STMicroelectronics VN5E016AFH-E Datasheet
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VN5E016AFH-E
16 m Ω high-side driver with analog current sense for automotive applications
Features
Max supply voltage
Operating voltage range
V
CC
V
CC
Max on-state resistance (per ch.) R
ON
Current limitation (typ) I
LIMH
Off-state supply current I
S
1.
Typical value with all loads connected.
41V
4.5 to 28V
16 m Ω
73 A
2 µA
(1)
■
■
■
General
– Inrush current active management by power limitation
– Very low standby current
– 3.0 V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
European directive
Diagnostic functions
– Proportional load current sense
– High current sense precision for wide current range
– Current sense disable
– Off-state open-load detection
– Output short to V
CC indication
– Overload and short to ground (power limitation) indication
– Thermal shutdown indication
Protections
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss of V
CC
– Overtemperature shutdown with auto restart (thermal shutdown)
HPak
– Reverse battery protected
– Electrostatic discharge protection
Applications
■
■
All types of resistive, inductive and capacitive loads
Suitable as LED driver
Description
The VN5E016AFH-E is a single channel high-side driver manufactured using ST proprietary
VIPower™ M0-5 technology and housed in HPak package. The device is designed to drive 12 V automotive grounded loads, and delivering protection and diagnostics. It also implements 3 V and 5 V CMOS compatible interface for use with any microcontroller.
The device integrates advanced protective functions such as load current limitation, inrush and overload active management by power limitation, overtemperature shut-off with auto restart and overvoltage active clamp.
A dedicated analog current sense pin is associated with every output channel providing enhanced diagnostic functions. These functions include fast detection of overload and short-circuit to ground through power limitation indication, overtemperature indication, short-circuit to V
CC diagnosis and ON-state and OFF-state open-load detection.
The current sensing and diagnostic feedback of the whole device can be disabled by pulling the
CS_DIS pin high to share external sense resistor with similar devices .
September 2013 Doc ID 18043 Rev 2 1/37 www.st.com
1
Contents
Contents
VN5E016AFH-E
Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 24
Solution 1: resistor in the ground line (RGND only) . . . . . . . . . . . . . . . . 24
Solution 2: a diode (DGND) in the ground line . . . . . . . . . . . . . . . . . . . 25
Current sense and diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Short to VCC and OFF-state open-load detection . . . . . . . . . . . . . . . . . 27
Maximum demagnetization energy (VCC = 13.5V) . . . . . . . . . . . . . . . . . 28
Package and PC board thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
®
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
2/37 Doc ID 18043 Rev 2
VN5E016AFH-E
List of tables
List of tables
CC
= 13 V, T j
= 25 °C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
< 18 V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
< 18 V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Doc ID 18043 Rev 2 3/37
List of figures
List of figures
VN5E016AFH-E
Delay response time between rising edge of output current and rising edge of current sense
OUT
/I
SENSE
vs I
OUT
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
J
evolution in overload or short to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
case
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
LIMH
vs T case
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Thermal fitting model of a single channel HSD in HPak
. . . . . . . . . . . . . . . . . . . . . . . . . . 30
4/37 Doc ID 18043 Rev 2
VN5E016AFH-E
1
Block diagram and pin description
Block diagram and pin description
Figure 1.
Block diagram
V
CC
Signal Clamp
Undervoltage
IN
CS_
DIS
CS
LOGIC
Control & Diagnostic
Power
Clamp
DRIVER
V
ON
Limitation
Over temp.
Current
Limitation
OFF State
Open load
V
SENSEH
Current
Sense
OVERLOAD PROTECTION
(ACTIVE POWER LIMITATION)
OUT
GND
Table 1.
Name
Pin functions
Function
V
CC
OUTPUT
GND
INPUT
Battery connection
Power output
(1)
Ground connection
Voltage controlled input pin with hysteresis, CMOS compatible. Controls output switch state
CURRENT
SENSE
CS_DIS
Analog current sense pin, delivers a current proportional to the load current
Active high CMOS compatible pin, to disable the current sense pin
1.
Pins 1 and 7 must be externally tied together.
Doc ID 18043 Rev 2 5/37
Block diagram and pin description
Figure 2.
Configuration diagram (top view) not in scale
VN5E016AFH-E
1 2 3 4 5 6 7
OUT GND IN Vcc CS CS_DIS OUT
Table 2.
Suggested connections for unused and not connected pins
Connection / pin Current sense Output Input
Floating
To ground
Not allowed
Through 1 k Ω resistor
X
Through 22 k Ω resistor
X
Through 10 k Ω resistor
CS_DIS
X
Through 10 k Ω resistor
6/37 Doc ID 18043 Rev 2
VN5E016AFH-E Electrical specifications
Figure 3.
