V
OL
V
SENSEH
V
CS t
DSTKON
Figure 6.
Switching characteristics
V
OUT dV
OUT
/dt
(on) t
Won
80% t r
10%
INPUT t d(on) t d(off) t
Woff
90% t f dV
OUT
/dt
(off) t t
Doc ID 13106 Rev 5 13/37
Electrical specifications VN5E025AJ-E
Figure 7.
Delay response time between rising edge of ouput current and rising edge of current sense (CS enabled)
V
IN
Δ t
DSENSE2H t
I
OUT
90% I
OUTMAX
I
OUTMAX t
I
SENSE I
SENSEMAX
90% I
SENSEMAX t
Figure 8.
Output voltage drop limitation
V cc
-V out
T j
=150 o
C
T j
=25 o
C
T j
=-40 o
C
V on
I out
V on
/R on(T)
14/37 Doc ID 13106 Rev 5
VN5E025AJ-E
Figure 9.
I
OUT
/ I
SENSE
vs I
OUT
I out
/ I sense
4200
3700 max Tj = -40 °C to 150 °C
Electrical specifications
3200 max Tj = 25 °C to 150 °C
2700 min Tj = 25 °C to 150 °C
2200 min Tj = -40 °C to 150 °C typical value
1700
2 3 4 5 6
I
OUT
(A)
7 8
Figure 10.
Maximum current sense ratio drift vs load current dk/k(%)
10
9 10
5
0
-5
Note:
-10
2 3 4 5 6
I
OUT
(A)
7
Parameter guaranteed by design; it is not tested.
8 9 10
Doc ID 13106 Rev 5 15/37
Electrical specifications VN5E025AJ-E
Table 11.
Truth table
Conditions
Normal operation
Overtemperature
Undervoltage
Overload
Input
L
H
L
H
L
H
H
H
Output
L
H
L
L
L
L
X
(no power limitation)
Cycling
(power limitation)
L
L
Sense (V
CSD
=0V)
(1)
0
Nominal
0
V
SENSEH
0
0
Nominal
V
SENSEH
Short circuit to GND
(power limitation)
Open load OFF state
(with external pull-up)
Short circuit to V
CC
(external pull-up disconnected)
L
H
L
L
H
H
H
H
V
V
V
0
SENSEH
SENSEH
SENSEH
< Nominal
Negative output voltage clamp
L L 0
1.
If the V
CSD
is high, the SENSE output is at a high impedance, its potential depends on leakage currents and external circuit.
16/37 Doc ID 13106 Rev 5
VN5E025AJ-E Electrical specifications
Table 12.
Electrical transient requirements
Test levels
(1)
ISO 7637-2:
2004(E)
Test pulse
Number of pulses or test times
1
2a
3a
3b
4
5b
(2)
III
-75V
+37V
-100V
+75V
-6V
+65V
IV
-100V
+50V
-150V
+100V
-7V
+87V
5000 pulses
5000 pulses
1h
1h
1 pulse
1 pulse
Burst cycle/pulse repetition time
Min.
0.5s
0.2s
90ms
90ms
Max.
5s
5s
100ms
100ms
Delays and
Impedance
2 ms, 10 Ω
50µs, 2 Ω
0.1µs, 50
Ω
0.1µs, 50 Ω
100ms, 0.01
Ω
400ms, 2 Ω
ISO 7637-2:
2004E
Test pulse
1
2a
3a
3b
4
III
C
C
C
C
C
C
Test level results
VI
C
C
C
C
C
C
Class Contents
C
E
All functions of the device performed as designed after exposure to disturbance.
One or more functions of the device did not perform as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device.
1.
The above test levels must be considered referred to V
CC
= 13.5V except for pulse 5b.
2.
Valid in case of external load dump clamp: 40V maximum referred to ground.
Doc ID 13106 Rev 5 17/37
Electrical specifications
2.4 Waveforms
Figure 11.
Normal operation
Normal operation
18/37
INPUT
I
OUT
V
SENSE
Nominal load Nominal load
V
CS_DIS
Figure 12.
Overload or Short to GND
Overload or Short to GND
INPUT
I
LimH
>
I
OUT
Power Limitation
I
LimL
>
Thermal cycling
V
SENSE
V
CS_DIS
Doc ID 13106 Rev 5
VN5E025AJ-E
VN5E025AJ-E
Figure 13.
