Electrical characteristics
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Symbol Parameter
Table 5: On /off states
Test conditions
V
(BR)DSS
Drain-source breakdown voltage
I
D
= 1 mA, V
GS
= 0 V
I
DSS
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 650 V
V
GS
= 0 V, V
DS
= 650 V,
T
C
=125 °C (1)
I
GSS
Gate-body leakage current
V
GS(th)
Gate threshold voltage
R
DS(on)
Static drain-source on- resistance
V
DS
= 0 V, V
GS
= ±25 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 34.5 A
STWA78N65M5AG
Min. Typ. Max. Unit
650 V
1 µA
100 µA
±100 nA
4 5 V
0.024 0.032
Ω
3
Notes:
(1)
Defined by design, not subject to production test
Symbol Parameter
Table 6: Dynamic
Test conditions
C iss
C oss
C rss
C
o(tr)
(1)
C
o(er)
(2)
R
G
Q g
Q gs
Q gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent capacitance time related
Equivalent capacitance energy related
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
V
GS
= 0 V, V
DS
= 0 to 520 V f = 1 MHz, I
D
=0 A
V
DD
= 520 V, I
D
= 34.5 A,
V
GS
= 0 to 10 V
(see Figure 16: "Test circuit for gate charge behavior" )
Min. Typ. Max. Unit
-
-
9000
210
-
- pF pF
-
-
-
-
-
-
-
9
768
205
1.5
203
50
84
-
-
-
-
-
-
- pF pf pf
Ω nC nC nC
Notes:
(1)
C o(tr)
is a constant capacitance value that gives the same charging time as C oss
while V
DS
is rising from 0 to
80% V
DSS
.
(2)
C o(er)
is a constant capacitance value that gives the same stored energy as Coss while V
DS
is rising from 0 to
80% V
DSS
.
4/13 DocID030923 Rev 1
STWA78N65M5AG
Symbol t d(V) t r(V) t f(i)
Parameter
Voltage delay time
Voltage rise time
Current fall time t c(off)
Crossing time
Table 7: Switching times
Test conditions
V
DD
= 400 V, I
D
= 40 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 17: "Test circuit for inductive load switching and diode recovery times" and Figure
20: "Switching time waveform" )
Electrical characteristics
Min. Typ. Max. Unit
-
-
-
-
163
14
14
26
-
-
-
- ns ns ns ns
Symbol Parameter
I
SD
Source-drain current
I
SDM
(1)
Source-drain current
(pulsed)
V
SD
(2)
Forward on voltage t rr
Q rr
Reverse recovery time
Reverse recovery charge
I
I
RRM t
Q rr rr
RRM
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Table 8: Source drain diode
Test conditions
I
SD
= 69 A, V
I
SD
= 69 A,
GS
= 0 di/dt = 100 A/µs
V
DD
= 100 V
(see Figure 17: "Test circuit for inductive load switching and diode recovery times" )
I
SD
= 69 A, di/dt = 100 A/µs
V
DD
= 100 V, T j
= 150 °C
(see Figure 17: "Test circuit for inductive load switching and diode recovery times" )
Min. Typ. Max. Unit
- 69 A
- 276 A
-
- 504
1.5 V ns
- 13 µC
-
-
-
-
49
635
19
59
A ns
µC
A
Notes:
(1)
Pulse width limited by safe operating area
(2)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID030923 Rev 1 5/13