Current and voltage conventions
V
CSD
I
CSD
I
IN
V
IN
V
CC
OUTPUT CS_DIS
INPUT
GND
CURRENT
SENSE
I
GND
I
SENSE
V
SENSE
I
S
I
OUT
V
OUT
V
CC
2.1 Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality document.
Table 3.
Symbol
V
CC
-V
CC
I
GND
Absolute maximum ratings
Parameter
DC supply voltage
Reverse DC supply voltage
DC reverse ground pin current
DC output current I
OUT
-I
OUT
I
IN
I
CSD
Reverse DC output current
DC input current
DC current sense disable input current
V
CSENSE
Current sense maximum voltage (V
CC
>0)
Value
41
0.3
200
Internally limited
20
-1 to 10
-1 to 10
V
CC
-41
+V
CC
A mA mA
V
V
Unit
V
V mA
A
E
MAX
Maximum switching energy (single pulse)
(L = 1.55 mH; R
L
= 0 Ω ; V bat
= 13.5V; T jstart
= 150ºC;
I
OUT
= I limL
(Typ.) )
350 mJ
Doc ID 18043 Rev 2 7/37
Electrical specifications
Table 3.
Symbol
V
ESD
V
ESD
T j
T stg
Absolute maximum ratings (continued)
Parameter
Electrostatic discharge (human body model: R = 1.5K
Ω;
C = 100pF)
– Input
– Current sense
– CS_DIS
– Output
– V
CC
Charge device model (CDM-AEC-Q100-011)
Junction operating temperature
Storage temperature
VN5E016AFH-E
Value Unit
4000
2000
4000
5000
5000
750
-40 to 150
-55 to 150
V
V
V
V
V
V
°C
°C
Table 4.
Symbol
Thermal data
Parameter
R thj-case
R thj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
Max. value
0.63
69.3
Unit
°C/W
°C/W
8/37 Doc ID 18043 Rev 2
VN5E016AFH-E Electrical specifications
Values specified in this section are for 8 V < V
CC otherwise specified.
< 28 V, -40 °C < T j
< 150 °C, unless
Table 5.
Symbol
Power section
Parameter
V
CC
V
USD
Operating supply voltage
Undervoltage shutdown
V
USDhyst
Undervoltage shutdown hysteresis
Test conditions
R
ON
On-state resistance
I
OUT
= 5 A; T j
= 25 °C
I
OUT
= 5 A; T j
= 150 °C
I
OUT
= 5 A; V
CC
= 5 V; T j
= 25 °C
V
I
F
V clamp
S
Output - V
CC
diode voltage
Clamp Voltage
Supply current
I
L(off1)
Off-state output current
-I
OUT
= 5 A; T j
= 150 °C
I cc
= 20 mA; I
OUT
= 0 A
Off-state; V
CC
= 13 V; T j
= 25 °C;
V
IN
= V
OUT
= V
SENSE
= 0V
On-state; V
CC
= 13V; V
IN
= 5V;
I
OUT
= 0A
V
IN
= V
OUT
= 0 V; V
CC
= 13 V;
T j
= 25 °C
V
IN
= V
OUT
= 0 V; V
CC
= 13 V;
T j
= 125 °C
Min.
Typ.
Max. Unit
4.5
13
3.5
28
4.5
V
V
41
0
0
0.5
46
2
1.5
0.01
16
32
20
0.7
52
5
3
3
5
V m Ω
V
V
µA mA
µA
Table 6.
Symbol
Switching (V
CC
= 13 V, T j
= 25 °C)
Min.
t d(on) t d(off)
(dV
OUT
/dt) on
(dV
OUT
/dt) off
W
ON
W
OFF
Turn-on delay time R
L
= 2.6 Ω (see
) —
Turn-off delay time R
L
= 2.6
Ω
(see
) —
Turn-on voltage slope R
L
= 2.6 Ω —
Turn-off voltage slope R
L
= 2.6 Ω —
Switching energy losses at turn-on (t won
)
Switching energy losses at turn-off (t woff
)
R
L
= 2.6 Ω
) —
R
L
= 2.6 Ω
) —
Typ.
15
45
0.2
0.2
1.4
0.8
—
—
—
—
Max.
Unit
µs
µs
V / µs
V / µs
— mJ
— mJ
Doc ID 18043 Rev 2 9/37
Electrical specifications VN5E016AFH-E
Table 7.