Intermittent Overload
Intermittent Overload
Electrical specifications
INPUT
I
LimH
>
I
OUT
V
SENSEH
>
V
SENSE
Overload
I
LimL
>
V
CS_DIS
Figure 14.
OFF-State Open Load with external circuitry
OFF-State Open Load with external circutry
Nominal load
INPUT
V
OUT
I
OUT
V
SENSE
V
CS_DIS
V
OL
V
OUT
V
SENSEH
> t
DSTK(on)
> V
OL
Doc ID 13106 Rev 5 19/37
Electrical specifications
Figure 15.
Short to V
CC
Resistive
Short to V
CC
Short to V
CC
Hard
Short to V
CC
VN5E025AJ-E
V
OUT
I
OUT
V
OL
V
OUT
> V
OL t
DSTK(on) t
DSTK(on)
V
CS_DIS
Figure 16.
T
J
evolution in Overload or Short to GND
T
J
evolution in
Overload or Short to GND
INPUT
Self-limitation of fast thermal transients T
TSD
T
R
T
J
I
LimH
>
T
J_START
Power Limitation
T
HYST
< I
LimL
I
OUT
20/37 Doc ID 13106 Rev 5
VN5E025AJ-E Electrical specifications
Figure 17.
Off state output current
Iloff (nA)
1500
1200
Off State
Vcc=13V
Vin=Vout=0V
900
600
300
0
-50 -25 0 25 50 75
Tc (°C)
100 125 150 175
Figure 19.
Input clamp level
Vicl (V)
7 lin=1mA
6,8
6,6
6,4
6,2
6
-50 -25 0 25 50 75
Tc (°C)
100 125 150 175
Figure 21.
Input high level
Vih (V)
4
3,5
3
2,5
2
1,5
1
0,5
0
-50 -25 0 25 50 75
Tc (°C)
100 125 150 175
Figure 18.
High level input current
Iih (µA)
5
4,5
4
3,5
3
Vin=2.1V
2,5
2
1,5
1
-50 -25 0 25 50 75
Tc (°C)
100 125 150 175
Figure 20.
Input low level
Vil (V)
2
1,8
1,6
1,4
1,2
1
0,8
0,6
0,4
0,2
0
-50 -25 0 25 50 75
Tc (°C)
100 125 150 175
Figure 22.
Input hysteresis voltage
Vihyst (V)
1
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0
-50 -25 0 25 50 75
Tc (°C)
100 125 150 175
Doc ID 13106 Rev 5 21/37
Electrical specifications
Figure 23.
On state resistance vs T case
Ron (mOhm)
80
60
Iout= 3A
Vcc=13V
40
20
0
-50 -25 0 25 50 75
Tc (°C)
100 125 150 175
Figure 25.
Undervoltage shutdown
Vusd (V)
8
7
6
5
4
3
2
1
0
-50 -25 0 25 50 75
Tc (°C)
100 125 150 175
Figure 27.
I
LIMH
vs T case
Ilimh (A)
80
Vcc=13V
70
60
50
40
-50 -25 0 25 50 75
Tc (°C)
100 125 150 175
VN5E025AJ-E
Figure 24.
On state resistance vs V
CC
Ron (mOhm)
60
50
40
30
20
10
Tc=150°C
Tc=125°C
Tc=25°C
Tc=-40°C
0
0 5 10 15 20
Vcc (V)
25 30 35 40
Figure 26.
Turn-On voltage slope
(dVout/dt )On (V/ms)
700
600
500
400
300
200
Vcc=13V
RI=4.3 Ohm
100
0
-50 -25 0 25 50 75
Tc (°C)
100 125 150 175
Figure 28.
Turn-Off voltage slope
(dVout/dt )Off (V/ms)
400
350
300
250
200
150
100
50
0
-50 -25 0
Vcc=13V
RI= 4.3 Ohm
25 50 75
Tc (°C)
100 125 150 175
22/37 Doc ID 13106 Rev 5
VN5E025AJ-E
Figure 29.
CS_DIS high level voltage
Vcsdh (V)
4
3,5
3
2,5
2
1,5
1
0,5
0
-50 -25 0 25 50 75
Tc (°C)
100 125 150 175
Figure 31.
