STE60N105DK5
N-channel 1050 V, 0.110 Ω typ., 46 A MDmesh™ DK5
Power MOSFET in an ISOTOP package
Datasheet - production data
Prerelease product(s)
Features
Order code
VDS
RDS(on)
max.
ID
PTOT
STE60N105DK5
1050 V
0.120 Ω
46 A
680 W
Figure 1: Internal schematic diagram
Fast-recovery body diode
Best RDS(on) x area
Low gate charge, input capacitance and
resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Applications
Switching applications
Description
This very high voltage N-channel Power
MOSFET is part of the MDmesh™ DK5 fast
recovery diode series. The MDmesh™ DK5
combines very low recovery charge (Qrr) and
recovery time (trr) with an excellent improvement
in RDS(on) * area and one of the most effective
switching behaviors, ideal for half bridge and full
bridge converters.
Table 1: Device summary
Order code
Marking
Packages
Packaging
STE60N105DK5
60N105DK5
ISOTOP
Tube
December 2016
DocID024137 Rev 2
This is information on a product in full production.
1/13
www.st.com
Contents
STE60N105DK5
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ..................................................................................... 8
4
Package information ....................................................................... 9
4.1
Revision history ............................................................................ 12
Prerelease product(s)
5
ISOTOP package information ......................................................... 10
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STE60N105DK5
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
VGS
ID
IDM
(1)
PTOT
Parameter
Value
Unit
Gate-source voltage
±30
V
Drain current (continuous) at TC = 25 °C
46
A
Drain current (continuous) at TC = 100 °C
30
A
Drain current (pulsed)
184
A
Total dissipation at TC = 25 °C
680
W
dv/dt
(2)
Peak diode recovery voltage slope
50
V/ns
dv/dt
(3)
MOSFET dv/dt ruggedness
50
V/ns
VISO
Insulation withstand voltage (AC-RMS)
2.5
kV
Tj
Operating junction temperature range
-55 to 150
°C
Value
Unit
Tstg
Storage temperature range
Prerelease product(s)
Notes:
(1)Pulse
(2)I
SD
(3)V
width limited by safe operating area
≤ 23 A, di/dt ≤ 400 A/μs; VDS peak ≤ V(BR)DSS, VDD = 525 V
DS
≤ 840 V
Table 3: Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-amb
Thermal resistance junction-ambient
0.184
30
°C/W
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAS
Single pulse avalanche energy (pulse width limited by TJMAX)
16
A
EAS
Single pulse avalanche energy
(starting TJ = 25°C, ID = IAS, VDD = 50 V)
1550
mJ
DocID024137 Rev 2
3/13
Electrical characteristics
2
STE60N105DK5
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5: On /off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown
voltage
ID = 1 mA, VGS = 0 V
Min.
Typ.
Max.
1050
Unit
V
VDS = 1050 V, VGS = 0 V
1
µA
VDS = 1050 V, VGS = 0 V,
TC = 125 °C(1)
50
µA
Gate-body leakage current
VGS = ±20 V, VDS = 0 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100 µA
4
5
V
RDS(on)
Static drain-source onresistance
VGS = 10 V, ID = 23 A
0.110
0.120
Ω
Min.
Typ.
Max.
Unit
-
6675
-
pF
-
370
-
pF
IDSS
Zero gate voltage drain
current
IGSS
3
Notes:
Prerelease product(s)
(1)Defined
by design, not subject to production test
Table 6: Dynamic
Symbol
Ciss
Parameter
Test conditions
Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
Coss
Output capacitance
Crss
Reverse transfer capacitance
-
10
-
pF
Co(tr)(1)
Equivalent capacitance time
related
-
630
-
pF
Co(er)(2)
Equivalent capacitance
energy related
-
219
-
RG
Intrinsic gate resistance
f = 1 MHz open drain
-
3
-
Ω
Qg
Total gate charge
-
204
-
nC
Qgs
Gate-source charge
-
36
-
nC
Qgd
Gate-drain charge
VDD = 840 V, ID = 46 A,
VGS = 10 V
(see Figure 15: "Test circuit
for gate charge behavior")
-
133
-
nC
VGS = 0 V, VDS = 0 to 840 V
Notes:
(1)Time
related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
(2)Energy
related is defined as a constant equivalent capacitance giving the same stored energy as C oss when VDS
increases from 0 to 80% VDSS.
