STWA78N65M5AG
Automotive Nchannel 650 V, 0.024 Ω typ., 69 A MDmesh M5
Power MOSFET in a TO-247 long leads package
Datasheet - preliminary data
Figure 1: Internal schematic diagram
D(2)
G(1)
Features
Order code
V
DS
@
T
Jmax
R
DS(on) max I
D
STWA78N65M5AG 710 V
0.032 Ω
Designed for automotive applications
Extremely low R
DS(on)
Low gate charge and input capacitance
Excellent switching performance
100% avalanche tested
69 A
Applications
Switching applications
Description
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the wellknown PowerMESH™ horizontal layout. The resulting product offers extremely low onresistance, making it particularly suitable for applications requiring high power and superior efficiency.
S(3)
Order code
STWA78N65M5AG
AM01475v1_noZen_no Tab
Table 1: Device summary
Marking Package
78N65M5 TO-247 long leads
Packaging
Tube
August 2017 DocID030923 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/13 www.st.com
Contents
Contents
STWA78N65M5AG
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 9
4 Package information ..................................................................... 10
4.1
TO-247 long leads package information ......................................... 10
5 Revision history ............................................................................ 12
2/13 DocID030923 Rev 1
STWA78N65M5AG
1 Electrical ratings
Symbol
V
GS
I
D
I
D
I
DM
(1)
P
TOT
dv/dt (2) dv/dt (3)
T stg
T j
Table 2: Absolute maximum ratings
Parameter
Gate- source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
Notes:
(1)
Pulse width limited by safe operating area
(2)
I
SD
≤ 69 A, di/dt = 400 A/µs, V
DS(peak)
< V
(BR)DSS
, V
DD
= 400 V
(3)
V
DS
≤ 520 V
Symbol
Table 3: Thermal data
Parameter
R thj-case
Thermal resistance junction-case
R thj-amb
Thermal resistance junction-ambient
Symbol
I
AR
E
AS
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive
(pulse width limited by T jmax
)
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Electrical ratings
Value
±25
69
41.5
276
450
15
50
- 55 to 150
Unit
V
A
A
A
W
V/ns
V/ns
°C
Value
0.28
50
Unit
°C/W
°C/W
Value
15
2000
Unit
A mJ
DocID030923 Rev 1 3/13
Electrical characteristics
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Symbol Parameter
Table 5: On /off states
Test conditions
V
(BR)DSS
Drain-source breakdown voltage
I
D
= 1 mA, V
GS
= 0 V
I
DSS
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 650 V
V
GS
= 0 V, V
DS
= 650 V,
T
C
=125 °C (1)
I
GSS
Gate-body leakage current
V
GS(th)
Gate threshold voltage
R
DS(on)
Static drain-source on- resistance
V
DS
= 0 V, V
GS
= ±25 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 34.5 A
STWA78N65M5AG
Min. Typ. Max. Unit
650 V
1 µA
100 µA
±100 nA
4 5 V
0.024 0.032
Ω
3
Notes:
(1)
Defined by design, not subject to production test
Symbol Parameter
Table 6: Dynamic
Test conditions
C iss
C oss
C rss
C
o(tr)
(1)
C
o(er)
(2)
R
G
Q g
Q gs
Q gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent capacitance time related
Equivalent capacitance energy related
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
V
GS
= 0 V, V
DS
= 0 to 520 V f = 1 MHz, I
D
=0 A
V
DD
= 520 V, I
D
= 34.5 A,
V
GS
= 0 to 10 V
(see Figure 16: "Test circuit for gate charge behavior" )
Min. Typ. Max. Unit
-
-
9000
210
-
- pF pF
-
-
-
-
-
-
-
9
768
205
1.5
203
50
84
-
-
-
-
-
-
- pF pf pf
Ω nC nC nC
Notes:
(1)
C o(tr)
is a constant capacitance value that gives the same charging time as C oss
while V
DS
is rising from 0 to
80% V
DSS
.
