STB20N95DK5
N-channel 950 V, 0.275 Ω typ., 18 A, MDmesh™ DK5
Power MOSFET in a D²PAK package
Datasheet - preliminary data
Features
TAB
2
3
Prerelease product(s)
1
D²PAK
Figure 1: Internal schematic diagram
Order code
VDS
RDS(on) max.
ID
STB20N95DK5
950 V
0.330 Ω
18 A
Fast-recovery body diode
Best RDS(on) x area
Low gate charge, input capacitance and
resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Applications
Switching applications
Description
D(2, TAB)
This very high voltage N-channel Power
MOSFET is part of the MDmesh™ DK5 fast
recovery diode series. The MDmesh™ DK5
combines very low recovery charge (Qrr) and
recovery time (trr) with an excellent improvement
in RDS(on) * area and one of the most effective
switching behaviors, ideal for half bridge and full
bridge converters.
G(1)
S(3)
AM01475v1_noZen
Table 1: Device summary
Order code
Marking
Package
Packing
STB20N95DK5
20N95DK5
D²PAK
Tape and reel
December 2017
DocID031343 Rev 1
This is preliminary information on a new product now in development
or undergoing evaluation. Details are subject to change without notice.
1/16
www.st.com
Contents
STB20N95DK5
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ..................................................................................... 9
4
Package information ..................................................................... 10
D²PAK (TO-263) type A2 package information ............................... 10
4.2
D²PAK (TO-263) packing information .............................................. 13
Revision history ............................................................................ 15
Prerelease product(s)
5
4.1
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STB20N95DK5
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
VGS
Parameter
Value
Unit
Gate-source voltage
±30
V
ID
Drain current (continuous) at TC = 25 °C
18
V
ID
Drain current (continuous) at TC = 100 °C
11
A
IDM(1)
Drain current (pulsed)
72
A
PTOT
Total dissipation at TC = 25 °C
250
W
dv/dt(2)
Peak diode recovery voltage slope
50
V/ns
dv/dt(3)
MOSFET dv/dt ruggedness
50
V/ns
Tstg
Storage temperature range
-55 to 150
°C
Value
Unit
Thermal resistance junction-case
0.5
°C/W
Thermal resistance junction-pcb
30
°C/W
Value
Unit
6
A
520
mJ
Tj
Operating junction temperature range
Notes:
Prerelease product(s)
(1)Pulse
(2)I
SD
(3)V
width limited by safe operating area
≤ 8.5 A, di/dt ≤ 400 A/μs, VDS peak ≤ V(BR)DSS, VDD = 475 V
DS
≤ 760 V
Table 3: Avalanche characteristics
Symbol
Rthj-case
Rthj-pcb
(1)
Parameter
Notes:
(1)When
mounted on 1 inch² FR-4 board, 2 Oz Cu.
Table 4: Thermal data
Symbol
Parameter
IAR
Maximum current during repetitive or single pulse
avalanche
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR ,VDD = 50 V)
DocID031343 Rev 1
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Electrical characteristics
2
STB20N95DK5
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5: On/off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0 V
Min.
Typ.
Max.
950
Unit
V
VGS = 0 V, VDS = 950 V
1
µA
VGS = 0 V, VDS = 950 V,
TC= 125 °C (1)
100
µA
Gate source leakage
current
VDS = 0 V, VGS = ±20 V
±10
µA
VGS(th)
Gate threshold voltage
VDD = VGS, ID = 100 µA
4
5
V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 9 A
0.275
0.330
Ω
Min.
Typ.
Max.
Unit
-
1600
-
pF
-
76
-
pF
-
5
-
pF
-
169
-
pF
-
60
-
pF
IDSS
IGSS
Zero gate voltage drain
current
3
Prerelease product(s)
Notes:
(1)Defined
by design, not subject to production test
Table 6: Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Co(tr)(1)
Co(er)(2)
Test conditions
VDS = 100 V, f = 1 MHz,
VGS= 0 V
Time- related equivalent
capacitance
Energy-related equivalent
capacitance
VGS = 0 V, VDS= 0 to 760 V
Rg
Intrinsic gate resistance
f =1 MHz, ID= 0 A
-
4
-
Ω
Qg
Total gate charge
-
50.7
-
nC
Qgs
Gate source charge
-
7.8
-
nC
Qgd
Gate drain charge
VDD = 760 V, ID = 18 A,
VGS = 0 to 10 V
(see Figure 16: "Test circuit for
gate charge behavior")
-
34.2
-
nC
Notes:
(1)C
o(tr)
is defined as the constant equivalent capacitance giving the same charging time as Coss when V DS
increases from 0 to 80% VDSS.
