VNP28N04
"OMNIFET":
FULLY AUTOPROTECTED POWER MOSFET
TYPE
VNP28N04
V clamp
42 V
R
DS(on)
0.035
Ω
I lim
28 A
■
■
■
■
■
■
■
■
■
■
LINEAR CURRENT LIMITATION
THERMAL SHUT DOWN
SHORT CIRCUIT PROTECTION
INTEGRATED CLAMP
LOW CURRENT DRAWN FROM INPUT PIN
DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
ESD PROTECTION
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
COMPATIBLE WITH STANDARD POWER
MOSFET
STANDARD TO-220 PACKAGE
DESCRIPTION
The VNP28N04 is a monolithic device made using STMicroelectronics VIPower Technology, intended for replacement of standard power
MOSFETS in DC to 50 KHz applications.
Built-in thermal shut-down, linear current limi-
BLOCK DIAGRAM
TO-220
1
2
3 tation and overvoltage clamp protect the chip in harsh enviroments.
Fault feedback can be detected by monitoring the voltage at the input pin.
September
20
13
1/11
VNP28N04
ABSOLUTE MAXIMUM RATING
Symbol
V
DS
V in
I
D
I
R
V esd
P to t
T j
T c
T stg
Parameter
Drain-source Voltage (V in
= 0)
Input Voltage
Drain Current
Reverse DC Output Current
Electrostatic Discharge (C= 100 pF, R=1.5 K
Ω
)
Total Dissipation at T c
= 25 o
C
Operating Junction Temperature
Case Operating Temperature
Storage Temperature
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
1.5
62.5
o
C/W o
C/W
ELECTRICAL CHARACTERISTICS (T case
= 25 o
C unless otherwise specified)
OFF
Symbol
V
CLAMP
V
V
I
I
CLTH
INCL
DSS
I SS
Parameter
Drain-source Clamp
Voltage
Drain-source Clamp
Threshold Voltage
Input-Source Reverse
Clamp Voltage
Zero Input Voltage
Drain Current (V in
= 0)
Supply Current from
Input Pin
Test Conditions
I
D
= 200 mA V in
= 0
I
D
= 2 mA V in
= 0
I in
= -1 mA
V
DS
= 13 V V in
= 0
V
DS
= 25 V V in
= 0
V
DS
= 0 V V in
= 10 V
Min.
36
35
-1
Typ.
42
250
ON (
∗
)
Symbol Parameter
V
IN(th)
Input Threshold
Voltage
R
DS(on)
Static Drain-source On
Resistance
Test Conditions
V
DS
= V in
I
D
+ Ii n
= 1 mA
V in
= 10 V I
D
= 14 A
V in
= 5 V I
D
= 14 A
Min.
0.8
Max.
48
-0.3
50
200
500
Unit
V
V
Typ.
Max.
3
0.035
0.05
Unit
V
Ω
Ω
V
µ
A
µ
A
µ
A
DYNAMIC
Symbol g fs
(
∗
)
C oss
Parameter
Forward
Transconductance
Output Capacitance
Test Conditions
V
DS
= 13 V I
D
= 14 A
V
DS
= 13 V f = 1 MHz V in
= 0
Value
Internally Clamped
18
Internally Limited
-28
2000
83
Internally Limited
Internally Limited
-55 to 150
Unit
V
V
A
A
V
W o
C o
C o
C
Min.
14
Typ.
18
Max.
Unit
S
700 900 pF
2/11
VNP28N04
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING (
∗∗
)
Symbol Parameter Test Conditions t d(on) t r t d(off) t f t d(on) t r t d(off) t f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
V
V
DD
DD gen
= 15 V I
= 15 V I
= 10 V R d
= 14 A gen
= 1000
Ω
(see figure 3) d
= 14 A
V gen
= 10 V R gen
= 10
Ω
(see figure 3)
(di/dt) on
Turn-on Current Slope V
DD
= 15 V I
D
= 14 A
V in
= 10 V R gen
= 10
Ω
Q i
Total Input Charge V
DD
= 12 V I
D
= 10 A V in
= 10 V
SOURCE DRAIN DIODE
I
Symbol Parameter
V
SD
(
∗
) Forward On Voltage t rr
(
∗∗
)
Q rr
RRM
(
∗∗
(
)
∗∗
)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
I
SD
= 14 A V in
= 0
I
SD
= 14 A di/dt = 100 A/
µ s
V
DD
= 30 V T j
= 25 o
C
(see test circuit, figure 5)
Min.
