STMicroelectronics VNQ5E080TD1-E Datasheet
광고
광고
VNQ5E080TD1-E
Quad channel high-side driver with analog current sense
for automotive applications
Datasheet
−
production data
Max supply voltage
Operating voltage range
V
CC
V
CC
41 V
4.5 to 28 V
Max on-state resistance (per ch.) R
ON
Current limitation (typ)
Off-state supply current
I
LIMH
I
S
80 m Ω
7.5 A at 25 °C
2 µA
(1)
1.
Typical value with all loads connected
Features
■
■
■
General
– Inrush current active management by power limitation
– Very low standby current
– 3.0 V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– Compliance with European directive
2002/95/EC
– Very low current sense leakage
Diagnostic functions
– Proportional load current sense
– High current sense precision for wide currents range
– Current sense disable
– Overload and short to ground (power limitation) indication
– Thermal shutdown indication
Protections
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss of V
CC
– Overtemperature shutdown with auto restart (thermal shutdown)
– Reverse battery protected
Description
The VNQ5E080TD1-E is a quad channel high-side driver manufactured using ST proprietary VIPower
®
M0-5 technology. The
VNQ5E080TD1-E is designed to drive 12 V automotive grounded loads, and to provide protection and diagnostics. It also implements a
3 V and 5 V CMOS-compatible interface for use with any microcontroller.
The device integrates advanced protective functions such as load current limitation, inrush and overload active management by power limitation, overtemperature shut-off with autorestart and overvoltage active clamp.
A dedicated analog current sense pin is associated with every output channel providing enhanced diagnostic functions including fast detection of overload and short-circuit to ground through power limitation indication and overtemperature indication.
The current sensing and diagnostic feedback of the whole device can be disabled by pulling the
CS_DIS pin high to share the external sense resistor with similar devices.
Table 1.
Device summary
DIE delivery package Order code
D1 VNQ5E080TD1-E
June 2012
This is information on a product in full production.
Doc ID 018950 Rev. 5 1/23 www.st.com
1
Contents
Contents
VNQ5E080TD1-E
Block diagram and physical characteristics . . . . . . . . . . . . . . . . . . . . . 5
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 17
Solution 1: resistor in the ground line (RGND only) . . . . . . . . . . . . . . . . 17
Solution 2: diode (DGND) in the ground line . . . . . . . . . . . . . . . . . . . . . 18
Current sense and diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Obsolete Product(s) - Obsolete Product(s)
2/23 Doc ID 018950 Rev. 5
VNQ5E080TD1-E
List of tables
List of tables
CC
= 13 V; T j
= 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
< 18 V; -40°C < T j
< 185°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Obsolete Product(s) - Obsolete Product(s)
Doc ID 018950 Rev. 5 3/23
List of figures
List of figures
VNQ5E080TD1-E
evolution in overload or short to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Obsolete Product(s) - Obsolete Product(s)
4/23 Doc ID 018950 Rev. 5
VNQ5E080TD1-E
1
Block diagram and physical characteristics
Block diagram and physical characteristics
Figure 1.
Block diagram
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Figure 2.
Pad configuration
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Doc ID 018950 Rev. 5 5/23
Block diagram and physical characteristics VNQ5E080TD1-E
Table 2.
Pad location (axes origin: center of DIE)
Center pad coordinates
Pad description
X (µm) Y (µm)
Pad dimensions
X (µm) Y (µm)
Input 1
Input 2
Input 3
Input 4
Output 1 (1)
Output 1 (2)
Output 1 (3)
Output 1 (4)
Output 2 (1)
Output 2 (2)
Output 2 (3)
Output 2 (4)
Output 3 (1)
Output 3 (2)
Output 3 (3)
Output 3 (4)
Output 4 (1)
Output 4 (2)
Output 4 (3)
Output 4 (4)
Current sense 1
Current sense 2
Current sense 3
398.5
142.5;
2039.3
1783.3
1514.5
1258.5
-192.7
-448.7
-717.5
-973.5
923.3
667.3
-801.2
54.0
909.2
-1094.9
-239.7
615.5
1470.7
-1308.7
-1564.7
-1833.5
-2089.5
563.5
563.5
563.5
563.5
563.5
563.5
563.5
563.5
563.5
563.5
563.5
563.5
-1204.1
-1204.1
-1204.1
-1292.6
-1292.6
-1292.6
-1292.6
563.5
563.5
563.5
563.5
165
165
165
165
165
165
165
165
165
165
165
165
90
90
90
90
165
165
165
165
90
90
90
165
165
165
165
165
165
165
165
165
165
165
165
90
90
90
90
165
165
165
165
90
90
90
Current sense 4
CS_DIS
1764.4
1992.0
-1204.1
-1242.5
90
90
90
90
P_Gate 1
P_Gate 2
-1449.1
-333.1
1273.2
1273.2
90
90
90
90
P_Gate 3 782.9
1273.2
90 90
P_Gate 4 1898.9
1273.2
90 90
Ground -1870.6
-1043.1
90 90
6/23 Doc ID 018950 Rev. 5
VNQ5E080TD1-E Block diagram and physical characteristics
Table 3.
