STMicroelectronics VND5025AK-E Datasheet
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VND5025AK-E
Double channel high side driver with analog current sense for automotive applications
Features
Max transient supply voltage
Operating voltage range
V
CC
V
CC
Max on-state resistance (per ch.) R
ON
Current limitation (typ) I
LIMH
Off-state supply current I
S
41V
4.5 to 36V
25 m Ω
41 A
2 µA
(1)
1.
Typical value with all loads connected.
PowerSSO-24™
– Electrostatic discharge protection
Application
■
■
All types of resistive, inductive and capacitive loads
Suitable as LED driver
■
■
■
Main
– In-rush current active management by power limitation
– Very low standby current
– 3.0V CMOS compatible input
– Optimized electromagnetic emission
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
European directive
– Package: ECOPACK ®
Diagnostic functionsDoc ID 12581
– Proportional load current sense
– High current sense precision for wide range currents
– Current sense disable
– Thermal shutdown indication
– Very low current sense leakage
Protection
– Undervoltage shut-down
– Overvoltage clamp
– Load current limitation
– Self-limiting of fast thermal transients
– Protection against loss of ground and loss of V
CC
– Thermal shutdown
– Reverse battery protection (see
Application schematic on page 21 )
Table 1.
Device summary
Package
PowerSSO-24™
Description
The VND5025AK-E is a monolithic device made using STMicroelectronics VIPower M0-5 technology, intended for driving resistive or inductive loads with one side connected to ground, and suitable for driving LEDs. Active V
CC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table). This device integrates an analog current sense which delivers a current proportional to the load current (according to a known ratio) when CS_DIS is driven low or left open. When CS_DIS is driven high, the
CURRENT SENSE pin is in a high impedance condition. Output current limitation protects the device in overload condition. In case of long overload duration, the device limits the dissipated power to safe level up to thermal shut-down intervention. Thermal shut-down with automatic restart allows the device to recover normal operation as soon as fault condition disappears.
Order codes
Tube
VND5025AK-E
Tape and reel
VND5025AKTR-E
September 2013 Doc ID 12581 Rev 11 1/32 www.st.com
1
2/32
Contents
Contents
VND5025AK-E
Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 21
Solution 1: resistor in the ground line (RGND only) . . . . . . . . . . . . . . . . 21
Solution 2: diode (DGND) in the ground line . . . . . . . . . . . . . . . . . . . . . 22
Maximum demagnetization energy (VCC = 13.5V) . . . . . . . . . . . . . . . . . 23
Package and thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
PowerSSO-24™ thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
ECOPACK® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Doc ID 12581 Rev 11
VND5025AK-E
List of tables
List of tables
Doc ID 12581 Rev 11 3/32
4/32
List of figures
List of figures
VND5025AK-E
Delay response time between rising edge of output current and rising edge of Current Sense
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Maximum current sense ratio drift vs load current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Rthj-amb vs PCB copper area in open box free air condition (one channel ON) . . . . . . . . 24
PowerSSO-24™ thermal impedance junction to ambient single pulse (one channel ON) . 25
Thermal fitting model of a double channel HSD in PowerSSO-24™
(1)
. . . . . . . . . . . . . . . 25
Doc ID 12581 Rev 11
VND5025AK-E
1
Block diagram and pin description
Block diagram and pin description
Figure 1.
Block diagram
Vcc
GND
INPUT1
INPUT2
V
CC
CLAMP
UNDERVOLTAGE
LOGIC
PwCLAMP 1
DRIVER 1
I
LIM
1
V
DSLIM
1
Pwr
LIM
1
OVERTEMP. 1
I
OUT1
K 1
Pwr
LIM
2
CS_DIS
DRIVER 2
PwCLAMP 2
I
LIM
2
V
DSLIM
2
I
OUT2
OVERTEMP. 2
K 2
OUTPUT1
CURRENT
SENSE1
OUTPUT2
CURRENT
SENSE2
Table 2.
Pin functions
Name
V
CC
OUTPUT
GND
INPUT
1,2
1,2
CURRENT SENSE
1,2
CS_DIS
Function
Battery connection.
Power output.
Ground connection; must be reverse battery protected by an external diode/resistor network.
Voltage controlled input pin with hysteresis, CMOS compatible; controls output switch state.
Analog current sense pin; delivers a current proportional to the load current.
Active high CMOS compatible pin to disable the current sense pin.