CS_DIS low level voltage
Vcsdl (V)
3
2,5
2
1,5
1
0,5
0
-50 -25 0 25 50 75
Tc (°C)
100 125 150 175
Electrical specifications
Figure 30.
CS_DIS clamp voltage
Vcsdcl(V)
10
9
8
7
6
5
4
3
2
-50 -25 0
Iin = 1 mA
25 50 75
Tc (°C)
100 125 150 175
Doc ID 13106 Rev 5 23/37
Application information VN5E025AJ-E
Figure 32.
Application schematic
+5V
V
CC
R prot CS_DIS
Μ CU
R prot
R prot
IINPUT
R
CURRENT SENSE
SENSE
GND
V
GND
R
GND
D
GND
OUTPUT
C ext
D ld
3.1
3.1.1
GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against reverse battery.
Solution 1: resistor in the ground line (R
GND
only)
This can be used with any type of load.
The following show how to dimension the R
GND resistor:
1.
R
GND
≤
600mV / (I
S(on)max
)
2. R
GND
≥ (− V
CC
) / (-I
GND
) where -I
GND
is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device datasheet.
Power dissipation in R
GND
(when V
CC
<0 during reverse battery situations) is:
P
D
= (-V
CC
)
2
/R
GND
This resistor can be shared amongst several different HSDs. Please note that the value of this resistor should be calculated with formula (1) where I
S(on)max
becomes the sum of the maximum on-state currents of the different devices.
Please note that, if the microprocessor ground is not shared by the device ground, then the
R
GND produces a shift (I
S(on)max
* R
GND
) in the input thresholds and the status output
24/37 Doc ID 13106 Rev 5
VN5E025AJ-E
3.1.2
Application information values. This shift varies depending on how many devices are ON in the case of several high side drivers sharing the same R
GND
.
If the calculated power dissipation requires the use of a large resistor, or several devices have to share the same resistor, then ST suggests using solution 2 below.
Solution 2: diode (D
GND
) in the ground line
Note that a resistor (R
GND
=1k
Ω
) should be inserted in parallel to D an inductive load.
GND
if the device drives
This small signal diode can be safely shared amongst several different HSDs. Also in this case, the presence of the ground network produces a shift (
≈
600mV) in the input threshold and in the status output values if the microprocessor ground is not common to the device ground. This shift not varies if more than one HSD shares the same diode/resistor network.
3.2 Load dump protection
D ld
is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
V
CC
max DC rating. The same applies if the device is subject to transients on the V
CC
line that are greater than the ones shown in the ISO 7637-2: 2004(E) table.
3.3 MCU I/O protection
If a ground protection network is used and negative transients are present on the V
CC
line, the control pins are pulled negative. ST suggests to insert a resistor (R prot
) in line to prevent the µC I/O pins from latching up.
The value of these resistors is a compromise between the leakage current of µC and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of µC
I/Os:
-V
CCpeak
/I latchup
≤
R prot
≤
(V
OH
μ
C
-V
IH
-V
GND
) / I
IHmax
Calculation example:
For V
CCpeak
= - 100V and I latchup
≥
20mA; V
OHµC
≥
4.5V
5k
Ω ≤
R prot
≤
180k
Ω
Recommended values: R prot
=10k
Ω
, C
EXT
=10nF.
Doc ID 13106 Rev 5 25/37
Application information
3.4
VN5E025AJ-E
Current sense and diagnostic
The current sense pin performs a double function (see
Figure 33: Current sense and diagnostic
):
● Current mirror of the load current in normal operation, delivering a current proportional to the load one according to a know ratio K
X
.
The current I
SENSE
can be easily converted to a voltage V
SENSE
by means of an external resistor R
SENSE
. Linearity between I
OUT
and V
SENSE
is ensured up to 5V minimum (see parameter V
SENSE
in Table 9: Current sense (8V<V
). The current sense accuracy depends on the output current (refer to current sense electrical characteristics
● Diagnostic flag in fault conditions, delivering a fixed voltage V
SENSEH
up to a maximum current I
SENSEH
in case of the following fault conditions (refer to
):
– Power limitation activation
– Over-temperature
– Short to V
CC
in OFF state
– Open load in OFF state with additional external components.
A logic level high on CS_DIS pin sets at the same time all the current sense pins of the device in a high impedance state, thus disabling the current monitoring and diagnostic detection. This feature allows multiplexing of the microcontroller analog inputs by sharing of sense resistance and ADC line among different devices.