Physical characteristics
Parameter
Die size
X dimension
Y dimension
Die finish front
Die finish back
Die thickness
Scribe street width
Front metallization
Description
Silicon nitride / polyamide
Ti/Ni/Au
Al/Si
Value
13.11
4.57
2.87
—
—
280 +/- 20
100
3
Unit mm
2 mm mm
-
-
µm
µm
µm
Table 4.
Suggested connections for unused and N.C. pins
Connection / pin Current sense N.C.
Output Input
Floating
To ground
N.R.
(1)
Through 1 K
Ω resistor
X
X
X
N.R.
(1)
X
Through 10 K
Ω resistor
1.
Not recommended.
CS_DIS
X
Through 10 K
Ω resistor
Obsolete Product(s) - Obsolete Product(s)
Doc ID 018950 Rev. 5 7/23
Electrical specifications VNQ5E080TD1-E
Stressing the device above the rating listed in
Table 5 may cause permanent damage to the
device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute maximum rating conditions for extended periods may affect device reliability.
Table 5.
Symbol
V
CC
-V
CC
-I
GND
I
OUT
-I
OUT
I
IN
I
CSD
Absolute maximum ratings
Parameter
DC supply voltage
Reverse DC supply voltage
DC reverse ground pin current
DC output current
Reverse DC output current
DC input current
DC current sense disable input current
Value
41
+0.3
+200
Internally limited
10
-1 to 10
-1 to 10
V
CC
- 41
+V
CC
V
CSENSE
Current sense maximum voltage
V
T
ESD
T j stg
Electrostatic discharge (Human Body Model: R = 1.5K
Ω;
C = 100pF)
– INPUT, CS_DIS
– CURRENT SENSE
– OUTPUT
– V
CC
Junction operating temperature
Storage temperature
4000
2000
5000
5000
-40 to 185
-55 to 150
°C
°C
V
V
V
V
Unit
V
V mA
A
A mA mA
V
V
Values specified in this section are for 8 V < V
CC
< 28 V; -40°C < T < 185°C, unless otherwise stated.
j
Obsolete Product(s) - Obsolete Product(s)
Power section Table 6.
Symbol Parameter Test conditions Min.
Typ. Max.
Unit
V
CC
Operating supply voltage
V
USD
Undervoltage shutdown
V
USDhyst
Undervoltage shutdown hysteresis
4.5
13 28
2.4
3.5
4.5
0.5
V
V
V
8/23 Doc ID 018950 Rev. 5
VNQ5E080TD1-E Electrical specifications
Table 6.
Symbol
R
ON
I
S
I
L(off)
Power section (continued)
Parameter
On state resistance
(1)
V clamp
Clamp voltage
Supply current
Off-state output current
(1)
Test conditions
I
OUT
= 1.5 A; T j
= 25°C
I
OUT
= 1.5 A; T j
= 150°C
I
OUT
= 1.5 A; T j
= 185°C
I
OUT
= 1.5 A; V
CC
= 5 V; T j
= 25°C
I
S
= 20 mA
Off-state; V
V
IN
= V
OUT
CC
= 13 V; T j
= V
SENSE
= V
= 25°C;
CSD
= 0 V
On-state; V
CC
I
OUT
= 0 A
= 13 V; V
IN
= 5 V;
V
IN
T j
= V
OUT
= 25°C
= 0 V; V
CC
= 13 V;
V
IN
T j
= V
OUT
= 125°C
= 0 V; V
CC
= 13 V;
Min.
Typ. Max.
