STF13N60M2(045Y)
N-channel 600 V, 0.35 Ω typ., 11 A MDmesh M2
Power MOSFET in a TO-220FP narrow leads package
Datasheet − production data
Features
VDS @
TJmax
RDS(on)
max
ID
STF13N60M2(045Y)
650 V
0.38 Ω
11 A
• Extremely low gate charge
3
1
Order codes
• Excellent output capacitance (Coss) profile
2
TO-220FP
narrow leads
• 100% avalanche tested
• Zener-protected
Applications
Figure 1. Internal schematic diagram
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics, rendering
it suitable for the most demanding high efficiency
converters.
AM15572v1
Table 1. Device summary
Order codes
Marking
Package
Packaging
STF13N60M2(045Y)
13N60M2
TO-220FP narrow leads
Tube
January 2015
This is information on a product in full production.
DocID027342 Rev 1
1/12
www.st.com
12
Contents
STF13N60M2(045Y)
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
.............................................. 8
DocID027342 Rev 1
STF13N60M2(045Y)
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
VGS
ID
Parameter
± 25
V
(1)
A
11
Drain current (continuous) at TC = 100 °C
IDM (2)
Drain current (pulsed)
PTOT
dv/dt
Unit
Gate-source voltage
Drain current (continuous) at TC = 25 °C
ID
Value
(3)
dv/dt(4)
A
44 (1)
A
Total dissipation at TC = 25 °C
25
W
Peak diode recovery voltage slope
15
V/ns
MOSFET dv/dt ruggedness
50
V/ns
2500
V
- 55 to 150
°C
Value
Unit
5
°C/W
62.5
°C/W
Value
Unit
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg
Storage temperature
Tj
7
(1)
Max. operating junction temperature
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 11 A, di/dt ≤ 400 A/µs; VDS peak < V (BR)DSS, VDD=400 V.
4. VDS ≤ 480 V
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-ambient max
Table 4. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetetive or not
repetetive (pulse width limited by Tjmax)
2.8
A
EAS
Single pulse avalanche energy (starting
Tj=25°C, ID= IAR; VDD=50)
125
mJ
DocID027342 Rev 1
3/12
Electrical characteristics
2
STF13N60M2(045Y)
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
V(BR)DSS
Parameter
Drain-source
breakdown voltage
Test conditions
ID = 1 mA, VGS = 0
Min.
Typ.
Max.
Unit
600
V
IDSS
Zero gate voltage
VDS = 600 V
drain current (VGS = 0) VDS = 600 V, TC=125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
±10
µA
3
4
V
0.35
0.38
Ω
Min.
Typ.
Max.
Unit
-
580
-
pF
-
32
-
pF
-
1.1
-
pF
VGS = ± 25 V
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source
on-resistance
2
VGS = 10 V, ID = 5.5 A
Table 6. Dynamic
Symbol
Parameter
Test conditions
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Coss eq.(1)
Equivalent output
capacitance
VDS = 0 to 480 V, VGS = 0
-
120
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
6.6
-
Ω
Qg
Total gate charge
-
17
-
nC
-
2.5
-
nC
-
9
-
nC
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDS = 100 V, f = 1 MHz,
VGS = 0
VDD = 480 V, ID = 11 A,
VGS = 10 V (see Figure 15)
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Table 7. Switching times
Symbol
td(on)
tr
td(off)
tf
4/12
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off delay time
VDD = 300 V, ID = 5.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14 and 19)
Fall time
DocID027342 Rev 1
Min.
Typ.
Max.