Figure 33.
Current sense and diagnostic
V
PU
V
BAT
I
OUT
/K
X
CS_DIS
41V
I
SENSEH
R
PROT
To uC ADC
R
SENSE
V
SENSEH
CURRENT
SENSEn
V
SENSE
V
CC
Main MOSn
PU_CMD
Overtemperature
OL OFF
Pwr_Lim
INPUTn
+
-
R
PU
V
OL
OUTn
I
Loff2r
I
Loff2f
GND
R
PD
Load
26/37 Doc ID 13106 Rev 5
VN5E025AJ-E
3.4.1
Application information
Short to V
CC
and OFF state open load detection
Short to V
CC
A short circuit between V
CC and output is indicated by the relevant current sense pin set to
V
SENSEH
during the device off state. Small or no current is delivered by the current sense during the on state depending on the nature of the short circuit.
OFF state open load with external circuitry
Detection of an open load in off mode requires an external pull-up resistor R
PU
connecting the output to a positive supply voltage V
PU
.
It is preferable V
PU
to be switched off during the module stand-by mode in order to avoid the overall stand-by current consumption to increase in normal conditions, i.e. when load is connected.
An external pull down resistor R
PD
connected between output and GND is mandatory to
).
R
PD
must be selected in order to ensure V circuitry:
OUT
< V
OLmin
unless pulled up by the external
V
OUT
Pull
− up _ OFF
=
R
PD
⋅
I
L ( off 2 ) f
<
V
OL min
=
2 V
R
PD
≤ 22 K Ω is recommended.
For proper open load detection in off state, the external pull-up resistor must be selected according to the following formula:
V
OUT
Pull
− up _ ON
=
R
PD
⋅
V
PU
−
R
PU
R
PU
⋅
R
PD
+
R
PD
⋅
I
L ( off 2 ) r
>
V
OL max
=
4 V
For the values of V
OLmin
,V
OLmax
,
I
L(off2)r and I
L(off2)f
see Table 10: Openload detection
Doc ID 13106 Rev 5 27/37
Application information
3.5 Maximum demagnetization energy (V
CC
= 13.5V)
Figure 34.
Maximum turn off current versus inductance
100
VN5E025AJ-E
10
B
C
A
1
0,1 1 L (mH) 10 100
A: T jstart
= 150°C single pulse
B: T jstart
= 100°C repetitive pulse
C: T jstart
= 125°C repetitive pulse
V
IN
, I
L
Demagnetization Demagnetization Demagnetization
Note: t
Values are generated with R
L
= 0 Ω.
In case of repetitive pulses, T jstart
(at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves A and B.
28/37 Doc ID 13106 Rev 5
VN5E025AJ-E
4
Package and PC board thermal data
Package and PC board thermal data
4.1 PowerSSO-12 thermal data
Figure 35.
PowerSSO-12 PC board
Note: Layout condition of R th
and Z th
measurements (PCB: Double layer, Thermal Vias, FR4 area= 77mm x 86mm, PCB thickness=1.6mm, Cu thickness=70µm (front and back side),
Copper areas: from minimum pad lay-out to 8cm
2
).
Figure 36.
R thj-amb
vs PCB copper area in open box free air condition
RTHj _amb( ° C/ W)
65
60
55
50
45
40
35
30
0 2 4 6
PCB Cu heat sink area ( cm^ 2)
8 10
Doc ID 13106 Rev 5 29/37
Package and PC board thermal data VN5E025AJ-E
Figure 37.
PowerSSO-12 thermal impedance junction ambient single pulse
ZTH ( ° C/ W)
100
Footprint
2 cm
2
8 cm
2
10
1
0,1
0,0001 0,001 0,01 0,1
Time ( s)
1 10 100 1000
Figure 38.
Thermal fitting model of a single channel HSD in PowerSSO-12
30/37
Equation 1: pulse calculation formula:
Z
T H
δ where
= R
TH
⋅
δ
= t p
⁄
δ + Z
T Htp
( 1 – δ )
T
Doc ID 13106 Rev 5
VN5E025AJ-E
Table 13.
