STB12NK80Z, STF12NK80Z,
STP12NK80Z, STW12NK80Z
N-channel 800 V, 0.65
Ω
typ., 10.5 A Zener-protected SuperMESH™
Power MOSFET in D
2
PAK, TO-220FP, TO-220 and TO-247
Datasheet — production data
Features
Type
STB12NK80Z
STF12NK80Z
STP12NK80Z
STW12NK80Z
V
DSS
(@Tjmax)
R
DS(on)
800V
800V
800V
800V
I
D
P
W
<0.75
Ω 10.5 A 190W
<0.75
Ω 10.5 A 40W
<0.75
Ω 10.5 A 190W
<0.75
Ω 10.5 A 190W
■
■
■
■
■
■
Extremely high dv/dt capability
Improved esd capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing reliability
Applications
■ Switching applications
TAB
TAB
1
D
2
PAK
3
TO-220
1
2
3
TO-220FP
1
2
3
TO-247
Figure 1.
Internal schematic diagram
D(2,TAB)
Description
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Table 1.
Device summary
Order codes
STB12NK80Z
STF12NK80Z
STP12NK80Z
STW12NK80Z
Marking
12NK80Z
12NK80Z
12NK80Z
12NK80Z
G(1)
Package
D
2
PAK
TO-220FP
TO-220
TO-247
S(3)
AM01476v1
Packaging
Tape and reel
Tube
Tube
Tube
August 2012
This is information on a product in full production.
Doc ID 9567 Rev 7 1/22 www.st.com
22
5
6
3
4
1
2
Contents
Contents
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/22 Doc ID 9567 Rev 7
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z Electrical ratings
Table 2.
Absolute maximum ratings
Symbol Parameter
V
DS
V
DGR
V
GS
I
D
Drain-source voltage (V
GS
Drain-gate voltage (R
GS
Gate-source voltage
= 0)
= 20K Ω )
Drain current (continuous) at T
C
= 25°C
I
D
I
DM
(2)
Drain current (continuous) at T
Drain current (pulsed)
C
=100°C
P
TOT
Total dissipation at T
C
= 25°C
Derating factor
Vesd(G-S) G-S ESD (HBM C= 100pF, R= 1.5k
Ω )
V
ISO dv/dt
( 3 )
Insulation withstand voltage (DC)
Peak diode recovery voltage slope
T
J
T stg
Operating junction temperature
Storage temperature
1.
Limited by maximum junction temperature.
2.
Pulse width limited by safe operating area.
3 .
I
SD
≤
10.5 A, di/dt
≤
200A/µs, V
DD
≤
(BR)DSS
, T j
≤
T
JMAX
Value
D
2
PAK
TO-220
TO-247
TO-220FP
800
800
± 3 0
10.5
6.6
42
190
1.52
--
10.5
(1)
6.6
(1)
42
(1)
40
0.
3 2
4
4.5
-55 to 150
2500
Unit
V
V
V
A
A
A
W
W/°C kV
V
V
°C
Table 3.
Thermal data
Symbol Parameter
R thj-case
R thj-a
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Value
Unit
TO-220/
D²PAK
TO-220FP TO-247
0.66
62.5
3 .1
0.66
50
°C/W
°C/W
Doc ID 9567 Rev 7 3 /22
Electrical ratings STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
Table 4.
Avalanche characteristics
Symbol Parameter
I
AS
E
AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
Value
10.5
400
Unit
A mJ
4/22 Doc ID 9567 Rev 7
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z Electrical characteristics
(T
CASE
=25°C unless otherwise specified).
Table 5.
On/off states
Symbol Parameter Test conditions
V
(BR)DSS
Drain-source breakdown voltage
V
R
I
I
DSS
GSS
GS(th)
DS(on)
I
D
= 1mA, V
GS
= 0
Peak diode recovery voltage slope
V
DS
= 800 V,
V
DS
=800 V, Tc=125°C
Gate body leakage current
(V
GS
= 0)
V
GS
= ± 20V
Gate threshold voltage V
DS
= V
GS
, I
D
= 100µA
Static drain-source on- resistance
V
GS
= 10V, I
D
= 5.25A
Min.
Typ.
Max.
Unit
800
3 3 .75
1
50
± 10
4.5
0.65
0.75
V
µA
µA
µA
V
Ω
Table 6.
Dynamic
Symbol Parameter Test conditions Min.
Typ.
Max.
