STD11N60DM2
Datasheet
N-channel 600 V, 370 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package
G(1)
TAB
DPAK
1
2 3
D(2, TAB)
S(3)
NG1D2TS3Z
Order code V
DS
@ T
Jmax
R
DS(on) max.
STD11N60DM2 650 V 420 mΩ
• Fast-recovery body diode
• Extremely low gate charge and input capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
I
D
10 A
P
TOT
110 W
Applications
• Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Q rr
) and time (t rr
) combined with low R
DS(on)
, rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Product status
STD11N60DM2
Product summary
Order code
Marking
Package
Packing
STD11N60DM2
11N60DM2
DPAK
Tape and reel
DS11674 - Rev 2 - November 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
STD11N60DM2
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
I
GS
D
Parameter
Gate-source voltage
Drain current (continuous) at T case
= 25 °C
Drain current (continuous) at T case
= 100 °C
I
DM
(1)
P
TOT
dv/dt (2) dv/dt (3)
T stg
T j
Drain current (pulsed)
Total power dissipation at T case
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
1. Pulse width is limited by safe operating area.
2. I
SD
≤ 10 A, di/dt=900 A/μs; V
DS
peak < V
(BR)DSS
,V
DD
= 400 V
3. V
DS
≤ 480 V.
Table 2. Thermal data
Symbol
R thj-case
R thj-pcb
(1)
Parameter
Thermal resistance junction-case
Thermal resistance junction-pcb
1. When mounted on 1 inch² FR-4 board, 2oz Cu.
Table 3. Avalanche characteristics
Symbol
I
AR
(1)
E
AS
(2)
Single pulse avalanche energy
Parameter
Avalanche current, repetitive or not repetitive
1. pulse width limited by T jmax
2. starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V.
Value
±25
10
6.3
40
110
50
50
-55 to 150
Unit
V
A
A
W
V/ns
°C
Value
1.14
50
Unit
°C/W
Value
2.5
250
Unit
A mJ
DS11674 - Rev 2 page 2/16
2
STD11N60DM2
Electrical characteristics
Electrical characteristics
(T case
= 25 °C unless otherwise specified)
Table 4. Static
Symbol
V
(BR)DSS
Parameter
Drain-source breakdown voltage
V
GS
= 0 V, I
Test conditions
D
= 1 mA
I
DSS
I
GSS
V
GS(th)
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
V
GS
= 0 V, V
DS
= 600 V
V
GS
= 0 V, V
DS
= 600 V,
T case
= 125 °C
(1)
V
DS
= 0 V, V
GS
= ±25 V
V
DS
= V
GS
, I
D
= 250 µA
R
DS(on)
Static drain-source onresistance
1. Defined by design, not subject to production test.
V
GS
= 10 V, I
D
= 5 A
Min.
Typ.
Max.
Unit
600 V
1.5
µA
100
3 4
370
±5
5
420
µA
V mΩ
Table 5. Dynamic
Symbol
C iss
C oss
C rss
C oss eq.
(1)
R
G
Q g
Q gs
Q gd
Parameter
Input capacitance
Output capacitance
Test conditions
V
DS
= 100 V, f = 1 MHz, V
GS
= 0 V
Reverse transfer capacitance
Equivalent output capacitance V
DS
= 0 to 480 V, V
GS
= 0 V
Intrinsic gate resistance f = 1 MHz, I
D
= 0 A
Total gate charge
Gate-source charge
V
DD
= 480 V, I
D
= 10 A, V
GS
= 0 to 10 V
(see Figure 14. Test circuit for gate charge behavior )
Gate-drain charge
Min.
-
-
-
-
-
-
-
-
Typ.
614
32
1.08
57
6.2
16.5
3.8
9.2
Max.
-
-
-
-
-
-
-
-
Unit pF pF
Ω nC
1. C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss to 80% V
DSS
.
when V
DS
increases from 0
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
V
GS
= 300 V, I
D
= 5 A, R
G
= 4.7 Ω,
= 10 V (see
Figure 13. Test circuit for resistive load switching times and
Figure 18. Switching time waveform )
Min.
Typ.
Max.