Symbol
Logic Inputs
Parameter
V
IL
I
IL
V
IH
I
IH
V
I(hyst)
Input low level voltage
Low level input current
Input high level voltage
High level input current
Input hysteresis voltage
V
ICL
Input clamp voltage
V
CSDL
I
CSDL
V
CSDH
I
CSDH
CS_DIS low level voltage
Low level CS_DIS current
CS_DIS high level voltage
High level CS_DIS current
V
CSD(hyst)
CS_DIS hysteresis voltage
V
CSCL
CS_DIS clamp voltage
Test conditions
V
IN
= 0.9 V
V
IN
= 2.1 V
I
IN
= 1 mA
I
IN
= -1 mA
V
CSD
= 0.9 V
V
CSD
= 2.1 V
Min.
Typ.
Max.
Unit
0.9
1
2.1
0.25
5.5
10
7
V
µA
V
µA
V
V
-0.7
1
2.1
0.25
5.5
0.9
10
7
V
µA
V
µA
V
V
-0.7
I
CSD
= 1 mA
I
CSD
= -1 mA
Table 8.
Symbol
Protection and diagnostics (1)
Parameter Test conditions Min.
Typ.
Max.
Unit
I
I limH limL
T
TSD
T
T
T
R
RS
HYST
Short circuit current
Short circuit current during thermal cycling
Shutdown temperature
Reset temperature
Thermal reset of status
Thermal hysteresis
(T
TSD
-T
R
)
Turn-off output voltage clamp
V
CC
= 13 V
5 V < V
CC
< 28 V
V
T
CC
R
= 13 V;
< T j
< T
TSD
54
150
73
18
175
T
RS
+ 1 T
RS
+ 5
135
7
108
108
200
A
A
A
°C
V
DEMAG
I
OUT
= 2 A; V
IN
= 0;
L = 6 mH
V
CC
-41 V
CC
-46 V
CC
-52 V
V
ON
Output voltage drop limitation
I
OUT
= 0.5 A;
T j
= -40 °C...150 °C
25
1.
To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration and number of activation cycles mV
°C
°C
°C
10/37 Doc ID 18043 Rev 2
VN5E016AFH-E Electrical specifications
Table 9.
Symbol
Current sense (8 V < V
CC
< 18 V)
Parameter Test conditions dK dK dK
I
K
K
1
/K
K
2
/K
K
0
1
2
3
3
/K
1
(1)
2
(1)
3
(1)
SENSE0
V
I
OL
SENSE
I
I
I
I
OUT
OUT
OUT
OUT
/I
/I
/I
/I
SENSE
SENSE
Current sense ratio drift
SENSE
Current sense ratio drift
SENSE
Current sense ratio drift
Analog sense leakage current
I
OUT
= 0.25 A; V
SENSE
= 0.5 V
T j
= -40 °C...150 °C
I
OUT
= 5 A; V
SENSE
= 0.5 V
T j
= -40 °C...150 °C
T j
= 25 °C...150 °C
I
OUT
= 5A; V
SENSE
= 0.5V;
V
CSD
= 0 V;
T
J
= -40 °C to 150 °C
I
OUT
= 10A; V
SENSE
= 4V
T j
= -40 °C...150 °C
T j
= 25 °C...150 °C
I
OUT
= 10 A; V
SENSE
= 4 V;
V
CSD
= 0 V;
T
J
= -40 °C to 150 °C
I
OUT
= 25A; V
SENSE
= 4V
T j
= -40 °C...150 °C
T j
= 25 °C...150 °C
I
OUT
= 25 A; V
SENSE
= 4 V;
V
CSD
= 0 V;
T
J
= -40 °C to 150 °C
I
OUT
= 0 A; V
SENSE
= 0 V;
V
CSD
= 5 V; V
IN
= 0 V;
T j
= -40 °C...150 °C
I
OUT
= 0 A; V
SENSE
= 0 V;
V
CSD
= 0 V; V
IN
= 5 V;
T j
= -40 °C...150 °C
I
OUT
= 2 A; V
SENSE
= 0 V;
V
CSD
= 5 V; V
IN
= 5 V;
T j
= -40 °C...150 °C
Openload ON-state current detection threshold
Max analog sense output voltage
I
I
V
IN
OUT
= 5 V;
SENSE
= 5 µA
= 18 A; R
SENSE
= 3.9 K Ω
V
SENSEH
(2)
Analog sense output voltage in fault condition
V
CC
= 13 V; R
SENSE
= 3.9 K Ω t
I
SENSEH
(2)
DSENSE1H
Analog sense output current in fault condition
V
CC
= 13 V; V
SENSE
= 5 V
Delay response time from falling edge of
CS_DIS pin
V
SENSE
< 4 V;
1.5 A < I out
< 25 A
I
SENSE
= 90% of I
SENSE max
(see
)
Min.
Typ.
Max.
