STD12NF06
STD12NF06T4
N-channel 60 V, 0.08
Ω
, 12 A, DPAK, IPAK
STripFET™ II Power MOSFET
Features
Type
STD12NF06
STD12NF06T4
V
DSSS
60V
60V
R
DS(on)
<0.1
Ω
<0.1
Ω
I
D
12A
12A
DPAK
1
3
■
■
Exceptional dv/dt capability
Low gate charge
Applications
■ Switching application
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
IPAK
Figure 1.
Internal schematic diagram
1
2
3
Table 1.
Device summary
Order codes
STD12NF06T4T4
STD12NF06T4-1
Marking
D12NF06
D12NF06
Package
DPAK
IPAK
Packaging
Tape and reel
Tube
November 2009 Doc ID 8431 Rev 7 1/14 www.st.com
14
5
6
3
4
1
2
Contents
Contents
STD12NF06, STD12NF06T4
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14 Doc ID 8431 Rev 7
STD12NF06, STD12NF06T4 Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(1)
P
TOT
Drain-source voltage (V
GS
Drain-gate voltage (R
GS
Gate-source voltage
= 0)
= 20K Ω )
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
C
C
= 25°C
=100°C
Total dissipation at T
C
= 25°C
Derating factor dv/dt
(2)
E
AS
(3)
T stg
T
J
Peak diode recovery voltage slope
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
1.
Pulse width limited by safe operating area
2.
I
SD
≤ 12 A, di/dt ≤ 200 A/µs, V
DS
≤ V
(BR)DSS
, T
J
≤ T
JMAX
3.
Starting T
J
= 25 o
C, I
D
= 6 A, V
DD
= 30 V
Table 3.
Symbol
R thJC
R thJA
T l
Thermal data
Parameter
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering purpose
Value
60
60
± 20
12
8.5
48
30
0.2
15
140
-55 to 175
Value
5
100
275
Unit
V
V
V
A
W
A
A
W/°C
V/ns mJ
°C
Unit
°C/W
°C/W
°C
Doc ID 8431 Rev 7 3/14
Electrical characteristics STD12NF06, STD12NF06T4
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
On /off states
Parameter
V
(BR)DSS
Drain-source breakdown voltage
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Zero gate voltage drain current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
Static drain-source on resistance
Test conditions
I
D
= 25mA, V
GS
= 0
V
DS
= Max rating
V
DS
= Max rating, T
C
= 125°C
V
GS
= ±20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 6A
Min.
Typ.
Max.
Unit
60
2 3
1
10
V
µA
µA
±100 nA
4 V
0.08 0.1 W
Table 5.
Dynamic
Symbol g fs
C
C
C
(1) iss oss rss
Parameter Test conditions
Forward transconductance V
DS
= 15V
,
I
D
= 6A
Input capacitance
Output capacitance
Reverse transfer capacitance
V
V
DS
GS
= 25V, f = 1 MHz,
= 0
Q g
Q gs
Q gd
Total gate charge
Gate-source charge
Gate-drain charge
V
V
DD
GS
1.
Pulsed: pulse duration=300 µs, duty cycle 1.5%
= 48V, I
D
= 10V
= 12A
Table 6.
Symbol t d(on) t r t d(off) t f
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Min.
Typ.
Max.
Unit
5 S
-
315
70
30
-
10
3.0
3.5
12 pF pF pF nC nC nC
Test conditions
V
DD
= 30V, I
D
= 6A,
R
G
= 4.7
Ω, V
GS
= 10V
Figure 14 on page 8
Min.
Typ.
Max.
Unit
-
7
18
17
6
ns ns ns ns
4/14 Doc ID 8431 Rev 7
STD12NF06, STD12NF06T4 Electrical characteristics
Table 7.
Symbol
Source drain diode
Parameter Test conditions
I
SD
I
SDM
V
SD
(1)
I t
Q rr rr
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 12A, V
GS
= 0
I
SD
= 12A, di/dt = 100A/µs,
V
DD
= 30V, T
J
= 150°C
Figure 16 on page 8
1.
Pulsed: pulse duration= 300 µs, duty cycle 1.5%
Min Typ.
Max Unit
-
-
12
48
1.3
A
A
V
-
50
65
3.5
ns nC
A
Doc ID 8431 Rev 7 5/14
Electrical characteristics
Figure 2.
Safe operating area
STD12NF06, STD12NF06T4
Figure 3.
