STGP10NB60SFP
16 A, 600 V, low drop IGBT
Features
■
■
Low on-voltage drop (V
CE(sat)
)
High current capability
Applications
■
■
■
Light dimmer
Static relays
Motor drive
Description
This IGBT utilizes the advanced PowerMESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz).
1
2
3
TO-220FP
Figure 1.
Internal schematic diagram
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Table 1.
Device summary
Order codes
STGP10NB60SFP
Marking
GP10NB60SFP
Package
TO-220-FP
Packaging
Tube
October 2011 Doc ID 022312 Rev 1 1/12 www.st.com
12
Electrical ratings STGP10NB60SFP
Table 2.
Symbol
Absolute maximum ratings
Parameter
V
I
I
CES
C
(1)
C
(1)
Collector-emitter voltage (V
GE
= 0)
Continuous collector current at
T
C
= 25 °C
Continuous collector current at
T
C
= 100 °C
Turn-off latching current I
CL
(2)
I
CP
(3)
V
GE
Pulsed collector current
Gate-emitter voltage
V
ISO
P
TOT
T j
Isolation withstand voltage (RMS) from all three leads to external hea sink
(t=1 s; T
C
= 25 °C)
Total dissipation at T
C
= 25 °C
Operating junction temperature
1.
Calculated according to the iterative formula
Value
600
23
12
20
80
±20
2500
25
– 55 to 150
I
C
(
T
C
)
=
R thj – c
×
V
T
) ( max
–
)
(
T
T j max
)
,
I
C
(
T
C
) )
2.
Vclamp = 80% of V
CES
, T j
=150 °C, R
G
=1k
Ω
, V
GE
=15 V
3.
Pulse width limited by maximum junction temperature and turn-off within RBSOA
Table 3.
Symbol
R thj-case
R thj-amb
Thermal data
Parameter Value
Thermal resistance junction-case 5
Thermal resistance junction-ambient 62.5
Unit
°C/W
°C/W
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V
W
°C
Unit
V
A
A
A
A
V
2/12 Doc ID 022312 Rev 1
STGP10NB60SFP Electrical characteristics
(T j
=25 °C unless otherwise specified)
Table 4.
Symbol
Static
Parameter Test conditions
V
(BR)CES
Collector-emitter breakdown voltage (V
GE
= 0)
I
C
= 250 µA
V
(BR)ECS
I
I
GES
CES
Emitter-collector breakdown voltage (V
GE
= 0)
I
C
= 1 mA
Gate-emitter leakage current (V
CE
= 0)
V
GE
= ±20 V
Collector cut-off current
(V
GE
= 0)
V
V
CE
CE
= 600 V
= 600 V, T j
= 125 °C
V
GE(th)
Gate threshold voltage
V
CE(sat)
Collector-emitter saturation voltage
V
CE
= V
GE
, I
C
= 250 µA
V
GE
= 15 V, I
C
= 5 A
V
GE
= 15 V, I
C
= 10 A
V
GE
= 15 V, I
C
= 10 A,
T j
= 125 °C g fs
(1)
Forward transconductance V
CE
= 15 V
,
I
C
= 10 A
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min.
Typ.
Max. Unit
600 V
20 V
±100 nA
2.5
5
10
100
5
1.15
1.35
1.75
µA
µA
V
V
1.25
S
Table 5.
Symbol
Dynamic
Parameter Test conditions Min.
Typ.
Max.
Unit
C ies
C oes
C res
Input capacitance
Output capacitance
Reverse transfer capacitance
V
CE
= 25 V, f = 1 MHz, V
GE
= 0 -
610
65
12
-
Q g
Total gate charge
V
CE
= 400 V, I
C
= 10 A,
V
GE
= 15 V
(see Figure 17)
33 -
Obsolete Product(s) - Obsolete Product(s) nC pF pF pF
Doc ID 022312 Rev 1 3/12
Electrical characteristics STGP10NB60SFP
Table 6.