Unit
2950 6490 9400 —
4540
4540
5130
5130
6230
5720
- 11
—
+ 11 %
4640
4640
4980
4980
5570
5300
- 8 + 8
4650
4600
4860
4860
5150
5090
- 4
0
0
5
5
8
9
50
+ 4
1
2
1
70
100
—
%
—
%
µA mA
V
V mA
µs
Doc ID 18043 Rev 2 11/37
Electrical specifications VN5E016AFH-E
Table 9.
Symbol
Current sense (8 V < V
CC
< 18 V) (continued)
Parameter Test conditions Min.
Typ.
Max.
Unit t t
DSENSE1L
DSENSE2H
Delay response time from rising edge of
CS_DIS pin
Delay response time from rising edge of
INPUT pin
V
SENSE
< 4 V;
1.5 A < I out
< 25 A
I
SENSE
= 10% of I
SENSE max
(see
)
V
SENSE
< 4 V;
1.5 A < I out
< 25 A
I
SENSE
= 90% of I
SENSE max
(see
)
Δ t
DSENSE2H
Delay response time between rising edge of output current and rising edge of current sense
V
SENSE
< 4 V,
I
SENSE
= 90% of I
SENSEMAX,
I
OUT
= 90% of I
OUTMAX
I
OUTMAX
t
DSENSE2L
Delay response time from falling edge of
INPUT pin
V
SENSE
< 4 V;
1.5 A < I out
< 25 A
I
SENSE
= 10% of I
SENSE max
(see
)
5
270
100
1.
Parameter guaranteed by design, it is not tested.
2.
Fault condition includes: power limitation, overtemperature and open-load OFF-state detection.
20
600
280
250
µs
µs
µs
µs
Table 10.
Open-load detection (8 V < V
CC
< 18 V)
Symbol Parameter Test conditions
V
OL
Open-load OFF-state voltage detection threshold t
DSTKON
Output short circuit to
V
CC
detection delay at turn Off
I
I
L(off2)r
L(off2)f td_vol
V
IN
= 0 V
See
Off-state output current at V
OUT
= 4 V
Off-state output current at V
OUT
= 2 V
Delay response from output rising edge to
V
SENSE rising edge in open-load
V
IN
= 0 V; V
SENSE
= 0 V;
V
OUT rising from 0V to 4 V
V
IN
= 0 V; V
SENSE
= V
SENSEH
;
V
OUT falling from V
CC
to 2 V
V
OUT
= 4 V; V
IN
= 0 V;
V
SENSE
= 90 % of V
SENSEH
Min.
2
180
-120
-50
Typ.
Max. Unit
See
4
1200 µs
0
90
20
V
µA
µA
µs
12/37 Doc ID 18043 Rev 2
VN5E016AFH-E
Figure 4.
Current sense delay characteristics
Electrical specifications
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT t
DSENSE2H t
DSENSE1L t
DSENSE1H t
DSENSE2L
Figure 5.
Open-load Off-state delay timing
OUTPUT STUCK TO V
CC
V
IN
V
OUT
> V
OL
V
SENSEH
V
CS t
DSTKON
Figure 6.
Switching characteristics
V
OUT t
Won
80% dV
OUT
/dt
(on) t r
10%
INPUT t d(on) t d(off) t
Woff
90% t f dV
OUT
/dt
(off) t t
Doc ID 18043 Rev 2 13/37
Electrical specifications VN5E016AFH-E
Figure 7.
Delay response time between rising edge of output current and rising edge of current sense (CS enabled)
V
IN
Δ t
DSENSE2H t
I
OUT
90% I
OUTMAX
I
OUTMAX t
I
SENSE I
SENSEMAX
90% I
SENSEMAX t
Figure 8.
Output voltage drop limitation
V
CC
-V
OUT
T j
= 150 °C T j
= 25 °C
T j
= -40 °C
V
ON
V
ON
/R
ON
(T)
I
OUT
14/37 Doc ID 18043 Rev 2
VN5E016AFH-E Electrical specifications
Figure 9.
I
OUT
/I
SENSE
vs I
OUT
I out
/ I sense
6400
6200
6000
5800
5600 max Tj = -40 °C to 150 °C
5400
5200 max Tj = 25 °C to 150 °C
5000
4800
4600 min Tj = 25 °C to 150 °C
4400
4200
4000
5 10 typical value min Tj = -40 °C to 150 °C
15
I
OUT
(A)
Figure 10. Maximum current sense ratio drift vs load current dk/k(%)
20
15
10
5
0
-5
-10
-15
-20
5 10 15
I
OUT
(A)
Note: Parameter guaranteed by design; it is not tested.
20
20
25
25
Doc ID 18043 Rev 2 15/37
Electrical specifications VN5E016AFH-E
Table 11.