Doc ID 12581 Rev 11 5/32
Block diagram and pin description
Figure 2.
Configuration diagram (top view)
V
CC
GND
N.C.
INPUT2
N.C.
INPUT1
N.C.
CURRENT SENSE1
N.C.
CURRENT SENSE2
CS_DIS.
V
CC
5
6
7
8
3
4
1
2
9
10
11
12
20
19
18
17
24
23
22
21
16
15
14
13
OUTPUT2
OUTPUT2
OUTPUT2
OUTPUT2
OUTPUT2
OUTPUT2
OUTPUT1
OUTPUT1
OUTPUT1
OUTPUT1
OUTPUT1
OUTPUT1
TAB = V
CC
VND5025AK-E
Table 3.
Suggested connections for unused and not connected pins
Connection / pin N.C.
Output Input
Floating
Current sense
N.R.
(1)
X X
To Ground Through 1k Ω resistor X N.R.
X
Through 10k Ω resistor
CS_DIS
X
Through 10k Ω resistor
1. Not recommended.
6/32 Doc ID 12581 Rev 11
VND5025AK-E Electrical specification
Figure 3.
Current and voltage conventions
V
CSD
V
IN1
V
IN2
I
CSD
I
IN1
I
IN2
CS_DIS
INPUT1
INPUT2
I
S
GND
V
CC
V
F
I
OUT1
OUTPUT1
I
SENSE1
CURRENT
SENSE1
I
OUT2
V
SENSE1
OUTPUT2
CURRENT
SENSE2
I
SENSE2
V
SENSE2
V
OUT2
V
OUT1
I
GND
V
CC
Note: V
Fn
= V
OUTn
- V
CC
during reverse battery condition.
Stressing the device above the rating listed in the “Absolute maximum ratings” table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to the conditions in table below for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality document.
Table 4.
Symbol
Absolute maximum ratings
Parameter
V
CC
-V
CC
-I
GND
I
OUT
- I
OUT
I
IN
I
CSD
-I
CSENSE
V
CSENSE
DC supply voltage
Reverse DC supply voltage
DC reverse ground pin current
DC output current
Reverse DC output current
DC input current
DC current sense disable input current
DC reverse CS pin current
Current sense maximum voltage
Value
41
0.3
200
Internally limited
24
Unit
V mA
A
-1 to 10
200
V
CC
- 41 to +V
CC mA
V
Doc ID 12581 Rev 11 7/32
Electrical specification
Table 4.
Symbol
E
MAX
V
ESD
V
ESD
T j
T stg
Absolute maximum ratings (continued)
Parameter
Maximum switching energy (single pulse)
(L = 0.8mH; R
L
= 0 Ω ; V bat
I
OUT
= I limL
(Typ.))
= 13.5V; T jstart
= 150°C;
Electrostatic discharge
(Human Body Model: R = 1.5k
Ω
; C = 100pF)
- Input
- Current sense
- CS_DIS
- Output
- V
CC
Charge device model (CDM-AEC-Q100-011)
Junction operating temperature
Storage temperature
VND5025AK-E
Value
140
Unit mJ
4000
2000
4000
5000
5000
750
-40 to 150
-55 to 150
V
V
V
V
V
V
°C
Table 5.
Symbol
Thermal data
Parameter
R thj-case
Thermal resistance junction-case (MAX) (with one channel ON)
R thj-amb
Thermal resistance junction-ambient (MAX)
Max Value
1.35
See
Unit
°C/W
8/32 Doc ID 12581 Rev 11
VND5025AK-E Electrical specification
8V<V
CC
<36V; -40°C<T j
<150°C, unless otherwise specified.
Table 6.
Symbol
Power section
Parameter Test conditions
V
CC
V
USD
Operating supply voltage
Undervoltage shutdown
V
USDhyst
Undervoltage shut-down hysteresis
V
I
R clamp
I
L(off)
V
ON
S
F
On-state resistance
Clamp voltage
Supply current
(1)
Off-state output current
(1)
I
OUT
= 3A; T j
= 25°C
I
OUT
= 3A; T j
= 150°C
I
OUT
= 3A; V
CC
= 5V; T j
= 25°C
I
S
= 20 mA
Off-state; V
CC
V
IN
= V
OUT
= 13V; T
= V
SENSE j
= 25°C;
= V
CSD
= 0V
On-state; V
CC
= 13V;
V
IN
= 5V; I
OUT
= 0A
V
IN
= V
OUT
= 0V;
V
CC
= 13V; T j
= 25°C
V
IN
= V
OUT
= 0V;
V
CC
= 13V; T j
= 125°C
Output - V voltage
(1)
CC
diode
-I
OUT
= 4A; T j
= 150°C
1.