Unit g fs
(1)
C
C
C iss oss rss
C osseq
(2)
Forward transconductance V
DS
=15V, I
D
= 5.25A
Input capacitance
Output capacitance
Reverse transfer capacitance
V
DS
=25V, f=1 MHz, V
GS
=0
Equivalent output capacitance
V
GS
=0, V
DS
=0V to 640V -
-
12
2620
250
5 3
100 -
-
S pF pF pF pF
Q g
Q gs
Q gd t d(on) t r t d(off) t f t r(Voff) t f t c
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Off voltage rise time
Fall time
Cross-over time
V
V
DD
GS
(see
V
DD
R
G
=640V, I
=10V
D
Figure 21
=400 V, I
D
= 10.5A
= 5.25A,
=4.7
Ω, V
GS
(see
V
DD
R
G
Figure 22
=640 V, I
D
= 10.5A,
=4.7
Ω,
V
GS
(see
Figure 22
)
)
)
=10V
=10V -
-
-
87
14
44
3 0
18
70
20
16
15
28
-
-
-
1.
Pulsed: pulse duration= 3 00µs, duty cycle 1.5%
2.
C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss increases from 0 to 80% V
DSS
when V
DS nC nC nC ns ns ns ns ns ns ns
Doc ID 9567 Rev 7 5/22
Electrical characteristics STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
Table 7.
Source drain diode
Symbol Parameter Test conditions
I
SD
I
SDM
(1)
V
SD
(2) t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Pulse width limited by safe operating area.
2.
Pulsed: pulse duration= 3 00µs, duty cycle 1.5%
I
SD
=10.5A, V
GS
=0
I
SD
=10.5A, di/dt = 100A/µs,
V
DD
=100V, Tj=150°C
Min.
Typ.
Max.
Unit
-
-
-
10.5
42
1.6
-
6 3 5
5.9
18.5
A
A
V ns
µC
A
Table 8.
Gate-source zener diode
Symbol Parameter
BV
GSO
Gate-Source breakdown voltage
Test conditions
Igs=±1mA
(Open drain)
Min Typ.
Max.
Unit
3 0 V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.
6/22 Doc ID 9567 Rev 7
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z Electrical characteristics
Figure 2.
Safe operating area for TO-220 and
D²PAK
Figure 3.
Thermal impedance for TO-220 and
D²PAK
Figure 4.
Safe operating area for TO-220FP
AM1474 8 v1
I
D
(A)
Figure 5.
Thermal impedance for TO-220FP
10
1
Oper a tion in thi s a re a i s
Limited b y m a x R
D S (on)
10
0
10 µs
100 µs
1m s
10m s
10
-1
10
-2
10
-1
10
0
Tj=150°C
Tc=25°C
S inlge p u l s e
10
1
10
2
V
D S
(V)
Figure 6.
Safe operating area for TO-247 Figure 7.
Thermal impedance for TO-247
Doc ID 9567 Rev 7 7/22
Electrical characteristics
Figure 8.
Output characteristics
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
Figure 9.
Transfer characteristics
Figure 10. Transconductance Figure 11. Static drain-source on-resistance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
8/22 Doc ID 9567 Rev 7
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z Electrical characteristics
Figure 14. Normalized gate threshold voltage vs temperature
Figure 15. Normalized on-resistance vs temperature
Figure 16. Source-drain diode forward characteristics
Figure 17. Normalized B
VDSS
vs temperature
Figure 18. Maximum avalanche energy vs temperature
Doc ID 9567 Rev 7 9/22
Test circuits STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
Figure 19. Switching times test circuit for resistive load
Figure 20. Gate charge test circuit
Figure 21. Test circuit for inductive load switching and diode recovery times
Figure 22. Unclamped Inductive load test circuit
Figure 23. Unclamped inductive waveform
10/22 Doc ID 9567 Rev 7
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
4 Package mechanical data
Package mechanical data
L
L1
L2
R
V2
E
E1 e e1
H
J1 b2 c c2
D
D1
A
A1 b
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
Table 9.
D²PAK (TO-263) mechanical data
Dim.
mm
Typ.
Min.
4.40
0.0
3
0.70
1.14
0.45
1.2
3
8.95
7.50
10
8.50
Max.
4.60
0.2
3
0.9
3
1.70
0.60
1.
3 6
9.
3 5
10.40
4.88
15
2.49
2.29
1.27
1.
3 0
0°
2.54
0.4
5.28
15.85
2.69
2.79
1.40
1.75
8°
Doc ID 9567 Rev 7 11/22
Package mechanical data STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
Figure 24.
D²PAK (TO-263) drawing
0079457_T
Figure 25.