Typ.
100
330
400
155
450
1.7
7.5
3.4
35
60
Max.
200
600
700
300
700
3
10
5
Unit ns ns ns ns ns
µ s
µ s
µ s
A/
µ s nC
Min.
Typ.
Max.
1.6
180
0.45
7
Unit
V ns
µ
C
A
PROTECTION
Symbol Parameter Test Conditions
I lim
Drain Current Limit V in
= 10 V V
DS
= 13 V
V in
= 5 V V
DS
= 13 V t dlim
(
∗∗
) Step Response
Current Limit
V in
= 10 V
V in
= 5 V
T jsh
(
∗∗
) Overtemperature
Shutdown
T jrs
(
∗∗
) Overtemperature Reset
I gf
(
∗∗
) Fault Sink Current V in
= 10 V V
DS
= 13 V
V in
= 5 V V
DS
= 13 V
E as
(
∗∗
) Single Pulse
Avalanche Energy starting T j
= 25
DD
= 20 V
V in
= 10 V R ge n
= 1 K
Ω
L = 10 mH
(
∗
) Pulsed: Pulse duration = 300
µ s, duty cycle 1.5 %
(
∗∗
) Parameters guaranteed by design/characterization o
C V
Min.
20
20
150
135
2.5
Typ.
28
28
25
70
Max.
40
40
40
120
50
20 o
C mA mA
J
Unit
A
A
µ s
µ s o
C
3/11
VNP28N04
PROTECTION FEATURES
During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user’s standpoint is that a small DC current (I iss
) flows into the Input pin in order to supply the internal circuitry.
The device integrates:
OVERVOLTAGE CLAMP PROTECTION: internally set at 42V, along with the rugged avalanche characteristics of the Power
MOSFET stage give this device unrivalled ruggedness and energy handling capability.
This feature is mainly important when driving inductive loads.
LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold T jsh
.
OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150 o
C. The device is automatically restarted when the chip temperature falls below 135 o
C.
STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status
Feedback is provided through the Input pin.
The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100
Ω
.
The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential.
Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in R
DS(on)
).
4/11
Thermal Impedance Derating Curve
VNP28N04
Output Characteristics Transconductance
Static Drain-Source On Resistance vs Input
Voltage
Static Drain-Source On Resistance
5/11
VNP28N04
Static Drain-Source On Resistance Input Charge vs Input Voltage
Capacitance Variations Normalized Input Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature Normalized On Resistance vs Temperature
6/11
Turn-on Current Slope Turn-on Current Slope
VNP28N04
Turn-off Drain-Source Voltage Slope Turn-off Drain-Source Voltage Slope
Switching Time Resistive Load Switching Time Resistive Load
7/11
VNP28N04
Switching Time Resistive Load Current Limit vs Junction Temperature
Step Response Current Limit Source Drain Diode Forward Characteristics
8/11
Fig. 1: Unclamped Inductive Load Test Circuits
VNP28N04
Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Input Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 6: Waveforms
9/11
VNP28N04
DIM.
e1
F
H1
J1
L
L1
E e c
D
A b b1
L20
L30
∅
P
Q
Package Weight
TO-220 MECHANICAL DATA
mm.
TYP
4.95
1.23
6.20
2.40
13
3.50
MIN.
4.40
0.61
1.15
0.49
15.25
10
2.40
16.40
28.90
3.75
2.65
1.9Gr. (Typ.)
5.15
1.32
6.60
2.72
14
3.93
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
3.85
2.95
10/11
VNP28N04
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