For each channel.
2.
PowerMOS leakage included.
Min.
Typ.
Max. Unit
4.5
13 36
3.5
4.5
V
0.5
41
0
0
46
2
(2)
3
0.01
25
50
35
52
5
(2)
6
3
5
0.7
m
V
V
Ω
µA mA
µA
Table 7.
Symbol
Switching (V
CC
= 13V; T j
= 25°C)
Parameter Test conditions Min.
t d(on) t d(off)
Turn-on delay time
Turn-off delay time
(dV
OUT
/dt) on
Turn-on voltage slope
(dV
OUT
/dt) off
Turn-off voltage slope
W
W
ON
OFF
Switching energy losses during t
W ON
Switching energy losses during t
W OFF
R
L
= 4.3
Ω
R
L
= 4.3
Ω
R
L
= 4.3
Ω
Typ.
35
50
0.45
0.35
Max.
Unit
µs
V/µs mJ
Doc ID 12581 Rev 11 9/32
Electrical specification VND5025AK-E
Table 8.
Symbol
V
IL
I
IL
V
IH
I
IH
V
I(hyst)
Logic input
Parameter
Input low level voltage
Low level input current
Input high level voltage
High level input current
Input hysteresis voltage
V
ICL
Input clamp voltage
V
CSDL
I
CSDL
V
CSDH
I
CSDH
V
CSD(hyst)
CS_DIS low level voltage
Low level CS_DIS current
CS_DIS high level voltage
High level CS_DIS current
CS_DIS hysteresis voltage
V
CSCL
CS_DIS clamp voltage
I
I
I
I
V
V
IN
IN
IN
IN
V
V
Test conditions
= 1mA
= -1mA
CSD
CSD
CSD
CSD
= 0.9V
= 2.1V
= 0.9V
= 2.1V
= 1mA
= -1mA
Min.
Typ.
Max.
Unit
0.9
1
2.1
10
V
µA
V
µA
0.25
5.5
7
V
-0.7
0.9
1
2.1
10
µA
V
µA
0.25
5.5
7 V
-0.7
Table 9.
Symbol
Protection and diagnostics
(1)
Parameter Test conditions Min.
Typ.
Max.
Unit
I
I
LIMH
LIML
DC short circuit current
Short circuit current during thermal cycling
V
CC
= 13V
5V < V
CC
< 36V
V
CC
T
R
= 13V;
< T j
< T
TSD
29 41
16
57
A
T
TSD
T
R
T
RS
Shutdown temperature
Reset temperature
Thermal reset of STATUS
150 175
T
RS
+ 1 T
RS
+ 5
135
200
°C
T
HYST
Thermal hysteresis
(T
TSD
-T
R
)
7
V
DEMAG
V
ON
Turn-off output voltage clamp
Output voltage drop limitation
I
OUT
= 2A;
V
IN
= 0;
L = 6mH
I
OUT
T j
= 0.20.1A;
= -40°C to +150°C
V
CC
- 41 V
CC
- 46 V
CC
- 52 V
25 mV
1.
To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration and number of activation cycles.
10/32 Doc ID 12581 Rev 11
VND5025AK-E Electrical specification
Table 10.