Unit
41
67 80 m
Ω
134 160 m Ω
157 190 m Ω
69 110 m Ω
46 52 V
0
0
2
(2)
5
5
(2)
10
3
5
µA mA
µA
µA
1.
For each channel
2.
PowerMOS leakage included
Table 7.
Symbol
Switching (V
CC
= 13 V; T j
= 25°C)
Parameter Test conditions Min.
Typ. Max.
Unit t d(on) t d(off)
(dV
OUT
/dt) on
(dV
OUT
/dt) off
W
ON
W
OFF
Turn-on delay time
Turn off delay time
Turn-on voltage slope
Turn-off voltage slope
R
L
= 8.6
Ω
R
L
= 8.6
Ω
—
—
25
20
—
—
R
L
= 8.6
Ω — 0.5
—
R
L
= 8.6
Ω
— 0.4
—
Switching energy losses at turn-on R
L
= 8.6
Ω — 0.11
—
Switching energy losses at turn-off R
L
= 8.6
Ω
— 0.11
—
µs mJ
µs
V / µs
V
/
µs mJ
Table 8.
Symbol
Logic input
Parameter Test conditions Min.
Typ.
Max.
Unit
V
ICL
Input low level voltage
Input clamp voltage
-0.7
0.9
V
IL
I
IL
V
IH
V
IN
Low level input current
Input high level voltage
= 0.9 V 1
2.1
µA
V
I
IH
High level input current V
IN
= 2.1 V 10 µA
V
I(hyst)
Input hysteresis voltage 0.25
V
I
IN
= 1 mA
I
IN
= -1 mA
5.5
7 V
V
V
V
CSDL
I
CSDL
CS_DIS low level voltage 0.9
V
Low level CS_DIS current V
CSD
= 0.9 V 1 µA
Doc ID 018950 Rev. 5 9/23
Electrical specifications VNQ5E080TD1-E
Table 8.
Symbol
Logic input (continued)
Parameter Test conditions
V
CSDH
I
CSDH
V
CSD(hyst)
V
CSCL
CS_DIS high level voltage
High level CS_DIS current V
CSD
= 2.1 V
CS_DIS hysteresis voltage
CS_DIS clamp voltage
I
CSD
= 1 mA
I
CSD
= -1 mA
Min.
Typ.
Max.
Unit
2.1
0.25
5.5
-0.7
10
7
V
µA
V
V
V
Table 9.
Symbol
Protection and diagnostics
(1)
Parameter Test conditions Min.
Typ.
Max.
Unit
I limH
DC short circuit current 4.5 V < V
CC
< 28 V 5 7 10 A
I limL
Short circuit current during thermal cycling
T
TSD
T
R
Shutdown temperature
Reset temperature
T
RS
Thermal reset of STATUS
T
HYST
Thermal hysteresis
(T
TSD
- T
R
)
V
DEMAG
Turn-off output voltage clamp
V
CC
= 13 V; T
R
< T j
< T
TSD
I
OUT
= 150 mA; V
IN
= 0
T
185
RS
+ 1 T
170
210
RS
2
7
+ 5
235
A
°C
°C
°C
°C
V
CC
- 41 V
CC
- 46 V
CC
- 52 V
V
ON
Output voltage drop limitation
I
OUT
= 0.05 A
25
1.
To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration and number of activation cycles.
mV
Table 10.
Current sense (8 V < V
CC
< 18 V; -40°C < T j
< 185°C)
Symbol Parameter Test conditions Min.
Typ. Max. Unit
K
1 dK/K
1
(1)
K dK/K
2
(1)
K
2
3 dK/K
3
(1)
I
I
OUT
/I
SENSE
I
OUT
V
CSD
= 0.2 A; V
SENSE
= 0 V; -40°C < T
= 0.5 V; j
< 185°C
Current sense ratio drift
I
OUT
V
CSD
= 0.2 A; V
SENSE
= 0 V; -40°C < T
= 0.5 V; j
< 185°C
OUT
/I
SENSE
I
OUT
V
CSD
= 1.5 A; V
SENSE
I
Current sense ratio drift
I
OUT
V
CSD
= 1.5 A; V
SENSE
= 0 V; -40°C < T
= 4 V; j
< 185°C
OUT
/I
SENSE
I
OUT
V
CSD
= 4.5 A; V
SENSE
= 0 V
= 4V;
Current sense ratio drift
I
OUT
V
CSD
= 4.5 A; V
SENSE
= 0 V; -40°C < T
= 4 V; j
< 185°C
1040 1746 2400
-15
-10
15
10
1450 1547 1680
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%
%
%
10/23 Doc ID 018950 Rev. 5
VNQ5E080TD1-E Electrical specifications
Table 10.