4/13
DocID024137 Rev 2
STE60N105DK5
Electrical characteristics
Table 7: Switching times
Symbol
td(on)
tr
td(off)
tf
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Min.
Typ.
Max.
Unit
VDD = 525 V, ID = 23 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14: "Test circuit for
resistive load switching times"
and Figure 19: "Switching time
waveform")
-
40.6
-
ns
-
64.5
-
ns
-
262
-
ns
-
49.5
-
ns
Min.
Typ.
Max.
Unit
Table 8: Source drain diode
Prerelease product(s)
Symbol
Parameter
Test conditions
ISD
Source-drain current
-
46
A
ISDM
Source-drain current
(pulsed)
-
184
A
VSD(1)
Forward on voltage
ISD = 46 A, VGS = 0 V
-
1.5
V
trr
Reverse recovery time
-
273
ns
Qrr
Reverse recovery charge
-
3
µC
IRRM
Reverse recovery current
ISD = 46 A, VDD = 60 V,
di/dt = 100 A/µs
(see Figure 16: "Test circuit for
inductive load switching and
diode recovery times")
-
23
A
ISD = 46 A, VDD = 60 V,
di/dt = 100 A/µs, Tj = 150 °C
(see Figure 16: "Test circuit for
inductive load switching and
diode recovery times")
-
477
ns
-
10
µC
-
42
A
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
Notes:
(1)Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
DocID024137 Rev 2
5/13
Electrical characteristics
2.1
STE60N105DK5
Electrical characteristics (curves)
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
Prerelease product(s)
Figure 2: Forward bias safe operating area
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DocID024137 Rev 2
Prerelease product(s)
STE60N105DK5
Electrical characteristics
Figure 8: Capacitance variations
Figure 9: Normalized gate threshold voltage vs
temperature
Figure 10: Normalized on-resistance vs temperature
Figure 11: Normalized V(BR)DSS vs temperature
Figure 12: Source-drain diode forward
characteristics
Figure 13: Maximum avalanche energy vs
starting TJ
DocID024137 Rev 2
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Test circuits
Prerelease product(s)
3
8/13
STE60N105DK5
Test circuits
Figure 14: Test circuit for resistive load
switching times
Figure 15: Test circuit for gate charge
behavior
Figure 16: Test circuit for inductive load
switching and diode recovery times
Figure 17: Unclamped inductive load test
circuit
Figure 18: Unclamped inductive waveform
Figure 19: Switching time waveform
DocID024137 Rev 2
STE60N105DK5
4
Package information
Package information
Prerelease product(s)
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
DocID024137 Rev 2
9/13
Package information
4.1
STE60N105DK5
ISOTOP package information
Prerelease product(s)
Figure 20: ISOTOP outline
10/13
DocID024137 Rev 2
STE60N105DK5
Package information
Table 9: ISOTOP mechanical data
mm
Dim.
Min.
Max.
A
11.80
12.20
A1
8.90
9.10
B
7.80
8.20
C
0.75
0.85
C2
1.95
2.05
D
37.80
38.20
D1
31.50
31.70
E
25.15
25.50
E1
23.85
24.15
E2
Prerelease product(s)
Typ.
24.80
G
14.90
15.10
G1
12.60
12.80
G2
3.50
4.30
F
4.10
4.30
F1
4.60
5
ØP
4
4.30
P1
4
4.40
S
30.10
30.30
DocID024137 Rev 2
11/13
Revision history
5
STE60N105DK5
Revision history
Table 10: Document revision history
Date
Revision
24-Jan-2013
1
First release
2
Datasheet status promoted from preliminary to production data.
Updated title, features, description and internal schematic diagram on
cover page.
Updated Section 1: "Electrical ratings".
Updated Section 2: "Electrical characteristics".
Added Section 2.1: "Electrical characteristics (curves)".
Minor text changes
Prerelease product(s)
16-Dec-2016
Changes
12/13
DocID024137 Rev 2
STE60N105DK5
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