Truth table
Conditions
Normal operation
Overtemperature
Undervoltage
Overload
Input
L
H
L
H
L
H
H
H
Output
L
L
L
H
L
L
X
(no power limitation)
Cycling
(power limitation)
L
L
Sense (V
CSD
=0V) (1)
0
Nominal
0
V
SENSEH
0
0
Nominal
V
SENSEH
Short circuit to GND
(power limitation)
Open-load OFF-state
(with external pull-up)
Short circuit to V
CC
(external pull-up disconnected)
L
H
L
L
H
H
H
H
V
V
V
0
SENSEH
SENSEH
SENSEH
< Nominal
Negative output voltage clamp
L L 0
1.
If the V
CSD
is high, the SENSE output is at a high impedance, its potential depends on leakage currents and external circuit.
16/37 Doc ID 18043 Rev 2
VN5E016AFH-E Electrical specifications
Table 12.
Electrical transient requirements (part 1)
ISO 7637-2:
2004(E)
Test pulse III
Test levels
IV
Number of pulses or test times
Burst cycle/pulse repetition time
1
2a
3a
3b
-75 V
+37 V
-100 V
+75 V
-100 V
+50 V
-150 V
+100 V
5000 pulses
5000 pulses
1h
1h
0.5 s
0.2 s
90 ms
90 ms
5 s
5 s
100 ms
100 ms
4
5b
(2)
-6 V
+65 V
-7 V
+87 V
1 pulse
1 pulse -
-
Delays and
Impedance
2 ms, 10 Ω
50 µs, 2 Ω
0.1 µs, 50 Ω
0.1µs, 50 Ω
100 ms,
0.01
Ω
400 ms, 2 Ω
Table 13.
Electrical transient requirements (part 2)
ISO 7637-2:
2004(E)
Test pulse III
Test level results
(1)
IV
1
2a
3a
3b
C
C
C
C
4
5b
(2)
C
C
1.
The above test levels must be considered referred to V
CC
= 13.5V except for pulse 5b
2.
Valid in case of external load dump clamp: 40V maximum referred to ground.
C
C
C
C
C
C
Table 14.
Electrical transient requirements (part 3)
Class Contents
C
E
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device are not performed as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device.
Doc ID 18043 Rev 2 17/37
Electrical specifications
2.4 Waveforms
Figure 11. Normal operation
Normal operation
INPUT
Nominal load Nominal load
I
OUT
V
SENSE
V
CS_DIS
Figure 12. Overload or Short to GND
Overload or Short to GND
INPUT
I
LimH
>
I
OUT
Power Limitation
I
LimL
>
Thermal cycling
V
SENSE
V
CS_DIS
VN5E016AFH-E
18/37 Doc ID 18043 Rev 2
VN5E016AFH-E
Figure 13. Intermittent overload
Overload or Short to GND
Electrical specifications
INPUT
I
LimH
>
I
OUT
Power Limitation
I
LimL
>
Thermal cycling
V
SENSE
V
CS_DIS
Figure 14. OFF-state open-load with external circuitry
OFF-State Open Load with external circutry
INPUT
V
OUT
I
OUT
V
SENSE
V
CS_DIS
V
OL
V
OUT
V
SENSEH
> t
DSTK(on)
> V
OL
Doc ID 18043 Rev 2 19/37
Electrical specifications
Figure 15. Short to V
CC
Resistive
Short to V
CC
Short to V
CC
Hard
Short to V
CC
VN5E016AFH-E
V
OUT
I
OUT
V
OL
V
OUT
> V
OL t
DSTK(on) t
DSTK(on)
V
CS_DIS
Figure 16. T
J
evolution in overload or short to GND
T
J
evolution in
Overload or Short to GND
INPUT
Self-limitation of fast thermal transients T
TSD
T
R
T
J
I
LimH
>
T
J_START
Power Limitation
T
HYST
< I
LimL
I
OUT
20/37 Doc ID 18043 Rev 2
VN5E016AFH-E Electrical specifications
Figure 17. Off-state output current
Iloff [nA]
4000
3500
3000
2500
2000
1500
1000
500
0
-50 -25 0 25 50 75
Tc [°C]
100 125 150 175
Figure 18. High level input current
3.5
3
2.5
2
1.5
Iih [uA]
5
4.5
4
1
0.5
0
-50 -25
Vin= 2.1V
0 25 50 75
Tc [°C]
100 125 150 175
Figure 19. Input clamp level
Vicl [V]
7
6.8
6.6
6.4
6.2
6
5.8
5.6
Iin= 1mA
5.4
5.2
5
-50 -25 0 25 50 75
Tc [°C]
100 125 150 175
Figure 20. Input low level
Vil [V]
2
1.8
1.6
0.8
0.6
0.4
1.4
1.2
1
0.2
0
-50 -25 0 25 50 75
Tc [°C]
100 125 150 175
Figure 21. Input high level
Vih [V]
4
3.5
3
2.5
2
1.5
1
0.5
0
-50 -25 0 25 50 75
Tc [°C]
100 125 150 175
