STS9P2UH7
Pchannel 20 V, 0.0195 Ω typ., 9 A STripFET™ H7
Power MOSFET in a SO-8 package
Datasheet - production data
8
5
4
1
SO-8
Figure 1: Internal schematic diagram
Features
Order code V
DS
R
DS(on)
max
STS9P2UH7 20 V
0.0225 Ω @ 4.5 V
Very low on-resistance
Very low capacitance and gate charge
High avalanche ruggedness
Ultra logic level
I
D
9 A
Applications
Switching applications
Description
This device exhibits low on-state resistance and capacitance for improved conduction and switching performance.
Order code
STS9P2UH7
Table 1: Device summary
Marking
9L2U
Package
SO-8
Packaging
Tape and reel
For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed.
January 2015 DocID025143 Rev 3
This is information on a product in full production.
1/15 www.st.com
Contents
Contents
STS9P2UH7
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package mechanical data ............................................................... 9
4.1
SO-8 package mechanical data ........................................................ 9
5 Packaging mechanical data .......................................................... 12
5.1
SO-8 tape and reel mechanical data ............................................... 12
6 Revision history ............................................................................ 14
2/15 DocID025143 Rev 3
STS9P2UH7
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Parameter Symbol
V
DS
V
GS
I
D
I
D
I
DM
(1)
P
TOT
T stg
T j
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T pcb
= 25 °C
Drain current (continuous) at T pcb
= 100 °C
Drain current (pulsed)
Total dissipation at T pcb
= 25 °C
Storage temperature
Max. operating junction temperature
Notes:
(1)
Pulse width limited by safe operating area
Table 3: Thermal data
Parameter Symbol
R thj-pcb
(1)
Thermal resistance junction-pcb max
Value
20
± 8
9
5.8
36
2.7
- 55 to 150
150
Value
47
Notes:
(1)
When mounted on 1inch² FR-4 board, 2 oz Cu
For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed.
Unit
V
V
A
A
A
W
°C
°C
Unit
°C/W
DocID025143 Rev 3 3/15
Electrical characteristics
2
STS9P2UH7
Symbol
C iss
C oss
C rss
Q g
Q gs
Q gd
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Symbol Parameter
Table 4: On /off states
Test conditions
V
(BR)DSS
I
I
DSS
GSS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
V
GS(th) Gate threshold voltage
V
GS
= 0, I
D
= 250 µA
V
GS
= 0, V
DS
= 20 V
V
DS
= 0, V
GS
= ± 5 V
V
DS
= V
GS
, I
D
= 250 µA
R
DS(on)
Static drain-source on- resistance
V
GS
= 4.5 V, I
D
= 4.5 A
V
GS
= 2.5 V, I
D
= 4.5 A
V
GS
= 1.8 V, I
D
= 4.5 A
V
GS
= 1.5 V, I
D
= 4.5 A
Parameter
Table 5: Dynamic
Test conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
V
GS
= 0, V
DS
= 16 V, f = 1 MHz
V
DD
= 16 V, I
D
= 9 A,
V
GS
= 4.5 V
Min. Typ.
20
0.4
Max. Unit
1
V
µA
± 5 µA
1 V
0.0195
0.0225
Ω
0.02
0.036
0.05
0.025
0.043
0.085
Ω
Ω
Ω
-
-
-
Min. Typ. Max. Unit
2390 pF
-
-
220
188 -
pF pF
22
4.2
3.6
-
-
nC nC nC
Parameter
Table 6: Switching times
Test conditions Symbol t d(on) t r t d(off) t f
Turn-on delay time
Rise time
Turn-off delay time
Min. Typ. Max Unit
12.5
ns
-
-
-
30.5
128
84.5
-
-
ns ns ns
Fall time
V
DD
= 16 V, I
D
= 9 A,
R
G
= 1 Ω, V
GS
= 4.5 V
4/15 DocID025143 Rev 3
STS9P2UH7 Electrical characteristics
Symbol
I
V
SD
(1)
t rr
Q rr
RRM
Parameter
Forward on voltage
Table 7: Source drain diode
Test conditions
Reverse recovery time
Reverse recovery charge
Reverse recovery current
V
GS
= 0, I
SD
= 1 A
V
DD
= 16 V di/dt = 100 A/µs, I
SD
= 1 A
Min. Typ. Max. Unit
-
-
-
15.8
5.9
0.7
1
Notes:
(1)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed.