Unit
11.7
-
-
-
-
6.3
31
9.5
-
-
ns
DS11674 - Rev 2 page 3/16
DS11674 - Rev 2
STD11N60DM2
Electrical characteristics
Table 7. Source-drain diode
Symbol
I
SD
(1)
I
SDM
(2)
V
SD
(3)
t rr
Q rr
I
RRM t rr
Q rr
I
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
V
GS
SD
I
SD
T j
= 10 A, di/dt = 100 A/µs, V
= 10 A, di/dt = 100 A/µs, V
DD
)
= 60 V,
= 150 °C (see
Figure 15. Test circuit for inductive load switching and diode recovery times
DD
= 60 V
(see Figure 15. Test circuit for inductive load switching and diode recovery times
)
1. Limited by maximum junction temperature.
2. Pulse width is limited by safe operating area.
3. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Test conditions
= 0 V, I
SD
= 10 A
-
-
-
-
-
-
-
Min.
Typ.
Max.
Unit
10 A
40
1.6
A
90
248
5.5
160
664
8.3
V ns nC
A ns nC
A
Symbol
V
(BR)GSO
Table 8. Gate-source Zener diode
Parameter Test conditions
Gate-source breakdown voltage I
GS
= ±250 µA, I
D
= 0 A
Min.
Typ.
Max.
Unit
±30 V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry.
page 4/16
STD11N60DM2
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
I
D
(A)
Figure 1. Safe operating area
10 1
Operation in this area is limited by max. R
DS(on) t p
= 10µs t p
= 100µs
10 0
10 -1
10 -1 10 0
T j
≤ 150 °C
Tc =25°C single pulse
10 1 10 2 t t p p
= 1ms
= 10ms
10 3 V
DS
(V)
8
4
0
0
I
D
(A)
Figure 3. Output characteristics
V
GIPG270516FQ6F01FOCH
GS
= 8, 9, 10 V
20
16
7 V
12
4 8 12
6 V
16 V
DS
(V)
Figure 5. Gate charge vs gate-source voltage
V
GS
(V)
12
10
V
DS
GIPG270516FQ6F01FQVG
V
DS
(V)
V
DD
= 480V
I
D
= 10 A
600
500
8
6
4
2
0
0 4 8 12
400
300
200
100
16 Qg (nC)
K
Figure 2. Thermal impedance
GC20460
10 0
10 -1
10 -2
10 -5 10 -4 10 -3 10 -2 10 -1 t p
(s)
Figure 4. Transfer characteristics
I
D
(A)
GIPG270516FQ6F01FTCH
20
V
DS
= 20 V
16
12
8
4
0
2 3 4 5 6 7 8 9 V
GS
(V)
Figure 6. Static drain-source on-resistance
R
DS(on)
(mΩ)
GIPG270516FQ6F01FRID
V
GS
= 10 V
390
380
370
360
350
0 2 4 6 8 10 I
D
(A)
DS11674 - Rev 2 page 5/16
STD11N60DM2
Electrical characteristics (curves)
C
(pF)
Figure 7. Capacitance variations
GIPG270516FQ6F01FCVR
10 3
10 2
10 1 f = 1 MHz
10 0
10 -1
10 -1 10 0 10 1
C iss
C oss
C rss
10 2 V
DS
(V)
Figure 9. Normalized on-resistance vs temperature
R
DS(on)
(norm.)
GIPG270516FQ6F01FRON
V
GS
=10 V
2.2
1.8
1.4
1.0
0.6
0.2
-75 -25 25 75 125 T
J
(°C)
Figure 11. Output capacitance stored energy
Eoss
(µJ )
GIPG270516FQ6F01FEOS
4
3
2
1
0
0 100 200 300 400 500 600 V
DS
(V)
Figure 8. Normalized gate threshold voltage vs temperature
V
GS(th)
(norm.)
GIPG270516FQ6F01FVTH
I
D
= 250 μ A
1.1
1.0
0.9
0.8
0.7
-25 25 75 125 T
J
(°C)
Figure 10. Normalized V
(BR)DSS
vs temperature
V
(BR)DSS
(norm.)
GIPG270516FQ6F01FBDV
I
D
= 1 mA
1.08
1.04
1.00
0.96
0.92
-25 25 75 125 T
J
(°C)
Figure 12. Source-drain diode forward characteristics
V
SD
(V)
1.1
GIPG270516FQ6F01FSDF
1.0
T
J
= - 50 °C
T
J
= 25 °C
0.9
0.8
0.7
0.6
0.5
0 2 4 6 8
T
J
= 150 °C
10 I
SD
(A)
DS11674 - Rev 2 page 6/16
STD11N60DM2
Test circuits
3
Test circuits
Figure 13. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF
D.U.T.