Current sense (8V < V
CC
< 16V)
Symbol Parameter Test conditions
K dK
0
LED
K
/K
K
0
1
0
(1) dK
1
/K
1
(1) dK dK
I
V
V
2
3
I
K
/K
K
2
3
/K
2
(1)
3
(1)
SENSE0
OL
SENSE
SENSEH
Min. Typ. Max. Unit
I
I
I
I
I
OUT
OUT
OUT
OUT
/I
/I
/I
SENSE
SENSE
Current Sense ratio drift
SENSE
Current Sense ratio drift
Current Sense ratio drift
OUT
/I
/I
SENSE
SENSE
Current Sense ratio drift
I
OUT
T j
= 0.05A; V
SENSE
= -40°C to 150°C
= 0.5V; V
CSD
= 0V;
1450 3300 5180
I
OUT
T j
= 0.5 A; V
SENSE
= -40°C to 150°C
= 0.5V; V
CSD
= 0V;
1720 3020 4360
I
OUT
T j
= 0.5A; V
SENSE
= -40°C to 150°C
= 0.5V; V
CSD
= 0V;
I
OUT
= 2A; V
SENSE
= 4V;
V
CSD
= 0V;
T j
= -40°C to 150°C
T j
= 25°C to 150°C
-12
1940
2230
2810
2810
+12
3740
3390
%
I
OUT
= 2A; V
SENSE
= 4V;
V
CSD
= 0V;
T j
= -40°C to 150°C
I
OUT
= 3A; V
SENSE
= 4V;
V
CSD
= 0V;
T j
= -40°C to 150°C
T j
= 25°C to150°C
I
OUT
T j
= 3A; V
SENSE
= -40°C to 150°C
= 4V; V
CSD
= 0V;
I
OUT
= 10A; V
SENSE
= 4V;
V
CSD
= 0V;
T j
= -40°C to 150°C
T j
= 25°C to 150°C
I
OUT
= 10A; V
SENSE
= 4V; V
CSD
= 0V;
T j
= -40°C to 150°C
I
OUT
= 0A; V
SENSE
= 0V;
V
CSD
= 5V; V
IN
V
CSD
= 0V; V
IN
= 0V; T j
= -40°C to 150°C
= 5V; T j
= -40°C to 150°C
-10 +10
2250
2400
2790
2790
3450
3180
-7 +7
2610
2650
2760
2760
2970
2870
-4
0
0
+4
1
2
%
%
%
µA
µA Analog Sense leakage current
I
OUT
= 2A; V
SENSE
= 0V;
V
CSD
= 5V; V
IN
= 5V; T j
= -40°C to 150°C 0
Openload onstate current detection threshold
Max analog
Sense output voltage
I
V
IN
OUT
= 5V, I
SENSE
= 3 A; V
CSD
= 5 µA 5
= 0V 5
Analog Sense output voltage in over temperature condition
V
CC
= 13V; R
SENSE
= 3.9k
Ω 9
1
30
µA mA
V
Doc ID 12581 Rev 11 11/32
Electrical specification VND5025AK-E
Table 10.
Current sense (8V < V
CC
< 16V) (continued)
Symbol Parameter Test conditions t t
I
SENSEH
DSENSE1H
DSENSE1L
Analog Sense output current in over temperature condition
V
CC
= 13V; V
SENSE
= 5V
Delay response time from falling edge of CS_DIS pin
V
SENSE
I
SENSE
< 4V, 0.5 < I
OUT
< 10A
= 90% of I
SENSEMAX
(see
)
Delay response time from rising edge of CS_DIS pin
V
SENSE
I
SENSE
< 4V, 0.5 < I
OUT
< 10A
= 10% of I
SENSEMAX
(see
) t
DSENSE2H
Delay response time from rising edge of INPUT pin
V
SENSE
I
SENSE
< 4V, 0.5 < I
OUT
< 10A
= 90% of I
SENSEMAX
(see
)
Δ t
DSENSE2H
Delay response time between rising edge of output current and rising edge of current sense t
DSENSE2L
V
SENSE
< 4V,
I
SENSE
= 90% of I
SENSEMAX,
I
OUT
= 90% of I
(see
)
OUTMAX
, I
OUTMAX
= 3A
Delay response time from falling edge of INPUT pin
V
SENSE
I
SENSE
< 4V, 0.5 < I
OUT
< 10A
= 10% of I
SENSEMAX
(see
)
1.
Parameter guaranteed by design; it is not tested.
Min. Typ. Max. Unit
8
50 100
70 300
µs
200
100 250 mA
5 20
Figure 4.
Current sense delay characteristics
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT t
DSENSE2H t
DSENSE1L t
DSENSE1H t
DSENSE2L
12/32 Doc ID 12581 Rev 11
VND5025AK-E Electrical specification
Figure 5.
Delay response time between rising edge of output current and rising edge of Current Sense (CS enabled)
V
IN
Δ t
DSENSE2H t
I
OUT
90% I
OUTMAX
I
OUTMAX t
I
SENSE I
SENSEMAX
90% I
SENSEMAX t
Figure 6.
Switching characteristics
V
OUT t
Won
80% dV
OUT
/dt
(on) t r
10%
INPUT t d(on) t d(off) t
Woff
90% t f dV
OUT
/dt
(off) t t
Doc ID 12581 Rev 11 13/32
Electrical specification
Figure 7.