Symbol t d(on) t r
(di/dt) on t r
(V off
) t d
( off
) t f
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time t r
(V off
) t d
( off
) t f
Switching on/off (inductive load)
Parameter Test conditions
Off voltage rise time
Turn-off delay time
Current fall time
V
CC
= 480 V, I
C
= 10 A
R
G
= 1 k
Ω
, V
GE
= 15 V
(see Figure 16)
V
CC
= 480 V, I
C
= 10 A
R
G
= 1 k
Ω
, V
GE
= 15 V
(see Figure 16)
V
CC
= 480 V, I
C
= 10 A
R
G
= 1 k
Ω
, V
GE
= 15 V,
T j
= 125 °C
(see Figure 16)
Min.
Typ.
Max. Unit
-
-
0.7
0.46
8
2.2
1.2
1.2
-
-
µs
µs
A/µs
µs
-
3.8
1.2
1.9
µs
Table 7.
Symbol
Eon
(1)
E off
(2)
E ts
E off
(2)
Switching energy (inductive load)
Parameter
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-off switching losses
Test conditions
V
CC
= 480 V, I
C
= 10 A
R
G
= 1 k
Ω
, V
GE
= 15 V
(see Figure 16)
V
CC
= 480 V, I
C
= 10 A
R
G
= 1 k
Ω
, V
GE
= 15 V,
T j
= 125 °C
(see Figure 16)
Min.
Typ.
Max.
Unit
-
-
0.6
5
5.6
8 -
-
µJ
µJ
µJ
µJ
1.
Eon is the turn-on losses when a typical diode is used in the test circuit. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the same temperature (25°C and 125°C).
2.
Turn-off losses include also the tail of the collector current.
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STGP10NB60SFP
Figure 2.
Output characteristics
Electrical characteristics
Figure 3.
Transfer characteristics
Figure 4.
Transconductance Figure 5.
Collector-emitter on voltage vs temperature
Figure 6.
Collector-emitter on voltage vs collector current
Figure 7.
Normalized gate threshold vs temperature
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Electrical characteristics STGP10NB60SFP
Figure 8.
Normalized breakdown voltage vs temperature
Figure 9.
Gate charge vs gate-emitter voltage
Figure 10.
Capacitance variations Figure 11.
Switching losses vs temperature
Figure 12.
Switching losses vs gate resistance Figure 13.
Switching losses vs collector current
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STGP10NB60SFP
Figure 14. Thermal impedance
Electrical characteristics
Figure 15. Turn-off SOA
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Test circuits
3 Test circuits
Figure 16.
Test circuit for inductive load switching
STGP10NB60SFP
Figure 17.
Gate charge test circuit
Figure 18.
Switching waveforms
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8/12 Doc ID 022312 Rev 1
STGP10NB60SFP
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
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Doc ID 022312 Rev 1 9/12
Package mechanical data
Table 8.
TO-220FP mechanical data
Dim.
L5
L6
L7
Dia
G1
H
L2
L3
L4
F
F1
F2
G
D
E
A
B
28.6
9.8
2.9
15.9
9
3
Figure 19.
TO-220FP drawing
Min.
0.75
1.15
1.15
4.95
4.4
2.5
2.5
0.45
2.4
10
L7
A
B
Di a
L6 mm
Typ.
16
L5
D
F2
H
STGP10NB60SFP
E
F
G1
G
Max.
1
1.70
1.70
5.2
4.6
2.7
2.75
0.7
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
L4
10/12
L2
L 3
Doc ID 022312 Rev 1
7012510_Rev_K
STGP10NB60SFP
Table 9.
Date
Document revision history
Revision
03-Oct-2011 1 New release.
Changes
Revision history
Obsolete Product(s) - Obsolete Product(s)
Doc ID 022312 Rev 1 11/12
STGP10NB60SFP
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