Current sense (8 V < V
CC
< 18 V; -40°C < T j
< 185°C) (continued)
Symbol Parameter Test conditions Min.
Typ. Max. Unit
I
SENSE0
V
SENSE
V
SENSEH
Analog sense leakage current
Max analog sense output voltage
Analog sense output voltage in overtemperature condition
V
V
SENSE
IN
= 0 V; V
CSD
= 5 V; I
OUT
= 5 V;
= 1.5 A;
-40°C < T j
< 150°C
V
SENSE
V
IN
= 0 V; V
= 5 V; I
OUT
CSD
= 5 V;
= 1.5 A; T j
= 185°C
V
SENSE
= 0 V; V
CSD
= 0 V;
V
IN
= 5 V; I
OUT
-40°C < T j
= 0 A;
< 150°C
V
SENSE
V
IN
= 0 V; V
= 5 V; I
OUT
CSD
= 0 V;
= 0 A; T j
= 185°C
V
V
SENSE
IN
= 0 V; V
CSD
= 0 V; I
OUT
= 5 V;
= 0 A;
-40°C < T j
< 150°C
V
SENSE
V
IN
= 0 V; V
= 0 V; I
OUT
CSD
= 5 V;
= 0 A; T j
= 185°C
I
OUT
R
= 1.5 A; V
CSD
SENSE
= 10 k
Ω
= 0 V;
V
CC
= 13 V; R
SENSE
= 3.9 k Ω
I
SENSEH
Analog sense output current in overtemperature condition t
DSENSE1H
Delay response time from falling edge of
CS_DIS pin t
DSENSE1L
Delay response time from rising edge of
CS_DIS pin t
DSENSE2H
Delay response time from rising edge of
INPUT pin
I
V
V
CC
= 13 V; V
SENSE
SENSE
SENSE
< 4 V; 0.2 < I
= 90 % of I
= 5 V
OUT
SENSE
< 4.5 A; max
V
SENSE
I
SENSE
< 4 V; 0.2 < I
OUT
< 4.5 A;
= 10 % of I
SENSE max
V
SENSE
I
SENSE
< 4 V; 0.2 < I
= 90 % of I
OUT
SENSE
< 4.5 A; max
0
0
0
5 10
9
8
40 100 µs
5
1
10
2
10
1
10
12
10
12 mA
20 t
DSENSE2L
Delay response time from falling edge of
V
SENSE
I
SENSE
< 4 V; 0.2 < I
OUT
= 10 % of I
SENSE max
< 4.5 A;
40 250 µs
Obsolete Product(s) - Obsolete Product(s)
1.
Guaranteed by design/characterization on final product.
µA
µA
µA
µA
µA
µA
V
V
µs
50 300 µs
Doc ID 018950 Rev. 5 11/23
Electrical specifications
Figure 3.
Current sense delay characteristics
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Switching characteristics
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Output voltage drop limitation
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12/23 Doc ID 018950 Rev. 5
VNQ5E080TD1-E Electrical specifications
Figure 6.
Delay response time between rising edge of output current and rising edge of current sense (CS enabled)
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Table 11.
Truth table
Conditions
Normal operation
Overtemperature
Undervoltage
L
H
L
H
L
L
L
L
0
V
SENSEH
0
0
Obsolete Product(s) - Obsolete Product(s)
Overload
H
H
X
(no power limitation)
Cycling
Nominal
V
SENSEH
(power limitation)
Short circuit to GND
(power limitation)
Negative output voltage clamp
Input
L
H
L
H
L
Output
L
H
L
L
L
Sense (V
CSD
= 0 V)
(1)
0
Nominal
0
V
SENSEH
0
1.
If the V
CSD
is high, the SENSE output is at a high impedance, its potential depends on leakage currents and external circuit.
Doc ID 018950 Rev. 5 13/23
Electrical specifications VNQ5E080TD1-E
Table 12.
Electrical transient requirements (part 1/3)
ISO 7637-2:
2004(E)
Test pulse
III
Test levels
(1)
IV
Number of pulses or test times
Burst cycle/pulse repetition time
Min.