(2)
C o(er)
is a constant capacitance value that gives the same stored energy as Coss while V
DS
is rising from 0 to
80% V
DSS
.
4/13 DocID030923 Rev 1
STWA78N65M5AG
Symbol t d(V) t r(V) t f(i)
Parameter
Voltage delay time
Voltage rise time
Current fall time t c(off)
Crossing time
Table 7: Switching times
Test conditions
V
DD
= 400 V, I
D
= 40 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 17: "Test circuit for inductive load switching and diode recovery times" and Figure
20: "Switching time waveform" )
Electrical characteristics
Min. Typ. Max. Unit
-
-
-
-
163
14
14
26
-
-
-
- ns ns ns ns
Symbol Parameter
I
SD
Source-drain current
I
SDM
(1)
Source-drain current
(pulsed)
V
SD
(2)
Forward on voltage t rr
Q rr
Reverse recovery time
Reverse recovery charge
I
I
RRM t
Q rr rr
RRM
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Table 8: Source drain diode
Test conditions
I
SD
= 69 A, V
I
SD
= 69 A,
GS
= 0 di/dt = 100 A/µs
V
DD
= 100 V
(see Figure 17: "Test circuit for inductive load switching and diode recovery times" )
I
SD
= 69 A, di/dt = 100 A/µs
V
DD
= 100 V, T j
= 150 °C
(see Figure 17: "Test circuit for inductive load switching and diode recovery times" )
Min. Typ. Max. Unit
- 69 A
- 276 A
-
- 504
1.5 V ns
- 13 µC
-
-
-
-
49
635
19
59
A ns
µC
A
Notes:
(1)
Pulse width limited by safe operating area
(2)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID030923 Rev 1 5/13
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
STWA78N65M5AG
Figure 3: Thermal impedance
Figure 4: Output characteristics Figure 5: Tranfer characteristics
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
W
6/13 DocID030923 Rev 1
STWA78N65M5AG
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Output capacitance stored energy
Figure 10: Normalized gate threshold voltage vs temperature
Figure 11: Normalized on-resistance vs temperature
Figure 12: Source-drain diode forward characteristics
Figure 13: Normalized V
(BR)DSS
vs temperature
DocID030923 Rev 1 7/13
Electrical characteristics
Figure 14: Switching energy vs gate resistance
STWA78N65M5AG
E on
including reverse recovery of a SiC diode.
W
8/13 DocID030923 Rev 1
STWA78N65M5AG
3 Test circuits
Figure 15: Test circuit for resistive load switching times
Test circuits
Figure 16: Test circuit for gate charge behavior
Figure 17: Test circuit for inductive load switching and diode recovery times
Figure 18: Unclamped inductive load test circuit
Figure 19: Unclamped inductive waveform Figure 20: Switching time waveform
DocID030923 Rev 1
AM05540v2_for_M5
9/13
Package information
4
4.1
Package information
STWA78N65M5AG
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
TO-247 long leads package information
Figure 21: TO-247 long leads package outline
10/13 DocID030923 Rev 1
STWA78N65M5AG
Dim.
E
E2
E3 e
L
L1
P
Q
S b2 b3 c
D
A
A1
A2 b
Package information
Table 9: TO-247 long leads package mechanical data mm
Min. Typ. Max.
4.90
2.31
1.90
1.16
0.59
20.90
15.70
4.90
2.40
5.34
19.80
3.50
5.60
6.05
5.00
2.41
2.00
21.00
15.80
5.00
2.50
5.44
19.92
3.60
6.15
15.90
5.10
2.60
5.54
20.10
4.30
3.70
6.00
6.25
5.10
2.51
2.10
1.26
3.25
2.25
0.66
21.10
DocID030923 Rev 1 11/13
Revision history
5
STWA78N65M5AG
Revision history
Date
14-Aug-2017
Table 10: Document revision history
Revision
1
Changes
Initial release.
12/13 DocID030923 Rev 1
STWA78N65M5AG
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