Figure 22. Input hysteresis voltage
Vihyst [V]
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-50 -25 0 25 50 75
Tc [°C]
100 125 150 175
Doc ID 18043 Rev 2 21/37
Electrical specifications VN5E016AFH-E
Figure 23. On-state resistance vs T case
Ron [m Ohm ]
100
90
80
70
60
50
40
30
20
Iout= 5A
Vcc= 13V
10
0
-50 -25 0 25 50 75
Tc [°C]
100 125 150 175
Figure 24. On-state resistance vs V
CC
Ron [mOhm]
40
30
20
10
0
0 5 10 15 20
Vcc [V]
25
Tc= 150°C
Tc= 125°C
Tc= 25°C
Tc= -40°C
30 35 40
Figure 25. Undervoltage shutdown
Vusd [V]
16
14
8
6
4
12
10
2
0
-50 -25 0 25 50 75
Tc [°C]
100 125 150 175
Figure 26. Turn-on voltage slope
(dVout/dt)On [V/ms]
1000
900
800
700
600
500
400
300
200
100
0
-50 -25 0 25 50 75
Tc [°C]
Vcc= 13V
Rl= 2.6
Ω
100 125 150 175
Figure 27. I
Ilimh [A]
100
90
80
70
60
50
40
-50 -25
LIMH
vs T
Vcc= 13V
0 25 case
50 75
Tc [°C]
100 125 150 175
Figure 28. Turn-off voltage slope
(dVout/dt)Off [V/ms]
1000
900
800
700
600
500
400
300
200
100
0
-50 -25 0 25 50 75
Tc [°C]
Vcc= 13V
Rl= 2.6
Ω
100 125 150 175
22/37 Doc ID 18043 Rev 2
VN5E016AFH-E Electrical specifications
Figure 29. CS_DIS high level voltage
Vcsdh [V]
4
3.5
3
2.5
2
1.5
1
0.5
0
-50 -25 0 25 50 75
Tc [°C]
100 125 150 175
Figure 30. CS_DIS clamp voltage
Vcsdcl [V]
10
6
5
4
3
9
8
7
2
1
0
-50 -25 0 25
Iin= 1mA
50 75
Tc [°C]
100 125 150 175
Figure 31. CS_DIS low level voltage
Vcsdl [V]
4
3.5
3
2.5
2
1.5
1
0.5
0
-50 -25 0 25 50 75
Tc [°C]
100 125 150 175
Doc ID 18043 Rev 2 23/37
Application information VN5E016AFH-E
Figure 32. Application schematic
+5V
μ
C
V
CC
R prot
CS_DIS
C ext
R prot
R prot
IINPUT
R
CURRENT SENSE
SENSE
GND
V
GND
R
GND
D
GND
OUTPUT
D ld
3.1
24/37
GND protection network against reverse battery
resistor in the ground line (R
GND
only)
This can be used with any type of load.
The following is an indication on how to dimension the R
GND resistor.
1.
R
GND
≤
600mV / (I
S(on)max
).
2. R
GND
≥ (− V
CC
) / (-I
GND
) where -I
GND
is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device datasheet.
Power dissipation in R
GND
(when V
CC
<0: during reverse battery situations) is:
Equation 1
P
D
= (-V
CC
)
2
/R
GND
This resistor can be shared amongst several different HSDs. Please note that the value of this resistor should be calculated with formula (1) where I
S(on)max
becomes the sum of the maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
GND produces a shift (I
S(on)max
* R
GND
) in the input thresholds and the status output
Doc ID 18043 Rev 2
VN5E016AFH-E
3.1.2
Application information values. This shift varies depending on how many devices are ON in the case of several high side drivers sharing the same R
GND
.
If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then ST suggests to utilize Solution 2 (see below).
Solution 2: a diode (D
GND
) in the ground line
A resistor (R
GND
=1k
Ω) should be inserted in parallel to D
GND
if the device drives an inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this case, the presence of the ground network produces a shift (
≈
600mV) in the input threshold and in the status output values if the microprocessor ground is not common to the device ground. This shift not varies if more than one HSD shares the same diode/resistor network.
3.3
D ld
is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the
V
CC
max DC rating. The same applies if the device is subject to transients on the V
CC
line that are greater than the ones shown in the ISO T/R 7637/1 table.