Max.
1
2a
3a
3b
4
5b
(2)
-75V
+37V
-100V
+75V
-6V
+65V
-100V
+50V
-150V
+100V
-7V
+87V
5000 pulses
5000 pulses
1h
1h
1 pulse
1 pulse
0.5s
0.2s
90ms
90ms
5s
5s
100ms
100ms
1.
The above test levels must be considered referred to V
CC
= 13.5 V except for pulse 5b.
2.
Valid in case of external load dump clamp: 40 V maximum referred to ground.
Delays and impedance
2 ms, 10 Ω
50µs, 2 Ω
0.1µs, 50
Ω
0.1µs, 50 Ω
100ms, 0.01
Ω
400ms, 2 Ω
Table 13.
Electrical transient requirements (part 2/3)
Test level results ISO 7637-2:
2004E
Test pulse III
1
2a
3a
3b
4
5b
(1)
C
C
C
C
C
C
1.
Valid in case of external load dump clamp: 40V maximum referred to ground.
VI
C
C
C
C
C
C
Table 14.
Electrical transient requirements (part 3/3)
Class Contents
C
E
All functions of the device performed as designed after exposure to disturbance.
One or more functions of the device did not perform as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device.
Obsolete Product(s) - Obsolete Product(s)
14/23 Doc ID 018950 Rev. 5
VNQ5E080TD1-E
2.3 Waveforms
Figure 7.
Normal operation
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Electrical specifications
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Overload or short to GND
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Doc ID 018950 Rev. 5 15/23
Electrical specifications
Figure 9.
Intermittent overload
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Figure 10.
T j
evolution in overload or short to GND
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16/23 Doc ID 018950 Rev. 5
VNQ5E080TD1-E Application information
Figure 11.
Application schematic
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PROT
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Note: Channel 2, 3, 4 have the same internal circuit as channel 1.
3.1 GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against reverse battery.
3.1.1 Solution 1: resistor in the ground line (R
GND
only)
This can be used with any type of load.
The following is an indication on how to size the R
GND resistor.
1.
R
GND
≤
600 mV / (I
S(on)max
).
2. R
GND
≥ (− V
CC
) / (-I
GND
) where -I
GND
is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device datasheet.
Obsolete Product(s) - Obsolete Product(s)
P
D
= (-V
CC
)
2
/R
GND
(when V
CC
This resistor can be shared amongst several different HSDs. Please note that the value of this resistor should be calculated with formula (1) where I
S(on)max
becomes the sum of the maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
GND produces a shift (I
S(on)max
* R
GND
) in the input thresholds and the status output values. This shift varies depending on how many devices are ON in case of several high side drivers sharing the same R
GND
.
Doc ID 018950 Rev. 5 17/23
Application information
3.1.2
VNQ5E080TD1-E
If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then ST suggests to utilize Solution 2 (see below).
Solution 2: diode (D
GND
) in the ground line
A resistor (R
GND inductive load.
= 1 k
Ω) should be inserted in parallel to D
GND
if the device drives an
This small signal diode can be safely shared amongst several different HSDs. Also in this case, the presence of the ground network produces a shift (
≈
600 mV) in the input threshold and in the status output values if the microprocessor ground is not common to the device ground. This shift does not vary if more than one HSD shares the same diode/resistor network.
3.2 Load dump protection
D ld
is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
V
CC
max DC rating. The same applies if the device is subject to transients on the V
CC
line that are greater than the ones shown in the ISO 7637-2: 2004(E) table.
3.3 MCU I/Os protection
If a ground protection network is used and negative transients are present on the V
CC
line, the control pins are pulled negative. ST suggests to insert a resistor (R prot
) in line to prevent the MCU I/O pins from latching-up.
The value of these resistors is a compromise between the leakage current of MCU and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of MCU
I/Os.
-V
CCpeak
/I latchup
≤
R prot
≤
(V
OH
μ
C
- V
IH
- V
GND
) / I
IHmax
Calculation example:
For V
CCpeak
= -100 V and I latchup
≥
20 mA; V
OH
μ
C
≥
4.5 V
5 k
Ω ≤
R prot
≤
180 k
Ω
.
Recommended values: R prot
=10 k
Ω,
C
EXT
=10 nF .