(2)C
o(er)
is defined as the constant equivalent capacitance giving the same stored energy as Coss when V DS
increases from 0 to 80% VDSS.
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STB20N95DK5
Electrical characteristics
Table 7: Switching times
Symbol
td(on)
Parameter
tr
Turn-on delay time
Rise time
td(off)
Turn-off delay time
Fall time
tf
Test conditions
Min.
Typ.
Max.
Unit
VDS = 475 V, ID= 9 A, RG = 4.7 Ω,
VGS = 10 V
(see Figure 15: "Test circuit for
resistive load switching times" and
Figure 20: "Switching time
waveform")
-
23
-
ns
-
23
-
ns
-
74
-
ns
-
25.4
-
ns
Min.
Typ.
Max.
Unit
Table 8: Source-drain diode
Prerelease product(s)
Symbol
Parameter
Test conditions
ISD
Source-drain current
-
18
A
ISDM(1)
Source-drain current
(pulsed)
-
72
A
VSD(2)
Forward on voltage
ISD = 18 A, VGS = 0 V
-
1.5
V
trr
Reverse recovery time
-
150
ns
Qrr
Reverse recovery
charge
-
1
µC
IRRM
Reverse recovery
current
ISD = 9 A, di/dt = 100 A/µs,
VDD = 60 V
(see Figure 17: "Test circuit for
inductive load switching and diode
recovery times")
-
13.5
A
ISD = 9 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 17: "Test circuit for
inductive load switching and diode
recovery times")
-
264
ns
-
2.9
µC
-
22
A
trr
Reverse recovery time
Qrr
Reverse recovery
charge
IRRM
Reverse recovery
current
Notes:
(1)Pulse
width limited by safe operating area
(2)Pulsed:
pulse duration = 300 µs, duty cycle 1.5%.
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Electrical characteristics
Prerelease product(s)
2.1
STB20N95DK5
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
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STB20N95DK5
Electrical characteristics
Figure 8: Capacitance variations
Figure 9: Output capacitance stored energy
Figure 10: Normalized gate threshold voltage vs
temperature
Figure 11: Normalized on-resistance vs
temperature
Figure 12: Normalized V(BR)DSS vs temperature
Figure 13: Source-drain diode forward
characteristics
DocID031343 Rev 1
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Electrical characteristics
STB20N95DK5
Prerelease product(s)
Figure 14: Maximum avalanche energy vs starting TJ
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STB20N95DK5
Prerelease product(s)
3
Test circuits
Test circuits
Figure 15: Test circuit for resistive load
switching times
Figure 16: Test circuit for gate charge
behavior
Figure 17: Test circuit for inductive load
switching and diode recovery times
Figure 18: Unclamped inductive load test
circuit
Figure 19: Unclamped inductive waveform
Figure 20: Switching time waveform
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Package information
4
STB20N95DK5
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1
D²PAK (TO-263) type A2 package information
Prerelease product(s)
Figure 21: D²PAK (TO-263) type A2 package outline
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STB20N95DK5
Package information
Table 9: D²PAK (TO-263) type A2 package mechanical data
mm
Dim.
Min.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10.00
E1
8.70
8.90
9.10
E2
7.30
7.50
7.70
e
Prerelease product(s)
Typ.
10.40
2.54
e1
4.88
5.28
H
15.00
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
0.40
0°
DocID031343 Rev 1
8°
11/16
Package information
STB20N95DK5
Prerelease product(s)
Figure 22: D²PAK (TO-263) recommended footprint (dimensions are in mm)
12/16
DocID031343 Rev 1
STB20N95DK5
4.2
Package information
D²PAK (TO-263) packing information
Prerelease product(s)
Figure 23: D²PAK tape outline
DocID031343 Rev 1
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Package information
STB20N95DK5
Prerelease product(s)
Figure 24: D²PAK reel outline
Table 10: D²PAK tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
14/16
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000
R
50
T
0.25
0.35
W
23.7
24.3
DocID031343 Rev 1
Min.
Max.
330
13.2
26.4
30.4
STB20N95DK5
5
Revision history
Revision history
Table 11: Document revision history
Revision
01-Dec-2017
1
Changes
Initial release
Prerelease product(s)
Date
DocID031343 Rev 1
15/16
STB20N95DK5
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