I
OUT
/I
SENSE
vs I
OUT
I out
/ I sense
4500
4000
3500 max Tj = -40 °C to 150 °C
3000 max Tj = 25 °C to 150 °C
2500 min Tj = 25 °C to 150 °C
2000 min Tj = -40 °C to 150 °C
1500 typical value
1000
2 4 6
I
OUT
(A)
8
1.
See
for details.
Figure 8.
Maximum current sense ratio drift vs load current
dk/k(%)
15
10
VND5025AK-E
10
5
0
-5
-10
-15
2 3 4
1.
Parameter guaranteed by design; it is not tested.
5 6
I
OUT
(A)
7 8 9 10
14/32 Doc ID 12581 Rev 11
VND5025AK-E Electrical specification
Table 11.
Truth table
Conditions
Normal operation
Input
L
H
Output
L
H
Sense (V
CSD
= 0V)
(1)
0
Nominal
Over temperature
L
H
L
0
V
SENSEH
Undervoltage
L
H
L
L 0
0
Short circuit to GND (R
SC
Short circuit to V
CC
≤
10m Ω )
H
L
H
L
H
0 if T j
< T
TSD
V
SENSEH
if T j
> T
TSD
0
< Nominal
Negative output voltage clamp L L 0
1.
If the V
CSD
is high, the SENSE output is at a high impedance; its potential depends on leakage currents and external circuit.
Figure 9.
Output voltage drop limitation
V
CC
- V
OUT
T j
= 150 o
C
T j
= 25 o
C
T j
= -40 o
C
V on
V on
/R on(T)
I
OUT
Doc ID 12581 Rev 11 15/32
Electrical specification VND5025AK-E
Table 12.
Electrical transient requirements (part 1/3)
ISO 7637-2:
2004(E)
Test pulse
III
Test levels
(1)
IV
Number of pulses or test times
Burst cycle/pulse repetition time
Min.
Max.
1
2a
-75V
+37V
-100V
+50V
5000 pulses
5000 pulses
0.5s
0.2s
5s
5s
3a -100V -150V 1h 90ms 100ms
3b +75V
-6V
+100V
-7V
1h
1 pulse
90ms 100ms
4
5b
(2)
+65V +87V 1 pulse
1.
The above test levels must be considered referred to V
CC
= 13.5V except for pulse 5b.
2.
Valid in case of external load dump clamp: 40V maximum referred to ground.
Delays and
Impedance
2 ms, 10 Ω
50µs, 2 Ω
0.1µs, 50
Ω
0.1µs, 50
Ω
100ms, 0.01
Ω
400ms, 2 Ω
Table 13.
Electrical transient requirements (part 2/3)
Test level results ISO 7637-2:
2004E
Test pulse III
1
2a
3a
C
C
C
3b C
5b
4
(1)
C
C
1.
Valid in case of external load dump clamp: 40V maximum referred to ground.
VI
C
C
C
C
C
C
Table 14.
Electrical transient requirements (part 3/3)
Class Contents
C
E
All functions of the device performed as designed after exposure to disturbance.
One or more functions of the device did not perform as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device.
16/32 Doc ID 12581 Rev 11
VND5025AK-E
Figure 10.
Waveforms
NORMAL OPERATION
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
UNDERVOLTAGE
V
USDhyst
V
CC
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
V
USD
INPUT
CS_DIS
LOAD VOLTAGE
LOAD CURRENT
SENSE CURRENT
< Nominal
SHORT TO V
CC
< Nominal
Electrical specification
OVERLOAD OPERATION
T
R
T
TSD
T
RS
T j
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
Current limitation
Power limitation
SHORTED LOAD
Thermal cycling
I
LIMH
I
LIML
V
SENSEH
NORMAL LOAD
Doc ID 12581 Rev 11 17/32
Electrical specification VND5025AK-E
Figure 11.
Off-state output current
Iloff (uA)
0.5
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
-50 -25
Off State
Vcc=13V
Vin=Vout=0V
0 25 50 75
Tc (°C)
100 125 150 175
Figure 13.
Input clamp voltage
Vicl (V)
7
6.75
6.5
6.25
6
5.75
5.5
Iin=1mA
5.25
5
-50 -25 0 25 50 75
Tc (°C)
100 125 150 175
Figure 15.