Thermal parameter
Area/island (cm
2
)
R1 (°C/W)
R2 (°C/W)
R3 (°C/W)
R4 (°C/W)
R5 (°C/W)
R6 (°C/W)
C1 (W.s/°C)
C2 (W.s/°C)
C3 (W.s/°C)
C4 (W.s/°C)
C5 (W.s/°C)
C6 (W.s/°C)
Footprint
0.001
0.003
0.05
0.2
0.27
3
4
8
0.3
1.3
22
26
Package and PC board thermal data
2
0.1
0.8
6
8
15
20
8
0.1
1
9
7
10
15
Doc ID 13106 Rev 5 31/37
Package and packing information
5 Package and packing information
VN5E025AJ-E
5.1 ECOPACK
®
packages
In order to meet environmental requirements, ST offers these devices in ECOPACK
® packages. ECOPACK
®
packages are lead-free. The category of Second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard
JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label.
ECOPACK is an ST trademark. ECOPACK specifications are available at www.st.com.
5.2 PowerSSO-12 mechanical data
Figure 39.
PowerSSO-12 package dimensions
32/37 Doc ID 13106 Rev 5
VN5E025AJ-E
Table 14.
PowerSSO-12 mechanical data
Dimension
C
D
E e
A
A1
A2
B
L k
X
H h
Y ddd
5.800
0.250
0.400
0º
1.900
3.600
Min.
1.250
0.000
1.100
0.230
0.190
4.800
3.800
Package and packing information
Millimeters
Typ.
0.800
Max.
1.620
0.100
1.650
0.410
0.250
5.000
4.000
6.200
0.500
1.270
8º
2.500
4.200
0.100
Doc ID 13106 Rev 5 33/37
Package and packing information VN5E025AJ-E
Figure 40.
PowerSSO-12 tube shipment (no suffix)
B
A
C Base Q.ty
Bulk Q.ty
Tube length (± 0.5)
A
B
C (± 0.1)
All dimensions are in mm.
100
2000
532
1.85
6.75
0.6
Figure 41.
PowerSSO-12 tape and reel shipment (suffix “TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
G (+ 2 / -0)
N (min)
T (max)
2500
2500
330
1.5
13
20.2
12.4
60
18.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
W
P0 (± 0.1)
P
D (± 0.05)
D1 (min)
F (± 0.1)
K (max)
P1 (± 0.1)
1.5
5.5
4.5
2
12
4
8
1.5
All dimensions are in mm.
End
Top cover tape
No components Components
500mm min
No components
Empty components pockets
500mm min saled with cover tape.
Start
User direction of feed
34/37 Doc ID 13106 Rev 5
VN5E025AJ-E Order codes
Table 15.
Device summary
Package
PowerSSO-12
Tube
Root part number 2
Order codes
Tape and reel
VN5E025AJTR-E
Doc ID 13106 Rev 5 35/37
Revision history VN5E025AJ-E
Table 16.
Document revision history
Date Revision
24-Jan-2006
15-Jan-2007
01-Apr-2008
10-May-2010
20-Sep-2013
1
2
3
4
5
Changes
Initial release.
Reformatted.
Section 4.1 restructured.
Document reformatted and restructured.
Changed max. operating voltage value from 36V to 28V.
Changed Description on cover page.
Table 6.: Switching characteristics (VCC=13V, Tj=25°C) : added
typical values.
Updated
– changed V
CC
max. value from 16 V to 18 V
– added K, dK/K values
– added I
OL
parameter
– changed V SENSEH typical value from 9 V to 8 V.
– changed I SENSEH typical value from 8 mA to 9 mA.
– changed t DSENSE1H typical value from 50 µs to 40 µs.
– changed t DSENSE2L typical value from 100 µs to 80 µs.
– changed t
DSENSE2H typical value from 70 µs to 80 µs
– added Δ t
DSENSE2H parameter
Updated
Table 10.: Openload detection (8V<V
– added I
L(off2)r
, I
L(off2)f and td_vol parameters
Added
.
Added
Figure 10.: Maximum current sense ratio drift vs load current
Added
Added
Section 2.5: Electrical characteristics curves .
Updated
Section 3: Application information :
– added Section 3.4: Current sense and diagnostic
Added
Section 4.1: PowerSSO-12 thermal data
.
Updated
Updated disclaimer.
36/37 Doc ID 13106 Rev 5
VN5E025AJ-E
Please Read Carefully:
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DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.
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Doc ID 13106 Rev 5 37/37
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