Unit
-
11
-
ns
-
10
-
ns
-
41
-
ns
-
9.5
-
ns
STF13N60M2(045Y)
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Source-drain current
-
11
A
ISDM
(1)
Source-drain current (pulsed)
-
44
A
VSD
(2)
Forward on voltage
-
1.6
V
ISD
trr
ISD = 11 A, VGS = 0
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 11 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 16)
ISD = 11 A, di/dt = 100 A/µs
VDD = 60 V, Tj=150 °C
(see Figure 16)
-
297
ns
-
2.8
µC
-
18.5
A
-
394
ns
-
3.8
µC
-
19
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID027342 Rev 1
5/12
Electrical characteristics
2.1
STF13N60M2(045Y)
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
AM15735v1
ID
(A)
10
in
th
is
n m
tio y
ra d b
e
e
p
O imit
L
1
ar
ax
ea
R
D
is
S(
on
)
10µs
100 µS
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1
10
1
VDS(V)
100
Figure 4. Output characteristics
Figure 5. Transfer characteristics
AM15712v1
ID
(A)
AM15713v1
ID (A)
VGS=7, 8, 9, 10V
20
20
VDS=18V
6V
16
16
12
12
5V
8
8
4
4
4V
0
0
4
12
8
16
Figure 6. Normalized V(BR)DSS vs temperature
AM15714v1
V(BR)DSS
(norm)
0
0
VDS(V)
ID=1 mA
2
4
8
6
VGS(V)
Figure 7. Static drain-source on-resistance
AM15715v1
RDS(on)
(Ω)
VGS=10V
1.1
0.370
1.06
0.360
1.02
0.350
0.98
0.340
0.94
0.9
-50
6/12
0.330
0
50
100
TJ(°C)
DocID027342 Rev 1
0
2
4
6
8
10
ID(A)
STF13N60M2(045Y)
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
AM15716v1
VDS
VGS
(V)
10
(V)
VDD=480V
ID=11A
VDS
500
Figure 9. Capacitance variations
AM15717v1
C
(pF)
1000
Ciss
400
8
100
300
6
Coss
10
4
200
2
100
0
0
8
4
12
0
Qg(nC)
16
Figure 10. Normalized gate threshold voltage vs
temperature
AM15718v1
VGS(th)
(norm)
1
Crss
0.1
0.1
1
10
100
VDS(V)
Figure 11. Normalized on-resistance vs
temperature
AM15719v1
RDS(on)
(norm)
1.1
ID=250µA
ID=5.5 A
VGS=10V
2.1
1.0
1.7
0.9
1.3
0.8
0.9
0.7
0.6
-50
100
50
0
0.5
-50
TJ(°C)
Figure 12. Source-drain diode forward
characteristics
AM15720v1
VSD (V)
100
50
0
TJ(°C)
Figure 13. Output capacitance stored energy
AM15721v1
Eoss(µJ)
TJ=-50°C
1
4
TJ=25°C
0.9
3
0.8
2
0.7
TJ=150°C
1
0.6
0.5
0
2
4
6
8
10
ISD(A)
DocID027342 Rev 1
0
0
100
200
300
400
500
VDS(V)
7/12
Test circuits
3
STF13N60M2(045Y)
Test circuits
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 16. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 17. Unclamped inductive load test circuit
L
A
D
G
D.U.T.
FAST
DIODE
B
B
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/12
0
DocID027342 Rev 1
10%
AM01473v1
STF13N60M2(045Y)
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 20. TO-220FP narrow leads drawing
8197858_Rev_B
DocID027342 Rev 1
9/12
Package mechanical data
STF13N60M2(045Y)
Table 9. TO-220FP narrow leads mechanical data
mm
Dim.
Min.
10/12
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
0.95
1.20
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
15.20
15.60
L3
28.6
30.6
L4
10.3
11.1
L5
2.60
2.70
2.90
L6
15.8
16.0
16.2
L7
9
9.3
Dia
3
3.2
DocID027342 Rev 1
STF13N60M2(045Y)
5
Revision history
Revision history
Table 10. Document revision history
Date
Revision
12-Jan-2015
1
Changes
First release.
DocID027342 Rev 1
11/12
STF13N60M2(045Y)
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on
ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or
the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2015 STMicroelectronics – All rights reserved
12/12
DocID027342 Rev 1
">
