6.5 Memory. Infineon CY8C4045LQI-S412, CY8C4045LQI-S413, CY8C4025AZI-S413T, CY8C4024LQI-S412, CY8C4025AZQ-S403, CY8C4024LQI-S403T, CY8C4025LQI-S412, CY8C4025LQI-S402T, CY8C4045LQI-S411, CY8C4024AXI-S412

PSoC™ 4 MCU: PSoC™ 4000S

Based on Arm® Cortex®-M0+ CPU

Electrical specifications

6.5

6.5.1

Memory

Flash

Table 23

Spec ID Parameter

SID173 V

PE

Flash DC specifications

Description

Erase and program voltage

Min

1.71

Typ

–

Max Units Details/conditions

5.5

V –

Table 24

Spec ID

SID174

SID175

SID176

SID178

SID180

[10]

SID181

[10]

SID182

[10]

SID182A

[10]

T

T

T

T

T

F

F

Flash AC specifications

Parameter

ROWWRITE

[9]

ROWERASE

[9]

ROWPROGRAM

[9]

BULKERASE

[9]

DEVPROG

[9]

END

RET

Description

Row (block) write time (erase and program)

Row erase time

Row program time after erase

Bulk erase time

(32 KB)

Total device program time

Flash endurance

Flash retention.

T  55°C,

–

Flash retention.

T  85°C,

SID182B

SID256

SID257

[10]

F

RETQ

TWS48

TWS24

Flash retention.

T ≤ 105°C,

10 K P/E cycles,

≤ three years at T

A

≥ 85 °C.

Number of Wait states at 48 MHz

Number of Wait states at 24 MHz

–

–

100 K

20

10

10

2

1

Min Typ Max

–

–

–

–

–

–

20

16

4

–

–

–

–

–

–

–

–

–

20

–

–

35

7

–

–

Units Details/conditions ms

Row (block) =

128 bytes

–

–

–

Seconds –

Cycles –

–

Years

–

Guaranteed by

Characterization

CPU execution from Flash

CPU execution from Flash

Notes

9. It can take as much as 20 milliseconds to write to flash. During this time the device should not be Reset, or Flash operations may be interrupted and cannot be relied on to have completed. Reset sources include the XRES pin, software resets, CPU lockup states and privilege violations, improper power supply levels, and watchdogs. Make certain that these are not inadvertently activated.

10.Guaranteed by characterization.

Datasheet 36 002-00123 Rev. *O

2022-07-28