D²PAK footprint
(a)
16.90
12.20
12/22 a.
All dimension are in millimeters
9.75
Doc ID 9567 Rev 7
3.50
1.60
5.0
8
Footprint
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
F
F1
F2
G
G1
H
A
B
D
E
L5
L6
L7
Dia
L2
L 3
L4
Table 10.
TO-220FP mechanical data
Dim.
Min.
0.75
1.15
1.15
4.95
2.4
10
4.4
2.5
2.5
0.45
28.6
9.8
2.9
15.9
9
3 mm
Typ.
16
Package mechanical data
Max.
1
1.70
1.70
5.2
2.7
10.4
4.6
2.7
2.75
0.7
3 0.6
10.6
3 .6
16.4
9.
3
3 .2
Doc ID 9567 Rev 7 1 3 /22
Package mechanical data STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
Figure 26.
TO-220FP drawing
14/22 Doc ID 9567 Rev 7
7012510_Rev_K_B
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
Table 11.
TO-220 type A mechanical data
Dim.
D
D1
E e e1
F
A b b1 c
H1
J1
L
L1
L20
L 3 0
∅ P
Q
10
2.40
4.95
1.2
3
6.20
2.40
1 3
3 .50
Min.
4.40
0.61
1.14
0.48
15.25
3 .75
2.65
mm
Typ.
1.27
16.40
28.90
Package mechanical data
3 .85
2.95
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.
3 2
6.60
2.72
14
3 .9
3
Doc ID 9567 Rev 7 15/22
Package mechanical data STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
Figure 27.
TO-220 type A drawing
00159 88 _typeA_Rev_ S
16/22 Doc ID 9567 Rev 7
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
A
A1 b b1 b2 c
D
L1
L2
∅ P
∅
R
S
E e
L
Table 12.
TO-247 mechanical data
Dim.
Min.
4.85
2.20
1.0
2.0
3 .0
0.40
19.85
15.45
5.
3 0
14.20
3 .70
3 .55
4.50
5.
3 0 mm.
Typ.
5.45
18.50
5.50
Package mechanical data
Max.
5.15
2.60
1.40
2.40
3 .40
0.80
20.15
15.75
5.60
14.80
4.
3 0
3 .65
5.50
5.70
Doc ID 9567 Rev 7 17/22
Package mechanical data
Figure 28.
TO-247 drawing
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
0075325_G
18/22 Doc ID 9567 Rev 7
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z Packaging mechanical data
A0
B0
D
D1
E
F
K0
P0
P1
P2
R
T
W
Table 13.
D²PAK (TO-263) tape and reel mechanical data
Tape mm
Dim.
Dim.
Min.
10.5
15.7
1.5
1.59
1.65
11.4
4.8
3 .9
11.9
1.9
50
0.25
2 3 .7
Max.
11.6
5.0
4.1
12.1
2.1
10.7
15.9
1.6
1.61
1.85
0.
3 5
24.
3
C
D
G
A
B
N
T
Min.
1.5
12.8
20.2
24.4
100
Base qty
Bulk qty
Reel mm
Max.
33 0
1 3 .2
26.4
3 0.4
1000
1000
Doc ID 9567 Rev 7 19/22
Packaging mechanical data
Figure 29.
Tape
T
Top cover t a pe
K0
B0
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm
P0 D P2
F
E
W
A0 P1
U s er direction of feed
D1
R
20/22
Reel
REEL DIMEN S ION S
U s er direction of feed
D
B
40mm min.
Acce ss hole
At s l ot loc a tion
C
A
Bending r a di us
AM0 88 52v2
T
N
F u ll r a di us
Doc ID 9567 Rev 7
T a pe s lot in core for t a pe s t a rt 25 mm min.
width
G me asu red a t h ub
AM0 88 51v2
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z Revision history
Table 14.
Document revision history
Date Revision
22-Jun-2004
28-Jan-2005
08-Sep-2005
3 1-Jul-2006
27-Apr-2007
28-Aug-2012
5
6
2
3
4
7
Changes
Preliminary version.
Complete version.
Figure 2 and Figure 6
changed.
The document has been reformatted.
Modified R
DS(on)
value on Table 5
.
Inserted new device in TO-220FP.
Updated Table 1: Device summary
, Table 2: Absolute maximum ratings and Table 3: Thermal data
.
Updated Section 4: Package mechanical data
and
Section 5:
Packaging mechanical data
.
Minor text changes in the cover page.
Doc ID 9567 Rev 7 21/22
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
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22/22 Doc ID 9567 Rev 7