Input low level
Vil (V)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50 -25 0 25 50 75
Tc (°C)
100 125 150 175
Figure 12.
High level input current
4
3.5
3
2.5
Iih(uA)
5
4.5
2
1.5
1
0.5
0
-50 -25
Vin=2.1V
0 25 50 75
Tc (°C)
100 125 150 175
Figure 14.
Input high level
Vih (V)
4
3.5
3
2.5
2
1.5
1
0.5
0
-50 -25 0 25 50 75
Tc (°C)
100 125 150 175
Figure 16.
Input hysteresis voltage
Vhyst (V)
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-50 -25 0 25 50 75
Tc (°C)
100 125 150 175
18/32 Doc ID 12581 Rev 11
VND5025AK-E
Figure 17.
On-state resistance vs T case
Ron (mOhm)
100
90
80
70
Iout=3A
Vcc=13V
60
50
40
30
20
10
0
-50 -25 0 25 50 75
Tc (°C)
100 125 150 175
Figure 19.
Undervoltage shutdown
Vusd (V)
16
10
8
14
12
6
4
2
0
-50 -25 0 25 50 75
Tc (°C)
100 125 150 175
Figure 21.
Turn-on voltage slope
(dVout/dt)on (V/ms)
1000
900
800
700
Vcc=13V
Rl=4.3Ohm
600
500
400
300
200
100
0
-50 -25 0 25 50 75
Tc (°C)
100 125 150 175
Electrical specification
Figure 18.
On-state resistance vs V
CC
Ron (mOhm)
80
70
60
50
40
30
20
10
0
0 5 10
Tc=150°C
Tc= 125°C
Tc= 25°C
Tc= -40°C
15 20
Vcc (V)
25 30 35 40
Figure 20.
I
LIMH
vs T case
Ilimh (A)
100
90
80
70
60
50
40
30
20
10
0
-50 -25
Vcc=13V
0 25 50 75
Tc (°C)
100 125 150 175
Figure 22.
Turn-off voltage slope
(dVout/dt)off (V/ms)
1000
900
800
Vcc=13V
Rl=4.3Ohm
700
600
500
400
300
200
100
0
-50 -25 0 25 50 75
Tc (°C)
100 125 150 175
Doc ID 12581 Rev 11 19/32
20/32
Electrical specification
Figure 23.
CS_DIS high level voltage
Vcsdh (V)
4
3.5
3
2.5
2
1.5
1
0.5
0
-50 -25 0 25 50 75
Tc (°C)
100 125 150 175
Figure 25.
CS_DIS clamp voltage
Vcsdcl (V)
8
7.5
7
Icsd=1mA
6.5
6
5.5
5
4.5
4
-50 -25 0 25 50 75
Tc (°C)
100 125 150 175
VND5025AK-E
Figure 24.
CS_DIS low level voltage
Vcsdl (V)
4
3.5
3
2.5
2
1.5
1
0.5
0
-50 -25 0 25 50 75
Tc (°C)
100 125 150 175
Doc ID 12581 Rev 11
VND5025AK-E Application information
Figure 26.
Application schematic
+5V
R prot CS_DIS
µC
V
CC
C
R prot
R prot
EXT
INPUT
R
CURRENT SENSE
SENSE
GND
V
GND
R
GND
D
GND
OUTPUT
D ld
Note:
3.1
3.1.1
Channel 2 has the same internal circuit as channel 1.
GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against reverse battery.
Solution 1: resistor in the ground line (R
GND
only)
This first solution can be used with any type of load.
The following formulas indicate how to dimension the R
GND resistor:
1.
R
GND
≤
600mV / (I
S(on)max
)
2. R
GND
≥ (-V
CC
) / (-I
GND
) where -I
GND
is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device datasheet.
Power Dissipation in R
GND
(when V
CC
P
D
= (-V
CC
)
2
/ R
GND
< 0 during reverse battery situations) is:
This resistor can be shared among several different HSDs. Please note that the value of this resistor is calculated with formula (1), where I
S(on)max state currents of the different devices.
becomes the sum of the maximum on-
Please note that if the microprocessor ground is not shared by the device ground, the R
GND produces a shift (I
S(on)max
* R
GND
) in the input thresholds and the status output values. This shift varies depending on how many devices are ON in the case of several high-side drivers sharing the same R
GND
.
Doc ID 12581 Rev 11 21/32
22/32
Application information
3.1.2
VND5025AK-E
If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor, then ST suggests to utilize the following Solution 2.
