STF21P6LLF6
P-channel -
60 V, 25.5 mΩ typ., -21 A STripFET™
F6 Power MOSFET in a TO-220FP package
Datasheet - production data
TO-220FP
Figure 1: Internal schematic diagram
Features
Order code V
DS
R
DS(on)
max.
STF21P6LLF6 -60 V 28.5 mΩ
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
I
D
P
TOT
-21 A 25 W
Applications
Switching applications
Description
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting
Power MOSFET exhibits very low R
DS(on)
in all packages.
Order code
STF21P6LLF6
Table 1: Device summary
Marking Package
21P6LLF6 TO-220FP
Packing
Tape and reel
November 2016 DocID029893 Rev 1
This is information on a product in full production.
1/13 www.st.com
Contents
Contents
STF21P6LLF6
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1
TO-220FP package information ...................................................... 10
5 Revision history ............................................................................ 12
2/13 DocID029893 Rev 1
STF21P6LLF6
1
Electrical ratings
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
V
DS
Drain-source voltage
V
GS
I
D
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
I
D
Drain current (continuous) at T
C
= 100 °C
I
DM
(1)
Drain current (pulsed)
P
TOT
Total dissipation at T
C
= 25 °C
V
ISO
Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C)
T stg
Storage temperature range
T j
Operating junction temperature range
Notes:
(1)
Pulse width limited by safe operating area.
Symbol
Table 3: Thermal data
Parameter
R thj-case
R thj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
-60
±20
-21
-15
-84
25
2.5
-55 to 175 °C
Value
6
62.5
Unit
°C/W
°C/W
Unit
V
V
A
A
A
W kV
DocID029893 Rev 1 3/13
Electrical characteristics
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Symbol Parameter
Table 4: Static
Test conditions
V
(BR)DSS
I
DSS
Drain-source breakdown voltage
I
GSS
V
GS(th)
Gate threshold voltage
V
GS
= 0 V, I
D
= -250 µA
Zero gate voltage Drain current
V
GS
= 0 V, V
DS
= -60 V
V
GS
= 0 V, V
DS
= -60 V,
T
C
= 125 °C (1)
Gate-body leakage current V
DS
= 0 V, V
GS
= ± 20 V
R
DS(on)
Static drain-source onresistance
V
DS
= V
GS
, I
D
= -250 µA
V
GS
= -10 V, I
D
= -10.5 A
V
GS
= -4.5 V, I
D
= -10.5 A
Notes:
(1)
Defined by design, not subject to production test.
Symbol Parameter
Table 5: Dynamic
Test conditions
C iss
C oss
C rss
Q g
Q gs
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
V
DS
= -25 V, f = 1 MHz,
V
GS
= 0 V
Q gd
R
G
Gate-drain charge
Gate input resistance
V
DD
= -30 V,
I
D
= -21 A,
V
GS
= -4.5 V
(see Figure 14: "Gate charge test circuit" )
I
D
= 0 A, gate DC bias = 0 V, f = 1 MHz, magnitude of alternative signal = 20 mV
Symbol Parameter t d(on)
Turn-on delay time t r
Rise time t d(off)
Turn-off-delay time t f
Fall time
Table 6: Switching times
Test conditions
V
DD
= -30 V,
I
D
= -10 A
R
G
= 4.7 Ω,
V
GS
= -10 V
(see Figure 13: "Switching times test circuit for resistive load" )
STF21P6LLF6
Min. Typ. Max. Unit
-60
-1
V
-1 µA
-10 µA
±100 nA
-2.5
25.5 28.5
V mΩ
30.5 36.5
Min. Typ. Max. Unit
-
-
3780
262
-
- pF pF
- 170 - pF
-
-
30
10.8
-
- nC nC
-
-
Min. Typ. Max. Unit
-
-
-
51.4
39
171
-
-
- ns ns ns
-
10.5
1.7
21
-
-
- nC
Ω ns
4/13 DocID029893 Rev 1
STF21P6LLF6
Symbol
V
SD
(1)
I t
Q rr rr
RRM
Parameter
Forward on voltage
Reverse recovery time
Table 7: Source drain diode
Test conditions
Reverse recovery charge
Reverse recovery current
V
GS
= 0 V,
I
SD
= -21 A
I
SD
= -35 A, di/dt = 100 A/µs,
V
DD
= -48 V,
(see Figure 15: "Test circuit for inductive load switching and diode recovery times" )
Electrical characteristics
Min. Typ. Max. Unit
-
-
-
-
34
48
-2.8
-1.1 V ns nC
A
Notes:
(1)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%
DocID029893 Rev 1 5/13
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
STF21P6LLF6
Figure 3: Thermal impedance
Figure 4: Output characteristics Figure 5: Transfer characteristics
Figure 6: Normalized gate threshold voltage vs temperature
Figure 7: Normalized V
(BR)DSS
vs temperature
6/13 DocID029893 Rev 1
STF21P6LLF6
Figure 8: Static drain-source on-resistance
Electrical characteristics
Figure 9: Normalized on-resistance vs. temperature
Figure 10: Gate charge vs gate-source voltage Figure 11: Capacitance variations voltage
Figure 12: Source-drain diode forward characteristics
For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed.
DocID029893 Rev 1 7/13
Test circuits
3 Test circuits
Figure 13: Switching times test circuit for resistive load
STF21P6LLF6
Figure 14: Gate charge test circuit
Figure 15: Test circuit for inductive load switching and diode recovery times
8/13 DocID029893 Rev 1
STF21P6LLF6
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
DocID029893 Rev 1 9/13
Package information
4.1 TO-220FP package information
Figure 16: TO-220FP package outline
STF21P6LLF6
10/13 DocID029893 Rev 1
STF21P6LLF6
Dim.
G1
H
L2
L3
L4
L5
L6
L7
Dia
F
F1
F2
G
A
B
D
E
Table 8: TO-220FP package mechanical data mm
Min. Typ.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
16
28.6
9.8
2.9
15.9
9
3
Package information
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
DocID029893 Rev 1 11/13
Revision history
5
STF21P6LLF6
Revision history
Date
11-Nov-2016
Table 9: Document revision history
Revision
1
Changes
First release.
12/13 DocID029893 Rev 1
STF21P6LLF6
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