Thermal impedance
Figure 4.
Output characteristics Figure 5.
Transfer characteristics
Figure 6.
Transconductance Figure 7.
Static drain-source on resistance
6/14 Doc ID 8431 Rev 7
STD12NF06, STD12NF06T4
Figure 8.
Gate charge vs. gate-source voltage
Electrical characteristics
Figure 9.
Capacitance variations
Figure 10.
Normalized gate threshold voltage vs. temperature
Figure 11.
Normalized on resistance vs. temperature
Figure 12.
Source-drain diode forward characteristics
Figure 13.
Normalized breakdown voltage vs. temperature
Doc ID 8431 Rev 7 7/14
Test circuits
3 Test circuits
STD12NF06, STD12NF06T4
Figure 14.
Switching times test circuit for resistive load
Figure 15.
Gate charge test circuit
Figure 16.
Test circuit for inductive load switching and diode recovery times
Figure 17.
Unclamped inductive load test circuit
Figure 18.
Unclamped inductive waveform
8/14 Doc ID 8431 Rev 7
STD12NF06, STD12NF06T4
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Doc ID 8431 Rev 7 9/14
Package mechanical data
DIM.
D
E e b 4 c c2 e1
H
L
(L1)
L2
V1
A
A1 b b 2
STD12NF06, STD12NF06T4
5.20
0.45
0.4
8
6.00
6.40
4.40
9 .00
0.
8 0 min.
2.20
0.
9 0
0.64
TO-251 (IPAK) mechanical data
mm.
typ
2.2
8
16.10
0.
8 0
10 o
5.40
0.60
0.60
6.20
6.60
max.
2.40
1.10
0.
9 0
0.
9 5
4.60
9 .40
1.20
10/14 Doc ID 8431 Rev 7
006 8 771_H
STD12NF06, STD12NF06T4
DIM.
e1
H
L
L1
D1
E
E1 e
L2
L4
R
V2 b 4 c c2
D
A
A1
A2 b min.
2.20
0.
9 0
0.0
3
0.64
5.20
0.45
0.4
8
6.00
6.40
TO-252 (DPAK) mechanical data
mm.
typ
5.10
4.70
2.2
8
4.40
9 .
3 5
1
0.60
0 o
2.
8 0
0.
8 0
0.20
Package mechanical data max.
2.40
1.10
0.2
3
0.
9 0
5.40
0.60
0.60
6.20
6.60
4.60
10.10
1
8 o
Doc ID 8431 Rev 7
006 8 772_G
11/14
Packaging mechanical data
5 Packaging mechanical data
DPAK FOOTPRINT
STD12NF06, STD12NF06T4
12/14
All dimensions are in millimeters
TAPE MECHANICAL DATA mm inch
DIM.
MIN.
MAX.
MIN.
MAX.
D1
E
F
K0
A0
B0
B1
D
P0
P1
P2
R
W
6.8
7 0.267 0.275
10.4
10.6
0.409 0.417
1.5
1.5
12.1
1.6
0.476
0.059 0.063
0.059
1.65
1.85
0.065 0.073
7.4
7.6
0.291 0.299
2.55
2.75
0.100 0.108
3.9
7.9
4.1
8.1
0.153 0.161
0.311
0.319
1.9
40
2.1
0.075 0.082
1.574
15.7
16.3
0.618
0.641
TAPE AND REEL SHIPMENT
G
N
T
A
B
C
D
REEL MECHANICAL DATA mm inch
DIM.
MIN.
MAX.
MIN.
MAX.
330 12.992
1.5
0.059
12.8
13.2
0.504
0.520
20.2
0.795
16.4
18.4
0.645
0.724
50 1.968
22.4
0.881
BASE QTY
2500
BULK QTY
2500
Doc ID 8431 Rev 7
STD12NF06, STD12NF06T4
Table 8.
Date
Document revision history
Revision
09-Sep-2004
07-Aug-2006
19-Feb-2007
15-Apr-2009
26-Nov-2009
3
4
5
6
7
Changes
Complete document
The document has been reformatted
Typo mistake on page 1
Table 1: Device summary
has been updated
Mechanical data updated
Updated Q rr
in
Table 7: Source drain diode
.
Revision history
Doc ID 8431 Rev 7 13/14
STD12NF06, STD12NF06T4
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14/14 Doc ID 8431 Rev 7