Solution 2: diode (D
GND
) in the ground line
If the device drives an inductive load, insert a resistor (R
GND
= 1k
Ω
) in parallel to D
GND
.
This small signal diode can be safely shared among several different HSDs. Also in this case, the presence of the ground network produces a shift (
≈
600mV) in the input threshold and in the status output values if the microprocessor ground is not common to the device ground. This shift does not vary if more than one HSD shares the same diode/resistor network.
3.2 Load dump protection
D ld
is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
V
CC
maximum DC rating. The same applies if the device is subject to transients on the V
CC line that are greater than the ones shown in the ISO 7637-2:2004E table.
3.3 MCU I/Os protection
If a ground protection network is used and negative transients are present on the V
CC
line, the control pins are pulled negative. ST suggests to insert an in-line resistor (R prot
) to prevent the µC I/Os pins from latch-up.
The value of these resistors is a compromise between the leakage current of µC and the current required by the HSD I/Os (input levels compatibility) with the latch-up limit of µC
I/Os.
-V
CCpeak
/I latchup
≤
R prot
≤
(V
OHµC
-V
IH
-V
GND
) / I
IHmax
Calculation example:
For V
CCpeak
= -100V and I latchup
≥
20mA; V
OHµC
≥
4.5V
5k Ω ≤
R prot
≤
180k Ω
Recommended values: R prot
= 10k Ω , C
EXT
= 10nF.
Doc ID 12581 Rev 11
VND5025AK-E
3.4
Application information
Maximum demagnetization energy (V
CC
= 13.5V)
Figure 27.
Maximum turn-off current versus inductance (for each channel)
100
C
A
B
10
1
0,1 1 L (mH) 10 100
A: T jstart
= 150°C single pulse
B: T jstart
= 100°C repetitive pulse
C: T jstart
= 125°C repetitive pulse
V
IN
, I
L
Demagnetization Demagnetization Demagnetization
Note: t
Values are generated with R
L
= 0
Ω.
In case of repetitive pulses, T jstart
(at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves A and B.
Doc ID 12581 Rev 11 23/32
Package and thermal data
4 Package and thermal data
4.1 PowerSSO-24™ thermal data
Figure 28.
PowerSSO-24™ PC board
VND5025AK-E
Note: Layout condition of R th
and Z th
measurements (PCB: Double layer, Thermal Vias, FR4 area = 77mm x 86mm, PCB thickness = 1.6mm, Cu thickness = 70µm (front and back side),
Copper areas: from minimum pad layout to 8cm
2
).
Figure 29.
R thj-amb
vs PCB copper area in open box free air condition (one channel
ON)
RTHj_amb(°C/W)
55
50
45
40
35
30
0 2 4 6
PCB Cu heatsink area (cm^2)
8 10
24/32 Doc ID 12581 Rev 11
VND5025AK-E Package and thermal data
Figure 30.
PowerSSO-24™ thermal impedance junction to ambient single pulse (one channel ON)
ZTH (°C/W)
1000
100
10
1
Footprint
2 cm
2
8 cm
2
0.1
0.0001
0.001
0.01
0.1
Time (s)
1 10 100 1000
Equation 1: pulse calculation formula
Z
TH δ = R
TH where
δ
= t
P
/T
⋅ δ
+ Z
THtp
(
1 –
δ )
Figure 31.
Thermal fitting model of a double channel HSD in PowerSSO-24™
1.
The fitting model is a semplified thermal tool and is valid for transient evolutions where the embedded protections (power limitation or thermal cycling during thermal shutdown) are not triggered.
Doc ID 12581 Rev 11 25/32
Package and thermal data
Table 15.
Thermal parameters
Area/Island (cm
2
) Footprint
R1 (°C/W)
R2 (°C/W)
R3 (°C/W)
R4 (°C/W)
R5 (°C/W)
R6 (°C/W)
R7 (°C/W)
R8 (°C/W)
C1 (W.s/°C)
C2 (W.s/°C)
C3 (W.s/°C)
C4 (W.s/°C)
C5 (W.s/°C)
C6 (W.s/°C)
C7 (W.s/°C)
C8 (W.s/°C)
0.28
0.9
0.001
0.003
0.025
0.75
1
0.28
0.9
6
7.7
9
28
2.2
0.001
0.003
2
9
17
4
5
VND5025AK-E
8
8
10
9
17
26/32 Doc ID 12581 Rev 11
VND5025AK-E
5
Package and packing information
Package and packing information
5.1 ECOPACK
®
packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
Figure 32.