MCU I/Os protection
If a ground protection network is used and negative transients are present on the V
CC
line, the control pins are pulled negative. ST suggests to insert a resistor (R prot the
μ
C I/Os pins to latch-up.
) in line to prevent
The value of these resistors is a compromise between the leakage current of µ C and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of µ C
I/Os.
Equation 2
V
CCpeak
/I latchup
≤
R prot
≤
(V
OH
μ
C
-V
IH
-V
GND
) / I
IHmax
Calculation example:
For V
CCpeak
= -100V; I latchup
≥
20mA; V
OH
μ
C
≥
4.5V
5k Ω ≤ R prot
≤ 65k Ω .
Recommended values: R prot
= 10k Ω, C
EXT
= 10nF .
Doc ID 18043 Rev 2 25/37
Application information
3.4 Current sense and diagnostic
VN5E016AFH-E
The current sense pin performs a double function (see
Figure 33: Current sense and diagnostic
):
●
●
Current mirror of the load current in normal operation, delivering a current proportional to the load one according to a known ration K
X
.
The current I
SENSE
can be easily converted to a voltage V
SENSE
by means of an external resistor R
SENSE
. Linearity between I
OUT
and V
SENSE
is ensured up to 5V minimum (see parameter V
SENSE
in Table 9: Current sense (8 V < V
current sense accuracy depends on the output current (refer to current sense electrical characteristics
Table 9: Current sense (8 V < V
).
Diagnostic flag in fault conditions , delivering a fixed voltage V
SENSEH
up to a maximum current I
SENSEH
in case of the following fault conditions (refer to Truth table
):
– Power limitation activation
– Overtemperature
– Short to V
CC
in OFF-state
– Open-load in OFF-state with additional external components.
A logic level high on CS_DIS pin sets at the same time all the current sense pins of the device in a high impedance state, thus disabling the current monitoring and diagnostic detection. This feature allows multiplexing of the microcontroller analog inputs by sharing of sense resistance and ADC line among different devices.
Figure 33. Current sense and diagnostic
V
BAT
V
PU
I
OUT
/K
X
CS_DIS
41V
I
SENSEH
R
PROT
To uC ADC
R
SENSE
CURRENT
SENSEn
V
SENSEH
V
SENSE
V
CC
Main MOSn
PU_CMD
Overtemperature
OL OFF
Pwr_Lim
INPUTn
+
-
R
PU
V
OL
OUTn
I
Loff2r
I
Loff2f
GND
R
PD
Load
26/37 Doc ID 18043 Rev 2
VN5E016AFH-E Application information
3.4.1 Short
CC
and OFF-state open-load detection
Short to V
CC
A short circuit between V
CC and output is indicated by the relevant current sense pin set to
V
SENSEH
during the device off-state. Small or no current is delivered by the current sense during the on-state depending on the nature of the short circuit.
OFF-state open-load with external circuitry
Detection of an open-load in off mode requires an external pull-up resistor R
PU
connecting the output to a positive supply voltage V
PU
.
It is preferable V
PU
to be switched off during the module standby mode in order to avoid the overall standby current consumption to increase in normal conditions, i.e. when load is connected.
An external pull down resistor R
PD
connected between output and GND is mandatory to
).
R
PD
must be selected in order to ensure V
OUT
< circuitry:
V
OLmin
unless pulled up by the external
Equation 3
V
OUT
Pull − up _ OFF
=
R
PD
⋅
I
L ( off 2 ) f
<
V
OL min
=
2 V
R
PD
≤ 22 K Ω is recommended.
For proper open-load detection in off-state, the external pull-up resistor must be selected according to the following formula:
Equation 4
V
OUT
Pull − up _ ON
=
R
PD
⋅
V
PU
−
R
R
PU
PU
+
⋅
R
PD
R
PD
⋅
I
L ( off 2 ) r
>
V
OL max
=
4 V
For the values of V
OLmin
,V
OLmax
,
I
L(off2)r and I
L(off2)f see
Doc ID 18043 Rev 2 27/37
Application information
3.5 Maximum demagnetization energy (V
CC
Figure 34. Maximum turn off current versus inductance
= 13.5V)
VN5E016AFH-E
100
B
A
C
10
1
0,1 1 L (mH) 10 100
A: T jstart
= 150°C single pulse
B: T jstart
= 100°C repetitive pulse
C: T jstart
= 125°C repetitive pulse
V
IN
, I
L
Demagnetization Demagnetization Demagnetization
28/37
Note:
Values are generated with R
L
= 0
In case of repetitive pulses, T jstart
Ω.