Obsolete Product(s) - Obsolete Product(s)
18/23 Doc ID 018950 Rev. 5
VNQ5E080TD1-E
3.4
Application information
Current sense and diagnostic
The current sense pin performs a double function (see
Figure 12: Current sense and diagnostic
):
● Current mirror of the load current in normal operation, delivering a current proportional to the load one according to a known ratio K
X
.
The current I
SENSE
can be easily converted to a voltage V
SENSE
by means of an external resistor R
SENSE
. Linearity between I minimum (see parameter V
SENSE
in
OUT
and V
SENSE
is ensured up to 5 V
Table 10: Current sense (8 V < V
< 185°C) ). The current sense accuracy depends on the output current (refer
to current sense electrical characteristics
Table 10: Current sense (8 V < V
● Diagnostic flag in fault conditions , delivering a fixed voltage V
SENSEH
up to a maximum current I
SENSEH
in case of the following fault conditions (refer to
):
– Power limitation activation
– Overtemperature
A logic level high on CS_DIS pin sets at the same time all the current sense pins of the device in a high impedance state, thus disabling the current monitoring and diagnostic detection. This feature allows multiplexing of the microcontroller analog inputs by sharing of sense resistance and ADC line among different devices.
Figure 12.
Current sense and diagnostic
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Doc ID 018950 Rev. 5
("1($'5
19/23
Package information VNQ5E080TD1-E
4.1 ECOPACK
®
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
Obsolete Product(s) - Obsolete Product(s)
20/23 Doc ID 018950 Rev. 5
VNQ5E080TD1-E
5 DIE package options
DIE package options
Table 15.
DIE delivery package options
Package option
Description Details
D1
D2
D4
D7
Wafer tested, inked, uncut; see
Figure 13: DIE delivery package options
(fig. 1)
Saw pickup and place subcontract required;
Wafer is between a double plastic shell, inside a plastic envelope sealed under vacuum;
Minimum number of wafers per box is approximately 5, weight is 1.5 kg.
Good dice in cavity plate
(waffle pack)
(1)
; see
Figure 13: DIE delivery package options
(fig. 2)
Suitable for automatic pickup and place machine for waffle pack equipment or manual operations;
Individual good dice are inside waffle pack, in a plastic envelope sealed under vacuum;
Number of dice per tray depends on die size, can be from
20 to 100 pieces, pile can be 5 or 10 trays;
Number of piles per box depends on Minimum Order
Quantity;
Weight of box is approximately 1.5 kg.
Wafer tested, inked, cut on sticky foil (carton ring); see
Figure 13: DIE delivery package options
(fig. 3)
Suitable for manual pickup and place, (no equipment required);
Wafer is held by a carton ring protected by two carton shells, inside a plastic envelope sealed under vacuum;
Minimum number of wafers per box is approximately 5, weight is 1.5 kg.
Wafer tested, inked, cut on sticky foil on 7.5" plastic ring; see
Figure 13: DIE delivery package options
(fig. 3)
Suitable for automatic pickup and place machine for sticky foil. Wafer is held by a plastic ring protected by two carton shells, inside a plastic envelope sealed under vacuum.
Minimum number of wafers per box is approximately 5, weight is 2 kg.
1.
Not preferred for new design
Figure 13.
DIE delivery package options
Obsolete Product(s) - Obsolete Product(s)
Doc ID 018950 Rev. 5 21/23
Revision history VNQ5E080TD1-E
Table 16.
Document revision history
Date Revision
16-Jun-2011
14-Oct-2011
23-Feb-2012
22-May-2012
04-Jun-2012
1
2
3
4
5
Changes
Initial release.
Updated following tables:
–
I
S
: updated typ and max values
–
–
Table 10: Current sense (8 V < V
Added
Chapter 4: Package information
Delete Target Specification.
Delete section 2.2 Thermal data
Update value on Table 10 (K1, K2 and K3)
Table 3: Physical characteristics
:
– X, Y dimensions: added rows
:
– V
USD
: added min value
– R
ON
: updaetd test condition
:
– I limH
: updated test condition
Table 10: Current sense (8 V < V
– V
SENSEH
: Added max value
Table 9: Protection and diagnostics :
– I limH
: updated test condition and values
Table 10: Current sense (8 V < V
– V
SENSE
, I
SENSEH
: updated values
Obsolete Product(s) - Obsolete Product(s)
22/23 Doc ID 018950 Rev. 5
VNQ5E080TD1-E
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