PowerSSO-24™ package dimensions
Doc ID 12581 Rev 11 27/32
Package and packing information
Table 16.
PowerSSO-24™ mechanical data
Symbol
Min h k
G
H e e3
F
A
A2
D
E a1 b c
L
O
Q
S
T
U
N
X
Y
2.15
0
0.33
0.23
10.10
7.4
10.1
0°
0.55
4.1
6.5
Millimeters
Typ
0.8
8.8
2.3
1.2
0.8
2.9
3.65
1.0
VND5025AK-E
Max
2.45
2.35
0.1
0.51
0.32
10.50
7.6
0.1
10.5
0.4
8°
0.85
10°
4.7
7.1
28/32 Doc ID 12581 Rev 11
VND5025AK-E Package and packing information
Figure 33.
PowerSSO-24™ tube shipment (no suffix)
C
B
Base Qty
Bulk Qty
Tube length (±0.5)
A
B
C (±0.1)
All dimensions are in mm.
49
1225
532
3.5
13.8
0.6
A
Figure 34.
PowerSSO-24™ tape and reel shipment (suffix “TR”)
REEL DIMENSIONS
Base Qty
Bulk Qty
A (max)
B (min)
C (±0.2)
F
G (+2 / -0)
N (min)
T (max)
1000
1000
330
1.5
13
20.2
24.4
100
30.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
W
P0 (±0.1)
D1 (min)
F (±0.1)
K (max)
P1 (±0.1)
24
4
P 12
D (±0.05) 1.55
1.5
11.5
2.85
2
All dimensions are in mm.
End
Top cover tape
No components Components No components
500mm min 500mm min
Empty components pockets sealed with cover tape.
Start
User direction of feed
Doc ID 12581 Rev 11 29/32
Revision history VND5025AK-E
30/32
Table 17.
Document revision history
Date Revision
11-Apr-2006
30-Mar-2007
01-Jun-2007
03-Jul-2007
24-Jul-2007
12-Dec-2007
12-Feb-2008
10-Apr-2008
02-Jul-2009
1
2
3
4
5
6
7
8
9
Changes
Initial release
Reformatted.
MAX
entries.
F
test conditions.
j
condition to 25°C”
: added dK
1
/K
1
, dK
2
/K
2
, dK
3
/K
3
, Δ t
DSENSE2H
, t
DSENSE2H
values and note.
Added
Updated
.
Added
Figure 8: Maximum current sense ratio drift vs load current
: Updated Test Level values III and IV for test pulse 5b and notes.
Added
Section 3.4: Maximum demagnetization energy
.
Added
ECOPACK® packages information.
Figure 31: Thermal fitting model of a double channel HSD in
: added note.
Updated
and Figure 2: Configuration diagram (top view)
.
Updated
Table 16: PowerSSO-24™ mechanical data
.
Updated
Table 10: Current sense (8V < VCC < 16V) :
– added dK
0
/K
0 values
– changed dK
3
/K
3 values from ± 3 to ± 4%
– changed Δ t
DSENSE2H
value from 110 to 200 µs
– added I
OL parameter
Updated
Figure 8: Maximum current sense ratio drift vs load current
with new dK/K values.
Corrected typing error in Table 10: Current sense (8V < VCC < 16V)
: changed I
OL test condition from V
IN
= 0V to V
IN
= 5V.
Corrected Figure 27: Maximum turn-off current versus inductance (for each channel)
Table 16: PowerSSO-24™ mechanical data
:
– Deleted A (min) value
– Changed A (max) value from 2.47 to 2.45
– Changed A2 (max) value from 2.40 to 2.35
– Changed a1 (max) value from 0.075 to 0.1
– Added F row
– Updated k values
Doc ID 12581 Rev 11
VND5025AK-E Revision history
Table 17.
Document revision history (continued)
Date Revision Changes
23-Jul-2009
23-Sep-2013
10
11
Updated
Figure 32: PowerSSO-24™ package dimensions
.
Updated
Table 16: PowerSSO-24™ mechanical data
:
– Deleted G1 row
– Added O, Q, S, T and U rows
Updated Disclaimer.
Doc ID 12581 Rev 11 31/32
VND5025AK-E
Please Read Carefully:
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