(at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves A and B.
t
Doc ID 18043 Rev 2
VN5E016AFH-E
4
Package and PC board thermal data
Package and PC board thermal data
4.1 HPak thermal data
Figure 35. PC board
Note:
Layout condition of R th
and Z th
measurements (PCB FR4 area = 58 mm x 58 mm, PCB thickness = 1.8 mm, Cu thickness = 70 µm, Copper areas: from minimum pad lay-out to 8 cm
2
).
Figure 36. R thj-amb
vs PCB copper area in open box free air condition
RTHjamb
75
70
65
60
55
50
45
40
35
30
0 2 4 6
RTHjamb
8 10
Doc ID 18043 Rev 2 29/37
Package and PC board thermal data
Figure 37. HPak thermal impedance junction ambient single pulse
VN5E016AFH-E
Equation 5: pulse calculation formula
Z
TH
δ
= R
TH
⋅ δ + Z
THtp
( 1 – δ ) where
δ
= t
P
/T
Figure 38. Thermal fitting model of a single channel HSD in HPak
30/37
Note:
The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded protections (power limitation or thermal cycling during thermal shutdown) are not triggered.
Doc ID 18043 Rev 2
VN5E016AFH-E
Table 15.
Thermal parameter
Area/island (cm
2
)
R1 (°C/W)
R2 (°C/W)
R3 (°C/W)
R4 (°C/W)
R5 (°C/W)
R6 (°C/W)
C1 (W.s/°C)
C2 (W.s/°C)
C3 (W.s/°C)
C4 (W.s/°C)
C5 (W.s/°C)
C6 (W.s/°C)
Footprint
0.0001
0.002
0.05
0.4
0.8
3
0.1
0.2
2
8
28
31
Package and PC board thermal data
4
-
-
1.4
6
-
-
-
-
-
-
22
25
8
-
-
3
9
-
-
-
-
-
-
12
16
Doc ID 18043 Rev 2 31/37
Package and packing information
5 Package and packing information
VN5E016AFH-E
5.1 ECOPACK
®
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
5.2 HPak mechanical data
Figure 39. HPak package dimension
32/37 Doc ID 18043 Rev 2
VN5E016AFH-E
D1
E
E1 e e1 e2 b4 c c2
D
A
A1
A2 b e3
H
L
(L1)
L2
L4
R
V2
Table 16.
Hpak mechanical data
Ref. dim
Nom.
5.10
-
5.20
0.85
-
-
-
-
-
-
-
-
-
-
2.80
0.80
-
0.20
-
-
-
-
Package and packing information
Data book mm
Min.
-
6.40
-
-
1.60
3.30
5.20
0.45
0.48
6.00
2.20
0.90
0.03
0.45
5.00
9.35
1
-
-
0.60
-
0°
Max.
-
6.60
-
-
1.80
3.50
5.40
0.60
0.60
6.20
2.40
1.10
0.23
0.60
5.20
10.10
-
-
-
1.00
-
8°
Doc ID 18043 Rev 2 33/37
Package and packing information VN5E016AFH-E
The devices can be packed in tube or tape and reel shipments (see
).
Figure 40. HPAK tube shipment (no suffix)
A
B
C
Base q.ty
Bulk q.ty
Tube length (± 0.5)
A
B
C (± 0.1)
All dimensions are in mm.
75
3000
532
6
21.3
0.6
34/37
Figure 41. HPAK tape and reel (suffix “TR”)
REEL DIMENSIONS
All dimensions are in mm.
Base q.ty
Bulk q.ty
A (max)
B (min)
C (± 0.2)
F
G (+ 2 / -0)
N (min)
T (max)
2500
2500
330
1.5
13
20.2
16.4
60
22.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width
Tape hole spacing
Component spacing
Hole diameter
Hole diameter
Hole position
Compartment depth
Hole spacing
W
P0 (± 0.1)
16
4
P 8
D (+ 0.1/-0) 1.5
D1 (min)
F (± 0.05)
K (max)
P1 (± 0.1)
1.5
7.5
2.75
2
All dimensions are in mm.
End
Top cover tape
No components
500mm min
Components No components
Empty components pockets saled with cover tape.
500mm min
User direction of feed
Start
Doc ID 18043 Rev 2
VN5E016AFH-E Order codes
Table 17.
Device summary
Package
7 pins H-pack
Tube
VN5E016AFH-E
Order codes
Tape and reel
VN5E016AFHTR-E
Doc ID 18043 Rev 2 35/37
Revision history
Table 18.
Document revision history
Date Revision
02-Nov-2010
18-Sep-2013
1
2
Initial release.
Updated Disclaimer
Changes
VN5E016AFH-E
36/37 Doc ID 18043 Rev 2
VN5E016AFH-E
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DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.
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Information in this document supersedes and replaces all information previously supplied.
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Doc ID 18043 Rev 2 37/37
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