V ns nC
A
DocID025143 Rev 3 5/15
Electrical characteristics
2.1 Electrical characteristics (curves)
I D
(A)
Figure 2: Safe operating area
GIPG210520141011SA
10
Oper
Li at ion m ite d in thi s ar ea by m ax
R is
D
S(o n)
100µs
1ms
10ms
1
STS9P2UH7
Figure 3: Thermal impedance
δ
0.2
0.1
0.05
0.02
0.01
pcb
0.1
0.01
0.1
1
Tj=150°C
Tpcb=25°C
Single pulse
10 V DS (V)
Figure 4: Output characteristics
GIPG210520141044SA
I D (A)
V GS =2.5, 3, 3.5, 4, 4.5, 5V
20
2V
15
Figure 5: Transfer characteristics
GIPG210520141055SA
I D
(A)
V DS =2V
12.00
8.00
10
5
1.5V
4.00
0
0 2 4 6 8 V DS (V)
Figure 6: Gate charge vs gate-source voltage
GIPG210520141043SA
V GS
(V)
V DD =16V
I D =9A
4
0.00
0 0.5
1 1.5
2 V GS (V)
Figure 7: Static drain-source on-resistance
GIPG210520141102SA
R DS(on)
(m Ω)
V GS =4.5V
20.5
3
20.0
19.5
2
19.0
1
0
0 5 10 15 20 Q g (nC)
18.5
18.0
0 1 2 3 4 5 6 I D (A)
6/15 DocID025143 Rev 3
STS9P2UH7
Figure 8: Capacitance variations
GIPG210520141108SA
C
(pF)
1000
100
0 4 8 12
Ciss
Coss
Crss
16 V DS (V)
Electrical characteristics
Figure 9: Normalized gate threshold voltage vs temperature
GIPG210520141114SA
V GS(th)
(norm)
I D =250µ A
1.4
1.2
1
0.8
0.6
0.4
0.2
-75 -25 25 75 125 T J (°C)
Figure 10: Normalized on-resistance vs temperature
GIPG210520141119SA
R DS(on)
(norm)
I D =4.5 A
1.6
V GS =4.5V
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-75 -25 25 75 125 T J (°C)
Figure 11: Normalized V(BR)DSS vs temperature
GIPG210520141132SA
V (BR)DSS
(norm)
I D =1m A
1.04
1
0.96
0.92
-75 -25 25 75 125 T J (°C)
Figure 12: Source-drain diode forward characteristics
GIPG210520141134SA
V
SD
(V)
T J =-55°C
0.9
T
J
=25°C
0.8
0.7
T
J
=75°C
0.6
0.5
1 2 3 4 5 6 7 8 I
SD
(A)
DocID025143 Rev 3 7/15
Test circuits
3 Test circuits
Figure 13: Switching times test circuit for resistive load
STS9P2UH7
Figure 14: Gate charge test circuit
Figure 15: Test circuit for inductive load switching and diode recovery times
8/15 DocID025143 Rev 3
STS9P2UH7
4
4.1
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
SO-8 package mechanical data
Figure 16: SO-8 drawing
DocID025143 Rev 3 9/15
Package mechanical data
Dim. h
L
L1
D
E
E1 e b1 c c1
A
A1
A2 b
L2 k ccc
Min.
Table 8: SO-8 mechanical data mm
Typ.
0.10
1.25
0.31
0.28
0.10
0.10
4.80
5.80
3.80
4.90
6.00
3.90
1.27
0.25
0.40
1.04
0.25
0°
STS9P2UH7
Max.
1.75
0.25
0.51
0.48
0.25
0.23
5.00
6.20
4.00
0.50
1.27
8°
0.10
10/15 DocID025143 Rev 3
STS9P2UH7 Package mechanical data
Figure 17: SO-8 recommended footprint
DocID025143 Rev 3 11/15
Packaging mechanical data
5
5.1
Packaging mechanical data
STS9P2UH7
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
SO-8 tape and reel mechanical data
Figure 18: SO-8 tape and reel dimensions
12/15 DocID025143 Rev 3
STS9P2UH7
Dim.
T
Ao
Bo
A
C
D
N
Ko
Po
P
Packaging mechanical data
Table 9: SO-8 tape and reel mechanical data mm
Min.
12.8
20.2
60
8.1
5.5
2.1
3.9
7.9
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
330
13.2
22.4
8.5
5.9
2.3
4.1
8.1
DocID025143 Rev 3 13/15
Revision history
6
STS9P2UH7
Revision history
Date
27-Aug-2013
04-Jun-2014
12-Jan-2015
Revision
1
2
3
Table 10: Document revision history
Changes
First release.
Document status promoted from preliminary data to production data
Modified: title
Modified: R
DS(on)
max value in cover page
Modified: R
DS(on)
(typical and maximum) values in Table 4: "On /off states"
Modified: the entire typical values in Table 5: "Dynamic" , Table 6:
"Switching times" and Table 7: "Source drain diode"
Added: Section 8.1: "Electrical characteristics (curves)"
Minor text changes
Updated title, features and description in cover page.
Updated Figure 3: "Thermal impedance".
14/15 DocID025143 Rev 3
STS9P2UH7
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– All rights reserved
DocID025143 Rev 3 15/15