V
DD
AM01468v1
Figure 15. Test circuit for inductive load switching and diode recovery times
Figure 14. Test circuit for gate charge behavior
12 V
V
GS pulse width
2200
μF
+
I
G
= CONST
2.7 kΩ
47 kΩ
1 kΩ
47 kΩ
100 nF
100 Ω
V
DD
1 kΩ
D.U.T.
V
G
AM01469v1
Figure 16. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
+
_
R
G
A A fast diode
B
B
G
100 µH
D
D.U.T.
S
3.3
µF +
1000
µF
V
DD
AM01470v1
Figure 17. Unclamped inductive waveform
V (BR)DSS
V D
I DM
I D
V DD V
DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF
V
DD
D.U.T.
AM01471v1
0
Figure 18. Switching time waveform t d(on) t on t r t d(off) t off t f
90% 90%
10%
V
GS
V
DS
90%
10%
0 10%
AM01473v1
DS11674 - Rev 2 page 7/16
4
STD11N60DM2
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
DS11674 - Rev 2 page 8/16
4.1
STD11N60DM2
DPAK (TO-252) type A2 package information
DPAK (TO-252) type A2 package information
Figure 19. DPAK (TO-252) type A2 package outline
DS11674 - Rev 2
0068772_type-A2_rev26 page 9/16
DS11674 - Rev 2
Dim.
c2
D
D1
E
E1 e e1
A
A1
A2 b b4 c
L2
L4
R
V2
H
L
L1
STD11N60DM2
DPAK (TO-252) type A2 package information
Table 9. DPAK (TO-252) type A2 mechanical data mm
Typ.
9.35
1.00
2.60
0.65
0.60
4.95
6.40
5.10
2.159
4.445
0.64
5.20
0.45
0.48
6.00
Min.
2.20
0.90
0.03
5.10
5.20
2.286
4.572
2.80
0.80
0.20
0°
10.10
1.50
3.00
0.95
1.00
5.25
6.60
5.30
2.413
4.699
0.90
5.40
0.60
0.60
6.20
Max.
2.40
1.10
0.23
8° page 10/16
DS11674 - Rev 2
STD11N60DM2
DPAK (TO-252) type A2 package information
Figure 20. DPAK (TO-252) recommended footprint (dimensions are in mm)
FP_0068772_26 page 11/16
4.2
DPAK (TO-252) packing information
Figure 21. DPAK (TO-252) tape outline
T
Top cover tape
10 pitches cumulative tolerance on tape +/- 0.2 mm
P0 D P2
B1
K0
For machine ref. only including draft and radii concentric around B0
B0
A0 P1
User direction of feed
D1
STD11N60DM2
DPAK (TO-252) packing information
F
E
W
User direction of feed
R
Bending radius
AM08852v1
DS11674 - Rev 2 page 12/16
DS11674 - Rev 2
A
D
B
Figure 22. DPAK (TO-252) reel outline
STD11N60DM2
DPAK (TO-252) packing information
T
40mm min. access hole at slot location
C
N
G measured at hub
Full radius
Tape slot in core for tape start
2.5mm min.width
Dim.
E
F
K0
P0
P1
P2
R
T
W
A0
B0
B1
D
D1
AM06038v1
1.5
1.5
1.65
7.4
2.55
3.9
7.9
1.9
40
0.25
15.7
Table 10. DPAK (TO-252) tape and reel mechanical data
Tape Reel mm
Dim.
Min.
6.8
10.4
Max.
7
10.6
12.1
1.6
N
T
D
G
A
B
C
Min.
1.5
12.8
20.2
16.4
50 1.85
7.6
2.75
4.1
8.1
2.1
0.35
16.3
Base qty.
Bulk qty.
mm
Max.
330
13.2
18.4
22.4
2500
2500 page 13/16
STD11N60DM2
Revision history
Date
17-Jun-2016
04-Nov-2019
Revision
1
2
Table 11. Document revision history
Changes
First release.
Modified
Table 1. Absolute maximum ratings and
Table 4. Static .
Updated
Section 4.1 DPAK (TO-252) type A2 package information .
Minor text changes.
DS11674 - Rev 2 page 14/16
STD11N60DM2
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1
DPAK (TO-252) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.2
DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
DS11674 - Rev 2 page 15/16
STD11N60DM2
IMPORTANT NOTICE – PLEASE READ CAREFULLY
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
DS11674 - Rev 2 page 16/16
